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11. 发明申请

US20060149029A1 Diamine compound having dendron side chain and liquid crystal aligning agent using same 审中-公开
标题翻译：具有枝晶侧链的二胺化合物和使用其的液晶取向剂
公开(公告)号：US20060149029A1
公开(公告)日：2006-07-06
申请号：US11221156
申请日：2005-09-06
申请人： Jae Oh , Moo Lee , Bum Lee , O Kwon , Won Dong , Yusuke Tsuda
发明人： Jae Oh , Moo Lee , Bum Lee , O Kwon , Won Dong , Yusuke Tsuda
IPC分类号： C08G69/08
CPC分类号： C08G73/10
摘要： Disclosed herein is a novel functional diamine compound having a dendron structure, polyamic acid which is produced using functional diamine, aromatic cyclic diamine, aliphatic cyclic acid dianhydride, and aromatic cyclic acid dianhydride, polyimide which is produced by imidizing polyamic acid, and an LC alignment film produced using polyimide. Even if the diamine compound is used in a small amount, it is possible to realize a high pretilt angle, thus the pretilt angle is easily controlled. Therefore, it can be used to produce an LC alignment film using a twisted nematic (TN) mode, in which the pretilt angle of liquid crystal is low, and a vertically aligned (VA) mode, which requires a high pretilt angle of about 90°.
摘要翻译：本文公开了具有树突状结构的新型官能二胺化合物，使用官能二胺，芳族环二胺，脂族环酸二酐和芳族环酸二酐制备的聚酰胺酸，通过酰亚胺化聚酰胺酸制备的聚酰亚胺和LC对准使用聚酰亚胺生产的薄膜。即使少量使用二胺化合物，也可以实现高预倾角，因此容易控制预倾角。因此，可以使用液晶的预倾角为低的扭曲向列（TN）模式和垂直取向（VA）模式来制造LC取向膜，其需要大约90°的预倾角 °。

12. 发明申请

US20060043812A1 Permanent magnet assisted synRM and method for imposing magnetic force thereon 有权
标题翻译：永磁辅助synRM及其上施加磁力的方法
公开(公告)号：US20060043812A1
公开(公告)日：2006-03-02
申请号：US11028314
申请日：2005-01-04
申请人： Dal Cheong , Kyung Lee , Hyun Shin , June Won , Jae Oh , Gil Lee
发明人： Dal Cheong , Kyung Lee , Hyun Shin , June Won , Jae Oh , Gil Lee
IPC分类号： H02K21/12
CPC分类号： H01F13/003 , H02K1/246 , H02K1/2766 , H02K15/03
摘要： A PMA (Permanent Magnet Assisted) synRM and a method for imposing a magnetic force thereon. Magnets are inserted into outer flux barriers of a plurality of flux barriers formed along the radius of a rotor, and bridges or slim portions are formed on inner flux barriers at positions corresponding to the positions of the magnets so that the magnetic force is imposed on the magnets through coils. Since the number of the flux barriers is sufficiently increased while the amount of the magnets consumed is decreased, the PMA synRM has increased efficiency and reduced production costs.
摘要翻译：一种PMA（永磁辅助）synRM及其上施加磁力的方法。将磁铁插入沿着转子半径形成的多个通量屏障的外部通量屏障中，并且在对应于磁体位置的位置处，在内部磁通屏障上形成桥梁或细长部分，使得磁力施加在磁铁通过线圈。由于磁通屏障的数量充分增加，而消耗的磁体的量减少，因此PMA synRM提高了效率并降低了生产成本。

