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11. 发明申请

US20090114513A1 MICRO ELECTROMECHANICAL SYSTEM (MEMS) SWITCH 审中-公开
标题翻译：微机电系统（MEMS）开关
公开(公告)号：US20090114513A1
公开(公告)日：2009-05-07
申请号：US12102442
申请日：2008-04-14
申请人： Chul-soo Kim , Byeoung-ju Ha , In-sang Song , Duck-hwan Kim , Yun-kwon Park , Jea-shik Shin
发明人： Chul-soo Kim , Byeoung-ju Ha , In-sang Song , Duck-hwan Kim , Yun-kwon Park , Jea-shik Shin
IPC分类号： H01H57/00
CPC分类号： H01H59/0009 , H01H2059/0027
摘要： A Micro ElectroMechanical System (MEMS) switch is provided. The MEMS switch includes a ground, a moving unit moveable according to a driving signal, for connecting the input to the output or disconnecting the input from the output, and an electrode unit arranged in the configuration of a protrusion formed on a portion of the round, to induce a leakage signal generated between the input and the output to move toward the ground.
摘要翻译：提供微机电系统（MEMS）开关。 MEMS开关包括接地，可根据驱动信号移动的移动单元，用于将输入连接到输出或从输出端断开输入;以及电极单元，其布置成形成在圆的一部分上的突起的构造以引起在输入和输出之间产生的泄漏信号朝向地面移动。

12. 发明授权

US07253703B2 Air-gap type FBAR, method for fabricating the same, and filter and duplexer using the same 有权
标题翻译：气隙型FBAR，其制造方法，以及使用该FBAR的过滤器和双工器
公开(公告)号：US07253703B2
公开(公告)日：2007-08-07
申请号：US10959313
申请日：2004-10-07
申请人： In-sang Song , Yun-kwon Park , Byeoung-ju Ha , Jun-sik Hwang
发明人： In-sang Song , Yun-kwon Park , Byeoung-ju Ha , Jun-sik Hwang
IPC分类号： H03H9/54 , H03H9/70 , H03H9/10 , H03H9/15 , H03H3/02
CPC分类号： H03H9/587 , H03H3/02 , H03H9/105 , H03H9/173 , Y10T29/42
摘要： An air-gap type thin film bulk acoustic resonator (FBAR) and method for fabricating the same. Also disclosed are a filter and a duplexer employing the air-gap type FBAR. The air-gap type FBAR includes: a first substrate having a cavity part at a predetermined region on its upper surface; a dielectric film stacked on the upper part of the first substrate; a first air gap formed between the first substrate and the dielectric film; a stacked resonance part including a lower electrode/piezoelectric layer/upper electrode formed on the upper part of the dielectric film; a second substrate having a cavity part at a predetermined region on its lower surface and joined to the first substrate; and a second air gap formed between the stacked resonance part and the second substrate. A thin film of predetermined thickness made of a liquid crystal polymer (LCP) may be used as the dielectric film.
摘要翻译：气隙式薄膜体声波谐振器（FBAR）及其制造方法。还公开了采用气隙型FBAR的过滤器和双工器。气隙式FBAR包括：第一基板，其上表面上的预定区域具有空腔部分; 电介质膜，其堆叠在所述第一基板的上部; 在所述第一基板和所述电介质膜之间形成的第一气隙; 堆叠的共振部分，包括形成在电介质膜的上部的下电极/压电层/上电极; 第二基板，在其下表面上的预定区域具有空腔部分，并且与第一基板接合; 以及在所述层叠的共振部和所述第二基板之间形成的第二气隙。可以使用由液晶聚合物（LCP）制成的预定厚度的薄膜作为电介质膜。

