专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20070203375A1 COMPOSITE FOR CATALYTIC DISTILLATION AND ITS PREPARATION 有权
标题翻译：复合材料用于催化蒸馏及其制备
公开(公告)号：US20070203375A1
公开(公告)日：2007-08-30
申请号：US11741395
申请日：2007-04-27
申请人： Yuanyi YANG , Dongfeng Li , Wei Dai , Shuo Chen , Guoqing Wang , Lihua Liao , Jianmin Cheng , Yanlai Guo , Hui Peng
发明人： Yuanyi YANG , Dongfeng Li , Wei Dai , Shuo Chen , Guoqing Wang , Lihua Liao , Jianmin Cheng , Yanlai Guo , Hui Peng
IPC分类号： C07C5/00 , C07C2/64
CPC分类号： B01J37/0246 , B01J23/44 , B01J29/7007 , B01J37/0215 , B01J37/0225 , B01J37/0242 , B01J37/0244 , C07C5/05 , Y02P20/127 , Y02P20/52 , C07C11/06
摘要： The present invention relates to a composite for catalytic distillation, comprising a substrate material, and a modifying material and an active material, wherein said substrate material is made of porous materials, said modified material comprises at least one metal oxide, and said active material comprises an active component for a catalytic reaction. The catalytic distillation composite according to the present invention serves as both distillation packings and catalysts, and can allow catalysts to make the best of its efficiency, provide sufficient contact areas between gas and liquid phases, which facilitates mass transfer between gas and liquid phases, boosts effects in both reaction and separation and is liable for filling, removing and utilizing in industries.
摘要翻译：本发明涉及一种用于催化蒸馏的复合材料，其包括基材，以及改性材料和活性材料，其中所述基材由多孔材料制成，所述改性材料包括至少一种金属氧化物，所述活性材料包括用于催化反应的活性组分。根据本发明的催化蒸馏复合材料既用作蒸馏填料也用作催化剂，并且可以使催化剂充分发挥其效率，在气相和液相之间提供足够的接触面积，这有利于气相和液相之间的质量传递，在反应和分离过程中都会产生影响，并且可以在工业中进行填充，除去和利用。

12. 发明申请

US20050189551A1 High power and high brightness white LED assemblies and method for mass production of the same 审中-公开
标题翻译：大功率和高亮度白光LED组件及其大批量生产方法
公开(公告)号：US20050189551A1
公开(公告)日：2005-09-01
申请号：US10787816
申请日：2004-02-26
申请人： Hui Peng , Gang Peng
发明人： Hui Peng , Gang Peng
IPC分类号： H01L25/075 , H01L33/00 , H01L33/08 , H01L33/38
CPC分类号： H01L33/38 , H01L25/0756 , H01L33/0079 , H01L33/08 , H01L2224/48091 , H01L2224/48463 , H01L2924/00014
摘要： High power and high brightness light emitting diode (LED) assemblies emitting white light are disclosed. The present invention also discloses methods for cost effective mass production of the high power and high brightness LED assemblies with high throughput.
摘要翻译：公开了发射白光的大功率和高亮度发光二极管（LED）组件。本发明还公开了具有高产量的大功率和高亮度LED组件的成本有效的批量生产的方法。

13. 发明申请

US20050110040A1 TEXTURE FOR LOCALIZING AND MINIMIZING EFFECTS OF LATTICE CONSTANTS MISMATCH 审中-公开
标题翻译：用于本地化和最小化时间常数误差的效果的纹理
公开(公告)号：US20050110040A1
公开(公告)日：2005-05-26
申请号：US10723046
申请日：2003-11-26
申请人： Hui Peng
发明人： Hui Peng
IPC分类号： H01L21/20 , H01L31/0328 , H01L33/12
CPC分类号： H01L21/02494 , H01L21/0243 , H01L21/02639 , H01L33/12
摘要： Lattice mismatch is a critical issue for semiconductor devices including nitride LED. Texturing a substrate, texturing an epitaxial layer, and a method are disclosed in the present invention for localizing and minimizing the effects of lattice mismatch. Texturing may be applied for more than once on the same epitaxial wafer. Thus different epitaxial layers comprising different active layers may be grown on the same wafer and, therefore, the semiconductor device may emit light of a combination of different wavelengths.
摘要翻译：晶格失配是包括氮化物LED的半导体器件的关键问题。在本发明中公开了纹理化衬底，纹理化外延层和方法，用于定位并最小化晶格失配的影响。纹理可以在同一外延晶片上多次施加。因此，可以在同一晶片上生长包括不同有源层的不同外延层，因此，半导体器件可以发射不同波长的组合的光。

