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11. 发明授权

US5727013A Single lobe surface emitting complex coupled distributed feedback semiconductor laser 失效
标题翻译：单波瓣表面发射复耦合分布反馈半导体激光器
公开(公告)号：US5727013A
公开(公告)日：1998-03-10
申请号：US549404
申请日：1995-10-27
申请人： Dan Botez , Masoud J. Kasraian
发明人： Dan Botez , Masoud J. Kasraian
IPC分类号： H01S5/12 , H01S5/187 , H01S5/40 , H01S5/42 , H01S3/08 , H01S3/19
CPC分类号： H01S5/1228 , H01S5/187 , H01S5/42 , H01S5/4068
摘要： A high power monolithic surface emitting semiconductor laser provides a single lobe far-field radiation profile which is emitted normal to the plane of a surface of the semiconductor laser structure. The semiconductor laser includes an active region layer at which light is emitted and a complex-coupled distributed feedback grating positioned to act upon light from the active region. The adjacent elements of the distributed feedback grating differ from one another in both refractive index and gain/loss. The grating period, or the combined width of the two adjacent grating elements, is selected to be equal to a full wavelength in the semiconductor structure of the light emitted from the active region. Lasing occurs in a symmetric mode, resulting in emission of light from a planar surface of the semiconductor structure perpendicular to the surface, the grating layer and the active region layer as long as the modal-gain difference between symmetric and antisymmetric modes due to optical-field overlap with the gain/loss grating overcomes the modal-gain difference based on radiation losses.
摘要翻译：高功率单片面发射半导体激光器提供垂直于半导体激光器结构的表面的平面发射的单波瓣远场辐射轮廓。半导体激光器包括发射光的有源区域层和被定位成对来自有源区域的光作用的复耦合分布式反馈光栅。分布式反馈光栅的相邻元件在折射率和增益/损耗方面彼此不同。光栅周期或两个相邻光栅元件的组合宽度被选择为等于从有源区发射的光的半导体结构中的全波长。激光发生在对称模式，导致从垂直于表面，光栅层和有源区域层的半导体结构的平面表面发射的光，只要由于光学元件的对称和反对称模式之间的模态增益差异，与增益/损耗光栅的场重叠克服了基于辐射损耗的模态增益差异。

12. 发明授权

US5063570A Semiconductor laser arrays using leaky wave interarray coupling 失效
标题翻译：半导体激光阵列使用漏波阵列耦合
公开(公告)号：US5063570A
公开(公告)日：1991-11-05
申请号：US604315
申请日：1990-10-29
申请人： Dan Botez , Luke J. Mawst , Gary L. Peterson
发明人： Dan Botez , Luke J. Mawst , Gary L. Peterson
IPC分类号： H01S5/40
CPC分类号： H01S5/4031
摘要： A semiconductor laser array of antiguides having a large number of antiguide elements to provide relatively high optical power output with a high degree of coherence and array mode discrimination. The antiguide elements are grouped into array cells that are separated by interarray regions having a width and refractive index selected to produce a resonance condition in the 0.degree.-phase-shift array mode. Each array cell is also designed to operate in the resonant condition, and losses in the interarray regions discriminate against modes other than the 0.degree.-phase-shift mode. The entire group of cells operates as a high-power, coherent ensemble, without the degradation of mode discrimination and beam quality usually associated with large numbers of waveguide elements.
摘要翻译：一种具有大量抗划线元件的防划离元件的半导体激光器阵列，以提供相对较高的光功率输出，具有高度的相干性和阵列模式鉴别。反射元件被分组成阵列单元，该阵列单元被选择为具有0° - 移相阵列模式的谐振条件的宽度和折射率的区域间隔开。每个阵列单元还被设计为在谐振条件下工作，并且在阵列区域中的损耗区别于0° - 相移模式以外的模式。整个单元组作为大功率相干集合而工作，而不会降低通常与大量波导元件相关的模式识别和光束质量。

