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11. 发明申请

US20060040404A1 Inkjet spotting apparatus for manufacturing microarrays and method of spotting using the same 审中-公开
标题翻译：用于制造微阵列的喷墨点样装置及其使用方法
公开(公告)号：US20060040404A1
公开(公告)日：2006-02-23
申请号：US11204489
申请日：2005-08-16
申请人： Ji-hyuk Lim , Dong-kee Sohn , Min-soo Kim , Keon Kuk
发明人： Ji-hyuk Lim , Dong-kee Sohn , Min-soo Kim , Keon Kuk
IPC分类号： B01L3/00
CPC分类号： B01L3/0268 , B01J19/0046 , B01J2219/0036 , B01J2219/00378 , B01J2219/00527 , B01J2219/00722 , B01J2219/00725 , B01L2200/021 , B01L2300/0819 , B01L2400/027 , B01L2400/0439 , B01L2400/0442 , Y10T436/2575
摘要： Provided are an inkjet-type spotting apparatus for manufacturing microarrays and a method of spotting using the same. The spotting apparatus includes a plurality of reservoirs which are arranged in rows and filled with a predetermined biomolecule solution; and a plurality of nozzles, each corresponding to one of the reservoirs and through which the biomolecule solution is ejected, wherein a distance between the nozzles in a first direction is larger than a distance between spots in a spot array, and the biomolecule solution is ejected sequentially from the nozzles in each of the rows onto a solid support while the apparatus moves in the first direction to form the spot array.
摘要翻译：提供了一种用于制造微阵列的喷墨型点样装置和使用其的点样方法。点样装置包括排列成行并填充预定生物分子溶液的多个储存器; 以及多个喷嘴，每个喷嘴各自对应于一个储存器并且通过其喷射生物分子溶液，其中第一方向上的喷嘴之间的距离大于点阵列中的点之间的距离，并且生物分子溶液被喷射当设备沿第一方向移动以形成点阵列时，从每行中的喷嘴顺序地到固体支撑件上。

12. 发明授权

US08045318B2 Tunable capacitor using electrowetting phenomenon 有权
标题翻译：可调电容器采用电润湿现象
公开(公告)号：US08045318B2
公开(公告)日：2011-10-25
申请号：US12652948
申请日：2010-01-06
申请人： Seung-tae Choi , Ji-hyuk Lim , Woon-bae Kim , Eun-seok Park , Jeong-yub Lee
发明人： Seung-tae Choi , Ji-hyuk Lim , Woon-bae Kim , Eun-seok Park , Jeong-yub Lee
IPC分类号： H01G5/00
CPC分类号： H01G5/0132
摘要： A tunable capacitor using an electrowetting phenomenon includes a first electrode; a second electrode which is spaced apart from the first electrode and faces the first electrode; a fluidic channel which is disposed between the first electrode and the second electrode; a first insulating layer which is disposed between the first electrode and the fluidic channel; and a conductive fluid which is disposed in the fluidic channel and moves along the fluidic channel when a direct current (DC) potential difference occurs between the first and second electrodes. Accordingly, it is possible to fabricate the tunable capacitor with the simplified fabrication process, good reliability and durability, and no restriction on the tuning range.
摘要翻译：使用电润湿现象的可调谐电容器包括第一电极; 第二电极，与第一电极间隔开并面向第一电极; 设置在第一电极和第二电极之间的流体通道; 布置在第一电极和流体通道之间的第一绝缘层; 以及当在第一和第二电极之间发生直流（DC）电位差时，布置在流体通道中并沿着流体通道移动的导电流体。因此，可以以简化的制造工艺，良好的可靠性和耐久性制造可调电容器，并且对调谐范围没有限制。

