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11. 发明申请

US20120086678A1 WIRE, METHOD OF MANUFACTURE, AND RELATED APPARATUS 有权
标题翻译：电线，制造方法和相关装置
公开(公告)号：US20120086678A1
公开(公告)日：2012-04-12
申请号：US13163528
申请日：2011-06-17
申请人： Chong Sup CHANG , Yoonho Khang , Changoh Jeong , Sehwan Yu , Sangho Park , Su-Hyoung Kang , Hyungjun Kim , Honglong Ning , Jinho Hwang , Myounggeun Cha , Youngki Shin
发明人： Chong Sup CHANG , Yoonho Khang , Changoh Jeong , Sehwan Yu , Sangho Park , Su-Hyoung Kang , Hyungjun Kim , Honglong Ning , Jinho Hwang , Myounggeun Cha , Youngki Shin
IPC分类号： G09G5/00 , H05K3/10
CPC分类号： G02F1/136286 , G02F2001/136236 , G02F2001/136295 , G02F2201/123 , Y10T29/49155
摘要： A wire is provided on an insulating substrate to have a first thickness in a first area and a second thickness smaller than the first thickness in a second area except for the first area. A display apparatus includes the wire. The wire is formed by forming a first conductive layer and a second conductive layer on the insulating substrate and etching the first and second conductive layers using photoresist layer patterns having different thicknesses.
摘要翻译：在除了第一区域之外的第二区域中，在绝缘基板上设置有具有在第一区域中的第一厚度和小于第一厚度的第二厚度的布线。显示装置包括线。通过在绝缘基板上形成第一导电层和第二导电层并使用具有不同厚度的光致抗蚀剂层图案蚀刻第一和第二导电层来形成导线。

12. 发明申请

US20100055442A1 METHOD OF PE-ALD OF SiNxCy AND INTEGRATION OF LINER MATERIALS ON POROUS LOW K SUBSTRATES 审中-公开
标题翻译： SiNxCy的PE-AlD方法和多孔低K基体上衬层材料的整合
公开(公告)号：US20100055442A1
公开(公告)日：2010-03-04
申请号：US12203338
申请日：2008-09-03
申请人： Andrew J. Kellock , Hyungjun Kim , Dae-Gyu Park , Satyanarayana V. Nitta , Sampath Purushothaman , Stephen Rossnagel , Oscar Van Der Straten
发明人： Andrew J. Kellock , Hyungjun Kim , Dae-Gyu Park , Satyanarayana V. Nitta , Sampath Purushothaman , Stephen Rossnagel , Oscar Van Der Straten
IPC分类号： C23C16/513 , B32B3/26
CPC分类号： C23C16/45536 , C23C16/36 , H01L21/02126 , H01L21/02167 , H01L21/0217 , H01L21/022 , H01L21/02203 , H01L21/02219 , H01L21/02274 , H01L21/0228 , H01L21/02315 , H01L21/3141 , H01L21/3148 , H01L21/31695 , H01L21/3185 , H01L21/76826 , H01L21/76831 , Y10T428/24999
摘要： A method of depositing a SiNxCy liner on a porous low thermal conductivity (low-k) substrate by plasma-enhanced atomic layer deposition (PE-ALD), which includes forming a SiNxCy liner on a surface of a low-k substrate having pores on a surface thereon, in which the low-k substrate is repeatedly exposed to a aminosilane-based precursor and a plasma selected from nitrogen, hydrogen, oxygen, helium, and combinations thereof until a thickness of the liner is obtained, and wherein the liner is prevented from penetrating inside the pores of a surface of the substrate. A porous low thermal conductivity substrate having a SiNxCy liner formed thereon by the method is also disclosed.
摘要翻译：一种通过等离子体增强原子层沉积（PE-ALD）在多孔低热导率（低k）衬底上沉积SiNxCy衬垫的方法，其包括在具有孔的低k衬底的表面上形成SiN xCy衬垫其中低k衬底反复暴露于基于氨基硅烷的前体和选自氮，氢，氧，氦及其组合的等离子体，直到获得衬垫的厚度，并且其中衬垫是防止在基板的表面的孔内渗透。还公开了通过该方法在其上形成SiN xCy衬垫的多孔低热导率衬底。