13. 发明授权

US08720023B2 Method of manufacturing a monolithic duplexer 有权
标题翻译：制造单片双工器的方法
公开(公告)号：US08720023B2
公开(公告)日：2014-05-13
申请号：US12647188
申请日：2009-12-24
申请人： Yun-kwon Park , In-sang Song , Seok-chul Yun , Seog-woo Hong , Byeoung-ju Ha , Dong-ha Shim , Hae-seok Park , Kuang-woo Nam , Duck-hwan Kim
发明人： Yun-kwon Park , In-sang Song , Seok-chul Yun , Seog-woo Hong , Byeoung-ju Ha , Dong-ha Shim , Hae-seok Park , Kuang-woo Nam , Duck-hwan Kim
IPC分类号： H03H9/15 , H03H3/007
CPC分类号： H03H3/02 , H03H9/0571 , H03H9/706 , Y10T29/42 , Y10T29/43 , Y10T29/4902 , Y10T29/49155
摘要： A method for fabricating subminiature, high-performance monolithic duplexer is disclosed. The method comprises depositing and patterning a lower electrode on an upper surface of an insulation layer on a substrate, so as to expose a first part of the insulation layer; depositing a piezoelectric layer on an upper surface of the exposed insulation layer and the lower electrode; depositing a metal on the upper part of the piezoelectric layer and patterning the metal to form a resonance part and a trimming inductor, wherein the lower electrode electrically couples the resonance part and the trimming inductor; fabricating air gap type FBARs (film bulk acoustic resonances) by forming a cavity by etching the substrate under the resonance part; and bonding a packaging substrate on the substrate, the packaging substrate having a phase shifting part which substantially prevents inflow of signal between the air gap type FBARs.
摘要翻译：公开了一种用于制造超小型高性能单片双工器的方法。该方法包括在基板上的绝缘层的上表面上沉积和图案化下电极，以暴露绝缘层的第一部分; 在暴露的绝缘层和下电极的上表面上沉积压电层; 在所述压电层的上部沉积金属并图案化所述金属以形成谐振部分和微调电感器，其中所述下部电极电耦合所述谐振部分和所述微调电感器; 通过在谐振部分下蚀刻衬底来形成空腔来制造气隙型FBAR（膜体声共振）; 以及将封装基板接合在所述基板上，所述封装基板具有基本上防止所述气隙型FBAR之间的信号流入的相移部。

14. 发明授权

US07233218B2 Air-gap type FBAR, and duplexer using the FBAR 失效
标题翻译：气隙式FBAR和双工器使用FBAR
公开(公告)号：US07233218B2
公开(公告)日：2007-06-19
申请号：US11429256
申请日：2006-05-08
申请人： Yun-kwon Park , In-sang Song , Byeoung-ju Ha , Il-jong Song , Duck-hwan Kim
发明人： Yun-kwon Park , In-sang Song , Byeoung-ju Ha , Il-jong Song , Duck-hwan Kim
IPC分类号： H03H9/70 , H03H9/15 , H03H9/10 , H03H9/54
CPC分类号： H03H9/173 , H03H3/02 , H03H9/02133 , H03H9/0571 , H03H9/587 , H03H9/706 , Y10T29/42
摘要： An air-gap type film bulk acoustic resonator (FBAR) is created by securing two substrate parts, one providing a resonance structure and the other providing a separation structure, i.e., a cavity. When the two substrate parts are secured, the resonance structure is over the cavity, forming an air gap isolating the resonant structure from the support substrate. The FBAR may be used to form a duplexer, which includes a plurality of resonance structures, a corresponding plurality of cavities, and an isolation part formed between the cavities. The separate creation of the resonance structures and the cavities both simplifies processing and allows additional elements to be readily integrated in the cavities.
摘要翻译：通过固定两个基板部分，一个提供谐振结构，另一个提供分离结构，即空腔，形成气隙型膜体声波谐振器（FBAR）。当固定两个基板部分时，谐振结构在空腔之上，形成将谐振结构与支撑基板隔离的气隙。 FBAR可以用于形成双工器，其包括多个谐振结构，相应的多个空腔和形成在腔之间的隔离部分。谐振结构和空腔的独立创建既简化了处理，并允许额外的元件容易地集成在空腔中。

