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11. 发明授权

US07642532B2 Aperture design for improving critical dimension accuracy and electron beam lithography throughput 失效
标题翻译：孔径设计，用于提高临界尺寸精度和电子束光刻产量
公开(公告)号：US07642532B2
公开(公告)日：2010-01-05
申请号：US11340249
申请日：2006-01-26
申请人： Chia-Jen Chen , Hsin-Chang Lee , Hung Chang Hsieh
发明人： Chia-Jen Chen , Hsin-Chang Lee , Hung Chang Hsieh
IPC分类号： H01J37/28
CPC分类号： G06Q40/00 , B82Y10/00 , B82Y40/00 , G03F1/78 , H01J37/3174
摘要： Disclosed is an improved aperture design for improving critical dimension accuracy and electron beam lithography. A pattern may be created on a reticle by passing an electron beam through a first aperture having a first shape comprising an upper horizontal edge, a lower horizontal edge, a vertical edge, an upper bevel, and a lower bevel, wherein a portion of the electron beam is projected onto a second aperture. The portion of the electronic beam is passed through the second aperture having a second shape, wherein the second shape is the first shape rotated horizontally by 180 degrees, and an overlapped portion of the first and second aperture is exposed on a surface of the reticle to create a pattern.
摘要翻译：公开了一种改进的孔径设计，用于改进临界尺寸精度和电子束光刻。可以通过使电子束通过具有包括上部水平边缘，下部水平边缘，垂直边缘，上部斜面和下部斜面的第一形状的第一孔而在掩模版上形成图案，其中，电子束投射到第二孔上。电子束的部分通过具有第二形状的第二孔，其中第二形状是水平旋转180度的第一形状，并且第一和第二孔的重叠部分暴露在掩模版的表面上创建一个模式。

12. 发明申请

US20090258159A1 NOVEL TREATMENT FOR MASK SURFACE CHEMICAL REDUCTION 审中-公开
标题翻译：用于掩模表面化学还原的新型处理
公开(公告)号：US20090258159A1
公开(公告)日：2009-10-15
申请号：US12100822
申请日：2008-04-10
申请人： Yih-Chen Su , Ting-Hao Hsu , Sheng-Chi Chin , Heng-Jen Lee , Hung Chang Hsieh , Yao-Ching Ku
发明人： Yih-Chen Su , Ting-Hao Hsu , Sheng-Chi Chin , Heng-Jen Lee , Hung Chang Hsieh , Yao-Ching Ku
IPC分类号： B08B6/00 , B05D3/06
CPC分类号： G03F1/82
摘要： A method includes forming an absorption material layer on a mask; applying a plasma treatment to the mask to reduce chemical contaminants after the forming of the absorption material layer; performing a chemical cleaning process of the mask; and performing a gas injection to the mask.
摘要翻译：一种方法包括在掩模上形成吸收材料层; 对掩模施加等离子体处理以在形成吸收材料层之后减少化学污染物; 进行面罩的化学清洗处理; 并对所述面罩进行气体注入。

13. 发明申请

US20070291244A1 METHOD AND APPARATUS FOR COMPENSATED ILLUMINATION FOR ADVANCED LITHOGRAPHY 失效
标题翻译：用于高级光刻的补偿照明的方法和装置
公开(公告)号：US20070291244A1
公开(公告)日：2007-12-20
申请号：US11424173
申请日：2006-06-14
申请人： Shih-Ming CHANG , Wen-Chuan WANG , Chih-Cheng CHIN , Chi-Lun LU , Sheng-Chi CHIN , Hung Chang Hsieh
发明人： Shih-Ming CHANG , Wen-Chuan WANG , Chih-Cheng CHIN , Chi-Lun LU , Sheng-Chi CHIN , Hung Chang Hsieh
IPC分类号： G03B27/54
CPC分类号： G03F7/701
摘要： Disclosed is a lithography system. The lithography system includes a source designed to provide energy; an imaging system configured to direct the energy onto a substrate to form a predefined image thereon, and defining an optical axis; and an aperture incorporated with the imaging system, the aperture having a plurality of transmitting regions defined along radial axis not parallel to the optical axis, and each transmitting region operable to transmit the energy with adjustable intensity.
摘要翻译：公开了一种光刻系统。光刻系统包括设计用于提供能量的源; 成像系统，被配置为将能量引导到衬底上以在其上形成预定图像，并且限定光轴; 以及与成像系统结合的孔，所述孔具有沿着不平行于光轴的径向轴线限定的多个透射区域，并且每个透射区域可操作以以可调节的强度透射能量。