13. 发明申请

US20080166870A1 Fabrication of Interconnect Structures 审中-公开
标题翻译：互连结构的制造
公开(公告)号：US20080166870A1
公开(公告)日：2008-07-10
申请号：US11570014
申请日：2005-05-23
申请人： Elbert Emin Huang , Hyungjun Kim , Robert Dennis Miller , Satyanarayana Venkata Nitta , Sampath Purushothaman
发明人： Elbert Emin Huang , Hyungjun Kim , Robert Dennis Miller , Satyanarayana Venkata Nitta , Sampath Purushothaman
IPC分类号： H01L21/768
CPC分类号： H01L21/76808 , H01L21/0217 , H01L21/0228 , H01L21/02282 , H01L21/3121 , H01L21/3125 , H01L21/3141 , H01L21/31608 , H01L21/31629 , H01L21/31695 , H01L21/76814 , H01L21/76834 , H01L21/76837 , H01L23/5222 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Interconnect structures are fabricated by methods that comprise depositing a thin conformal passivation dielectric and/or diffusion barrier cap and/or hard mask by an atomic layer deposition or supercritical fluid based process.
摘要翻译：通过包括通过原子层沉积或基于超临界流体的方法沉积薄的共形钝化介质和/或扩散阻挡盖和/或硬掩模的方法来制造互连结构。

14. 发明申请

US20060003557A1 Atomic layer deposition metallic contacts, gates and diffusion barriers 有权
标题翻译：原子层沉积金属触点，栅极和扩散屏障
公开(公告)号：US20060003557A1
公开(公告)日：2006-01-05
申请号：US11214211
申请日：2005-08-29
申请人： Cyril Cabral , Hyungjun Kim , Stephen Rossnagel
发明人： Cyril Cabral , Hyungjun Kim , Stephen Rossnagel
IPC分类号： H01L21/20 , H01L21/4763 , H01L21/44
CPC分类号： H01L21/28088 , H01L21/28562 , H01L21/32053 , H01L21/76841 , H01L29/4966 , H01L2221/1078
摘要： The present invention provides metallic films containing a Group IVB or VB metal, silicon and optionally nitrogen by utilizing atomic layer deposition (ALD). In particularly, the present invention provides a low temperature thermal ALD method of forming metallic silicides and a plasma-enhanced atomic layer deposition (PE-ALD) method of forming metallic silicon nitride film. The methods of the present invention are capable of forming metallic films having a thickness of a monolayer or less on the surface of a substrate. The metallic films provided in the present invention can be used for contact metallization, metal gates or as a diffusion barrier.
摘要翻译：本发明通过利用原子层沉积（ALD）提供含有IVB族或VB族金属，硅和任选的氮的金属膜。特别地，本发明提供形成金属硅化物的低温热ALD方法和形成金属氮化硅膜的等离子体增强原子层沉积（PE-ALD）方法。本发明的方法能够在基材的表面上形成厚度为单层或更薄的金属膜。本发明中提供的金属膜可用于接触金属化，金属栅极或扩散阻挡层。

15. 发明申请

US20050280099A1 TEMPERATURE STABLE METAL NITRIDE GATE ELECTRODE 有权
标题翻译：温度稳定的金属硝酸盐电极
公开(公告)号：US20050280099A1
公开(公告)日：2005-12-22
申请号：US10710063
申请日：2004-06-16
申请人： Dae-Gyu Park , Cyril Cabral , Oleg Gluschenkov , Hyungjun Kim
发明人： Dae-Gyu Park , Cyril Cabral , Oleg Gluschenkov , Hyungjun Kim
IPC分类号： H01L21/8238 , H01L29/76
CPC分类号： H01L21/823842 , H01L21/823857 , Y10S257/90 , Y10S438/942
摘要： An integrated circuit is provided including an FET gate structure formed on a substrate. This structure includes a gate dielectric on the substrate, and a metal nitride layer overlying the gate dielectric and in contact therewith. This metal nitride layer is characterized as MNx, where M is one of W, Re, Zr, and Hf, and x is in the range of about 0.7 to about 1.5. Preferably the layer is of WNx, and x is about 0.9. Varying the nitrogen concentration in the nitride layer permits integration of different FET characteristics on the same chip. In particular, varying x in the WNx layer permits adjustment of the threshold voltage in the different FETs. The polysilicon depletion effect is substantially reduced, and the gate structure can be made thermally stable up to about 1000° C.
摘要翻译：提供了一种集成电路，其包括形成在衬底上的FET栅极结构。该结构包括衬底上的栅极电介质和覆盖栅极电介质并与其接触的金属氮化物层。该金属氮化物层的特征在于MN x，其中M是W，Re，Zr和Hf之一，x在约0.7至约1.5的范围内。优选地，该层为W N x X，x为约0.9。改变氮化物层中的氮浓度允许在同一芯片上集成不同的FET特性。特别地，在WN 层中改变x允许调节不同FET中的阈值电压。多晶硅耗尽效应显着降低，并且栅极结构可以在高达约1000℃下热稳定。