13. 发明授权

US4852113A Laser array with wide-waveguide coupling region 失效
标题翻译：激光阵列与宽波导耦合区域
公开(公告)号：US4852113A
公开(公告)日：1989-07-25
申请号：US921648
申请日：1986-10-21
申请人： Dan Botez
发明人： Dan Botez
IPC分类号： H01S5/40
CPC分类号： H01S5/4068
摘要： A semiconductor laser array that discriminates in favor of a fundamental array mode of oscillation and provides a far-field radiation pattern that is single lobed and diffraction-limited. The array includes a first set of parallel waveguides, a wide-waveguide section and a second set of parallel waveguides. Oscillation in the fundamental or 0.degree.-phase-shift array mode is easily coupled from the first set of waveguides to the wide-waveguide section, and from the wide-waveguide section to the second set of waveguides. When adjacent waveguides oscillate out of phase, as in the 180.degree.-phase-shift array mode, easy coupling is not obtained because the waveguides of the second set are not colinear with those of the first set. The structure of the invention also avoids the large radiation losses inherent in Y-junction arrays.
摘要翻译：一种半导体激光器阵列，其有利于基本阵列振荡模式，并提供单凸起和衍射限制的远场辐射图。阵列包括第一组平行波导，宽波导部分和第二组平行波导。在基波或0°移相阵列模式中的振荡容易地从第一组波导耦合到宽波导部分，并且从宽波导部分耦合到第二组波导。当相邻的波导与180度相移阵列模式相异振荡时，由于第二组的波导与第一组波导不共线，所以不能获得容易的耦合。本发明的结构也避免了Y形结阵列固有的大的辐射损耗。

14. 发明授权

US4416012A W-Guide buried heterostructure laser 失效
标题翻译： W导轨埋异质结构激光
公开(公告)号：US4416012A
公开(公告)日：1983-11-15
申请号：US323058
申请日：1981-11-19
申请人： Dan Botez , Michael Ettenberg
发明人： Dan Botez , Michael Ettenberg
IPC分类号： H01S5/20 , H01S5/227 , H01S3/19
CPC分类号： H01S5/227 , H01S5/205 , H01S5/2275
摘要： The invention is an improved buried heterostructure laser wherein the improvement comprises a cladding layer which is interposed between the mesa and the burying region and has a refractive index less than that of the burying region and the effective refractive index of the fundamental transverse mode. The discrimination against higher order modes of propagation provided by the structure permits the use of a wider active layer and thus a larger emitting area.
摘要翻译：本发明是一种改进的掩埋异质结构激光器，其中改进包括介于台面和掩埋区之间的包层，其折射率小于埋藏区的折射率和基本横模的有效折射率。由结构提供的对高阶传播模式的区分允许使用更宽的有源层，因此使用较大的发射区域。

15. 发明申请

US20140247850A1 MULTIQUANTUM WELL STRUCTURES FOR SUPPRESSION OF ELECTRON LEAKAGE AND REDUCTION OF THRESHOLD-CURRENT DENSITY IN QUANTUM CASCADE LASERS 有权
标题翻译：用于抑制电子泄漏和减少量子级激光器中阈值电流密度的多晶体结构
公开(公告)号：US20140247850A1
公开(公告)日：2014-09-04
申请号：US13591645
申请日：2012-08-22
申请人： Dan Botez , Jae Cheol Shin
发明人： Dan Botez , Jae Cheol Shin
IPC分类号： H01S5/34
CPC分类号： H01S5/2009 , B82Y20/00 , H01S5/00 , H01S5/20 , H01S5/2013 , H01S5/3216 , H01S5/34 , H01S5/3402 , H01S5/3407 , H01S5/3412 , H01S5/3413 , H01S5/3418 , H01S5/3425
摘要： Semiconductor structures for laser devices are provided. The semiconductor structures have a quantum cascade laser structure comprising an electron injector, an active region, and an electron extractor. The active region comprises an injection barrier, a multiquantum well structure, and an exit barrier. The multiquantum well structure can comprise a first barrier, a first quantum well, a second barrier, a second quantum well, and a third barrier. The energies of the first and second barrier are less than the energy of the third barrier. The energy difference between the energy of the second barrier and the energy of the third barrier can be greater than 150 meV and the ratio of the energy of the third barrier to the energy of the second barrier can be greater than 1.26.
摘要翻译：提供了激光器件的半导体结构。半导体结构具有包括电子注入器，有源区和电子提取器的量子级联激光器结构。活性区域包括注入阻挡层，多量子阱结构和出口屏障。多量子阱结构可以包括第一势垒，第一量子阱，第二势垒，第二量子阱和第三势垒。第一和第二屏障的能量小于第三屏障的能量。第二阻挡层的能量与第三阻挡层的能量之间的能量差可以大于150meV，并且第三阻挡层的能量与第二阻挡层的能量的比率可以大于1.26。