14. 发明授权

US08703403B2 Method and apparatus for drying a wafer 有权
标题翻译：干燥晶片的方法和装置
公开(公告)号：US08703403B2
公开(公告)日：2014-04-22
申请号：US13334266
申请日：2011-12-22
申请人： Wei-Chieh Huang , Hung Chang Hsieh
发明人： Wei-Chieh Huang , Hung Chang Hsieh
IPC分类号： G03F7/26
CPC分类号： G03F7/3021 , B05C9/12 , B05C11/02 , B05C11/023 , B05C11/08 , B05C13/00 , H01L21/67017 , H01L21/67028 , H01L21/67034 , H01L21/6715
摘要： The present disclosure provides a method of fabricating a semiconductor device. The method includes dispensing a liquid on a wafer. The method includes raising the wafer. The method includes lowering the wafer after the raising. The wafer is spun as it is lowered, thereby removing at least a portion of the liquid from the wafer. The present disclosure also provides an apparatus for fabricating a semiconductor device. The apparatus includes a wafer chuck that is operable to hold a semiconductor wafer and secure the wafer thereto. The wafer has a front surface and a back surface. The apparatus includes a dispenser that is operable to dispense a liquid to the front surface of the wafer. The apparatus includes a mechanical structure that is operable to: spin the wafer chuck in a horizontal direction; and move the wafer chuck downwards in a vertical direction while the wafer chuck is being rotated.
摘要翻译：本公开提供了制造半导体器件的方法。该方法包括将液体分配在晶片上。该方法包括升高晶片。该方法包括在升高之后降低晶片。晶片在降低时旋转，从而从晶片去除至少一部分液体。本公开还提供了一种用于制造半导体器件的装置。该装置包括可操作以保持半导体晶片并将晶片固定到其上的晶片卡盘。晶片具有前表面和后表面。该装置包括可操作以将液体分配到晶片的前表面的分配器。该装置包括机械结构，其可操作以：在水平方向上旋转晶片卡盘; 并且在晶片卡盘旋转的同时沿着垂直方向向下移动晶片卡盘。

15. 发明授权

US08416393B2 Cross quadrupole double lithography method and apparatus for semiconductor device fabrication using two apertures 有权
标题翻译：用于使用两个孔的半导体器件制造的交叉四极双光刻方法和装置
公开(公告)号：US08416393B2
公开(公告)日：2013-04-09
申请号：US12417090
申请日：2009-04-02
申请人： Hsien-Cheng Wang , Hung Chang Hsieh , Shih-Che Wang , Ping Chieh Wu , Wen-Chun Huang , Ming-Chang Wen
发明人： Hsien-Cheng Wang , Hung Chang Hsieh , Shih-Che Wang , Ping Chieh Wu , Wen-Chun Huang , Ming-Chang Wen
IPC分类号： G03B27/72
CPC分类号： G03B27/523 , G03B27/54 , G03F7/701 , H01L21/302
摘要： Provided is a lithography system operation to include a first aperture or a second aperture. Each of the first and second apertures has two pairs of radiation-transmitting regions where one pair of radiation-transmitting regions are larger than a second pair. For an aperture, each pair of radiation-transmitting regions are on different diametrical axis. In an embodiment, one aperture is used for x-dipole illumination and the second aperture is used for y-dipole illumination.
摘要翻译：提供了包括第一孔或第二孔的光刻系统操作。第一和第二孔中的每一个具有两对辐射透射区域，其中一对辐射透射区域大于第二对。对于孔径，每对辐射透射区域在不同的直径轴线上。在一个实施例中，一个孔用于x-偶极照明，第二个孔用于y-偶极照明。

