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    • 11. 发明授权
    • Photoelectric converting apparatus with reduced electric power
comsumption
    • 具有降低功耗的光电转换装置
    • US5693932A
    • 1997-12-02
    • US527177
    • 1995-09-15
    • Isamu UenoMamoru Miyawaki
    • Isamu UenoMamoru Miyawaki
    • H01L31/10H04N5/335H04N5/341H04N5/369H04N5/374H04N5/378H01L27/00
    • H04N3/1512
    • To obtain a photoelectric converting apparatus of a small electric power consumption and a detecting method of a target object by using such an apparatus, the apparatus is first set to a low power source voltage mode, a reset and a transient reset are performed to a plurality of phototransistors as photoelectric converting devices and capacitors by pulses from terminals and a vertical shift register. After that, photoelectric conversion information is temporarily stored in capacitors and read out by a horizontal shift register. The read-out signal voltage is compared with a reference voltage by a comparator, thereby detecting the presence or absence of a reflection light. When the reflection light is detected, the apparatus is set to a high power source voltage mode and the reset and transient reset are again executed. After that information is read out from capacitors and is signal processed by an image processing circuit. Thus, the electric power consumption can be reduced.
    • 为了通过使用这种装置获得小功耗的光电转换装置和目标物体的检测方法,该装置首先被设置为低电源电压模式,复位和瞬态复位被执行到多个 的光电晶体管作为光电转换装置和电容器通过来自端子和垂直移位寄存器的脉冲。 之后,光电转换信息被暂时存储在电容器中并由水平移位寄存器读出。 通过比较器将读出的信号电压与参考电压进行比较,从而检测反射光的存在与否。 当检测到反射光时,将该设备设置为高电源电压模式,并且再次执行复位和瞬态复位。 之后,从电容器读出信息,并由图像处​​理电路进行信号处理。 因此,可以降低电力消耗。
    • 14. 发明授权
    • Solid-state image pickup device and control method thereof, and camera
    • 固态摄像装置及其控制方法及相机
    • US08089545B2
    • 2012-01-03
    • US12431831
    • 2009-04-29
    • Toru KoizumiAkira OkitaKatsuhito SakuraiIsamu Ueno
    • Toru KoizumiAkira OkitaKatsuhito SakuraiIsamu Ueno
    • H04N5/335
    • H04N5/369H04N5/3559H04N5/3592H04N5/37452
    • A solid-state image pickup device having a pixel includes a photoelectric conversion unit generating and accumulating charge by photoelectric conversion; a charge holding unit being shielded from light, and being adaptable to accumulate a part of charge spilling from the photoelectric conversion unit in a period during which the photoelectric conversion unit generates and accumulates charge; an amplifying unit (SF-MOS) amplifying charge; a first transfer unit (Tx-MOS) transferring the charge accumulated in the photoelectric conversion unit to the amplifying unit; and a second transfer unit (Ty-MOS) transferring the charge accumulated in the first charge holding unit to the amplifying unit. A part of charge spilling from the photoelectric conversion unit is caused to flow into the charge holding unit and thereby extend the dynamic range, and at the same time, improve image quality.
    • 具有像素的固体摄像装置包括通过光电转换产生并积累电荷的光电转换单元; 电荷保持单元被遮光,并且适于在光电转换单元产生并累积电荷的时段期间累积从光电转换单元溢出的电荷的一部分; 放大单元(SF-MOS)放大电荷; 将累积在光电转换单元中的电荷传送到放大单元的第一传送单元(Tx-MOS) 以及将在第一电荷保持单元中累积的电荷转移到放大单元的第二转印单元(Ty-MOS)。 使从光电转换单元溢出的电荷的一部分流入电荷保持单元,从而延长动态范围,同时提高图像质量。
    • 15. 发明申请
    • SOLID-STATE IMAGE PICKUP DEVICE AND CONTROL METHOD THEREOF, AND CAMERA
    • 固态图像拾取装置及其控制方法及相机
    • US20090213260A1
    • 2009-08-27
    • US12431831
    • 2009-04-29
    • TORU KOIZUMIAkira OkitaKatsuhito SakuraiIsamu Ueno
    • TORU KOIZUMIAkira OkitaKatsuhito SakuraiIsamu Ueno
    • H04N3/14
    • H04N5/369H04N5/3559H04N5/3592H04N5/37452
    • An object of the invention is to cause a part of charge spilling from a photoelectric conversion unit to flow into a charge holding unit and thereby extend dynamic range and at the same time improve image quality. There is provided a solid-state image pickup device having a pixel including: a photoelectric conversion unit generating and accumulating charge by means of photoelectric conversion; a first charge holding unit being shielded from light, and being adaptable to accumulate a part of charge spilling from the photoelectric conversion unit in a period during which the photoelectric conversion unit generates and accumulates charge; an amplifying unit (SF-MOS) amplifying charge; a first transfer unit (Tx-MOS) transferring the charge accumulated in the photoelectric conversion unit to the amplifying unit; and a second transfer unit (Ty-MOS) transferring the charge accumulated in the first charge holding unit to the amplifying unit.
