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    • 12. 发明授权
    • Resonant pressure sensor and method of manufacturing the same
    • 共振压力传感器及其制造方法
    • US09003889B2
    • 2015-04-14
    • US13593311
    • 2012-08-23
    • Yuusaku YoshidaTakashi YoshidaHiroshi SuzukiShuhei YoshitaHisashi Terashita
    • Yuusaku YoshidaTakashi YoshidaHiroshi SuzukiShuhei YoshitaHisashi Terashita
    • G01L11/00G01L9/00
    • G01L9/0016G01L9/0045
    • A resonant pressure sensor including one or more resonant-type strain gauges arranged on a diaphragm may include a sensor substrate made of silicon and including one surface on which one or more resonant-type strain gauge elements are arranged and the other surface which is polished to have a thickness corresponding to the diaphragm, a base substrate made of silicon and including one surface directly bonded with the other surface of the sensor substrate, a concave portion formed in a portion of the base substrate bonding with the sensor substrate, substantially forming the diaphragm in the sensor substrate, and including a predetermined gap that does not restrict a movable range of the diaphragm due to foreign substances and suppresses vibration of the diaphragm excited by vibration of the resonant-type strain gauge elements, one or more conducting holes, and a fluid.
    • 包括设置在隔膜上的一个或多个谐振型应变计的共振压力传感器可以包括由硅制成的传感器基板,并且包括一个表面,一个表面上布置有一个或多个谐振型应变计元件,另一个表面抛光到 具有对应于隔膜的厚度,由硅制成的基底基板,其包括与传感器基板的另一表面直接接合的一个表面;凹部,形成在与传感器基板接合的基底部分的一部分中,基本上形成隔膜 并且包括预定的间隙,其不会由于异物而限制隔膜的可移动范围,并且抑制由共振型应变计元件的振动激励的隔膜的振动,一个或多个导电孔和 流体。
    • 13. 发明授权
    • Process for producing solvent-soluble reactive polysiloxanes
    • 制备溶剂可溶性活性聚硅氧烷的方法
    • US08952117B2
    • 2015-02-10
    • US13996828
    • 2011-12-14
    • Akinori KitamuraNaomasa FurutaHiroshi Suzuki
    • Akinori KitamuraNaomasa FurutaHiroshi Suzuki
    • C08G77/06C08G77/20C08K5/103
    • C08K5/103C08G77/06C08G77/20
    • The present invention is a method for producing solvent-soluble polysiloxanes which includes a condensation process of subjecting a raw material having siloxane-bond-forming groups to hydrolytic copolycondensation in the presence of a catalyst to synthesize a reactive polysiloxane represented by general formula (1), the raw material containing both an organosilicon compound (S1) having a (meth)acryloyl group and siloxane-bond-forming groups and at least one silicon compound (S2) selected from among tetraalkoxysilanes and tetrahalogenosilanes, wherein in the condensation process, the organosilicon compound (S1) and silicon compound (S2) are used at a (S2)/(S1) molar ratio of 1.8 or less, and the condensation process is conducted by adding gradually a mixture of the silicon compound (S2) and the catalyst to a raw material liquid containing the organosilicon compound (S1) and water, while keeping the molar ratio of the amount of the silicon compound (S2) to the amount of the organosilicon compound (S1) within the range of 0.001/min to 0.3/min.
    • 本发明是一种溶剂可溶性聚硅氧烷的制造方法,其包括在催化剂存在下使具有硅氧烷键形成基团的原料进行水解共缩聚的缩合方法,合成由通式(1)表示的反应性聚硅氧烷, ,含有具有(甲基)丙烯酰基的有机硅化合物(S1)和硅氧烷键形成基团的原料和选自四烷氧基硅烷和四卤代硅烷中的至少一种硅化合物(S2),其中在缩合过程中,将有机硅 化合物(S1)和硅化合物(S2)以(S2)/(S1)摩尔比为1.8以下使用,缩合工序通过将硅化合物(S2)和催化剂的混合物逐渐加入到 含有有机硅化合物(S1)和水的原料液体,同时保持硅化合物(S2)的量与有机硅的量 化合物(S1)在0.001 / min至0.3 / min的范围内。
    • 17. 发明授权
    • Semiconductor device and electric power conversion system using the same
    • 半导体装置和电力转换系统采用相同的方式
    • US08653588B2
    • 2014-02-18
    • US13553431
    • 2012-07-19
    • So WatanabeMasaki ShiraishiHiroshi SuzukiMutsuhiro Mori
    • So WatanabeMasaki ShiraishiHiroshi SuzukiMutsuhiro Mori
    • H01L29/66
    • H01L29/7397H01L29/0696H01L29/407H01L29/66348
    • A semiconductor device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type on the first semiconductor layer; trenches in the first semiconductor layer; a semiconductor protruding part on the first semiconductor layer; a third semiconductor layer on the semiconductor protruding part; a fourth semiconductor layer on the third semiconductor layer; a gate insulating layer disposed along the trench; a first interlayer insulating layer disposed along the trench; a first conductive layer facing to the fourth semiconductor layer; a second conductive layer on the first interlayer insulating layer; a second interlayer insulating layer covering the second conductive layer; a third conductive layer on the third semiconductor layer and fourth semiconductor layer; a contacting part connecting the third conductive layer and third semiconductor layer; and a fourth conductive layer formed on the second semiconductor layer.