16. 发明申请

US20120293782A1 Methods and Systems for Lithography Alignment 审中-公开
标题翻译：光刻对准方法与系统
公开(公告)号：US20120293782A1
公开(公告)日：2012-11-22
申请号：US13564085
申请日：2012-08-01
申请人： Hsiao-Tzu Lu , Hung Chang Hsieh , Kuei Shun Chen , Hsueh-Hung Fu , Ching-Hua Hsieh , Shau-Lin Shue
发明人： Hsiao-Tzu Lu , Hung Chang Hsieh , Kuei Shun Chen , Hsueh-Hung Fu , Ching-Hua Hsieh , Shau-Lin Shue
IPC分类号： G03B27/42
CPC分类号： G03F7/70725 , G03F7/70358 , G03F7/70783 , H01L21/67288
摘要： Methods and systems for lithographically exposing a substrate based on a curvature profile of the substrate.
摘要翻译：基于基板的曲率轮廓光刻曝光基板的方法和系统。

17. 发明授权

US06930883B2 Heat-dispersing module of electronic device 有权
标题翻译：电子装置散热模块
公开(公告)号：US06930883B2
公开(公告)日：2005-08-16
申请号：US10691647
申请日：2003-10-24
申请人： Hung Chang Hsieh , Chih-Chi Wu , Jui-Yuan Hsu , Chih-Jen Chen , Min-Kuang Chang
发明人： Hung Chang Hsieh , Chih-Chi Wu , Jui-Yuan Hsu , Chih-Jen Chen , Min-Kuang Chang
IPC分类号： G06F1/20 , H05K7/20
CPC分类号： H05K7/20909 , G06F1/20
摘要： A heat-dispersing module of an electronic device is disclosed. The heat-dispersing module includes: a housing having a top surface, a bottom surface, a first side surface and a second side surface, wherein the first side surface is opposite to the second side surface; a heat-dispersing fan mounted on the first side surface of the housing; a first vent area disposed on the second side surface of the housing; a second vent area disposed on the top surface of the housing; and a printed circuit board positioned in the housing, thereby a first airflow channel is formed between the top surface of the housing and the printed circuit board and a second airflow channel is formed between the bottom surface of the housing and the printed circuit board, wherein the printed circuit board produces a relatively higher heat at the second airflow channel than the first airflow channel and a distance of the second airflow channel from the printed circuit board to the bottom surface is relatively larger than that of the first airflow channel from the printed circuit board to the top surface.
摘要翻译：公开了一种电子设备的散热模块。散热模块包括：壳体，其具有顶表面，底表面，第一侧表面和第二侧表面，其中第一侧表面与第二侧表面相对; 安装在所述壳体的所述第一侧表面上的散热风扇; 设置在所述壳体的第二侧表面上的第一通气区域; 设置在所述壳体的顶表面上的第二通气区域; 以及位于壳体中的印刷电路板，由此在壳体的顶表面和印刷电路板之间形成第一气流通道，并且在壳体的底表面和印刷电路板之间形成第二气流通道，其中印刷电路板在第二气流通道处产生比第一气流通道相对较高的热量，并且第二气流通道从印刷电路板到底面的距离比来自印刷电路的第一气流通道的距离板到顶面。

18. 发明授权

US08580637B2 Method of patterning a semiconductor device having improved spacing and shape control and a semiconductor device 有权
标题翻译：图案化具有改进的间隔和形状控制的半导体器件的方法和半导体器件
公开(公告)号：US08580637B2
公开(公告)日：2013-11-12
申请号：US13328419
申请日：2011-12-16
申请人： Jhun Hua Chen , Yu-Lung Tung , Chi-Tien Chen , Hua-Tai Lin , Hsiang-Lin Chen , Hung Chang Hsieh , Yi-Fan Chen
发明人： Jhun Hua Chen , Yu-Lung Tung , Chi-Tien Chen , Hua-Tai Lin , Hsiang-Lin Chen , Hung Chang Hsieh , Yi-Fan Chen
IPC分类号： H01L21/8242
CPC分类号： H01L23/528 , H01L21/31144 , H01L21/76897 , H01L21/8238 , H01L21/823871 , H01L2924/0002 , H01L2924/00
摘要： A pattern on a semiconductor substrate is formed using two separate etching processes. The first etching process removes a portion of an intermediate layer above an active region of the substrate. The second etching process exposes a portion of the active region of the substrate. A semiconductor device formed using the patterning method has a decreased mask error enhancement factor and increased critical dimension uniformity than the prior art.
摘要翻译：使用两个单独的蚀刻工艺形成半导体衬底上的图案。第一蚀刻工艺除去衬底的有源区上方的中间层的一部分。第二蚀刻工艺暴露了衬底的一部分有源区。使用图案化方法形成的半导体器件具有比现有技术更低的掩模误差增强因子和增加的临界尺寸均匀性。

