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11. 发明授权

US09000444B2 Thin film transistor array substrate, organic light-emitting display device including the same, and method of manufacturing the organic light-emitting display device 有权
标题翻译：薄膜晶体管阵列基板，包括该薄膜晶体管阵列基板的有机发光显示装置以及制造该有机发光显示装置的方法
公开(公告)号：US09000444B2
公开(公告)日：2015-04-07
申请号：US13323108
申请日：2011-12-12
申请人： June-Woo Lee , Jae-Beom Choi , Kwan-Wook Jung , Jae-Hwan Oh , Seong-Hyun Jin , Kwang-Hae Kim , Jong-Hyun Choi
发明人： June-Woo Lee , Jae-Beom Choi , Kwan-Wook Jung , Jae-Hwan Oh , Seong-Hyun Jin , Kwang-Hae Kim , Jong-Hyun Choi
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036 , H01L27/32 , H01L51/52 , H01L27/12
CPC分类号： H01L27/1237 , H01L27/1255 , H01L27/127 , H01L27/1288 , H01L27/3265 , H01L27/3276 , H01L29/66742 , H01L51/5215 , H01L51/5265 , H01L2227/323
摘要： A thin film transistor (TFT) array substrate is provided that includes a TFT on a substrate. The TFT can include an active layer, gate electrode, source electrode, drain electrode, first insulating layer between the active layer and the gate electrode, and second insulating layer between the gate electrode and the source and drain electrodes. A pixel electrode is disposed on the first and second insulating layers. A capacitor including a lower electrode is disposed on a same layer as the gate electrode and an upper electrode. A third insulating layer directly between the second insulating layer and the pixel electrode and between the lower electrode and the upper electrode. A fourth insulating layer covers the source electrode, the drain electrode, and the upper electrode, and exposes the pixel electrode and can further expose a pad electrode.
摘要翻译：提供了一种在基板上包括TFT的薄膜晶体管（TFT）阵列基板。 TFT可以包括有源层，栅电极，源电极，漏电极，有源层和栅电极之间的第一绝缘层，以及栅电极和源电极和漏电极之间的第二绝缘层。像素电极设置在第一和第二绝缘层上。包括下电极的电容器设置在与栅电极和上电极相同的层上。直接在第二绝缘层和像素电极之间以及下电极和上电极之间的第三绝缘层。第四绝缘层覆盖源电极，漏电极和上电极，并且使像素电极露出，并且可以进一步暴露焊盘电极。

12. 发明申请

US20130187167A1 THIN FILM TRANSISTOR ARRAY PANEL AND ORGANIC LIGHT EMITTING DIODE DISPLAY INCLUDING THE SAME, METHOD FOR CUTTING WIRE IN THIN FILM TRANSISTOR ARRAY PANEL 有权
标题翻译：薄膜晶体管阵列面板和有机发光二极管显示器，包括它们，薄膜晶体管阵列线切割方法
公开(公告)号：US20130187167A1
公开(公告)日：2013-07-25
申请号：US13534111
申请日：2012-06-27
申请人： Guang-Hai JIN , Jae-Beom Choi , Kwan-Wook Jung , June-Woo Lee , Moo-Jin Kim , Se-Hun Park
发明人： Guang-Hai JIN , Jae-Beom Choi , Kwan-Wook Jung , June-Woo Lee , Moo-Jin Kim , Se-Hun Park
IPC分类号： H01L27/32 , H01L51/56
CPC分类号： H01L27/124 , G02F1/1309 , G02F1/136259 , H01L27/1244 , H01L27/1259 , H01L27/3276 , H01L2251/568
摘要： A thin film transistor display panel includes a plurality of pixels arranged in a matrix format, the plurality of pixels include thin film transistors, respectively, a plurality of first signal lines connected with the pixels, a plurality of second signal lines connected with the pixels, the plurality of second signal lines cross the first signal lines in an insulated manner, at least one of the second signal lines includes a cut portion, and an organic repairing member overlaps the cut portion
摘要翻译：薄膜晶体管显示面板包括以矩阵格式布置的多个像素，多个像素分别包括薄膜晶体管，与像素连接的多个第一信号线，与像素连接的多个第二信号线，所述多个第二信号线以绝缘方式与所述第一信号线交叉，所述第二信号线中的至少一个包括切割部分，并且有机修复部件与所述切割部分重叠

13. 发明授权

US08319929B2 Liquid crystal display including a variable width spacer element and method for fabricating the same 有权
标题翻译：包括可变宽度间隔元件的液晶显示器及其制造方法
公开(公告)号：US08319929B2
公开(公告)日：2012-11-27
申请号：US13196791
申请日：2011-08-02
申请人： Joong-Hyun Mun , Jang-Kun Song , Yong-Woo Choi , Bo-Sung Kim , Kwan-Wook Jung , Jung-Ho Lee , Hyo-Rak Nam
发明人： Joong-Hyun Mun , Jang-Kun Song , Yong-Woo Choi , Bo-Sung Kim , Kwan-Wook Jung , Jung-Ho Lee , Hyo-Rak Nam
IPC分类号： G02F1/1339 , G02F1/1343
CPC分类号： G02F1/136286 , G02F1/133345 , G02F1/133707 , G02F1/13394 , G02F1/134336 , G02F1/136213 , G02F1/136227 , G02F1/1368 , G02F2001/13398 , G02F2001/134372 , G02F2001/136231 , G02F2201/123 , H01L27/124 , H01L29/78669
摘要： A liquid crystal display with two insulating substrates. A first insulating substrate has crossing signal lines, a pixel electrode, and a drain electrode electrically connected to the pixel electrode through a contact hole. A spacer is formed on the first signal line of the first insulating substrate, and is wider at a first portion close to the first insulating substrate than at a second portion close to the second insulating substrate, and the drain electrode comprises a first portion and a second portion extending in a different direction with respect to the first portion.
摘要翻译：具有两个绝缘基板的液晶显示器。第一绝缘基板具有通过接触孔与像素电极电连接的交叉信号线，像素电极和漏电极。间隔物形成在第一绝缘基板的第一信号线上，并且在接近第一绝缘基板的第一部分处比靠近第二绝缘基板的第二部分宽，并且漏电极包括第一部分和第二部分相对于第一部分沿不同的方向延伸。

14. 发明申请

US20120138808A1 X-ray detector and method of driving the same 有权
标题翻译： X射线探测器及其驱动方法
公开(公告)号：US20120138808A1
公开(公告)日：2012-06-07
申请号：US13200319
申请日：2011-09-23
申请人： Kwan-Wook Jung
发明人： Kwan-Wook Jung
IPC分类号： G01T1/24
CPC分类号： G01T1/171 , G01T1/24 , G01T1/247 , H04N5/32 , H04N5/3597 , H04N5/361 , H04N5/378
摘要： An X-ray detector and a method of driving the X-ray detector, which accurately compensate for an image lag of an X-ray scanning by using an X-ray image and a dark image, are provided. A stand-by time for the X-ray scanning may be reduced by increasing the accuracy of the image lag compensation.
摘要翻译：提供了通过使用X射线图像和暗图像来精确地补偿X射线扫描的图像滞后的X射线检测器和X射线检测器的驱动方法。通过提高图像滞后补偿的精度，可以减少X射线扫描的待机时间。

15. 发明申请

US20110303853A1 X-ray detector and X-ray image detecting method 有权
标题翻译： X射线检测器和X射线图像检测方法
公开(公告)号：US20110303853A1
公开(公告)日：2011-12-15
申请号：US13067545
申请日：2011-06-08
申请人： Kwan-Wook Jung
发明人： Kwan-Wook Jung
IPC分类号： G01T1/24
CPC分类号： H04N5/32 , H04N5/361 , H04N5/3651
摘要： An X-ray detector and a method of detecting an X-ray image. The method includes: during an offset adjustment, sequentially outputting first gate signals to a plurality of gate lines for turning on the switching devices; during an offset read out, sequentially outputting second gate signals to the plurality of gate lines for turning on the switching devices after a first window time; and during the offset read out, reading electrical signals output by the switching device.
摘要翻译： X射线检测器和X射线图像检测方法。该方法包括：在偏移调整期间，顺序地将第一门信号输出到多条栅极线，用于接通开关器件; 在偏移读出期间，在第一窗口时间之后，顺序地将多个栅极线输出第二栅极信号，以接通开关器件; 并且在偏移读出期间，读取由开关装置输出的电信号。

16. 发明授权

US08067745B2 X-ray detector and manufacturing method thereof 有权
标题翻译： X射线检测器及其制造方法
公开(公告)号：US08067745B2
公开(公告)日：2011-11-29
申请号：US12354135
申请日：2009-01-15
申请人： Kwan-Wook Jung , Kyung-Sang Goo , Dae-Ho Choo
发明人： Kwan-Wook Jung , Kyung-Sang Goo , Dae-Ho Choo
IPC分类号： H01L27/146 , H05G1/64
CPC分类号： G01T1/2018 , G01T1/24 , G01T1/2928
摘要： An X-ray detector includes; a panel having a plurality of photo-detecting pixels generating electrical signals in response to the detection of X-rays, a gate driver providing a gate signal to the plurality of photo-detecting pixels, wherein the photo-detecting pixels output the electrical signals in response to the gate signal, a readout integrated circuit reading out the electrical signal in response to the gate signal, a main board including a controller receiving the electrical signal and converting the electrical signal to an image signal, a film attached to the panel and the main board, the film including a signal line electrically connecting the readout integrated circuit to the panel and main board, wherein the readout integrated circuit is mounted on the film, and a shielding layer covering the film and comprising a conductive material, wherein the shielding layer prevents externally applied electromagnetic signals from passing through the film.
摘要翻译： X射线检测器包括：具有响应于X射线检测而产生电信号的多个光检测像素的面板，向多个光检测像素提供门信号的栅极驱动器，其中光检测像素输出电信号响应于门信号的读出集成电路，响应于门信号读出电信号的读出集成电路，包括接收电信号并将电信号转换成图像信号的控制器的主板，附接到面板的胶片和所述胶片包括将读出集成电路与面板和主板电连接的信号线，其中所述读出集成电路安装在所述薄膜上，以及覆盖所述薄膜并包含导电材料的屏蔽层，其中所述屏蔽层防止外部施加的电磁信号通过胶片。

17. 发明申请

US20100163882A1 THIN FILM TRANSISTOR ARRAY SUBSTRATE FOR AN X-RAY DETECTOR AND METHOD OF FABRICATING THE SAME 有权
标题翻译：用于X射线探测器的薄膜晶体管阵列基板及其制造方法
公开(公告)号：US20100163882A1
公开(公告)日：2010-07-01
申请号：US12647352
申请日：2009-12-24
申请人： Kwan-Wook Jung
发明人： Kwan-Wook Jung
IPC分类号： H01L31/08 , H01L31/18 , H01L31/036
CPC分类号： H01L27/14687 , H01L27/14632 , H01L27/14676 , H01L31/115
摘要： A thin film transistor (TFT) array substrate for an X-ray detector and a method of fabricating the same are provided. The TFT array substrate includes a substrate, a gate line formed on the substrate, a data line crossing the gate line, a thin film transistor including a gate electrode, a source electrode, and a drain electrode, a first electrode connected to the drain electrode, a passivation layer formed over the gate line, the data line, the thin film transistor and the first electrode, a photoconductor formed over the passivation layer and connected to the first electrode, and a second electrode formed on the photoconductor.
摘要翻译：提供了一种用于X射线检测器的薄膜晶体管（TFT）阵列基板及其制造方法。 TFT阵列基板包括基板，形成在基板上的栅极线，与栅极线交叉的数据线，包括栅电极，源电极和漏电极的薄膜晶体管，连接到漏电极的第一电极，形成在栅极线上的钝化层，数据线，薄膜晶体管和第一电极，形成在钝化层上并连接到第一电极的光电导体，以及形成在光电导体上的第二电极。

18. 发明授权

US07737445B2 Contact portion of semiconductor device, and thin film transistor array panel for display device including the contact portion 有权
标题翻译：半导体器件的接触部分和包括该接触部分的显示器件的薄膜晶体管阵列面板
公开(公告)号：US07737445B2
公开(公告)日：2010-06-15
申请号：US12030992
申请日：2008-02-14
申请人： Bo Sung Kim , Kwan-Wook Jung , Wan-Shick Hong , Sang-Gab Kim , Mun-Pyo Hong
发明人： Bo Sung Kim , Kwan-Wook Jung , Wan-Shick Hong , Sang-Gab Kim , Mun-Pyo Hong
IPC分类号： H01L29/04
CPC分类号： G02F1/13458 , G02F1/136286 , G02F2001/136295 , H01L27/124 , H01L27/1244 , H01L27/1248 , H01L27/1288
摘要： A method for manufacturing a semiconductor device including forming a first wire on a substrate, forming a lower film on the first wire, forming a photosensitive pattern on the lower film using a photosensitive material, forming contact holes for exposing the first wire by etching the lower film using the photosensitive film as an etching mask, removing part of the photosensitive film pattern by an ashing process to expose a borderline of the lower film defining the contact holes and forming second wire connected to the first wire via the contact holes.
摘要翻译：一种制造半导体器件的方法，包括在衬底上形成第一线，在第一线上形成下膜，使用感光材料在下膜上形成感光图案，形成用于通过蚀刻下部的第一线露出的接触孔使用感光膜作为蚀刻掩模的膜，通过灰化处理去除部分感光膜图案以暴露限定接触孔的下膜的边界线，并且经由接触孔形成连接到第一线的第二线。

19. 发明授权

US07615783B2 Thin film transistor array substrate using low dielectric insulating layer and method of fabricating the same 有权
公开(公告)号：US07615783B2
公开(公告)日：2009-11-10
申请号：US11436073
申请日：2006-05-17
申请人： Joon-Hoo Choi , Wan-Shick Hong , Dae-Jin Kwon , Kwan-Wook Jung , Sang-Gab Kim , Kyu-Ha Jung
发明人： Joon-Hoo Choi , Wan-Shick Hong , Dae-Jin Kwon , Kwan-Wook Jung , Sang-Gab Kim , Kyu-Ha Jung
IPC分类号： H01L51/30
CPC分类号： H01L29/66765 , G02F1/136227 , G02F2001/133357 , G02F2001/136236 , H01L27/12 , H01L29/458 , H01L29/4908
摘要： A thin film transistor array substrate is provided. The substrate includes an insulating substrate, a first signal line formed on the insulating substrate, a first insulating layer formed on the first signal line, a second signal line formed on the first insulating layer while crossing over the first signal line, a thin film transistor connected to the first and the second signal lines, a second insulating layer formed on the thin film transistor, the second insulating layer having dielectric constant about 4.0 or less, and the second insulating layer having a first contact hole exposing a predetermined electrode of the thin film transistor, and a first pixel electrode formed on the second insulating layer while being connected to the predetermined electrode of the thin film transistor through the first contact hole.

20. 发明申请

US20080121890A1 DEPOSITION METHOD OF INSULATING LAYERS HAVING LOW DIELECTRIC CONSTANT OF SEMICONDUCTOR DEVICE, A THIN FILM TRANSISTOR SUBSTRATE USING THE SAME AND A METHOD OF MANUFACTURING THE SAME 有权
标题翻译：具有半导体器件的低介电常数的绝缘层的沉积方法，使用该半导体器件的薄膜晶体管衬底及其制造方法
公开(公告)号：US20080121890A1
公开(公告)日：2008-05-29
申请号：US11950476
申请日：2007-12-05
申请人： Sung-Hoon YANG , Wan-Shick Hong , Kwan-Wook Jung
发明人： Sung-Hoon YANG , Wan-Shick Hong , Kwan-Wook Jung
IPC分类号： H01L29/786
CPC分类号： G02F1/136227 , C23C16/30 , G02F2001/136222 , H01L27/12 , H01L27/1248 , H01L27/1288 , H01L27/3244 , H01L29/458 , H01L29/4908 , H01L51/56
摘要： The present invention relates to a process for vapor depositing a low dielectric insulating film, a thin film transistor using the same, and a preparation method thereof, and more particularly to a process for vapor deposition of low dielectric insulating film that can significantly improve a vapor deposition speed while maintaining properties of the low dielectric insulating film, thereby solving parasitic capacitance problems to realize a high aperture ratio structure, and can reduce a process time by using silane gas when vapor depositing an insulating film by a CVD or PECVD method to form a protection film for a semiconductor device. The present invention also relates to a thin film transistor using the process and preparation method thereof.
摘要翻译：本发明涉及一种用于气相沉积低介电绝缘膜的方法，使用其的薄膜晶体管及其制备方法，更具体地涉及可以显着改善蒸气的低介电绝缘膜的气相沉积方法同时保持低介电绝缘膜的性能，从而解决了寄生电容问题，以实现高开口率结构，并且通过使用硅烷气体通过CVD或PECVD方法蒸镀绝缘膜时可以减少处理时间，以形成用于半导体器件的保护膜。本发明还涉及使用该方法及其制备方法的薄膜晶体管。

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