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11. 发明申请

US20120017183A1 System and Method for Creating a Focus-Exposure Model of a Lithography Process 有权
标题翻译：用于创建光刻过程聚焦曝光模型的系统和方法
公开(公告)号：US20120017183A1
公开(公告)日：2012-01-19
申请号：US13244051
申请日：2011-09-23
申请人： Jun Ye , Yu Cao , Luoqi Chen , Hua-Yu Liu
发明人： Jun Ye , Yu Cao , Luoqi Chen , Hua-Yu Liu
IPC分类号： G06F17/50
CPC分类号： G03F7/70641 , G03F7/705 , G03F7/70516 , G03F7/70625
摘要： A system and a method for creating a focus-exposure model of a lithography process are disclosed. The system and the method utilize calibration data along multiple dimensions of parameter variations, in particular within an exposure-defocus process window space. The system and the method provide a unified set of model parameter values that result in better accuracy and robustness of simulations at nominal process conditions, as well as the ability to predict lithographic performance at any point continuously throughout a complete process window area without a need for recalibration at different settings. With a smaller number of measurements required than the prior-art multiple-model calibration, the focus-exposure model provides more predictive and more robust model parameter values that can be used at any location in the process window.
摘要翻译：公开了一种用于创建光刻工艺的聚焦曝光模型的系统和方法。系统和方法利用参数变化的多个维度的校准数据，特别是在曝光 - 散焦过程窗口空间内。该系统和方法提供了一套统一的模型参数值，可在标称工艺条件下提供更好的模拟精度和鲁棒性，以及能够在整个过程窗口区域内连续预测任何点的光刻性能，而无需重新校准在不同的设置。与现有技术的多模型校准相比，要进行的测量数量要少一些，聚焦曝光模型提供了更多的预测性和更健壮的模型参数值，可以在过程窗口中的任何位置使用。

12. 发明授权

US08065636B2 System and method for creating a focus-exposure model of a lithography process 有权
标题翻译：用于创建光刻工艺的焦点曝光模型的系统和方法
公开(公告)号：US08065636B2
公开(公告)日：2011-11-22
申请号：US12782666
申请日：2010-05-18
申请人： Jun Ye , Yu Cao , Luoqi Chen , Hua-Yu Liu
发明人： Jun Ye , Yu Cao , Luoqi Chen , Hua-Yu Liu
IPC分类号： G06F17/50
CPC分类号： G03F7/70641 , G03F7/705 , G03F7/70516 , G03F7/70625
摘要： A system and a method for creating a focus-exposure model of a lithography process are disclosed. The system and the method utilize calibration data along multiple dimensions of parameter variations, in particular within an exposure-defocus process window space. The system and the method provide a unified set of model parameter values that result in better accuracy and robustness of simulations at nominal process conditions, as well as the ability to predict lithographic performance at any point continuously throughout a complete process window area without a need for recalibration at different settings. With a smaller number of measurements required than the prior-art multiple-model calibration, the focus-exposure model provides more predictive and more robust model parameter values that can be used at any location in the process window.
摘要翻译：公开了一种用于创建光刻工艺的聚焦曝光模型的系统和方法。系统和方法利用参数变化的多个维度的校准数据，特别是在曝光 - 散焦过程窗口空间内。该系统和方法提供了一套统一的模型参数值，可在标称工艺条件下提供更好的模拟精度和鲁棒性，以及能够在整个过程窗口区域内连续预测任何点的光刻性能，而无需重新校准在不同的设置。与现有技术的多模型校准相比，要进行的测量数量要少一些，聚焦曝光模型提供了更多的预测性和更健壮的模型参数值，可以在过程窗口中的任何位置使用。

13. 发明授权

US07178128B2 Alternating phase shift mask design conflict resolution 有权
标题翻译：交替相移掩模设计冲突解决
公开(公告)号：US07178128B2
公开(公告)日：2007-02-13
申请号：US10272104
申请日：2002-10-15
申请人： Hua-Yu Liu , Christophe Pierrat , Kent Richardson
发明人： Hua-Yu Liu , Christophe Pierrat , Kent Richardson
IPC分类号： G06F17/50
CPC分类号： G03F1/30
摘要： Methods and apparatuses for preparing layouts and masks that use phase shifting to enable production of subwavelength features on an integrated circuit in close (optical) proximity to other structures are described. One embodiment selects from several strategies for resolving conflicts between phase shifters used to define features and (optically) proximate structures that are being defined other than by phase shifting. One embodiment adds additional phase shifters to define the conflicting structures. Another embodiment corrects the shape of the phase shifters in proximity to a conflicting structure. Resulting integrated circuits can include a greater number of subwavelength features even in areas that are in close proximity to structures that were not initially identified for production using a phase shifting mask.
摘要翻译：描述了用于制备使用相移的布局和掩模的方法和装置，以使得能够在紧密（光学）接近其它结构的集成电路上产生亚波长特征。一个实施例从用于解决用于定义特征的移相器之间的冲突的几种策略中选择（以光学方式）除了通过相移之外定义的邻近结构之间的冲突。一个实施例增加了附加移相器来定义冲突结构。另一个实施例校正了相邻结构附近的移相器的形状。所得到的集成电路可以包括更多数量的亚波长特征，即使在与初始识别用于使用相移掩模生产的结构非常接近的区域中。