14. 发明申请

US20090085055A1 Method for Growing an Epitaxial Layer 审中-公开
标题翻译：生长外延层的方法
公开(公告)号：US20090085055A1
公开(公告)日：2009-04-02
申请号：US11863074
申请日：2007-09-27
申请人： Hui Peng , Heng Liu
发明人： Hui Peng , Heng Liu
IPC分类号： B32B3/10 , H01L33/00
CPC分类号： H01L33/0066 , H01L21/02378 , H01L21/02381 , H01L21/02387 , H01L21/02403 , H01L21/0242 , H01L21/02433 , H01L21/02538 , H01L21/02554 , H01L21/02639 , H01L21/02642 , H01L33/007 , H01L33/24 , Y10T428/24802
摘要： A method for growing an epitaxial layer and devices obtained by that method are disclosed. The method starts by providing a growth substrate having a top surface characterized by a first thermal expansion coefficient (TEC). A mask having a plurality of openings therein is formed on the top surface of the growth substrate. The top surface of the growth substrate is exposed through the openings in the mask. A first epitaxial layer of a first material is grown on the exposed top surface of the openings to form discrete islands of the first material. The discrete islands from adjacent openings in the mask do not contact one another. The first epitaxial layer is characterized by a second TEC. The first and second TECs differ by more than 5 percent. The mask includes a mask material on which the first material will not nucleate.
摘要翻译：公开了一种用于生长外延层的方法和通过该方法获得的器件。该方法通过提供具有由第一热膨胀系数（TEC）表征的顶表面的生长衬底开始。在生长衬底的顶表面上形成具有多个开口的掩模。生长衬底的顶表面通过掩模中的开口露出。在开口的暴露的顶表面上生长第一材料的第一外延层，以形成离散的第一材料岛。来自掩模中相邻开口的离散岛不相互接触。第一外延层的特征在于第二TEC。第一和第二TEC的差异超过5％。掩模包括掩模材料，第一材料将不在其上成核。

15. 发明授权

US07226884B2 Composite for catalytic distillation and its preparation 有权
标题翻译：复合催化蒸馏及其制备
公开(公告)号：US07226884B2
公开(公告)日：2007-06-05
申请号：US10361084
申请日：2003-02-06
申请人： Yuanyi Yang , Dongfeng Li , Wei Dai , Shuo Chen , Guoqing Wang , Lihua Liao , Jianmin Cheng , Yanlai Guo , Hui Peng
发明人： Yuanyi Yang , Dongfeng Li , Wei Dai , Shuo Chen , Guoqing Wang , Lihua Liao , Jianmin Cheng , Yanlai Guo , Hui Peng
IPC分类号： B01J29/04
CPC分类号： B01J37/0246 , B01J23/44 , B01J29/7007 , B01J37/0215 , B01J37/0225 , B01J37/0242 , B01J37/0244 , C07C5/05 , Y02P20/127 , Y02P20/52 , C07C11/06
摘要： The present invention relates to a composite for catalytic distillation, comprising a substrate material, and a modifying material and an active material, wherein said substrate material is made of porous materials, said modified material comprises at least one metal oxide, and said active material comprises an active component for a catalytic reaction. The catalytic distillation composite according to the present invention serves as both distillation packings and catalysts, and can allow catalysts to make the best of its effenciency, provide sufficient contact areas between gas and liquid phases, which facilitates mass transfer between gas and liquid phases, boosts effects in both reaction and separation and is liable for filling, removing and utilizing in industries.
摘要翻译：本发明涉及一种用于催化蒸馏的复合材料，其包括基材，以及改性材料和活性材料，其中所述基材由多孔材料制成，所述改性材料包括至少一种金属氧化物，所述活性材料包括用于催化反应的活性组分。根据本发明的催化蒸馏复合材料既用作蒸馏填料也用作催化剂，并且可以使催化剂充分发挥其效率，在气相和液相之间提供足够的接触面积，这有助于气相和液相之间的质量传递，在反应和分离过程中都会产生影响，并且可以在工业中进行填充，除去和利用。