15. 发明授权

US07053730B2 Fabricating methods for air-gap type FBARs and duplexers including securing a resonating part substrate to a cavity forming substrate 有权
标题翻译：气隙式FBAR和双工器的制造方法，包括将谐振部分基板固定到腔形成基板
公开(公告)号：US07053730B2
公开(公告)日：2006-05-30
申请号：US10825608
申请日：2004-04-16
申请人： Yun-kwon Park , In-sang Song , Byeoung-ju Ha , Il-jong Song , Duck-hwan Kim
发明人： Yun-kwon Park , In-sang Song , Byeoung-ju Ha , Il-jong Song , Duck-hwan Kim
IPC分类号： H03H9/70 , H03H3/007 , H03H9/10
CPC分类号： H03H9/173 , H03H3/02 , H03H9/02133 , H03H9/0571 , H03H9/587 , H03H9/706 , Y10T29/42
摘要： An air-gap type film bulk acoustic resonator (FBAR) is created by securing two substrate parts, one providing a resonance structure and the other providing a separation structure, i.e., a cavity. When the two substrate parts are secured, the resonance structure is over the cavity, forming an air gap isolating the resonant structure from the support substrate. The FBAR may be used to form a duplexer, which includes a plurality of resonance structures, a corresponding plurality of cavities, and an isolation part formed between the cavities. The separate creation of the resonance structures and the cavities both simplifies processing and allows additional elements to be readily integrated in the cavities.
摘要翻译：通过固定两个基板部分，一个提供谐振结构，另一个提供分离结构，即空腔，形成气隙型膜体声波谐振器（FBAR）。当固定两个基板部分时，谐振结构在空腔之上，形成将谐振结构与支撑基板隔离的气隙。 FBAR可以用于形成双工器，其包括多个谐振结构，相应的多个空腔和形成在腔之间的隔离部分。谐振结构和空腔的独立创建既简化了处理，并允许额外的元件容易地集成在空腔中。

16. 发明申请

US20050134401A1 Duplexer fabricated with monolithic FBAR and isolation part and a method thereof 有权
标题翻译：用单片FBAR和隔离部分制造的双工器及其方法
公开(公告)号：US20050134401A1
公开(公告)日：2005-06-23
申请号：US10989403
申请日：2004-11-17
申请人： In-sang Song , Byeoung-ju Ha , Yun-kwon Park , Kuang-woo Nam , Dong-ha Shim
发明人： In-sang Song , Byeoung-ju Ha , Yun-kwon Park , Kuang-woo Nam , Dong-ha Shim
IPC分类号： B81B3/00 , B81C1/00 , H01L41/09 , H01L41/18 , H01L41/187 , H01L41/22 , H01L41/311 , H03H3/02 , H03H9/17 , H03H9/56 , H03H9/70
CPC分类号： H03H9/173 , H03H9/0571 , H03H9/564 , H03H9/706 , Y10T29/42
摘要： A duplexer having a filter and an isolation part which are integrally formed including a substrate, a transmitter filter integrated on the substrate to pass signals only in a frequency band for transmission, a receiver filter integrated on the substrate to pass signals only in a frequency band for reception, and an isolation part integrally formed with either one of the transmitter filter and the receiver filter to isolate the signals passed through the transmitter filter and the receiver filter from each other. Since the isolation part is integrally formed with either one of the transmitter filter and the receiver filter, the duplexer can be manufactured in a small size by simplified processes.
摘要翻译：一种具有滤波器和隔离部分的双工器，其一体形成包括基板，集成在基板上的发射器滤波器，仅在用于传输的频带中传递信号;集成在基板上的接收滤波器，以仅在频带中传递信号以及与发射机滤波器和接收机滤波器中的任一个整体形成的隔离部分，以将通过发射机滤波器和接收机滤波器的信号彼此隔离。由于隔离部分与发射器滤波器和接收器滤波器中的任一个整体形成，所以可以通过简化的处理将双工器制造成小尺寸。