13. 发明授权

US07626258B2 Cap wafer, semiconductor chip having the same, and fabrication method thereof 有权
标题翻译：盖晶片，具有相同的半导体芯片及其制造方法
公开(公告)号：US07626258B2
公开(公告)日：2009-12-01
申请号：US11657056
申请日：2007-01-24
申请人： Ji-hyuk Lim , Jun-sik Hwang , Woon-bae Kim
发明人： Ji-hyuk Lim , Jun-sik Hwang , Woon-bae Kim
IPC分类号： H01L23/12 , H01L23/42
CPC分类号： B81B7/007 , B81B2207/095
摘要： A cap wafer, fabrication method, and a semiconductor chip are provided. The cap wafer includes a cap wafer substrate; a penetrated electrode formed to penetrate the cap wafer substrate; and an electrode pad connected with a lower portion of the penetrated electrode on a lower surface of the cap wafer substrate, wherein the penetrated electrode has an oblique section which gradually widens from an upper surface to the lower surface of the cap wafer substrate. The fabrication method includes forming an oblique-via hole on a lower surface of a cap wafer substrate, the oblique-via hole having an oblique section which gradually narrows in a direction moving away from the lower surface of the cap wafer substrate; and forming a penetrated electrode in the oblique-via hole. The semiconductor chip includes a base wafer; a cap wafer; a cavity; a penetrated electrode; and a pad bonding layer.
摘要翻译：提供盖晶片，制造方法和半导体芯片。盖晶片包括盖晶片基板; 形成为穿透盖晶片基板的穿透电极; 以及在所述盖片基板的下表面与所述被穿透电极的下部连接的电极焊盘，其中，所述被穿透电极具有从所述盖晶片基板的上表面向下表面逐渐变宽的倾斜部。该制造方法包括在盖晶片基板的下表面上形成倾斜通孔，该倾斜通孔具有在从盖晶片基板的下表面移开的方向上逐渐变窄的倾斜截面; 并且在所述倾斜通孔中形成穿透电极。半导体芯片包括基底晶片; 盖晶片; 一个空腔穿透电极; 和焊垫接合层。

14. 发明申请

US20070290613A1 Backlight module including at least one luminescence element, and method of fabricating the same 有权
标题翻译：包括至少一个发光元件的背光模块及其制造方法
公开(公告)号：US20070290613A1
公开(公告)日：2007-12-20
申请号：US11605295
申请日：2006-11-29
申请人： Seung-tae Choi , Ki-hwan Kwon , Su-ho Shin , Ji-hyuk Lim , Chang-youl Moon , Kyu-ho Shin
发明人： Seung-tae Choi , Ki-hwan Kwon , Su-ho Shin , Ji-hyuk Lim , Chang-youl Moon , Kyu-ho Shin
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H01J1/72 , G02F1/133603 , H01L24/95 , H01L25/0753 , H01L2224/24226 , H01L2224/95145 , H01L2924/12041 , H01L2924/00
摘要： A method of fabricating a backlight module in which at least one luminescence element is positioned, including: positioning a luminescence element in at least one cavity formed on a carrier; forming a lower electrode on a substrate; transferring the luminescence element positioned on the carrier to the substrate, connecting the luminescence element to a pattern of the lower electrode formed on the substrate, and removing the carrier; forming an insulating layer on a surface of the substrate to which the luminescence element is transferred, and exposing a top region of the luminescence element; and forming an upper electrode on the exposed top region of the luminescence element. Accordingly, the backlight module including very small luminescence elements being of a micro unit in size is easily fabricated.
摘要翻译：一种制造其中定位有至少一个发光元件的背光模块的方法，包括：将发光元件定位在形成在载体上的至少一个空腔中; 在基板上形成下电极; 将位于所述载体上的所述发光元件转移到所述基板上，将所述发光元件连接到形成在所述基板上的所述下电极的图案，以及移除所述载体; 在所述衬底的表面上形成绝缘层，所述衬底的所述发光元件被转移到所述衬底的表面上，并且暴露所述发光元件的顶部区域; 以及在所述发光元件的所述暴露的顶部区域上形成上部电极。因此，容易制造包括非常小尺寸的微小单元的发光元件的背光模块。

15. 发明申请

US20070176250A1 Wafer level package for surface acoustic wave device and fabrication method thereof 有权
标题翻译：用于表面声波器件的晶片级封装及其制造方法
公开(公告)号：US20070176250A1
公开(公告)日：2007-08-02
申请号：US11447969
申请日：2006-06-07
申请人： Moon-chul Lee , Jun-sik Hwang , Ji-hyuk Lim , Woon-bae Kim
发明人： Moon-chul Lee , Jun-sik Hwang , Ji-hyuk Lim , Woon-bae Kim
IPC分类号： H01L29/84
CPC分类号： H03H9/1092 , H01L2224/48091 , H01L2224/48227 , H01L2924/16195 , H01L2924/00014
摘要： A wafer level package for a surface acoustic wave (SAW) device and a fabrication method thereof. The SAW device wafer level package includes a SAW device in which a SAW element is formed on a top surface of a device wafer, a cap wafer which is bonded with a top surface of the SAW device and has a viahole penetrating the cap wafer, and a conductive member to fill a part of the viahole. The viahole has a first via portion and a second via portion, the first via portion has a gradually smaller diameter from a bottom surface of the cap wafer until a certain depth, and the second via portion has a gradually greater diameter from the first via portion until a top surface of the cap wafer.
摘要翻译：一种用于表面声波（SAW）器件的晶片级封装及其制造方法。 SAW器件晶片级封装包括SAW器件，其中SAW元件形成在器件晶片的顶表面上，盖晶片与SAW器件的顶表面结合并具有穿透盖晶片的通孔，以及用于填充通孔的一部分的导电构件。通孔具有第一通孔部分和第二通孔部分，第一通孔部分具有从盖子晶片的底表面到一定深度的逐渐变小的直径，并且第二通孔部分具有从第一通孔部分直到盖晶片的顶表面。

