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11. 发明专利

JP2013243391A Multistate nonvolatile memory element 审中-公开
标题翻译：多媒体非易失性存储元件
公开(公告)号：JP2013243391A
公开(公告)日：2013-12-05
申请号：JP2013153348
申请日：2013-07-24
申请人： Intermolecular Inc , インターモレキュラー, インコーポレイテッド
发明人： CHIANG TONY
IPC分类号： H01L27/105 , H01L45/00 , H01L49/00
CPC分类号： H01L45/146 , G11C11/5685 , G11C13/0007 , G11C2213/32 , G11C2213/72 , G11C2213/77 , G11C2213/79
摘要： PROBLEM TO BE SOLVED: To provide a multistate nonvolatile memory element.SOLUTION: A multistate nonvolatile memory element 12 includes a plurality of layers. Each layer may be based on a different bistable material. The bistable material may be a resistive switching material such as a resistive switching metal oxide. Depending on the selection, conductor layers 23 and current steering elements may be connected in series with the bistable resistive switching metal oxide layers. Each resistive switching layer 22-1, 22-2, 22-3 may have an associated high resistance state and an associated low resistance state. The state of each resistive switching layer may be controlled by applying proper control voltage. The resistive switching layer may be shifted from the high resistance state to the low resistance state by adding set voltage. Reset voltage may be applied for recovering the resistive switching layer to the low resistance state. The reset voltage may have the same polarity as or the opposite polarity to the set voltage.
摘要翻译：要解决的问题：提供多态非易失性存储元件。解决方案：多态非易失性存储元件12包括多个层。每个层可以基于不同的双稳态材料。双稳态材料可以是电阻式开关材料，例如电阻式开关金属氧化物。根据选择，导体层23和电流导向元件可以与双稳电阻开关金属氧化物层串联连接。每个电阻开关层22-1,22-2,22-3可以具有相关联的高电阻状态和相关联的低电阻状态。可以通过施加适当的控制电压来控制每个电阻式开关层的状态。电阻开关层可以通过加设定电压而从高电阻状态转移到低电阻状态。可以施加复位电压以将电阻开关层恢复到低电阻状态。复位电压可能具有与设定电压相同的极性或相反的极性。

12. 发明申请

WO2009135072A2 NON-VOLATILE RESISTIVE-SWITCHING MEMORIES 审中-公开
标题翻译：非易失性电阻开关存储器
公开(公告)号：WO2009135072A2
公开(公告)日：2009-11-05
申请号：PCT/US2009042424
申请日：2009-04-30
申请人： INTEMOLECULAR INC , PHATAK PRASHANT , CHIANG TONY , KUMAR PRAGATI , MILLER MICHAEL
发明人： PHATAK PRASHANT , CHIANG TONY , KUMAR PRAGATI , MILLER MICHAEL
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： H01L45/146 , G11C13/0007 , G11C2213/32 , G11C2213/55 , G11C2213/72 , H01L27/2409 , H01L27/2463 , H01L29/8615 , H01L45/08 , H01L45/10 , H01L45/122 , H01L45/1233 , H01L45/1253 , H01L45/1616 , H01L45/1625 , H01L45/1641 , H01L45/165 , H01L45/1658 , H01L47/00
摘要： Non- volatile resistive-switching memories are described, including a memory element having a first electrode, a second electrode, a metal oxide between the first electrode and the second electrode. The metal oxide switches using bulk-mediated switching, has a bandgap greater than 4 electron volts (eV), has a set voltage for a set operation of at least one volt per one hundred angstroms of a thickness of the metal oxide, and has a leakage current density less than 40 amps per square centimeter (A/cm2) measured at 0.5 volts (V) per twenty angstroms of the thickness of the metal oxide.
摘要翻译：描述了非易失性电阻式切换存储器，包括在第一电极和第二电极之间具有第一电极，第二电极，金属氧化物的存储元件。使用大容量介导的开关的金属氧化物开关具有大于4电子伏特（eV）的带隙，具有用于金属氧化物的厚度每100埃至少一伏特的设定操作的设定电压，并且具有泄漏电流密度小于每平方厘米40安培（A / cm2），以每伏特金属氧化物厚度每20埃0.5伏（V）测得。