17. 发明申请

US20100107387A1 Bulk acoustic wave resonator, filter and duplexer and methods of making same 审中-公开
标题翻译：体声波谐振器，滤波器和双工器及其制造方法
公开(公告)号：US20100107387A1
公开(公告)日：2010-05-06
申请号：US12588697
申请日：2009-10-23
申请人： In-sang Song , Byeoung-ju Ha , Duck-hwan Kim , Yun-kwon Park
发明人： In-sang Song , Byeoung-ju Ha , Duck-hwan Kim , Yun-kwon Park
IPC分类号： H01L41/22
CPC分类号： H03H3/02 , H03H9/02149 , H03H9/105 , H03H9/173 , H03H9/174 , H03H2003/021 , H03H2003/023 , Y10T29/42
摘要： A resonator having a membrane formed of a piezoelectric layer sandwiched between first and second electrode is suspended above a cavity formed from the back surface of the support structure. In one embodiment, the cavity walls are substantially perpendicular to the back surface. In another embodiment, the first electrode is formed in the cavity such that it is electrically connected to an electrode on the back surface of the support structure. In yet another embodiment, the cavity is formed via an etch through via holes in the back surface of the support structure, which leads to greater flexibility in designing a method of manufacture while reducing the need for alignment relative to other designs.
摘要翻译：具有由夹在第一和第二电极之间的压电层形成的膜的谐振器悬挂在从支撑结构的后表面形成的空腔的上方。在一个实施例中，空腔壁基本上垂直于后表面。在另一个实施例中，第一电极形成在空腔中，使得其与支撑结构的背面上的电极电连接。在另一个实施例中，通过蚀刻穿过支撑结构的后表面中的通孔形成空腔，这导致在设计制造方法时更大的灵活性，同时减少了对相对于其他设计的对准的需要。

18. 发明申请

US20060214745A1 Air-gap type FBAR, and duplexer using the FBAR 失效
标题翻译：气隙式FBAR和双工器使用FBAR
公开(公告)号：US20060214745A1
公开(公告)日：2006-09-28
申请号：US11429256
申请日：2006-05-08
申请人： Yun-kwon Park , In-sang Song , Byeoung-ju Ha , Il-jong Song , Duck-hwan Kim
发明人： Yun-kwon Park , In-sang Song , Byeoung-ju Ha , Il-jong Song , Duck-hwan Kim
IPC分类号： H03H9/70 , H03H9/58
CPC分类号： H03H9/173 , H03H3/02 , H03H9/02133 , H03H9/0571 , H03H9/587 , H03H9/706 , Y10T29/42
摘要： An air-gap type film bulk acoustic resonator (FBAR) is created by securing two substrate parts, one providing a resonance structure and the other providing a separation structure, i.e., a cavity. When the two substrate parts are secured, the resonance structure is over the cavity, forming an air gap isolating the resonant structure from the support substrate. The FBAR may be used to form a duplexer, which includes a plurality of resonance structures, a corresponding plurality of cavities, and an isolation part formed between the cavities. The separate creation of the resonance structures and the cavities both simplifies processing and allows additional elements to be readily integrated in the cavities.
摘要翻译：通过固定两个基板部分，一个提供谐振结构，另一个提供分离结构，即空腔，形成气隙型膜体声波谐振器（FBAR）。当固定两个基板部分时，谐振结构在空腔之上，形成将谐振结构与支撑基板隔离的气隙。 FBAR可以用于形成双工器，其包括多个谐振结构，相应的多个空腔和形成在腔之间的隔离部分。谐振结构和空腔的独立创建既简化了处理，并允许额外的元件容易地集成在空腔中。

