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11. 发明授权

US08729587B2 Nitride semiconductor element and manufacturing method therefor 有权
标题翻译：氮化物半导体元件及其制造方法
公开(公告)号：US08729587B2
公开(公告)日：2014-05-20
申请号：US13596849
申请日：2012-08-28
申请人： Toshiya Yokogawa , Mitsuaki Oya , Atsushi Yamada , Ryou Kato
发明人： Toshiya Yokogawa , Mitsuaki Oya , Atsushi Yamada , Ryou Kato
IPC分类号： H01L33/30 , H01L33/50
CPC分类号： H01L33/40 , B82Y20/00 , H01L29/045 , H01L33/0075 , H01L33/0079 , H01L33/16 , H01L33/32 , H01L2933/0016 , H01S5/0425 , H01S5/32341
摘要： An exemplary nitride-based semiconductor device includes: a nitride-based semiconductor multilayer structure 20 which has a p-type GaN-based semiconductor region whose surface 12 is inclined from the m-plane by an angle of not less than 1° and not more than 5° or the principal surface has a plurality of m-plane steps; and an electrode 30 that is arranged on the p-type GaN-based semiconductor region. The electrode 30 includes a Mg alloy layer 32 which is formed from Mg and metal selected from a group consisting of Pt, Mo, and Pd. The Mg alloy layer 32 is in contact with the surface 12 of the p-type GaN-based semiconductor region of the semiconductor multilayer structure 20.
摘要翻译：示例性的基于氮化物的半导体器件包括：氮化物基半导体多层结构20，其具有p型GaN基半导体区域，其表面12从m面倾斜不小于1°的角度，而不是更多超过5°或主表面具有多个m平面步骤; 以及布置在p型GaN基半导体区域上的电极30。电极30包括由Mg和选自Pt，Mo和Pd的金属形成的Mg合金层32。 Mg合金层32与半导体多层结构体20的p型GaN类半导体区域的表面12接触。

12. 发明授权

US08669592B2 Compound semiconductor device and method for fabricating the same 有权
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：US08669592B2
公开(公告)日：2014-03-11
申请号：US13551775
申请日：2012-07-18
申请人： Toyoo Miyajima , Kenji Imanishi , Atsushi Yamada , Norikazu Nakamura
发明人： Toyoo Miyajima , Kenji Imanishi , Atsushi Yamada , Norikazu Nakamura
IPC分类号： H01L29/66
CPC分类号： H01L29/045 , H01L29/1066 , H01L29/2003 , H01L29/517 , H01L29/66462 , H01L29/7787
摘要： A compound semiconductor multilayer structure is formed on a Si substrate. The compound semiconductor multilayer structure includes an electrode transit layer, an electrode donor layer formed above the electron transit layer, and a cap layer formed above the electron donor layer. The cap layer contains a first crystal polarized in the same direction as the electron transit layer and the electron donor layer and a second crystal polarized in the direction opposite to the polarization direction of the electron transit layer and the electron donor layer.
摘要翻译：在Si衬底上形成化合物半导体多层结构。化合物半导体多层结构包括电极转移层，形成在电子转移层上方的电极施主层和形成在电子供体层上方的覆盖层。盖层包含沿与电子转移层和电子供体层相同的方向偏振的第一晶体和在与电子转移层和电子供体层的偏振方向相反的方向偏振的第二晶体。

13. 发明授权

US08507949B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08507949B2
公开(公告)日：2013-08-13
申请号：US13195190
申请日：2011-08-01
申请人： Masato Nishimori , Atsushi Yamada
发明人： Masato Nishimori , Atsushi Yamada
IPC分类号： H01L29/66
CPC分类号： H01L29/66431 , H01L29/0657 , H01L29/2003 , H01L29/4175 , H01L29/66462 , H01L29/7787
摘要： A semiconductor device includes a substrate, a carrier transit layer disposed above the substrate, a compound semiconductor layer disposed on the carrier transit layer, a source electrode disposed on the compound semiconductor layer, a first groove disposed from the back of the substrate up to the inside of the carrier transit layer while penetrating the substrate, a drain electrode disposed in the inside of the first groove, a gate electrode located between the source electrode and the first groove and disposed on the compound semiconductor layer, and a second groove located diagonally under the source electrode and between the source electrode and the first groove and disposed from the back of the substrate up to the inside of the carrier transit layer while penetrating the substrate.
摘要翻译：半导体器件包括衬底，设置在衬底上的载流子迁移层，设置在载流子迁移层上的化合物半导体层，设置在化合物半导体层上的源电极，从衬底的背面设置到第一沟槽在穿过基板的载体转移层的内部，设置在第一槽的内部的漏电极，位于源电极和第一槽之间并设置在化合物半导体层上的栅极，以及位于对角线下方的第二槽源电极和源电极与第一沟槽之间，并且在穿透衬底的同时从衬底的背面直到载体转运层的内部布置。