    • 半导体器件包括:第一导电类型的第一半导体层; 在第一半导体层上的第二导电类型的第二半导体层; 第一半导体层中的沟槽; 在所述第一半导体层上的半导体突出部; 半导体突出部分上的第三半导体层; 第三半导体层上的第四半导体层; 栅极绝缘层,沿着沟槽设置; 沿沟槽设置的第一层间绝缘层; 面向第四半导体层的第一导电层; 在第一层间绝缘层上的第二导电层; 覆盖所述第二导电层的第二层间绝缘层; 在第三半导体层和第四半导体层上的第三导电层; 连接第三导电层和第三半导体层的接触部分; 以及形成在所述第二半导体层上的第四导电层。
    • 18. 发明申请
    • DISK ARRAY SYSTEM AND CONNECTION METHOD
    • 磁盘阵列系统和连接方法
    • US20140025886A1
    • 2014-01-23
    • US13575224
    • 2012-07-17
    • Tomoki TanoueHiroshi SuzukiTetsuya Inoue
    • Tomoki TanoueHiroshi SuzukiTetsuya Inoue
    • G06F12/08
    • G06F11/201G06F11/1076G06F11/2089G06F2211/1059
    • According to the conventional art disk array system, when a drive box of a first chassis is blocked, all the drive boxes of a second chassis connected subsequently therefrom will be blocked, and the data in the drive boxes arranged subsequently therefrom cannot be recovered based on the RAID configuration. Even if the data could be recovered based on RAID configuration, it is necessary to perform the recovery process based on RAID in all the subsequently arranged drive boxes, according to which the performance is deteriorated. The present system stores a first drive box in a first chassis out of a plurality of chassis, and a second drive box and a third drive box are stored in a second chassis. One of a plurality of expander controllers within the first drive box is connected to an expander controller in the second drive box, and the other expander controller is connected to an expander controller in the third drive box.
    • 根据传统技术的磁盘阵列系统,当第一机箱的驱动箱被阻挡时,与其后连接的第二底盘的所有驱动箱将被阻挡,并且随后安排的驱动箱中的数据不能基于 RAID配置。 即使可以根据RAID配置恢复数据,因此有必要在所有后续排列的驱动器盒中执行基于RAID的恢复过程,从而使性能恶化。 本系统将第一驱动箱存储在多个机架中的第一机架中,并且第二驱动箱和第三驱动箱被存储在第二机架中。 第一驱动箱内的多个扩展器控制器中的一个连接到第二驱动箱中的扩展器控制器,另一个扩展器控制器连接到第三驱动箱中的扩展器控制器。
    • 19. 发明申请
    • PROCESS FOR PRODUCING SOLVENT-SOLUBLE REACTIVE POLYSILOXANES
    • 生产溶剂型可溶性反应性聚硅氧烷的方法
    • US20130338282A1
    • 2013-12-19
    • US13996828
    • 2011-12-14
    • Akinori KitamuraNaomasa FurutaHiroshi Suzuki
    • Akinori KitamuraNaomasa FurutaHiroshi Suzuki
    • C08G77/20C08K5/103
    • C08K5/103C08G77/06C08G77/20
    • The present invention is a method for producing solvent-soluble polysiloxanes which includes a condensation process of subjecting a raw material having siloxane-bond-forming groups to hydrolytic copolycondesation in the presence of a catalyst to synthesize a reactive polysiloxane represented by general formula (1), the raw material containing both an organosilicon compound (S1) having a (meth)acryloyl group and siloxane-bond-forming groups and at least one silicon compound (S2) selected from among tetraalkoxysilanes and tetrahalogenosilanes, wherein in the condensation process, the organosilicon compound (S1) and silicon compound (S2) are used at a (S2)/(S1) molar ratio of 1.8 or less, and the condensation process is conducted by adding gradually a mixture of the silicon compound (S2) and the catalyst to a raw material liquid containing the organosilicon compound (S1) and water, while keeping the molar ratio of the amount of the silicon compound (S2) to the amount of the organosilicon compound (S1) within the range of 0.001/min to 0.3/min.
    • 本发明是一种溶剂可溶性聚硅氧烷的制造方法,其包括在催化剂存在下使具有硅氧烷键形成基团的原料进行水解共解聚的缩合方法,合成由通式(1)表示的反应性聚硅氧烷, ,含有具有(甲基)丙烯酰基的有机硅化合物(S1)和硅氧烷键形成基团的原料和选自四烷氧基硅烷和四卤代硅烷中的至少一种硅化合物(S2),其中在缩合过程中,将有机硅 化合物(S1)和硅化合物(S2)以(S2)/(S1)摩尔比为1.8以下使用,缩合工序通过将硅化合物(S2)和催化剂的混合物逐渐加入到 含有有机硅化合物(S1)和水的原料液体,同时保持硅化合物(S2)的量与有机硅的量 化合物(S1)在0.001 / min至0.3 / min的范围内。