13. 发明申请

US20050142704A1 Method for fabricating liquid crystal display device 有权
标题翻译：制造液晶显示装置的方法
公开(公告)号：US20050142704A1
公开(公告)日：2005-06-30
申请号：US11017853
申请日：2004-12-22
申请人： Jae Oh , Kyoung Lee , Sung Hong
发明人： Jae Oh , Kyoung Lee , Sung Hong
IPC分类号： G02F1/136 , G02F1/1362 , H01L21/77 , H01L21/84 , H01L27/12 , H01L21/00 , H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： G02F1/13458 , G02F1/136227 , H01L27/12 , H01L27/124 , H01L27/1288
摘要： Disclosed is a method for fabricating a thin film transistor for a liquid crystal display device using four masks and without using a diffraction mask. The method of the present invention uses a first mask when forming a gate electrode, a second mask when forming an active pattern, a third mask when forming a plurality of contact holes at an upper portion of a channel layer, and a fourth mask when forming a pixel electrode and source and drain electrodes, so that the resulting liquid crystal display device may be completed by four masks without using a diffraction exposure method. Instead of using a diffraction mask, the present invention uses different etching rates between an insulating layer and an electrode layer, which is used for source and drain electrodes, in fabricating a thin film transistor.
摘要翻译：公开了一种使用四个掩模并且不使用衍射掩模来制造用于液晶显示装置的薄膜晶体管的方法。本发明的方法在形成栅电极时使用第一掩模，当形成有源图案时使用第二掩模，当在沟道层的上部形成多个接触孔时，第三掩模和第四掩模像素电极和源电极和漏电极，使得所得到的液晶显示装置可以通过四个掩模完成而不使用衍射曝光方法。代替使用衍射掩模，本发明在制造薄膜晶体管时在绝缘层和用于源极和漏极的电极层之间使用不同的蚀刻速率。

14. 发明申请

US20050055419A1 Method and apparatus for platform independent network virtual memory (PINVM) hierarchy 审中-公开
标题翻译：用于平台独立网络虚拟内存（PINVM）层次结构的方法和装置
公开(公告)号：US20050055419A1
公开(公告)日：2005-03-10
申请号：US10848808
申请日：2004-05-19
申请人： Jae Oh
发明人： Jae Oh
IPC分类号： H04L29/06 , H04L29/08 , G06F15/167
CPC分类号： H04L67/16 , H04L29/06 , H04L67/14 , H04L69/10 , H04L69/329
摘要： A thin-client/server session is established using platform independent network virtual memory (PINVM). The server contains a collection of programs that are compiled for the client architecture. The client finds a server for PINVM. The server provides the client with the list of programs as well as the size of virtual memory space that will be allowed for the client to use. The client-side daemon process adjusts the available memory size so that the client OS thinks the memory size available is as large as the virtual memory size provided by the server during the session. The network virtual memory hierarchy is established, with the server's memory and hard disk attached to the client's physical memory hierarchy. After the client selects a program to launch, the server creates a virtual address space for the client program using the network memory hierarchy established. The program can now run on the client.
摘要翻译：使用独立于平台的网络虚拟内存（PINVM）建立瘦客户端/服务器会话。服务器包含为客户端架构编译的程序集合。客户端找到一个用于PINVM的服务器。服务器为客户端提供程序列表以及允许客户端使用的虚拟内存空间的大小。客户端守护进程调整可用的内存大小，以便客户端操作系统认为可用的内存大小与会话期间由服务器提供的虚拟内存大小一样大。建立网络虚拟内存层次结构，服务器的内存和硬盘连接到客户端的物理内存层次结构。客户端选择程序启动后，服务器将使用建立的网络内存层次结构为客户端程序创建一个虚拟地址空间。该程序现在可以在客户端上运行。

15. 发明申请

US20080005763A1 Broadcast receiver and method for performing closed caption 审中-公开
标题翻译：广播接收机和执行闭路字幕的方法
公开(公告)号：US20080005763A1
公开(公告)日：2008-01-03
申请号：US11819466
申请日：2007-06-27
申请人： Jae Oh
发明人： Jae Oh
IPC分类号： H04N7/10
CPC分类号： H04N7/0882
摘要： A host comprises a host controller configured to receive a first call for a specified attribute for closed caption from an application program; and the host controller further configured to return a predefined value to the application program or to perform exception handling in response to the first call when the specified attribute for closed caption is not supported by the host. And, the host controller is further configured to receive a second call requesting an array of available attributes for closed caption from the application program and to return the array of available attributes to the application program in response to the second call. Also, the host controller is further configured to return an array of available attributes for closed caption to the application program in response to the first call when the specified attribute for closed caption is not supported by the host.
摘要翻译：主机包括：主机控制器，被配置为从应用程序接收用于闭路字幕的指定属性的第一呼叫; 并且所述主机控制器还被配置为当所述主机不支持所述用于隐藏字幕的所述指定属性时，响应于所述第一呼叫，将预定义值返回给所述应用程序或执行异常处理。而且，所述主机控制器进一步被配置为从所述应用程序接收请求用于隐藏字幕的可用属性数组的第二呼叫，并响应于所述第二呼叫将所述可用属性阵列返回到所述应用程序。此外，主机控制器还被配置为当主机不支持用于隐藏字幕的指定属性时，响应于第一次呼叫，将用于隐藏字幕的可用属性的数组返回给应用程序。

