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11. 发明申请

US20070171575A1 Perpendicular magnetic recording medium with controlled damping property of soft magnetic underlayer 审中-公开
标题翻译：具有软磁性底层受阻阻尼特性的垂直磁记录介质
公开(公告)号：US20070171575A1
公开(公告)日：2007-07-26
申请号：US11657595
申请日：2007-01-25
申请人： Chee-kheng Lim , Eun-sik Kim , Hoon-sang Oh
发明人： Chee-kheng Lim , Eun-sik Kim , Hoon-sang Oh
IPC分类号： G11B23/03
CPC分类号： G11B5/7325
摘要： A perpendicular magnetic recording medium is provided. The perpendicular magnetic recording medium includes a soft magnetic underlayer, a recording layer formed on the soft magnetic underlayer, and a damping control layer which controls a damping constant of the soft magnetic underlayer.
摘要翻译：提供垂直磁记录介质。垂直磁记录介质包括软磁性底层，形成在软磁性底层上的记录层，以及控制软磁性底层阻尼常数的阻尼控制层。

12. 发明申请

US20070020487A1 Perpendicular recording medium having recording layer with controlled properties and method of manufacturing the perpendicular recording medium 审中-公开
标题翻译：具有受控特性的记录层的垂直记录介质和垂直记录介质的制造方法
公开(公告)号：US20070020487A1
公开(公告)日：2007-01-25
申请号：US11484692
申请日：2006-07-12
申请人： Chee-kheng Lim , No-yeol Park , Yong-su Kim , Hoon-sang Oh
发明人： Chee-kheng Lim , No-yeol Park , Yong-su Kim , Hoon-sang Oh
IPC分类号： G11B5/65 , B05D5/12
CPC分类号： G11B5/66 , G11B5/65 , G11B5/667 , G11B5/7379
摘要： Provided is a perpendicular magnetic recording medium. The perpendicular magnetic recording medium includes: a lower structure; and a recording layer formed on the lower structure, wherein the recording layer has a balancing force 2πMr2/K1 of 0.5 or less and a factor 4πMr/Hc of 0.8 or less where Mr denotes a remnant magnetization, K1 denotes a perpendicular magnetic anisotropy energy constant, and Hc denotes a coercive force. Accordingly, even though grain boundaries between grains that constitute the recording layer are somewhat non-uniform in width, the grains can have almost the same nucleation field. As a result, the perpendicular magnetic recording medium can ensure high recording density and stability of recorded information.
摘要翻译：提供了一种垂直磁记录介质。垂直磁记录介质包括：下结构; 以及形成在下部结构上的记录层，其中记录层具有0.5或更小的平衡力2piMr 2 / K 1和0.8或更小的因子4piMr / Hc，其中Mr表示残余磁化强度，K 1表示垂直磁各向异性能常数，Hc表示矫顽力。因此，即使构成记录层的晶粒之间的晶界在宽度上有些不均匀，晶粒也可以具有几乎相同的成核场。结果，垂直磁记录介质可以确保记录信息的高记录密度和稳定性。

13. 发明申请

US20060093865A1 Perpendicular magnetic recording media with laminated soft magnetic underlayer 失效
公开(公告)号：US20060093865A1
公开(公告)日：2006-05-04
申请号：US11259085
申请日：2005-10-27
申请人： Chee-kheng Lim , Yong-su Kim , Byung-kyu Lee , Hoon-sang Oh , Tae-hyo Lee
发明人： Chee-kheng Lim , Yong-su Kim , Byung-kyu Lee , Hoon-sang Oh , Tae-hyo Lee
IPC分类号： G11B5/66
CPC分类号： G11B5/66 , G11B5/653 , G11B5/656 , G11B5/667
摘要： A recording medium including a perpendicular magnetic recording layer and a laminated SUL formed on a substrate is provided. The SUL includes an antiferromagnetic layer interposed between laminated structures including a magnetic layer, a non-magnetic layer and a magnetic layer. The layers may each have a thickness of 20 nm or less and the layers below the antiferromagnetic layer may be thinner than the layers on the antiferromagnetic layer. The laminated structures formed on and below the antiferromagnetic layer have unidirectional magnetic anisotropies set in the opposite radial direction to each other by an exchange bias. As a result, media magnetic domain noise can be diminished.