16. 发明授权

US07148075B2 Vertical semiconductor devices or chips and method of mass production of the same 失效
标题翻译：垂直半导体器件或芯片及其批量生产方法相同
公开(公告)号：US07148075B2
公开(公告)日：2006-12-12
申请号：US10862086
申请日：2004-06-05
申请人： Hui Peng , Wei Luo
发明人： Hui Peng , Wei Luo
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L33/20 , H01L33/405
摘要： The vertical semiconductor chips or devices have all of advantages of flip chip technique and without its disadvantages. The present invention discloses methods of mass production of the vertical semiconductor chips or devices comprising GaN, GaInP, and GaInNP based LEDs with higher crystal quality, higher throughput, higher yield, and lower cost. The methods comprise the following process steps in the order presented: growing a first-type cladding layer, disposing a reflector/Ohmic layer, disposing a second intermediate layer, disposing an electrically conductive supporting plate, removing the original substrate and the first-type cladding layer exposed, growing an epitaxial layer comprising an active layer and a second-type cladding layer, disposing a second-electrode, and dicing into individual dies.
摘要翻译：垂直半导体芯片或器件具有倒装芯片技术的所有优点，没有其缺点。本发明公开了具有更高晶体质量，更高产量，更高产量和更低成本的包括GaN，GaInP和GaInNP的LED的垂直半导体芯片或器件的批量生产方法。该方法包括按顺序呈现的以下工艺步骤：生长第一型包覆层，设置反射器/欧姆层，设置第二中间层，设置导电支撑板，去除原始衬底和第一类型覆层生长包括有源层和第二类型覆层的外延层，设置第二电极，并将其切割成单独的管芯。

17. 发明申请

US20060124956A1 Quasi group III-nitride substrates and methods of mass production of the same 审中-公开
标题翻译：准III族氮化物基体及其大批量生产方法
公开(公告)号：US20060124956A1
公开(公告)日：2006-06-15
申请号：US11010514
申请日：2004-12-13
申请人： Hui Peng
发明人： Hui Peng
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/007 , C30B29/403 , H01L21/0237 , H01L21/02381 , H01L21/02458 , H01L21/02491 , H01L21/02502 , H01L21/0251 , H01L21/0254 , H01L33/0079 , H01L33/405
摘要： The present invention discloses the large area high quality quasi group III-nitride substrates comprising two categories: electrically conductive and isolating. The methods manufacturing the same comprise the following process steps in the order presented: disposing a first intermediate layer on a large area silicon (Si) original growth substrate, disposing a group III-nitride epitaxial layer including a n- or p-type epitaxial layer, disposing a reflector/Ohmic layer, disposing a second intermediate layer, disposing a supporting plate, removing the silicon original growth substrate and the first intermediate layer, then the group III-nitride epitaxial layer exposed. Vertical and lateral GaN based LEDs growing on electrically conductive and isolating quasi group III-nitride substrates respectively are disclosed.
摘要翻译：本发明公开了大面积高质量的准III族氮化物衬底，其包括两类：导电和隔离。制造该方法的方法包括以下顺序的步骤：在大面积硅（Si）原始生长衬底上设置第一中间层，将包括n型或p型外延层的III族氮化物外延层，设置反射器/欧姆层，设置第二中间层，设置支撑板，去除硅原始生长衬底和第一中间层，然后暴露III族氮化物外延层。公开了分别在导电和分离准III族氮化物衬底上生长的垂直和侧向GaN基LED。