14. 发明授权

US08334199B2 Method for fabricating nitride-based semiconductor device having electrode on m-plane 有权
标题翻译：一种在m面上具有电极的氮化物基半导体器件的制造方法
公开(公告)号：US08334199B2
公开(公告)日：2012-12-18
申请号：US12937758
申请日：2010-03-17
申请人： Mitsuaki Oya , Toshiya Yokogawa , Atsushi Yamada , Akihiro Isozaki
发明人： Mitsuaki Oya , Toshiya Yokogawa , Atsushi Yamada , Akihiro Isozaki
IPC分类号： H01L21/3205
CPC分类号： H01L21/28575 , H01L33/16 , H01L33/32 , H01L33/40
摘要： A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and an Ag layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
摘要翻译：氮化物系半导体发光装置100具备：具有m面面12的GaN衬底10; 设置在GaN衬底10的m面表面12上的半导体多层结构20; 以及设置在半导体多层结构体20上的电极30.电极30包括Zn层32和设置在Zn层32上的Ag层34.Zn层32与p型半导体区域的表面接触半导体多层结构20。

15. 发明授权

US08306085B2 Nitride compound semiconductor element and method for manufacturing same 有权
标题翻译：氮化物半导体元件及其制造方法
公开(公告)号：US08306085B2
公开(公告)日：2012-11-06
申请号：US13234326
申请日：2011-09-16
申请人： Yoshiaki Hasegawa , Toshiya Yokogawa , Atsushi Yamada , Yoshiaki Matsuda
发明人： Yoshiaki Hasegawa , Toshiya Yokogawa , Atsushi Yamada , Yoshiaki Matsuda
IPC分类号： H01S5/10
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/78 , H01L33/0095 , H01S5/0202 , H01S5/22 , H01S5/2201 , Y10S148/028
摘要： The present invention is directed to a production method for a nitride compound semiconductor element including a substrate and a multilayer structure 40 supported by an upper face of the substrate. First, a wafer 1 to be split into individual substrates is provided. A plurality of semiconductor layers composing the multilayer structure 40 are grown on the wafer 1. By cleaving the wafer 1 and the semiconductor layers, a cleavage plane in the multilayer structure 40 is formed. In the present invention, a plurality of voids are arranged at positions in the multilayer structure at which a cleavage plane is to be formed. Thus, cleavage can be performed with a good yield.
摘要翻译：本发明涉及一种氮化物化合物半导体元件的制造方法，所述氮化物化合物半导体元件包括由所述基板的上表面支撑的基板和多层结构体40。首先，设置分割成各个基板的晶片1。构成多层结构40的多个半导体层在晶片1上生长。通过切割晶片1和半导体层，形成多层结构40中的解理面。在本发明中，在形成有解理面的多层结构体的位置配置多个空隙。因此，可以以良好的产率进行裂解。

16. 发明授权

US08284071B2 Door assembly including a touch sensitive portion for controlling automated door movement 有权
标题翻译：门组件包括用于控制自动门移动的触敏部分
公开(公告)号：US08284071B2
公开(公告)日：2012-10-09
申请号：US12092155
申请日：2006-09-12
申请人： Pei-Yuan Peng , Jaime A. Rivera , Atsushi Yamada , Takashi Saiki
发明人： Pei-Yuan Peng , Jaime A. Rivera , Atsushi Yamada , Takashi Saiki
IPC分类号： G08B21/00
CPC分类号： B66B13/26
摘要： An assembly (20) for controlling movement of an automatically moveable door panel (22) includes a sensor (30, 32, 34) positioned on at least one of a door panel (22) or a door frame member (24, 26). The sensitive portion provides an indication of when an object is in contact with or in very close proximity to a sensitive portion. A sensitive portion is established over an area of the door or door frame member at which an object may become caught during automated door movement. A disclosed example includes using an electromechanical film as a sensor so that the sensitive portion is responsive to pressure applied by the object on the sensitive portion. Another disclosed example includes a field effect sensor that generates an electric field that is at least partially interrupted when an object contacts or comes in very close proximity to the sensitive portion. Automated movement of a door is controlled responsive to an indication of the presence of an object in a location where the object may become caught during automatic movement of the door.
摘要翻译：用于控制可自动移动的门板（22）的运动的组件（20）包括定位在门板（22）或门框架构件（24,26）中的至少一个上的传感器（30,32,34）。敏感部分提供对象何时与敏感部分接触或非常接近敏感部分的指示。在门或门框构件的区域内建立敏感部分，在自动门移动期间物体可能被卡住。所公开的示例包括使用机电膜作为传感器，使得敏感部分响应于物体在敏感部分上施加的压力。另一个公开的示例包括场效应传感器，其产生当物体接触或非常接近敏感部分时至少部分中断的电场。响应于在门的自动移动期间物体可能被卡住的位置处的物体的存在的指示来控制门的自动运动。