16. 发明申请

US20050095443A1 Plasma enhanced ALD of tantalum nitride and bilayer 有权
标题翻译：氮化钽和双层的等离子体增强ALD
公开(公告)号：US20050095443A1
公开(公告)日：2005-05-05
申请号：US10699226
申请日：2003-10-31
申请人： Hyungjun Kim , Andrew Kellock , Stephen Rossnagel
发明人： Hyungjun Kim , Andrew Kellock , Stephen Rossnagel
IPC分类号： C23C16/50 , B32B9/00 , C23C16/08 , C23C16/34 , C23C16/46 , C23C28/00 , H01L21/205 , H01L21/28 , H01L21/283 , H01L21/285 , H01L21/314 , H01L21/768 , H01L23/52
CPC分类号： C23C16/45542 , C23C16/34 , C23C16/45525 , H01L21/28562 , H01L21/76843
摘要： A method to deposit TaN by plasma enhanced layer with various nitrogen content. Using a mixture of hydrogen and nitrogen plasma, the nitrogen content in the film can be controlled from 0 to N/Ta=1.7. By turning off the nitrogen flow during deposition of TaN, a TaN/Ta bilayer is easily grown, which has copper diffusion barrier properties superior to those of a single Ta layer or a single TaN layer.
摘要翻译：一种用各种氮含量的等离子体增强层沉积TaN的方法。使用氢和氮等离子体的混合物，膜中的氮含量可以从0到N / Ta = 1.7。通过在TaN沉积期间关闭氮气流，容易生长TaN / Ta双层，其具有优于单个Ta层或单个TaN层的铜扩散阻挡性能。

17. 发明申请

US20050042865A1 Atomic layer deposition of metallic contacts, gates and diffusion barriers 有权
公开(公告)号：US20050042865A1
公开(公告)日：2005-02-24
申请号：US10643534
申请日：2003-08-19
申请人： Cyril Cabral , Hyungjun Kim , Stephen Rossnagel
发明人： Cyril Cabral , Hyungjun Kim , Stephen Rossnagel
IPC分类号： H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L29/49 , H01L21/425 , H01L21/44
CPC分类号： H01L21/28088 , H01L21/28562 , H01L21/32053 , H01L21/76841 , H01L29/4966 , H01L2221/1078
摘要： The present invention provides metallic films containing a Group IVB or VB metal, silicon and optionally nitrogen by utilizing atomic layer deposition (ALD). In particularly, the present invention provides a low temperature thermal ALD method of forming metallic silicides and a plasma-enhanced atomic layer deposition (PE-ALD) method of forming metallic silicon nitride film. The methods of the present invention are capable of forming metallic films having a thickness of a monolayer or less on the surface of a substrate. The metallic films provided in the present invention can be used for contact metallization, metal gates or as a diffusion barrier.

18. 发明授权

US09217408B2 Ventilating condition determine method of idle stop and go function 有权
标题翻译：通风条件确定怠速停止功能的方法
公开(公告)号：US09217408B2
公开(公告)日：2015-12-22
申请号：US13291694
申请日：2011-11-08
申请人： Jiyong Yu , Chongah Gwon , Junghwan Bang , Hyungjun Kim
发明人： Jiyong Yu , Chongah Gwon , Junghwan Bang , Hyungjun Kim
IPC分类号： B60H1/00 , F02N11/08
CPC分类号： F02N11/084 , B60H1/00778 , B60H1/00807 , F02D2200/0416 , F02N2200/122 , Y02T10/48
摘要： A method of determining an Idle Stop and Go (ISG) ventilation condition may include an ISG restriction early step that calculates an expected external air temperature through modeling using information acquired from a vehicle and execute an ISG logic to determine whether ISG entrance is possible based on a current ventilation condition of the vehicle, an ISG restriction proceeding step that detects an voltage of an air-conditioning system, an ISG restriction ascertaining step that determines whether an ISG entrance condition is satisfied, wherein the ISG entrance condition includes comparing the expected external air temperature through modeling with a specific temperature and the voltage of the air-conditioning system with a specific voltage, and an ISG entrance step that controls an engine by performing the ISG entrance when the ISG entrance condition is satisfied.
摘要翻译：确定空闲停止和停车（ISG）通气条件的方法可以包括ISG限制早期步骤，其通过使用从车辆获得的信息进行建模来计算预期的外部空气温度，并执行ISG逻辑以基于车辆的当前通风条件，检测空调系统的电压的ISG限制步骤步骤，确定是否满足ISG入口条件的ISG限制确定步骤，其中ISG入口条件包括比较预期的外部空气温度通过具有特定温度的模拟和具有特定电压的空调系统的电压，以及ISG入口步骤，当满足ISG入口条件时通过执行ISG入口来控制发动机。