14. 发明授权

US08349527B2 Conductive layer including implanted metal ions 有权
标题翻译：导电层包括植入金属离子
公开(公告)号：US08349527B2
公开(公告)日：2013-01-08
申请号：US13113534
申请日：2011-05-23
申请人： Hae-sung Kim , Hyoung-soo Ko , Seung-bum Hong , Jin-seung Sohn , Sung-hoon Choa , Chee-kheng Lim
发明人： Hae-sung Kim , Hyoung-soo Ko , Seung-bum Hong , Jin-seung Sohn , Sung-hoon Choa , Chee-kheng Lim
IPC分类号： G03F1/00
CPC分类号： G03F1/14 , B29C59/002 , B82Y10/00 , B82Y40/00 , G03F7/0002 , Y10T428/24917
摘要： A nano imprint master and a method of manufacturing the same are provided. The method includes: implanting conductive metal ions into a substrate including quartz to form a conductive layer inside the quartz substrate; coating a resist on the quartz substrate in which the conductive layer is formed, to form a resist coating layer; exposing the resist coating layer to an electron beam to form micropatterns; etching the quartz substrate by using the resist coating layer, in which the micropatterns are formed, as a mask; and removing the resist coating layer to obtain a master in which micropatterns are formed.
摘要翻译：提供了纳米压印母版及其制造方法。该方法包括：将导电金属离子注入包括石英的衬底中，以在石英衬底内形成导电层; 在其上形成导电层的石英基板上涂覆抗蚀剂，以形成抗蚀剂涂层; 将抗蚀剂涂层暴露于电子束以形成微图案; 通过使用其中形成有微图案的抗蚀剂涂层作为掩模来蚀刻石英基板; 并除去抗蚀剂涂层以获得形成微图案的母版。

15. 发明授权

US07672081B2 Perpendicular magnetic recording head 失效
标题翻译：垂直磁记录头
公开(公告)号：US07672081B2
公开(公告)日：2010-03-02
申请号：US11503296
申请日：2006-08-14
申请人： Chee-kheng Lim , Eun-sik Kim , Yong-su Kim
发明人： Chee-kheng Lim , Eun-sik Kim , Yong-su Kim
IPC分类号： G11B5/127
CPC分类号： G11B5/012 , G11B5/1278 , G11B5/3116 , G11B5/3146 , G11B2005/0029
摘要： A perpendicular magnetic recording head which moves in a track direction of a recording layer of a perpendicular magnetic recording medium to write information on the recording layer or read information from the recording layer. The perpendicular magnetic recording head includes: the perpendicular magnetic recording medium including a soft magnetic underlayer and the recording layer; a write head including a main pole that applies a magnetic field to, and writes information to, the recording layer and a return pole having a first end which is connected to the main pole and having a second end which is spaced apart from the main pole over an air bearing surface (ABS) of the perpendicular magnetic recording head which is adjacent to the recording layer; and a permanent magnet formed on at least one side of the write head.
摘要翻译：垂直磁记录头，其在垂直磁记录介质的记录层的轨道方向上移动以在记录层上写入信息或从记录层读取信息。垂直磁记录头包括：包括软磁性底层和记录层的垂直磁记录介质; 写头，其包括向记录层施加磁场并向其写入信息的主极;以及返回极，其具有连接到主极的第一端，并且具有与主极间隔开的第二端在与记录层相邻的垂直磁记录头的空气轴承表面（ABS）上; 以及形成在所述写入头的至少一侧上的永磁体。

16. 发明授权

US07652906B2 Memory device employing magnetic domain wall movement 有权
标题翻译：采用磁畴壁运动的记忆装置
公开(公告)号：US07652906B2
公开(公告)日：2010-01-26
申请号：US11851049
申请日：2007-09-06
申请人： Chee-kheng Lim , Eun-sik Kim , Sung-chul Lee
发明人： Chee-kheng Lim , Eun-sik Kim , Sung-chul Lee
IPC分类号： G11C19/00
CPC分类号： G11C11/14 , G11C19/0808 , G11C19/0816 , G11C19/0841 , Y10S977/933
摘要： Provided is a memory device employing magnetic domain wall movement. The memory device includes a first track, an interconnecting layer, and a second track. The first track including a magnetic material is formed in a first direction. The interconnecting layer is formed on the first track. The second track including a magnetic material is formed in a second direction on the interconnecting layer.
摘要翻译：提供了采用磁畴壁运动的存储器件。存储器件包括第一轨道，互连层和第二轨道。包括磁性材料的第一轨迹形成在第一方向上。互连层形成在第一轨道上。包括磁性材料的第二轨道在互连层上沿第二方向形成。