13. 发明申请

WO9854377A3 STRESS TUNABLE TANTALUM AND TANTALUM NITRIDE FILMS 审中-公开
标题翻译：应力TANTALUM和氮化钛薄膜
公开(公告)号：WO9854377A3
公开(公告)日：1999-03-11
申请号：PCT/US9810789
申请日：1998-05-27
申请人： APPLIED MATERIALS INC , CHIANG TONY , DING PEIJUN , CHIN BARRY L , SUN BINGXI
发明人： CHIANG TONY , DING PEIJUN , CHIN BARRY L , SUN BINGXI
IPC分类号： C23C14/00 , C23C14/06 , C23C14/14 , C23C14/16 , C23C14/34 , C23C14/35 , C23C14/58 , H01L21/285 , H01L21/768 , H01L23/532
CPC分类号： C23C14/345 , C23C14/0036 , C23C14/0641 , C23C14/16 , C23C14/3492 , C23C14/358 , C23C14/5833 , H01L21/2855 , H01L21/76838 , H01L21/76841 , H01L21/76843 , H01L21/76862 , H01L21/76864 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： We have discovered that the residual stress residing in a tantalum (Ta) film or a tantalum nitride (TaNx, where 0

14. 发明公开

EP2174344A4 SURFACE MODIFICATION OF LOW-K DIELECTRIC MATERIALS 审中-公开
标题翻译：低k介电材料的表面改性
公开(公告)号：EP2174344A4
公开(公告)日：2012-06-20
申请号：EP08781743
申请日：2008-07-11
申请人： INTERMOLECULAR INC
发明人： FRESCO ZACHARY M , LANG CHI-I , TONG JINHONG , DUONG ANH , KUMAR NITIN , TSIMELZON ANNA , CHIANG TONY
IPC分类号： H01L21/02 , H01L21/3105 , H01L21/768
CPC分类号： H01L23/5329 , C09D129/04 , H01L21/02063 , H01L21/02074 , H01L21/3105 , H01L21/31058 , H01L21/76814 , H01L21/7682 , H01L21/76826 , H01L21/76829 , H01L2221/1063 , H01L2924/0002 , H01L2924/00
摘要： Methods of modifying a patterned semiconductor substrate are presented including: providing a patterned semiconductor substrate surface including a dielectric region and a conductive region; and applying an amphiphilic surface modifier to the dielectric region to modify the dielectric region. In some embodiments, modifying the dielectric region includes modifying a wetting angle of the dielectric region. In some embodiments, modifying the wetting angle includes making a surface of the dielectric region hydrophilic. In some embodiments, methods further include applying an aqueous solution to the patterned semiconductor substrate surface. In some embodiments, the conductive region is selectively enhanced by the aqueous solution. In some embodiments, methods further include providing the dielectric region formed of a low-k dielectric material. In some embodiments, applying the amphiphilic surface modifier modifies an interaction of the low-k dielectric region with a subsequent process.

15. 发明公开

EP2279518A4 COMBINATORIAL PLASMA ENHANCED DEPOSITION TECHNIQUES 审中-公开
标题翻译：组合式等离子体增强沉积技术
公开(公告)号：EP2279518A4
公开(公告)日：2013-08-21
申请号：EP09739984
申请日：2009-05-01
申请人： INTERMOLECULAR INC
发明人： SHANKER SUNIL , CHIANG TONY
IPC分类号： H01L21/205 , C23C16/04 , C23C16/455 , C23C16/509 , H01J37/32
CPC分类号： C23C16/047 , C23C16/04 , C23C16/45536 , C23C16/45551 , C23C16/45565 , C23C16/45574 , C23C16/45591 , C23C16/4583 , C23C16/46 , C23C16/50 , C23C16/5096 , C23C16/52 , H01J37/32357 , H01J37/32366

16. 发明公开

EP2286454A4 NON-VOLATILE RESISTIVE-SWITCHING MEMORIES 有权
标题翻译：与电阻电路不挥发存储器
公开(公告)号：EP2286454A4
公开(公告)日：2013-02-20
申请号：EP09739874
申请日：2009-04-30
申请人： INTERMOLECULAR INC
发明人： PHATAK PRASHANT , CHIANG TONY , KUMAR PRAGATI , MILLER MICHAEL
IPC分类号： H01L45/00
CPC分类号： H01L45/146 , G11C13/0007 , G11C2213/32 , G11C2213/55 , G11C2213/72 , H01L27/2409 , H01L27/2463 , H01L29/8615 , H01L45/08 , H01L45/10 , H01L45/122 , H01L45/1233 , H01L45/1253 , H01L45/1616 , H01L45/1625 , H01L45/1641 , H01L45/165 , H01L45/1658 , H01L47/00
摘要： Non-volatile resistive-switching memories are described, including a memory element having a first electrode, a second electrode, a metal oxide between the first electrode and the second electrode. The metal oxide switches using bulk-mediated switching, has a bandgap greater than 4 electron volts (eV), has a set voltage for a set operation of at least one volt per one hundred angstroms of a thickness of the metal oxide, and has a leakage current density less than 40 amps per square centimeter (A/cm2) measured at 0.5 volts (V) per twenty angstroms of the thickness of the metal oxide.

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