19. 发明授权

US09208685B2 Navigation device, navigation system, and method of operating the same 有权
标题翻译：导航装置，导航系统及其操作方法
公开(公告)号：US09208685B2
公开(公告)日：2015-12-08
申请号：US13319733
申请日：2010-04-12
申请人： Hyungjun Kim
发明人： Hyungjun Kim
IPC分类号： G08G1/00 , G08G1/0968 , G01C21/34 , G01C21/36
CPC分类号： G01C21/362 , G01C21/3461 , G01C21/3484 , G01C21/3617 , G08G1/096816 , G08G1/09685 , G08G1/096866
摘要： A navigation device and a method of operating the same are provided. Further, a method of operating a navigation system including a navigation device, a data server and an electronic device is provided. The navigation device includes a communication unit; a display; an input unit for receiving an input of data; a communication unit; and a controller for controlling operation of the display and the input unit. The controller connects to a data server through the communication unit, requests path setting information to the data server, receives the path setting information from the data server, acquires present position information of the navigation device, acquires a user moving path by reflecting the acquired position information and the received path setting information, and sets the user moving path as a guidance path. In this case, the path setting information is generated in another electronic device or the data server based on user input information input from the another electronic device.
摘要翻译：提供导航装置及其操作方法。此外，提供了一种操作包括导航装置，数据服务器和电子装置的导航系统的方法。导航装置包括通信单元; 一个显示器用于接收数据输入的输入单元; 通信单元; 以及用于控制显示器和输入单元的操作的控制器。控制器通过通信单元连接到数据服务器，向数据服务器请求路径设置信息，从数据服务器接收路径设置信息，获取导航装置的当前位置信息，通过反映获取的位置获取用户移动路径信息和接收路径设置信息，并且将用户移动路径设置为引导路径。在这种情况下，基于从另一电子设备输入的用户输入信息，在另一电子设备或数据服务器中生成路径设置信息。

20. 发明授权

US09057923B2 Wire, method of manufacture, and related apparatus 有权
标题翻译：电线，制造方法和相关装置
公开(公告)号：US09057923B2
公开(公告)日：2015-06-16
申请号：US13163528
申请日：2011-06-17
申请人： Chong Sup Chang , Yoonho Khang , Changoh Jeong , Sehwan Yu , Sangho Park , Su-Hyoung Kang , Hyungjun Kim , Honglong Ning , Jinho Hwang , Myounggeun Cha , Youngki Shin
发明人： Chong Sup Chang , Yoonho Khang , Changoh Jeong , Sehwan Yu , Sangho Park , Su-Hyoung Kang , Hyungjun Kim , Honglong Ning , Jinho Hwang , Myounggeun Cha , Youngki Shin
IPC分类号： G02F1/136 , G02F1/1343 , G02F1/1362
CPC分类号： G02F1/136286 , G02F2001/136236 , G02F2001/136295 , G02F2201/123 , Y10T29/49155
摘要： A wire is provided on an insulating substrate to have a first thickness in a first area and a second thickness smaller than the first thickness in a second area except for the first area. A display apparatus includes the wire. The wire is formed by forming a first conductive layer and a second conductive layer on the insulating substrate and etching the first and second conductive layers using photoresist layer patterns having different thicknesses.
摘要翻译：在除了第一区域之外的第二区域中，在绝缘基板上设置有具有在第一区域中的第一厚度和小于第一厚度的第二厚度的布线。显示装置包括线。通过在绝缘基板上形成第一导电层和第二导电层并使用具有不同厚度的光致抗蚀剂层图案蚀刻第一和第二导电层来形成导线。

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