19. 发明授权

US07095298B2 Film bulk acoustic resonator having supports and manufacturing method therefore 有权
标题翻译：因此，具有支撑体和制造方法的膜体声谐振器
公开(公告)号：US07095298B2
公开(公告)日：2006-08-22
申请号：US10854793
申请日：2004-05-27
申请人： Il-jong Song , Duck-hwan Kim , In-sang Song , Yun-kwon Park , Byeoung-ju Ha
发明人： Il-jong Song , Duck-hwan Kim , In-sang Song , Yun-kwon Park , Byeoung-ju Ha
IPC分类号： H03H9/54 , H03H3/02
CPC分类号： H03H9/172 , H03H3/02 , H03H9/0514 , H03H9/0547 , Y10T29/42
摘要： A film bulk acoustic resonator (FBAR) has a support structure, a piezoelectric resonator, and a signal line that is electrically connected, e.g., through a via, to the piezoelectric resonator, all on a semiconductor substrate. Support(s) and/or the via mount the piezoelectric resonator at a predetermined distance from the semiconductor substrate, allowing an ideal shape of the resonator to be realized. The signal line may include a patterned inductor. A capacitor can be formed between the via and the signal line. The resonance characteristics can be enhanced since the substrate loss caused by the driving of the resonator can be prevented due to an air gap formed by the predetermined distance. The resonance frequency can be adjusted by altering the pattern of the inductor, the capacitance of the capacitor and/or the thickness of the piezoelectric layer, also allowing Impedance matching to be readily realized.
摘要翻译：薄膜体声波谐振器（FBAR）具有支撑结构，压电谐振器和信号线，其全部在半导体衬底上，例如通过通孔电连接到压电谐振器。支撑件和/或通孔将压电谐振器安装在离半导体衬底预定距离处，从而实现谐振器的理想形状。信号线可以包括图案化电感器。可以在通孔和信号线之间形成电容器。由于由于由预定距离形成的气隙可以防止由共振器的驱动引起的衬底损耗，所以可以提高谐振特性。可以通过改变电感器的图案，电容器的电容和/或压电层的厚度来调节谐振频率，并且可以容易地实现阻抗匹配。

20. 发明申请

US20060109065A1 Monolithic duplexer 有权
标题翻译：单片双工器
公开(公告)号：US20060109065A1
公开(公告)日：2006-05-25
申请号：US11262889
申请日：2005-11-01
申请人： Yun-kwon Park , In-sang Song , Seok-chul Yun , Seog-woo Hong , Byeoung-ju Ha , Dong-ha Shim , Hae-seok Park , Kuang-woo Nam , Duck-hwan Kim
发明人： Yun-kwon Park , In-sang Song , Seok-chul Yun , Seog-woo Hong , Byeoung-ju Ha , Dong-ha Shim , Hae-seok Park , Kuang-woo Nam , Duck-hwan Kim
IPC分类号： H03H9/70
CPC分类号： H03H3/02 , H03H9/0571 , H03H9/706 , Y10T29/42 , Y10T29/43 , Y10T29/4902 , Y10T29/49155
摘要： A subminiature, high-performance monolithic duplexer is disclosed. The monolithic duplexer includes a substrate, a transmitting-end filter formed in a first area on an upper surface of the substrate, a receiving-end filter formed in a second area on the upper surface of the substrate, a packaging substrate, bonded on an area on the upper surface of the substrate, for packaging the transmitting-end filter and the receiving-end filter in a sealed state, and a phase shifter, formed on one surface of the packaging substrate and connected to the transmitting-end filter and the receiving-end filter, respectively, for intercepting a signal inflow between the transmitting-end filter and the receiving-end filter.
摘要翻译：公开了一种超小型高性能单片双工器。单片双工器包括基板，形成在基板的上表面上的第一区域中的透射端滤光器，形成在基板的上表面上的第二区域中的接收端滤光器，粘合在基板上的封装基板在封装状态下将发送端滤波器和接收端滤波器封装在基板的上表面上的区域，以及形成在封装基板的一个表面上并与发送端滤波器连接的移相器接收端滤波器分别用于截取发送端滤波器与接收端滤波器之间的信号流入。

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