19. 发明申请

US20130164685A1 METHOD AND APPARATUS FOR DRYING A WAFER 有权
标题翻译：干燥方法和装置
公开(公告)号：US20130164685A1
公开(公告)日：2013-06-27
申请号：US13334266
申请日：2011-12-22
申请人： Wei-Chieh Huang , Hung Chang Hsieh
发明人： Wei-Chieh Huang , Hung Chang Hsieh
IPC分类号： G03F7/20 , H01L21/306 , G03F7/30
CPC分类号： G03F7/3021 , B05C9/12 , B05C11/02 , B05C11/023 , B05C11/08 , B05C13/00 , H01L21/67017 , H01L21/67028 , H01L21/67034 , H01L21/6715
摘要： The present disclosure provides a method of fabricating a semiconductor device. The method includes dispensing a liquid on a wafer. The method includes raising the wafer. The method includes lowering the wafer after the raising. The wafer is spun as it is lowered, thereby removing at least a portion of the liquid from the wafer. The present disclosure also provides an apparatus for fabricating a semiconductor device. The apparatus includes a wafer chuck that is operable to hold a semiconductor wafer and secure the wafer thereto. The wafer has a front surface and a back surface. The apparatus includes a dispenser that is operable to dispense a liquid to the front surface of the wafer. The apparatus includes a mechanical structure that is operable to: spin the wafer chuck in a horizontal direction; and move the wafer chuck downwards in a vertical direction while the wafer chuck is being rotated.
摘要翻译：本公开提供了制造半导体器件的方法。该方法包括将液体分配在晶片上。该方法包括升高晶片。该方法包括在升高之后降低晶片。晶片在降低时旋转，从而从晶片去除至少一部分液体。本公开还提供了一种用于制造半导体器件的装置。该装置包括可操作以保持半导体晶片并将晶片固定到其上的晶片卡盘。晶片具有前表面和后表面。该装置包括可操作以将液体分配到晶片的前表面的分配器。该装置包括机械结构，其可操作以：在水平方向上旋转晶片卡盘; 并且在晶片卡盘旋转的同时沿着垂直方向向下移动晶片卡盘。

20. 发明授权

US08313889B2 Double patterning method using metallic compound mask layer 有权
标题翻译：使用金属化合物掩模层的双重图案化方法
公开(公告)号：US08313889B2
公开(公告)日：2012-11-20
申请号：US12752281
申请日：2010-04-01
申请人： Vincent Yu , Chih-Yang Yeh , Hung Chang Hsieh
发明人： Vincent Yu , Chih-Yang Yeh , Hung Chang Hsieh
IPC分类号： G03F7/26
CPC分类号： G03F7/0035 , G03F7/091 , G03F7/094 , G03F7/11 , H01L21/0337 , H01L21/31144
摘要： A hard mask layer and a developable bottom anti-reflective coating (dBARC) layer are formed over a dielectric layer of a substrate. A first photosensitive layer is formed above the dBARC layer, exposed, and developed to form a first pattern. The dBARC layer is developed. The first pattern is etched into the hard mask layer to form a first pattern of openings in the hard mask layer. Following removal of the first photosensitive layer, a second photosensitive layer is formed within the first pattern of openings. The second photosensitive layer is exposed and developed to form a second pattern. The dBARC layer is developed. The second pattern is etched into the hard mask layer to form a second pattern of openings in the hard mask layer. Following the removal of the second photosensitive layer and the dBARC layer, the first and the second patterns are etched into the dielectric layer.
摘要翻译：在衬底的介电层上形成硬掩模层和可显影底部抗反射涂层（dBARC）层。第一感光层形成在dBARC层上方，暴露并显影以形成第一图案。开发了dBARC层。将第一图案蚀刻到硬掩模层中以在硬掩模层中形成开口的第一图案。在移除第一感光层之后，在第一开口图案内形成第二感光层。第二感光层被曝光和显影以形成第二图案。开发了dBARC层。将第二图案蚀刻到硬掩模层中以在硬掩模层中形成开口的第二图案。在去除第二感光层和dBARC层之后，将第一和第二图案蚀刻到电介质层中。

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