14. 发明授权

US06830854B2 System and method for correcting 3D effects in an alternating phase-shifting mask 有权
标题翻译：用于在交替相移掩模中校正3D效果的系统和方法
公开(公告)号：US06830854B2
公开(公告)日：2004-12-14
申请号：US10685751
申请日：2003-10-14
申请人： Yong Liu , Hua-Yu Liu
发明人： Yong Liu , Hua-Yu Liu
IPC分类号： G03F900
CPC分类号： G03F1/30 , G03F1/36
摘要： An accurate, cost-effective system and method for correcting 3D effects on an alternating phase-shifting mask (PSM) is provided. To facilitate this correction, a library can be built to include a first group of 180 degree phase-shifting regions, wherein these regions have a common first size. Based on this first size, 3D simulation is performed. A transmission and a phase are altered in a 2D simulation based on this first size until a shape dependent transmission and a shape dependent phase allow the 2D simulation to substantially match the 3D simulation. Finally, a modified first size is chosen using the shape dependent transmission and the shape dependent phase such that a 2D simulation based on the modified first size substantially matches the 3D simulation based on the first size. The library associates the first size with the modified first size, the shape dependent transmission, and the shape dependent phase.
摘要翻译：提供了一种用于校正交替相移掩模（PSM）上的3D效果的准确，经济有效的系统和方法。为了便于该校正，可以构建库以包括第一组180度相移区域，其中这些区域具有共同的第一尺寸。基于该第一尺寸，进行3D模拟。在基于该第一尺寸的2D模拟中改变传输和相位，直到形状相关传输和形状相关相位允许2D模拟基本上匹配3D模拟。最后，使用形状依赖的传输和形状相关的相位来选择修改的第一尺寸，使得基于修改后的第一尺寸的2D模拟基于第一尺寸基本匹配3D模拟。该库将第一个大小与修改的第一个大小，形状相关的传输和形状依赖相关联。

15. 发明授权

US06704921B2 Automated flow in PSM phase assignment 有权
标题翻译： PSM相位分配中的自动流量
公开(公告)号：US06704921B2
公开(公告)日：2004-03-09
申请号：US10116660
申请日：2002-04-03
申请人： Hua-Yu Liu
发明人： Hua-Yu Liu
IPC分类号： G06F1750
CPC分类号： G06F17/5068
摘要： An automated phase assignment method is described that allows multiple rules for defining phase shifters to be used within a single cell. The rules for defining phase shifters can be sequenced. Then for a cell, the rules can be recursively applied. At each stage if the number of phase conflicts is below a threshold, then portions of the cell having conflicts are masked and processed using the next less aggressive rule set. This in turn leads to phase shifting masks with greater variation in phase shifter shapes and sizes. When the mask is used to fabricate integrated circuits (ICs), the resulting IC may have a greater number of small transistors and other features than a mask defined using only a single rule set per cell. Additional benefits can include better process latitude during IC fabrication and improved yield.
摘要翻译：描述了允许在单个单元内使用用于定义移相器的多个规则的自动相位分配方法。定义移相器的规则可以排序。然后对于单元格，可以递归地应用规则。在每个阶段，如果相位冲突的数量低于阈值，则使用下一个较不具有侵蚀性的规则集来屏蔽并处理具有冲突的单元的部分。这又导致移相器形状和尺寸变化较大的相移掩模。当掩模用于制造集成电路（IC）时，与仅使用每个单元的单个规则集定义的掩模相比，所得到的IC可具有更多数量的小晶体管和其它特征。额外的好处可以包括在IC制造过程中更好的工艺自由度和提高产量。

16. 发明授权

US06670082B2 System and method for correcting 3D effects in an alternating phase-shifting mask 有权
标题翻译：用于在交替相移掩模中校正3D效果的系统和方法
公开(公告)号：US06670082B2
公开(公告)日：2003-12-30
申请号：US09974507
申请日：2001-10-09
申请人： Yong Liu , Hua-Yu Liu
发明人： Yong Liu , Hua-Yu Liu
IPC分类号： G03F900
CPC分类号： G03F1/30 , G03F1/36
摘要： An accurate, cost-effective system and method for correcting 3D effects on an alternating phase-shifting mask (PSM) is provided. To facilitate this correction, a library can be built to include a first group of 180 degree phase-shifting regions, wherein these regions have a common first size. Based on this first size, 3D simulation is performed. A transmission and a phase are altered in a 2D simulation based on this first size until a shape dependent transmission and a shape dependent phase allow the 2D simulation to substantially match the 3D simulation. Finally, a modified first size is chosen using the shape dependent transmission and the shape dependent phase such that a 2D simulation based on the modified first size substantially matches the 3D simulation based on the first size. The library associates the first size with the modified first size, the shape dependent transmission, and the shape dependent phase.
摘要翻译：提供了一种用于校正交替相移掩模（PSM）上的3D效果的准确，经济有效的系统和方法。为了便于该校正，可以构建库以包括第一组180度相移区域，其中这些区域具有共同的第一尺寸。基于该第一尺寸，进行3D模拟。在基于该第一尺寸的2D模拟中改变传输和相位，直到形状相关传输和形状相关相位允许2D模拟基本上匹配3D模拟。最后，使用形状依赖的传输和形状相关的相位来选择修改的第一尺寸，使得基于修改后的第一尺寸的2D模拟基于第一尺寸基本匹配3D模拟。该库将第一个大小与修改的第一个大小，形状相关的传输和形状依赖相关联。