16. 发明申请

US20120230358A1 HIGH-POWER QUANTUM CASCADE LASERS WITH ACTIVE-PHOTONIC-CRYSTAL STRUCTURE FOR SINGLE, IN-PHASE MODE OPERATION 有权
标题翻译：具有主动 - 光子晶体结构的大功率量子级激光器，用于单相，相模式操作
公开(公告)号：US20120230358A1
公开(公告)日：2012-09-13
申请号：US13046269
申请日：2011-03-11
申请人： Dan Botez , Jeremy Daniel Kirch
发明人： Dan Botez , Jeremy Daniel Kirch
IPC分类号： H01S5/30 , H01S5/34
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/105 , H01S5/12 , H01S5/2218 , H01S5/223 , H01S5/4031 , H01S2301/166
摘要： Semiconductor laser array devices capable of emitting mid- to long-wavelength infrared (i.e., 4-12 μm) radiation are provided. The devices include a quantum cascade laser (QCL) structure comprising one or more active cores; an optical confinement structure; a cladding structure, and a plurality of laterally-spaced trench regions extending transversely through the cladding and optical confinement structures, and partially into the QCL structure. The trench regions define a plurality of laterally-spaced interelement regions separated by element regions in the laser array device. The element regions are characterized by a non-uniform structure across their widths. As a result of this structural non-uniformity, array modes composed of coupled first-order lateral modes of the element regions are preferentially suppressed relative to array modes composed of coupled fundamental lateral modes of the element regions.
摘要翻译：提供能够发射中长波长红外（即4-12μm）辐射的半导体激光阵列器件。这些装置包括包含一个或多个活性核心的量子级联激光器（QCL）结构; 光学限制结构; 包层结构，以及横向延伸穿过包层和光限制结构的多个横向间隔开的沟槽区域，并且部分地延伸到QCL结构中。沟槽区域限定由激光器阵列器件中的元件区域分开的多个横向间隔的元件区域。元件区域的特征在于横跨其宽度的不均匀的结构。作为这种结构不均匀的结果，相对于由元件区域的耦合的基本横向模式组成的阵列模式，优选地抑制由元件区域的耦合的一阶横向模式组成的阵列模式。

17. 发明申请

US20120039350A1 HIGH POWER, HIGH EFFICIENCY QUANTUM CASCADE LASERS WITH REDUCED ELECTRON LEAKAGE 有权
标题翻译：高功率，高效率量子激光器，减少电子泄漏
公开(公告)号：US20120039350A1
公开(公告)日：2012-02-16
申请号：US12855476
申请日：2010-08-12
申请人： Dan Botez , Jae Cheol Shin
发明人： Dan Botez , Jae Cheol Shin
IPC分类号： H01S5/34 , H01L29/06
CPC分类号： H01L29/122 , B82Y10/00 , B82Y20/00 , H01L33/06 , H01S5/3402 , H01S5/3407
摘要： Semiconductor structures and laser devices including the semiconductor structures are provided. The semiconductor structures have a quantum cascade laser (QCL) structure including an electron injector, an active region, and an electron extractor. The active region of the semiconductor structures includes a configuration of quantum wells and barriers that virtually suppresses electron leakage, thereby providing laser devices including such structures with superior electro-optical characteristics.
摘要翻译：提供包括半导体结构的半导体结构和激光器件。半导体结构具有包括电子注入器，有源区和电子提取器的量子级联激光器（QCL）结构。半导体结构的有源区域包括实质上抑制电子泄漏的量子阱和屏障的构造，从而提供包括具有优异电光特性的这种结构的激光器件。