18. 发明申请

US20050133806A1 P and N contact pad layout designs of GaN based LEDs for flip chip packaging 审中-公开
标题翻译：用于倒装芯片封装的GaN基LED的P和N接触焊盘布局设计
公开(公告)号：US20050133806A1
公开(公告)日：2005-06-23
申请号：US10738791
申请日：2003-12-17
申请人： Hui Peng , Gang Peng
发明人： Hui Peng , Gang Peng
IPC分类号： H01L29/22 , H01L33/08 , H01L33/20 , H01L33/38 , H01L33/62
CPC分类号： H01L33/382 , H01L33/08 , H01L33/20 , H01L33/62 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2924/00014 , H01L2924/12041 , H01L2224/05599
摘要： Based on the unique properties of the flip chip packaging process and GaN based LEDs with transparent substrates, new principles and methods for designing the layout of P contact pads and N contact pads are disclosed. The new designs of the present invention drastically increase the light extraction efficiency of LEDs by reducing the current crowding effect, increasing the uniformity of the spreading current in the active layer, and utilizing most of the available light emitting semiconductor material of the active layer. The present invention combined with the flip chip packaging process significantly improves the LEDs' heat dissipation.
摘要翻译：基于倒装芯片封装工艺的独特性质和具有透明衬底的GaN基LED，公开了用于设计P接触焊盘和N个接触焊盘布局的新原理和方法。本发明的新设计通过降低电流拥挤效应，增加有源层中的扩展电流的均匀性以及利用有源层的大部分可用的发光半导体材料，大大提高了LED的光提取效率。结合倒装芯片封装工艺的本发明显着地改善了LED的散热。

19. 发明授权

US06459008B1 Selective hydrogenation catalyst system and process for preparing the same and its use 有权
标题翻译：选择性氢化催化剂体系及其制备方法及其应用
公开(公告)号：US06459008B1
公开(公告)日：2002-10-01
申请号：US09599612
申请日：2000-06-23
申请人： Wei Dai , Jing Zhu , Helong Li , Yanlai Guo , Wei Mu , Hui Peng , Xin Chen
发明人： Wei Dai , Jing Zhu , Helong Li , Yanlai Guo , Wei Mu , Hui Peng , Xin Chen
IPC分类号： C07C402
CPC分类号： C10G45/40 , B01J23/6447
摘要： A selective hydrogenation catalyst system, and a process for its preparation and its use. The catalyst system of the invention comprises a support material, a Pd-containing catalyst component and a Bi-containing cocatalyst component. The catalyst system of the invention is manufactured by impregnating the support material simultaneously or separately with Pd-containing solution, Bi-containing solution or/and one or more other cocatalyst solutions, and then drying and calcining. The activity and selectivity of the catalyst system of the invention, in selective hydrogenation of acetylenic and diolefmic compounds in hydrocarbon feeds, are significantly improved, while the green oil formation and carbon deposit on the catalyst reduced, and the service life increased and production costs decreased.
摘要翻译：选择性氢化催化剂体系及其制备方法及其应用。本发明的催化剂体系包括载体材料，含Pd催化剂组分和含Bi助催化剂组分。本发明的催化剂体系是通过与含Pd溶液，含Bi的溶液或一种或多种其它助催化剂溶液同时或分开地浸渍载体材料，然后干燥和煅烧来制造的。本发明的催化剂体系在烃类进料中炔属和二烯化合物的选择性氢化中的活性和选择性得到显着提高，而催化剂上的绿色油形成和碳沉积减少，使用寿命增加，生产成本降低。

20. 发明公开

US20230390370A1 NEOANTIGEN VACCINES FOR PANCREATIC CANCER 审中-公开
公开(公告)号：US20230390370A1
公开(公告)日：2023-12-07
申请号：US18328209
申请日：2023-06-02
申请人： William Gillanders , William Hawkins , Simon Goedegebuure , Hui Peng , Lijin Li
发明人： William Gillanders , William Hawkins , Simon Goedegebuure , Hui Peng , Lijin Li
IPC分类号： A61K39/00 , A61P35/00 , A61K39/395
CPC分类号： A61K39/001152 , A61P35/00 , A61K39/3955 , A61K39/39566 , A61K39/0011 , A61K2039/53 , A61K2039/852 , A61K2039/585
摘要： The present disclosure is directed to compositions and methods for treating pancreatic cancer. A method of treating pancreatic cancer includes administering a therapeutically effective amount of a composition including a neoantigen vaccine including at least one pancreatic cancer-associated neoantigen and at least one immune checkpoint inhibitor. The methods and compositions of the present disclosure are particularly useful for inducing a neoantigen-specific CD4 or CD8 T cell response against a tumor.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式