16. 发明申请

US20070218577A1 Liquid crystal display panel and fabricating method thereof 有权
公开(公告)号：US20070218577A1
公开(公告)日：2007-09-20
申请号：US11643653
申请日：2006-12-22
申请人： Byung Ahn , Soon Yoo , Oh Kwon , Youn Chang , Heung Cho , Seung Nam , Jae Oh
发明人： Byung Ahn , Soon Yoo , Oh Kwon , Youn Chang , Heung Cho , Seung Nam , Jae Oh
IPC分类号： H01L21/00
CPC分类号： G02F1/13458 , G02F1/136286 , G02F2001/136236 , H01L27/124 , H01L27/1288 , H01L29/66742
摘要： A liquid crystal display (LCD) panel is fabricated with a reduced number of mask processes and includes a thin film transistor (TFT) array substrate and a color filter array substrate. The TFT array substrate includes gate and data lines insulatively crossing each other to define a pixel area, a TFT provided at the crossing of the gate and data lines, a passivation film protecting the TFT, a pixel electrode partially overlapped by the TFT, a gate pad connected to the gate line, and a data pad connected to the data line. The gate line, the gate and data pads, and the pixel electrode include a transparent conductive material. A gate metal material is on the transparent conductive material where the TFT partially overlaps the pixel electrode. The passivation film over the gate and data pads is removed to expose the transparent conductive material included within the gate and data pads.

17. 发明申请

US20060246671A1 Method of fabricating a transistor having a triple channel in a memory device 有权
标题翻译：在存储器件中制造具有三通道的晶体管的方法
公开(公告)号：US20060246671A1
公开(公告)日：2006-11-02
申请号：US11155833
申请日：2005-06-17
申请人： Se Jang , Yong Kim , Jae Oh
发明人： Se Jang , Yong Kim , Jae Oh
IPC分类号： H01L21/336 , H01L21/76
CPC分类号： H01L29/7851 , H01L27/105 , H01L27/1052 , H01L27/10876 , H01L27/10879 , H01L29/66621 , H01L29/66795
摘要： Disclosed is a method for fabricating a transistor of a memory device capable of preventing voids from being created when forming a low-resistant gate electrode. The method includes the steps of forming an active area by etching a semiconductor substrate, forming a field oxide layer in the semiconductor substrate and forming a recess by etching the field oxide layer. A gate insulation layer is formed along an upper surface of the active area and an exposed portion of the active area. A gate electrode is formed on the field oxide layer such that the gate electrode extends across an upper portion of the active area while being overlapped with a channel area and the recess. The first conductive layer to be patterned has the same thickness, so the low-resistant gate electrode is easily fabricated without forming the voids.
摘要翻译：公开了一种制造存储器件的晶体管的方法，该方法能够防止在形成低电阻栅电极时产生空隙。该方法包括以下步骤：通过蚀刻半导体衬底形成有源区，在半导体衬底中形成场氧化物层，并通过蚀刻场氧化物层形成凹陷。栅极绝缘层沿有源区的上表面和有源区的暴露部分形成。栅极电极形成在场氧化物层上，使得栅极电极延伸跨过有源区域的上部，同时与沟道区域和凹部重叠。待图案化的第一导电层具有相同的厚度，因此在不形成空隙的情况下容易地制造低电阻栅电极。