    • 本发明的目的是使光电转换单元的一部分电荷溢出流入电荷保持单元,从而延长动态范围,同时提高图像质量。 提供一种具有像素的固体摄像装置,该像素包括:光电转换单元,通过光电转换产生和累积电荷; 第一电荷保持单元被遮光,并且适于在光电转换单元产生并累积电荷的时段期间累积从光电转换单元溢出的电荷的一部分; 放大单元(SF-MOS)放大电荷; 将累积在光电转换单元中的电荷传送到放大单元的第一传送单元(Tx-MOS) 以及将在第一电荷保持单元中累积的电荷转移到放大单元的第二转印单元(Ty-MOS)。
    • 16. 发明授权
    • Solid state image pickup device and manufacturing method therefor
    • 固态摄像装置及其制造方法
    • US07274394B2
    • 2007-09-25
    • US10622540
    • 2003-07-21
    • Toru KoizumiShigetoshi SugawaIsamu UenoTetsunobu KochiKatsuhito SakuraiHiroki Hiyama
    • Toru KoizumiShigetoshi SugawaIsamu UenoTetsunobu KochiKatsuhito SakuraiHiroki Hiyama
    • H04N3/14H01L21/336H01L31/062H01L27/00
    • H01L27/14806H01L27/14609H01L27/14643H01L27/14689H01L31/035281Y02E10/50
    • A method of manufacturing a MOS-type solid-state image pickup device having a photoelectric conversion unit, a transfer MOS transistor, a gate electrode disposed on an insulating film and a semiconductor substrate on which the photoelectric conversion unit and the transfer MOS transistor are disposed, includes a first step of forming a second semiconductor region by ion implanting an impurity of a second conductivity type at a first angle with a first energy using the gate electrode as a mask, and a second step of forming a fifth semiconductor region by ion implanting an impurity of the second conductivity type at a second angle with a second energy using the gate electrode as a mask. A fourth semiconductor region is formed by ion implanting an impurity of the second conductivity type. The second energy is smaller than the first energy, and the first and second angles are respectively angles to a direction normal to a surface of the semiconductor substrate, with the second angle being larger than the first angle, and the first and third steps being performed separately.
    • 一种制造具有光电转换单元,转移MOS晶体管,设置在绝缘膜上的栅极电极和设置有光电转换单元和转移MOS晶体管的半导体衬底的MOS型固体摄像器件的方法 包括通过使用栅电极作为掩模以第一角度以第一角度离子注入第二导电类型的杂质形成第二半导体区域的第一步骤,以及通过离子注入形成第五半导体区域的第二步骤 使用栅电极作为掩模,以第二能量以第二角度的第二导电类型的杂质。 通过离子注入第二导电类型的杂质形成第四半导体区域。 第二能量小于第一能量,并且第一和第二角度分别是与垂直于半导体衬底的表面的方向的角度,其中第二角度大于第一角度,并且执行第一和第三步骤 分别。
    • 19. 发明授权
    • Solid-state image pickup device
    • 固态图像拾取装置
    • US06657664B2
    • 2003-12-02
    • US08595173
    • 1996-02-01
    • Isamu Ueno
    • Isamu Ueno
    • H04N314
    • H04N5/3742H04N5/3692H04N5/374
    • A solid-state image pickup device is provided with plural blocks, each comprising at least two pixels, allowing reading of signals of pixel blocks at high speed without signal loss. The output signals of the blocks are connected in common, respectively through block buffers, thereby providing the maximum or minimum value of the pixels. Each block buffer has an input at the base of a self-biased transistor and an output in an emitter follower circuit. There also are provided first photoelectric conversion elements for reading out the photoelectric conversion charges of respective pixels and second photoelectric conversion elements for reading out the photoelectric conversion charges respectively in blocks, each composed of plural pixels, and the outputs of the second photoelectric conversion elements are connected in common to a common line through maximum output circuits.
    • 固态图像拾取装置设置有多个块,每个块包括至少两个像素,允许高速读取像素块的信号而没有信号丢失。 块的输出信号分别通过块缓冲器共同连接,从而提供像素的最大值或最小值。 每个块缓冲器具有在自偏置晶体管的基极处的输入和在射极跟随器电路中的输出。 还提供了用于读出各像素的光电转换电荷的第一光电转换元件和用于分别读出由多个像素组成的块的光电转换电荷的第二光电转换元件,并且第二光电转换元件的输出为 通过最大输出电路将共同连接到公共线路。
    • 20. 发明授权
    • Photoelectric conversion device
    • 光电转换装置
    • US06342920B2
    • 2002-01-29
    • US09407298
    • 1999-09-29
    • Isamu Ueno
    • Isamu Ueno
    • H04N5335
    • H04N5/37452H04N5/359H04N5/3592H04N5/374
    • This invention provides an element having a skimming charge transfer function in an X-Y address type photoelectric conversion device using, e.g., a CMOS sensor, and a photoelectric conversion device, which accumulates photoelectric signal charges produced by a photoelectric conversion element in a control electrode (gate) of a MOS transistor so as to obtain a signal with a high S/N ratio by removing signal components produced by background radiation without using any CCD as an accumulation means of skimming charges, has a skimming electrode for transferring skimming charges of those produced by the photoelectric conversion element, an n+-type region for accumulating the transferred skimming charges, a MOS transistor for reading out potential changes caused by the skimming charges, and a circuit for automatically controlling the amount of skimming charges to be transferred.
    • 本发明提供了一种在例如CMOS传感器的XY地址型光电转换装置中具有撇取电荷转移功能的元件和在控制电极(栅极)中积聚由光电转换元件产生的光电信号电荷的光电转换装置 ),以便通过除去由背景辐射产生的信号分量而不使用任何CCD作为撇取电荷的累积装置来获得具有高S / N比的信号,具有用于传送由撇号电极产生的撇去电荷的撇渣电极 光电转换元件,用于累积转移的撇号电荷的n +型区域,用于读出由撇取电荷引起的电位变化的MOS晶体管,以及用于自动控制要转移的撇取电荷量的电路。