18. 发明授权

US07457340B2 High coherent power, two-dimensional surface-emitting semiconductor diode array laser 有权
标题翻译：高相干功率，二维表面发射半导体二极管阵列激光器
公开(公告)号：US07457340B2
公开(公告)日：2008-11-25
申请号：US11112749
申请日：2005-04-22
申请人： Dan Botez
发明人： Dan Botez
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/0014 , H01S5/028 , H01S5/1032 , H01S5/1203 , H01S5/124 , H01S5/125 , H01S5/187 , H01S5/205 , H01S5/34313 , H01S5/4081 , H01S5/42
摘要： A semiconductor laser is formed on a semiconductor substrate with an array of laterally spaced laser device elements each including a second order distributed feedback grating bounded by distributed Bragg reflector gratings. The device elements in which the distributed feedback grating and the distributed Bragg reflector gratings are formed have a lower effective index than the index of the interelement regions and are spaced so as to form an antiguided array.
摘要翻译：半导体激光器形成在具有横向间隔开的激光器件元件的阵列的半导体衬底上，每个激光器件元件包括由分布式布拉格反射器光栅限定的二阶分布反馈光栅。其中形成分布式反馈光栅和分布式布拉格反射器光栅的器件元件的有效指数低于元件区域的指标，并且间隔开以形成防护阵列。

19. 发明授权

US07408966B2 Intersubband quantum box stack lasers 有权
标题翻译： Intersubband量子盒堆叠激光器
公开(公告)号：US07408966B2
公开(公告)日：2008-08-05
申请号：US11507039
申请日：2006-08-18
申请人： Dan Botez
发明人： Dan Botez
IPC分类号： H01S5/00
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/105 , H01S5/2004 , H01S5/3412
摘要： The present invention provides semiconductor lasers having an Active-Photonic-Crystal (APC) structure that allows scaling of the coherent power by using a waveguide having a periodic structure that selects operation in a single spatial mode from large-aperture devices. The lasers include an active medium that includes an array of quantum box ministacks, each ministack containing 2 to 5 vertically stacked, coupled quantum boxes.
摘要翻译：本发明提供具有活性光子晶体（APC）结构的半导体激光器，其允许通过使用具有从大孔径器件选择在单个空间模式中操作的周期性结构的波导来缩放相干光焦度。激光器包括一个活性介质，其中包括一个量子盒子组件的阵列，每个组件包含2到5个垂直堆叠的耦合的量子盒。

20. 发明授权

US06885686B2 High coherent power, two-dimensional surface-emitting semiconductor diode array laser 有权
标题翻译：高相干功率，二维表面发射半导体二极管阵列激光器
公开(公告)号：US06885686B2
公开(公告)日：2005-04-26
申请号：US10345613
申请日：2003-01-16
申请人： Dan Botez
发明人： Dan Botez
IPC分类号： H01S3/00 , H01S3/08 , H01S5/00 , H01S5/02 , H01S5/12 , H01S5/125 , H01S5/18 , H01S5/187 , H01S5/343 , H01S5/40 , H01S5/42
CPC分类号： H01S5/42 , B82Y20/00 , H01S5/026 , H01S5/028 , H01S5/1032 , H01S5/1203 , H01S5/124 , H01S5/125 , H01S5/187 , H01S5/205 , H01S5/34313 , H01S5/4081
摘要： A semiconductor laser is formed on a semiconductor substrate with an array of laterally spaced laser device elements each including a second order distributed feedback grating bounded by distributed Bragg reflector gratings and a central phase shift in the distributed feedback grating. The device elements in which the distributed feedback grating and the distributed Bragg reflector gratings are formed have a lower effective index than the index of the interelement regions and are spaced so as to form an antiguided array. A two-dimensional semiconductor array laser may be formed of four or more of the semiconductor array devices arranged on the substrate to provide long range coherent coupling via traveling waves of light between the device elements.
摘要翻译：半导体激光器形成在具有横向间隔开的激光器件元件的阵列的半导体衬底上，每个激光器元件包括由分布式布拉格反射器光栅限定的二阶分布反馈光栅和分布式反馈光栅中的中心相移。其中形成分布式反馈光栅和分布式布拉格反射器光栅的器件元件的有效指数低于元件区域的指标，并且间隔开以形成防护阵列。二维半导体阵列激光器可以由设置在基板上的四个或更多个半导体阵列器件形成，以通过器件元件之间的光的行波提供长距离的相干耦合。

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