16. 发明授权

US08274198B2 Ultrasonic motor and conveying apparatus having the same 有权
标题翻译：超声波马达和具有相同的输送装置
公开(公告)号：US08274198B2
公开(公告)日：2012-09-25
申请号：US12574939
申请日：2009-10-07
申请人： Sunghyuk Park , Jin-woo Cho , Ji-hyuk Lim
发明人： Sunghyuk Park , Jin-woo Cho , Ji-hyuk Lim
IPC分类号： H02N2/12
CPC分类号： H02N2/08 , G02B7/08 , H02N2/163
摘要： An ultrasonic motor includes a fixed member including a surface, a movable member positioned to face the surface of the fixed member, and an actuator to cause at least a portion of the movable member to contact the surface of the fixed member and cause the movable member to move relative to the fixed member.
摘要翻译：超声波马达包括：固定部件，其包括表面，定位成与固定部件的表面相对的可动部件;以及致动器，使可动部件的至少一部分与固定部件的表面接触，使可动部件相对于固定构件移动。

17. 发明授权

US07741774B2 Backlight module including at least one luminescence element, and method of fabricating the same 有权
标题翻译：包括至少一个发光元件的背光模块及其制造方法
公开(公告)号：US07741774B2
公开(公告)日：2010-06-22
申请号：US11605295
申请日：2006-11-29
申请人： Seung-tae Choi , Ki-hwan Kwon , Su-ho Shin , Ji-hyuk Lim , Chang-youl Moon , Kyu-ho Shin
发明人： Seung-tae Choi , Ki-hwan Kwon , Su-ho Shin , Ji-hyuk Lim , Chang-youl Moon , Kyu-ho Shin
IPC分类号： H01J1/62
CPC分类号： H01J1/72 , G02F1/133603 , H01L24/95 , H01L25/0753 , H01L2224/24226 , H01L2224/95145 , H01L2924/12041 , H01L2924/00
摘要： A method of fabricating a backlight module in which at least one luminescence element is positioned, including: positioning a luminescence element in at least one cavity formed on a carrier; forming a lower electrode on a substrate; transferring the luminescence element positioned on the carrier to the substrate, connecting the luminescence element to a pattern of the lower electrode formed on the substrate, and removing the carrier; forming an insulating layer on a surface of the substrate to which the luminescence element is transferred, and exposing a top region of the luminescence element; and forming an upper electrode on the exposed top region of the luminescence element. Accordingly, the backlight module including very small luminescence elements being of a micro unit in size is easily fabricated.
摘要翻译：一种制造其中定位有至少一个发光元件的背光模块的方法，包括：将发光元件定位在形成在载体上的至少一个空腔中; 在基板上形成下电极; 将位于所述载体上的所述发光元件转移到所述基板上，将所述发光元件连接到形成在所述基板上的所述下电极的图案，以及移除所述载体; 在所述衬底的表面上形成绝缘层，所述衬底的所述发光元件被转移到所述衬底的表面上，并且暴露所述发光元件的顶部区域; 以及在所述发光元件的所述暴露的顶部区域上形成上部电极。因此，容易制造包括非常小尺寸的微小单元的发光元件的背光模块。

18. 发明申请

US20080067664A1 Cap wafer, semiconductor chip having the same, and fabrication method thereof 有权
标题翻译：盖晶片，具有相同的半导体芯片及其制造方法
公开(公告)号：US20080067664A1
公开(公告)日：2008-03-20
申请号：US11657056
申请日：2007-01-24
申请人： Ji-hyuk Lim , Jun-sik Hwang , Woon-bae Kim
发明人： Ji-hyuk Lim , Jun-sik Hwang , Woon-bae Kim
IPC分类号： H01L23/48
CPC分类号： B81B7/007 , B81B2207/095
摘要： A cap wafer, fabrication method, and a semiconductor chip are provided. The cap wafer includes a cap wafer substrate; a penetrated electrode formed to penetrate the cap wafer substrate; and an electrode pad connected with a lower portion of the penetrated electrode on a lower surface of the cap wafer substrate, wherein the penetrated electrode has an oblique section which gradually widens from an upper surface to the lower surface of the cap wafer substrate. The fabrication method includes forming an oblique-via hole on a lower surface of a cap wafer substrate, the oblique-via hole having an oblique section which gradually narrows in a direction moving away from the lower surface of the cap wafer substrate; and forming a penetrated electrode in the oblique-via hole. The semiconductor chip includes a base wafer; a cap wafer; a cavity; a penetrated electrode; and a pad bonding layer.
摘要翻译：提供盖晶片，制造方法和半导体芯片。盖晶片包括盖晶片基板; 形成为穿透盖晶片基板的穿透电极; 以及在所述盖片基板的下表面与所述被穿透电极的下部连接的电极焊盘，其中，所述被穿透电极具有从所述盖晶片基板的上表面向下表面逐渐变宽的倾斜部。该制造方法包括在盖晶片基板的下表面上形成倾斜通孔，该倾斜通孔具有在从盖晶片基板的下表面移开的方向上逐渐变窄的倾斜截面; 并且在所述倾斜通孔中形成穿透电极。半导体芯片包括基底晶片; 盖晶片; 一个空腔穿透电极; 和焊盘接合层。