17. 发明申请

US20120111671A1 DOUBLE-DECK ELEVATOR 有权
标题翻译：双层电梯
公开(公告)号：US20120111671A1
公开(公告)日：2012-05-10
申请号：US13383587
申请日：2009-12-09
申请人： Atsushi Yamada , Yasuhiro Goto
发明人： Atsushi Yamada , Yasuhiro Goto
IPC分类号： B66B9/00
CPC分类号： B66B11/022 , B66F7/0666
摘要： To provide a double-deck elevator characterized by the fact that by increasing the story height adjustment range in the direction in which the two cars approach each other, it is possible to increase the degree of building design freedom. Two up/down cars (6), (7) arranged in outer frame (5) are connected with each other by means of pantographic mechanisms (11) that can effect an expansion and contraction operation, and the two cars (6), (7) are driven to move towards each other or away from each other by means of pantographic mechanisms (11). The pantographic mechanisms (11) are arranged in the spaces between vertical beams (5a) and the two cars (6), (7) and each has a pivot point at the longitudinal central portion of vertical beams (5a) extending vertically in outer frame (5). Due to the pantographic mechanisms (11), the story height adjustment range in the direction in which the two cars (6), (7) approach each other is not restricted.
摘要翻译：提供一种双层电梯，其特征在于，通过增加两车彼此接近的方向的故事高度调节范围，可以增加建筑物设计自由度。布置在外框架（5）中的两个上下车（6），（7）通过能够进行膨胀和收缩操作的缩放机构（11）彼此连接，并且两个轿厢（6），（ 7）通过缩放机构（11）被驱动以彼此移动或彼此远离。集电机构（11）布置在垂直梁（5a）和两车厢（6），（7）之间的空间中，并且每个在垂直梁（5a）的纵向中心部分具有在外框架中垂直延伸的枢轴点（5）。由于集合机构（11），两车（6），（7）彼此接近的方向的故事高度调节范围不受限制。

18. 发明授权

US08159913B2 Optical disc recording apparatus and recording power control method 有权
标题翻译：光盘记录装置和记录功率控制方法
公开(公告)号：US08159913B2
公开(公告)日：2012-04-17
申请号：US11581758
申请日：2006-10-17
申请人： Tomoya Hoshi , Atsushi Yamada , Tooru Kawashima , Mitsuhiro Nishidate , Tsuyoshi Toda , Koichiro Nishimura
发明人： Tomoya Hoshi , Atsushi Yamada , Tooru Kawashima , Mitsuhiro Nishidate , Tsuyoshi Toda , Koichiro Nishimura
IPC分类号： G11B7/00
CPC分类号： G11B7/1267 , G11B7/0055
摘要： It is to provide an optical disc recording apparatus and a recording power control method that are adapted to high-speed recording and can set an optimal erasing power with high accuracy. A test writing signal detector reproduces a test writing signal of a predetermined mark length or space length with varied power, and detects the number of error mark signals and an amplitude value of an envelope. A controller obtains a first threshold Pe0 of the erasing power based on the number of error mark signals in a region where laser power is low, and obtains a second threshold Pe1 of the erasing power based on the amplitude value in a region where the laser power is high. Then, the controller sets an optimal value of the erasing power from an average value of the first and second thresholds.
摘要翻译：本发明提供适用于高速记录的光盘记录装置和记录功率控制方法，并能够高精度地设定最佳擦除功率。测试写入信号检测器以变化的功率再现预定标记长度或空格长度的测试写入信号，并且检测错误标记信号的数量和信封的振幅值。控制器基于激光功率低的区域中的误差信号的数量获得擦除功率的第一阈值Pe0，并且基于激光功率的区域中的振幅值获得擦除功率的第二阈值Pe1 高。然后，控制器根据第一和第二阈值的平均值设置擦除功率的最佳值。

19. 发明授权

US08143649B2 Compound semiconductor device and manufacturing method of the same 有权
公开(公告)号：US08143649B2
公开(公告)日：2012-03-27
申请号：US12618384
申请日：2009-11-13
申请人： Tadahiro Imada , Atsushi Yamada
发明人： Tadahiro Imada , Atsushi Yamada
IPC分类号： H01L29/778 , H01L21/335
摘要： An i-GaN layer (electron transit layer), an n-GaN layer (compound semiconductor layer) formed over the i-GaN layer (electron transit layer), and a source electrode, a drain electrode and a gate electrode formed over the n-GaN layer (compound semiconductor layer) are provided. A recess portion is formed inside an area between the source electrode and the drain electrode of the n-GaN layer (compound semiconductor layer) and at a portion separating from the gate electrode.

20. 外观设计

USD646219S1 Tread portion of an automobile tire 有权
公开(公告)号：USD646219S1
公开(公告)日：2011-10-04
申请号：US29344058
申请日：2009-09-23
申请人： Yasutaka Suda , Atsushi Yamada
设计人： Yasutaka Suda , Atsushi Yamada

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