18. 发明申请

US20060244055A1 Transistor structure of memory device and method for fabricating the same 有权
公开(公告)号：US20060244055A1
公开(公告)日：2006-11-02
申请号：US11201951
申请日：2005-08-10
申请人： Se Jang , Yong Kim , Jae Oh , Jae Roh , Hyun Sohn
发明人： Se Jang , Yong Kim , Jae Oh , Jae Roh , Hyun Sohn
IPC分类号： H01L29/94
CPC分类号： H01L27/10876 , H01L27/10823 , H01L27/10826 , H01L27/10873 , H01L27/10879 , H01L29/66621 , H01L29/66795 , H01L29/7851
摘要： A memory device includes an active area protruding from a semiconductor substrate. A recess is formed in the active area. A field oxide layer is formed on the semiconductor substrate. A gate electrode extends across the active area while being overlapped with the recess. A gate insulation layer is interposed between the gate electrode and the active area. Source and drain areas are formed in the active area. The transistor structure above defines a recessed transistor structure if it is sectioned along a source-drain line and defines a Fin transistor structure if it is sectioned along a gate line. The transistor structure ensures sufficient data retention time and improves the current drivability while lowering the back bias dependency of a threshold voltage.

19. 发明申请

US20060227277A1 Method for forming pad electrode, method for manufacturing liquid crystal display device using the same, and liquid crystal display device manufactured by the method 有权
标题翻译：用于形成焊盘电极的方法，使用该电极的液晶显示装置的制造方法以及通过该方法制造的液晶显示装置
公开(公告)号：US20060227277A1
公开(公告)日：2006-10-12
申请号：US11304792
申请日：2005-12-16
申请人： Jae Oh
发明人： Jae Oh
IPC分类号： G02F1/1345
CPC分类号： G02F1/13458 , H01L27/124
摘要： A simplified method for forming a pad electrode without using an additional light-irradiation device is disclosed. The method includes forming a gate pad on a substrate, forming a gate insulating layer on a substrate surface, forming a data pad on the gate insulating layer, forming a passivation layer on the substrate surface, forming a first contact hole in the gate insulating layer and the passivation layer, forming a second contact hole in the passivation layer, coating a conductive photoresist on the substrate surface, and forming a gate pad electrode in the first contact hole and a data pad electrode in the second contact hole by ashing the conductive photoresist. The pad electrode is formed in a simple method of ashing the conductive photoresist, thereby decreasing costs.
摘要翻译：公开了一种用于在不使用额外的光照射装置的情况下形成焊盘电极的简化方法。该方法包括在衬底上形成栅极焊盘，在衬底表面上形成栅极绝缘层，在栅极绝缘层上形成数据焊盘，在衬底表面上形成钝化层，在栅极绝缘层中形成第一接触孔和钝化层，在钝化层中形成第二接触孔，在基板表面上涂覆导电光致抗蚀剂，以及在第一接触孔中形成栅极焊盘电极，以及通过灰化导电光致抗蚀剂而在第二接触孔中形成数据焊盘电极。焊盘电极以简单的灰化导电光致抗蚀剂的方法形成，从而降低成本。

20. 发明申请

US20050106787A1 Thin film transistor array substrate and method for manufacturing the same 有权
公开(公告)号：US20050106787A1
公开(公告)日：2005-05-19
申请号：US11004083
申请日：2004-12-06
申请人： Jae Oh , Seung Nam
发明人： Jae Oh , Seung Nam
IPC分类号： G02F1/1333 , G02F1/136 , G02F1/1368 , H01L21/00 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/15 , H01L29/786 , H01L31/062
CPC分类号： H01L27/1262 , H01L27/1214 , H01L27/1218 , H01L29/78603
摘要： A thin film transistor array substrate and a method for manufacturing the same is disclosed, in which it is possible to prevent mobile ions contained in a substrate from penetrating into a semiconductor layer by the gettering effect or neutralization in case soda lime glass is used for the substrate. The method includes forming a buffer layer on a substrate; doping impurity ions in the buffer layer; and forming a pixel electrode and a thin film transistor including a semiconductor layer on the buffer layer.

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