17. 发明申请

US20080144217A1 PATTERNED MAGNETIC RECORDING MEDIUM AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：图形磁记录介质及其制造方法
公开(公告)号：US20080144217A1
公开(公告)日：2008-06-19
申请号：US11861348
申请日：2007-09-26
申请人： Myung-bok LEE , Jin-seung Sohn , Chee-kheng Lim
发明人： Myung-bok LEE , Jin-seung Sohn , Chee-kheng Lim
IPC分类号： G11B5/74 , G11B23/00
CPC分类号： G11B5/82 , B82Y10/00 , G11B5/656 , G11B5/66 , G11B5/743 , G11B5/855 , G11B5/858
摘要： Provided are a patterned magnetic recording medium and a method of manufacturing the same. The patterned magnetic recording medium include: a substrate; and a plurality of magnetic recording layers arranged at predetermined intervals, wherein the magnetic recording layers are formed of an alloy including Co, Pt, and Ni. The patterned medium having the magnetic recording layers have an excellent read/write characteristic and high corrosion resistance and recording density.
摘要翻译：提供图案化的磁记录介质及其制造方法。图案化的磁记录介质包括：基底; 以及以预定间隔布置的多个磁记录层，其中磁记录层由包括Co，Pt和Ni的合金形成。具有磁记录层的图案化介质具有优异的读/写特性和高耐蚀性和记录密度。

18. 发明申请

US20070206405A1 Multi-bit magnetic memory device using spin-polarized current and methods of manufacturing and operating the same 有权
标题翻译：使用自旋极化电流的多位磁存储器件及其制造和操作方法
公开(公告)号：US20070206405A1
公开(公告)日：2007-09-06
申请号：US11347228
申请日：2006-02-06
申请人： Chee-kheng Lim , Yong-su Kim
发明人： Chee-kheng Lim , Yong-su Kim
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , B82Y10/00 , G11C11/16 , G11C11/5607 , H01L27/228
摘要： A multi-bit magnetic memory device using a spin-polarized current and methods of manufacturing and operating the same. The magnetic memory device includes a switching device and a magnetic storage node connected to the switching device, wherein the magnetic storage node includes a first magnetic layer, a second magnetic layer and a free magnetic layer which are vertically and separately disposed from one another. The first and second magnetic layer have transmission characteristics opposite to each other for spin-polarized electrons, and have magnetic polarizations that are opposite to each other. The free magnetic layer may include first and second free magnetic layers, which are separately disposed from each other. The magnetic storage node may further include third and fourth magnetic layers that are separately disposed between the first and second free magnetic layers.
摘要翻译：使用自旋极化电流的多位磁存储器件及其制造和操作方法。磁存储器件包括连接到开关器件的开关器件和磁存储节点，其中磁存储节点包括彼此垂直且分开设置的第一磁性层，第二磁性层和自由磁性层。第一和第二磁性层对于自旋极化电子具有彼此相反的传输特性，并且具有彼此相反的磁极化。自由磁性层可以包括彼此分开设置的第一和第二自由磁性层。磁存储节点还可以包括分开设置在第一和第二自由磁性层之间的第三和第四磁性层。

19. 发明授权

US08231987B2 Magnetic domain data storage devices and methods of manufacturing the same 有权
标题翻译：磁畴数据存储装置及其制造方法
公开(公告)号：US08231987B2
公开(公告)日：2012-07-31
申请号：US12000243
申请日：2007-12-11
申请人： Chee-kheng Lim
发明人： Chee-kheng Lim
IPC分类号： G11B5/66
CPC分类号： G11C19/0808 , G11C11/14
摘要： Example embodiments may provide data storage devices using movement of magnetic domain walls including a first magnetic layer having at least two magnetic domains with determinable magnetization directions, and/or a soft second magnetic layer formed on a lower surface of the first magnetic layer. Magnetic domain walls may be moved even in curved regions of the first magnetic layer.
摘要翻译：示例性实施例可以使用包括具有至少两个具有可确定的磁化方向的磁畴的第一磁性层和/或形成在第一磁性层的下表面上的软的第二磁性层的磁畴壁的移动来提供数据存储装置。即使在第一磁性层的弯曲区域中，也可以移动磁畴壁。

20. 发明授权

US08054666B2 Information storage devices using magnetic domain wall movement and methods of manufacturing the same 失效
标题翻译：使用磁畴壁运动的信息存储装置及其制造方法相同
公开(公告)号：US08054666B2
公开(公告)日：2011-11-08
申请号：US11980553
申请日：2007-10-31
申请人： Chee-kheng Lim
发明人： Chee-kheng Lim
IPC分类号： G11C19/00
CPC分类号： G11C11/14 , G11C19/0808 , Y10S977/933 , Y10S977/935
摘要： In an information storage device, a writing magnetic layer is formed on a substrate and has a magnetic domain wall. A connecting magnetic layer is formed on the writing magnetic layer, and an information storing magnetic layer is formed on an upper portion of side surfaces of the connecting magnetic layer. A reader reads information stored in the information storing magnetic layer.
摘要翻译：在信息存储装置中，写入磁性层形成在基板上并具有磁畴壁。在写入磁性层上形成连接磁性层，在连接磁性层的侧面上部形成信息存储磁性层。读取器读取存储在信息存储磁性层中的信息。

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