19. 发明申请

US20070096227A1 Wafer level package for surface acoustic wave device and fabrication method thereof 有权
标题翻译：用于表面声波器件的晶片级封装及其制造方法
公开(公告)号：US20070096227A1
公开(公告)日：2007-05-03
申请号：US11415099
申请日：2006-05-02
申请人： Ji-hyuk Lim , Jun-sik Hwang , Woon-bae Kim , Suk-jin Ham , Jong-oh Kwon , Moon-chul Lee , Chang-youl Moon
发明人： Ji-hyuk Lim , Jun-sik Hwang , Woon-bae Kim , Suk-jin Ham , Jong-oh Kwon , Moon-chul Lee , Chang-youl Moon
IPC分类号： H01L29/84
CPC分类号： H03H9/1092
摘要： A wafer level package for a surface acoustic wave device and a fabrication method thereof include a SAW device formed with a SAW element on an upper surface of a device wafer; a cap wafer joined on an upper part of the SAW element; a cavity part housing the SAW element between the cap wafer and the SAW device; a cap pad formed on an upper surface of the cap wafer; and a metal line formed to penetrate through the cap wafer to electrically connect the cap pad and the SAW element, the device wafer and the cap wafer being made of the same materials.
摘要翻译：用于声表面波器件的晶片级封装及其制造方法包括在器件晶片的上表面上形成有SAW元件的SAW器件; 接合在所述SAW元件的上部的盖晶片; 在所述盖晶片和所述SAW器件之间容纳所述SAW元件的空腔部; 帽盖，形成在盖晶片的上表面上; 以及金属线，其形成为穿透盖晶片以电连接帽垫和SAW元件，器件晶片和盖晶片由相同的材料制成。

20. 发明申请

US20070085195A1 Wafer level packaging cap and fabrication method thereof 有权
标题翻译：晶圆级封装盖及其制造方法
公开(公告)号：US20070085195A1
公开(公告)日：2007-04-19
申请号：US11365838
申请日：2006-03-02
申请人： Moon-chul Lee , Jong-oh Kwon , Woon-bae Kim , Ji-hyuk Lim , Suk-jin Ham , Jun-sik Hwang , Chang-youl Moon
发明人： Moon-chul Lee , Jong-oh Kwon , Woon-bae Kim , Ji-hyuk Lim , Suk-jin Ham , Jun-sik Hwang , Chang-youl Moon
IPC分类号： H01L23/12
CPC分类号： B81C1/00301 , B81B2207/095 , H01L21/4817 , H01L21/50 , H01L2924/16235
摘要： A wafer level packaging cap for covering a device wafer with a device thereon and a fabrication method thereof are provided. The method includes operations of forming a plurality of connection grooves on a wafer, forming a seed layer on the connection grooves, forming connection parts by filling the connection grooves with a metal material, forming cap pads on a top surface of the wafer to be electrically connected to the connection parts, bonding a supporting film with the top surface of the wafer on which the cap pads are formed, forming a cavity on a bottom surface of the wafer to expose the connection parts through the cavity, and forming metal lines on the bottom surface of the wafer to be electrically connected to the connection parts.
摘要翻译：提供了一种用于在其上覆盖器件晶片的晶片级封装盖及其制造方法。该方法包括在晶片上形成多个连接槽的操作，在连接槽上形成种子层，通过用金属材料填充连接槽来形成连接部分，在晶片的顶表面上形成电极盖连接到连接部分，将支撑膜与其上形成有盖垫的晶片的顶表面接合，在晶片的底表面上形成空腔，以通过空腔露出连接部分，并在其上形成金属线晶片的底表面电连接到连接部分。

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