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11. 发明授权

US08696813B2 Method of manufacturing silicon single crystal, apparatus for pulling silicon single crystal and vitreous silica crucible 有权
标题翻译：硅单晶的制造方法，硅单晶拉丝装置和玻璃状石英坩埚
公开(公告)号：US08696813B2
公开(公告)日：2014-04-15
申请号：US12786911
申请日：2010-05-25
申请人： Masanori Fukui , