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11. 发明授权

US5903588A Laser with a selectively changed current confining layer 失效
标题翻译：具有选择性改变的电流限制层的激光器
公开(公告)号：US5903588A
公开(公告)日：1999-05-11
申请号：US812620
申请日：1997-03-06
申请人： James K. Guenter , Ralph H. Johnson
发明人： James K. Guenter , Ralph H. Johnson
IPC分类号： H01S5/18 , H01S5/042 , H01S5/183 , H01S3/191
CPC分类号： H01S5/1833 , H01S5/18311 , H01S5/0425 , H01S5/2081
摘要： A laser structure is provided with two current confining layers of a material that is subject to oxidation in the presence of an oxidizing agent. The laser structure is shaped to expose edges of the current confining layers to permit the edges to be exposed to the oxidizing agent. The current confining layers are oxidized selectively to create electrically resistive material at the oxidized portions and electrically conductive material at the unoxidized portions. The unoxidized portions of the layers are surrounded by the oxidized and electrically resistive portions in order to direct current from one electrical contact pad by passing through a preselected portion of an active region of the laser. The laser structure can be a vertical cavity surface emitting laser. The device achieves the current confining and directing function without the need to use ion bombardment or implantation to provide the current confining structure within the body of the laser.
摘要翻译：激光结构设置有在氧化剂存在下经历氧化的材料的两个电流限制层。激光结构被成形为暴露电流限制层的边缘以允许边缘暴露于氧化剂。电流限制层被选择性氧化以在氧化部分处形成电阻材料，并在未氧化部分处形成导电材料。层的未氧化部分被氧化和电阻部分包围，以便通过穿过激光器的有源区域的预选部分来引导来自一个电接触焊盘的电流。激光器结构可以是垂直腔表面发射激光器。该装置实现了当前的限制和引导功能，而不需要使用离子轰击或植入来在激光器的主体内提供电流限制结构。

12. 发明授权

US08455279B2 Surface gratings on VCSELS for polarization pinning 有权
标题翻译： VCSELS上的表面光栅用于极化锁定
公开(公告)号：US08455279B2
公开(公告)日：2013-06-04
申请号：US13210306
申请日：2011-08-15
申请人： Ralph H. Johnson , James K. Guenter
发明人： Ralph H. Johnson , James K. Guenter
IPC分类号： H01L21/00
CPC分类号： H01S5/18355 , H01S5/18311 , H01S5/18319 , H01S5/18386
摘要： Methods for manufacturing a polarization pinned vertical cavity surface emitting laser (VCSEL). Steps include growing a lower mirror on a substrate; growing an active region on the lower mirror; growing an upper mirror on the active region; depositing a grating layer on the upper mirror; and etching a grating into the grating layer.
摘要翻译：用于制造偏振锁定垂直腔表面发射激光器（VCSEL）的方法。步骤包括在基材上生长下反射镜; 在下镜上生长活跃区域; 在活跃地区生长上镜; 在上镜上沉积光栅层; 并将光栅蚀刻到光栅层中。

13. 发明授权

US08000374B2 Surface gratings on VCSELs for polarization pinning 有权
标题翻译： VCSEL上的表面光栅用于极化锁定
公开(公告)号：US08000374B2
公开(公告)日：2011-08-16
申请号：US11299638
申请日：2005-12-12
申请人： Ralph H. Johnson , James K. Guenter
发明人： Ralph H. Johnson , James K. Guenter
IPC分类号： H01S3/08 , H01S5/00
CPC分类号： H01S5/18355 , H01S5/18311 , H01S5/18319 , H01S5/18386
摘要： A polarization pinned vertical cavity surface emitting laser (VCSEL). A VCSEL designed to be polarization pinned includes an upper mirror. An active region is connected on the upper mirror. A lower mirror is connected to the active region. A grating layer is deposited to the upper mirror. The grating layer includes a low index of refraction layer formed by deposition on the upper mirror. The grating layer further includes a high index of refraction layer formed by deposition on the low index of refraction layer. A grating is formed into the grating layer.
摘要翻译：偏振锁定垂直腔表面发射激光器（VCSEL）。被设计为偏振锁定的VCSEL包括上镜。有源区连接在上镜上。下反射镜连接到活动区域。光栅层沉积到上镜。光栅层包括通过沉积在上反射镜上形成的低折射率折射率层。光栅层还包括通过沉积在低折射率折射率层上形成的高折射率折射率层。格栅形成光栅层。

14. 发明授权

US07009224B2 Metamorphic long wavelength high-speed photodiode 失效
标题翻译：变质长波长高速光电二极管
公开(公告)号：US07009224B2
公开(公告)日：2006-03-07
申请号：US10413186
申请日：2003-04-14
申请人： Ralph H. Johnson , James K. Guenter , James R. Biard
发明人： Ralph H. Johnson , James K. Guenter , James R. Biard
IPC分类号： H01L31/0336 , H01L31/0328
CPC分类号： H01L31/105 , H01L21/02381 , H01L21/02395 , H01L21/02463 , H01L21/02505 , H01L21/02507 , H01L21/0251 , H01L21/02546 , H01L31/184 , Y02E10/544 , Y10S438/938
摘要： A metamorphic device including a substrate structure upon which a semiconductor device can be formed. In the metamorphic device, a buffer layer matching a substrate lattice constant is formed at normal growth temperatures and a thin grading layer which grades past the desired lattice constant is configured at a low temperature. A reverse grading layer grades the lattice constant back to match a desired lattice constant. Thereafter, a thick layer is formed thereon, based on the desired lattice constant. Annealing can then occur to isolate dislocated material in at least the grading layer and the reverse grading layer. Thereon a strained layer superlattice is created upon which a high-speed photodiode or other semiconductor device can be formed.
摘要翻译：一种变质装置，其包括可以形成半导体器件的基板结构。在变质装置中，在正常生长温度下形成与衬底晶格常数相匹配的缓冲层，并且在低温下配置经过所需晶格常数的薄分级层。反向分级层将晶格常数回归以匹配所需的晶格常数。此后，基于所需的晶格常数，在其上形成厚层。然后可以发生退火以在至少分级层和反向分级层中分离脱位的材料。在其上形成了可以形成高速光电二极管或其它半导体器件的应变层超晶格。

15. 发明授权

US06965626B2 Single mode VCSEL 有权
标题翻译：单模VCSEL
公开(公告)号：US06965626B2
公开(公告)日：2005-11-15
申请号：US10232382
申请日：2002-09-03
申请人： James A. Tatum , James K Guenter , Ralph H. Johnson
发明人： James A. Tatum , James K Guenter , Ralph H. Johnson
IPC分类号： H01S3/08 , H01S3/097 , H01S5/00 , H01S5/024 , H01S5/042 , H01S5/183
CPC分类号： H01S5/18341 , H01S5/005 , H01S5/0207 , H01S5/18305 , H01S5/1833 , H01S5/18369 , H01S2301/166
摘要： A VCSEL having a metallic heat spreading layer adjacent a semiconductor buffer layer containing an insulating structure. The heat spreading layer includes an opening that enables light emitted by an active region to reflect from a distributed Bragg reflector (DBR) top mirror located above the heat spreading layer. A substrate is below the active region. A lower contact provides electrical current to that substrate. The lower contact includes an opening that enables light emitted from the active region to reflect from a distributed Bragg reflector (DBR) lower mirror. Beneficially, the substrate includes a slot that enables light to pass through an opening in the lower contact. That slot acts as an alignment structure that enables optical alignment of an external feature to the VCSEL.
摘要翻译：具有金属散热层的VCSEL，该金属热扩散层与包含绝缘结构的半导体缓冲层相邻。散热层包括使有源区域发射的光能够从位于热扩散层上方的布拉格反射镜（DBR）上反射镜反射的开口。底物低于活性区。较低的触点为该基片提供电流。下部接触件包括使从有源区域发射的光能够从分布式布拉格反射镜（DBR）下反射镜的开口。有利地，衬底包括使光能够穿过下接触件中的开口的狭槽。该槽充当对准结构，使外部特征能够与VCSEL进行光学对准。

16. 发明申请

US20120213243A1 VERTICAL CAVITY SURFACE EMITTING LASER WITH UNDOPED TOP MIRROR 有权
标题翻译：垂直孔表面发射激光与无反射顶镜
公开(公告)号：US20120213243A1
公开(公告)日：2012-08-23
申请号：US13460725
申请日：2012-04-30
申请人： Ralph H. Johnson , R. Scott Penner , James Robert Biard
发明人： Ralph H. Johnson , R. Scott Penner , James Robert Biard
IPC分类号： H01S3/08
CPC分类号： H01S5/18308 , H01S5/18313 , H01S5/1833 , H01S5/18341 , H01S5/18369 , H01S5/2086 , H01S5/3095 , H01S5/3211
摘要： A VCSEL with undoped top mirror. The VCSEL is formed from an epitaxial structure deposited on a substrate, and a periodically doped conduction layer is coupled to the undoped top minor. A periodically doped spacer layer is coupled to an active region. An undoped bottom minor coupled to the periodically doped spacer layer. A first intracavity contact is coupled to the periodically doped conduction layer and a second intracavity contact is coupled to the periodically doped spacer layer.
摘要翻译：具有未掺杂顶镜的VCSEL。 VCSEL由沉积在衬底上的外延结构形成，并且周期性掺杂的导电层耦合到未掺杂的顶部次要器件。周期性掺杂的间隔层耦合到有源区。耦合到周期性掺杂的间隔层的未掺杂的底部小子。第一腔内触点耦合到周期性掺杂的导电层，并且第二腔内触点耦合到周期性掺杂的间隔层。

17. 发明申请

US20110045621A1 VERTICAL CAVITY SURFACE EMITTING LASER HAVING MULTIPLE TOP-SIDE CONTACTS 有权
标题翻译：具有多个顶部接触的垂直孔表面发射激光
公开(公告)号：US20110045621A1
公开(公告)日：2011-02-24
申请号：US12917449
申请日：2010-11-01
申请人： Ralph H. Johnson , R. Scott Penner , James Robert Biard , Colby Fitzgerald
发明人： Ralph H. Johnson , R. Scott Penner , James Robert Biard , Colby Fitzgerald
IPC分类号： H01L21/30
CPC分类号： H01S5/18308 , H01S5/0425 , H01S5/18311 , H01S5/1833 , H01S5/18341 , H01S5/18358 , H01S5/305
摘要： A VCSEL with undoped mirrors. An essentially undoped bottom DBR mirror is formed on a substrate. A periodically doped first conduction layer region is formed on the bottom DBR mirror. The first conduction layer region is heavily doped at a location where the optical electric field is at about a minimum. An active layer, including quantum wells, is on the first conduction layer region. A periodically doped second conduction layer region is connected to the active layer. The second conduction layer region is heavily doped where the optical electric field is at a minimum. An aperture is formed in the epitaxial structure above the quantum wells. A top mirror coupled to the periodically doped second conduction layer region. The top mirror is essentially undoped and formed in a mesa structure. An oxide is formed around the mesa structure to protect the top mirror during wet oxidation processes.
摘要翻译：具有未掺杂镜像的VCSEL。在基板上形成基本上未掺杂的底部DBR反射镜。在底部DBR反射镜上形成周期性掺杂的第一导电层区域。第一导电层区域在光电场处于最小值的位置处被重掺杂。包括量子阱的有源层在第一导电层区域上。周期性掺杂的第二导电层区域连接到有源层。第二导电层区域是重掺杂的，其中光电场处于最小。在量子阱上方的外延结构中形成孔径。耦合到周期性掺杂的第二导电层区域的上反射镜。顶部镜子基本上是未掺杂的并且形成在台面结构中。在台面结构周围形成氧化物，以在湿式氧化过程中保护顶镜。

18. 发明授权

US08193019B2 Vertical cavity surface emitting laser having multiple top-side contacts 有权
标题翻译：具有多个顶侧触点的垂直腔面发射激光器
公开(公告)号：US08193019B2
公开(公告)日：2012-06-05
申请号：US12917449
申请日：2010-11-01
申请人： Ralph H. Johnson , R. Scott Penner , James Robert Biard , Colby Fitzgerald
发明人： Ralph H. Johnson , R. Scott Penner , James Robert Biard , Colby Fitzgerald
IPC分类号： H01L21/00
CPC分类号： H01S5/18308 , H01S5/0425 , H01S5/18311 , H01S5/1833 , H01S5/18341 , H01S5/18358 , H01S5/305
摘要： A VCSEL with undoped mirrors. An essentially undoped bottom DBR mirror is formed on a substrate. A periodically doped first conduction layer region is formed on the bottom DBR mirror. The first conduction layer region is heavily doped at a location where the optical electric field is at about a minimum. An active layer, including quantum wells, is on the first conduction layer region. A periodically doped second conduction layer region is connected to the active layer. The second conduction layer region is heavily doped where the optical electric field is at a minimum. An aperture is formed in the epitaxial structure above the quantum wells. A top mirror coupled to the periodically doped second conduction layer region. The top mirror is essentially undoped and formed in a mesa structure. An oxide is formed around the mesa structure to protect the top mirror during wet oxidation processes.
摘要翻译：具有未掺杂镜像的VCSEL。在基板上形成基本上未掺杂的底部DBR反射镜。在底部DBR镜上形成周期性掺杂的第一导电层区域。第一导电层区域在光电场处于最小值的位置处被重掺杂。包括量子阱的有源层在第一导电层区域上。周期性掺杂的第二导电层区域连接到有源层。第二导电层区域是重掺杂的，其中光电场处于最小。在量子阱上方的外延结构中形成孔径。耦合到周期性掺杂的第二导电层区域的上反射镜。顶部镜子基本上是未掺杂的并且形成在台面结构中。在台面结构周围形成氧化物，以在湿式氧化过程中保护顶镜。

19. 发明授权

US07860137B2 Vertical cavity surface emitting laser with undoped top mirror 有权
标题翻译：垂直腔表面发射激光器与无顶顶镜
公开(公告)号：US07860137B2
公开(公告)日：2010-12-28
申请号：US11222433
申请日：2005-09-08
申请人： Ralph H. Johnson , R. Scott Penner , James Robert Biard
发明人： Ralph H. Johnson , R. Scott Penner , James Robert Biard
IPC分类号： H01S5/00
CPC分类号： H01S5/18308 , H01S5/18313 , H01S5/1833 , H01S5/18341 , H01S5/18369 , H01S5/2086 , H01S5/3095 , H01S5/3211
摘要： A VCSEL with undoped top mirror. The VCSEL is formed from an epitaxial structure deposited on a substrate. A doped bottom mirror is formed on the substrate. An active layer that includes quantum wells is formed on the bottom mirror. A periodically doped conduction layer is formed on the active layer. The periodically doped conduction layer is heavily doped at locations where the optical energy is at a minimum when the VCSEL is in operation. A current aperture is used between the conduction layer and the active region. An undoped top mirror is formed on the heavily doped conduction layer.
摘要翻译：具有未掺杂顶镜的VCSEL。 VCSEL由沉积在衬底上的外延结构形成。在衬底上形成掺杂的底镜。在底部反射镜上形成包括量子阱的有源层。在有源层上形成周期性掺杂的导电层。周期性掺杂的导电层在VCSEL工作时光能量最小的位置被重掺杂。在导电层和有源区之间使用电流孔。在重掺杂导电层上形成未掺杂的顶部反射镜。

20. 发明授权

US09124069B2 Vertical cavity surface emitting laser with undoped top mirror 有权
标题翻译：垂直腔表面发射激光器与无顶顶镜
公开(公告)号：US09124069B2
公开(公告)日：2015-09-01
申请号：US13460725
申请日：2012-04-30
申请人： Ralph H. Johnson , R. Scott Penner , James Robert Biard
发明人： Ralph H. Johnson , R. Scott Penner , James Robert Biard
IPC分类号： H01S5/183 , H01S5/20 , H01S5/30 , H01S5/32
CPC分类号： H01S5/18308 , H01S5/18313 , H01S5/1833 , H01S5/18341 , H01S5/18369 , H01S5/2086 , H01S5/3095 , H01S5/3211
摘要： A VCSEL with undoped top mirror. The VCSEL is formed from an epitaxial structure deposited on a substrate, and a periodically doped conduction layer is coupled to the undoped top minor. A periodically doped spacer layer is coupled to an active region. An undoped bottom minor coupled to the periodically doped spacer layer. A first intracavity contact is coupled to the periodically doped conduction layer and a second intracavity contact is coupled to the periodically doped spacer layer.
摘要翻译：具有未掺杂顶镜的VCSEL。 VCSEL由沉积在衬底上的外延结构形成，并且周期性掺杂的导电层耦合到未掺杂的顶部次要器件。周期性掺杂的间隔层耦合到有源区。耦合到周期性掺杂的间隔层的未掺杂的底部小子。第一腔内触点耦合到周期性掺杂的导电层，并且第二腔内触点耦合到周期性掺杂的间隔层。

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