17. 外观设计

USD689039S1 Stereo set 有权
标题翻译：立体声集
公开(公告)号：USD689039S1
公开(公告)日：2013-09-03
申请号：US29427014
申请日：2012-07-12
申请人： Hua-Yu Liu
设计人： Hua-Yu Liu

18. 发明授权

US08438508B2 Pattern selection for full-chip source and mask optimization 有权
标题翻译：全片选择源码和掩码优化
公开(公告)号：US08438508B2
公开(公告)日：2013-05-07
申请号：US12914946
申请日：2010-10-28
申请人： Hua-Yu Liu
发明人： Hua-Yu Liu
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/144 , G03F1/36 , G03F7/70125 , G03F7/70425 , G03F7/70441 , G03F7/705 , G03F7/70666 , G06F17/50 , G06F17/5009
摘要： The present invention relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present invention enables full chip pattern coverage while lowering the computation cost by intelligently selecting a small set of critical design patterns from the full set of clips to be used in source and mask optimization. Optimization is performed only on these selected patterns to obtain an optimized source. The optimized source is then used to optimize the mask (e.g. using OPC and manufacturability verification) for the full chip, and the process window performance results are compared. If the results are comparable to conventional full-chip SMO, the process ends, otherwise various methods are provided for iteratively converging on the successful result.
摘要翻译：本发明涉及光刻设备和工艺，更具体地涉及用于优化用于光刻设备和工艺的照明源和掩模的工具。根据某些方面，本发明通过从源和掩码优化中使用的全套剪辑智能地选择一小组关键设计模式来实现全芯片模式覆盖，同时降低计算成本。仅对这些选择的模式执行优化以获得优化的源。然后优化的源用于优化全芯片的掩模（例如使用OPC和可制造性验证），并比较处理窗口性能结果。如果结果与传统的全芯片SMO相当，则过程结束，否则提供了各种方法来迭代地收敛成功的结果。

19. 发明授权

US06684382B2 Microloading effect correction 有权
标题翻译：微加载效应校正
公开(公告)号：US06684382B2
公开(公告)日：2004-01-27
申请号：US09945012
申请日：2001-08-31
申请人： Hua-Yu Liu
发明人： Hua-Yu Liu
IPC分类号： G06F1750
CPC分类号： G03F1/36 , G03F1/68
摘要： A method and apparatus for providing correction for microloading effects is described. Hybrid proximity correction techniques are used to make the problem computationally more feasible. More specifically, feature edges in a layout can be grouped into those edges, or edge segments, with a large edge separation (group B), e.g. greater than n, and those having less than that separation (group A). The group B features can then be corrected for microloading effects rapidly using rules based correction. Then both groups of edges can be corrected using model based optical proximity correction using the output of the rule based correction as the ideal, or reference, layout.
摘要翻译：描述了一种用于提供微载荷效应校正的方法和装置。混合接近校正技术用于使问题在计算上更可行。更具体地，布局中的特征边缘可以被分组成具有大边缘分离（组B）的那些边缘或边缘片段。大于n，且具有小于该分离的那些（A组）。然后可以使用基于规则的校正快速校正组B特征。然后，使用基于规则的校正的输出作为理想或参考布局，可以使用基于模型的光学邻近校正来校正两组边缘。

20. 发明授权

US06664009B2 Method and apparatus for allowing phase conflicts in phase shifting mask and chromeless phase edges 有权
公开(公告)号：US06664009B2
公开(公告)日：2003-12-16
申请号：US09917581
申请日：2001-07-27
申请人： Hua-Yu Liu
发明人： Hua-Yu Liu
IPC分类号： G03F900
CPC分类号： G03F1/30 , G03F1/70
摘要： Phase shifting layouts and masks with phase conflicts are described. The phase shifting layout defines light transmissive regions for use in defining selected features in a layer of material of an integrated circuit (IC). The phase shifting layout includes a phase conflict caused by two light transmissive regions that are out of phase with each other and which, without correction, would lead to the definition of an artifact in the layer of material. A corresponding mask adapted for use in conjunction with the phase shifting mask can ensure that the artifact is ultimately erased. The phase conflict is intentionally introduced into the phase shifting layout during phase assignment to permit all of the selected features to be defined using the phase shifting mask.

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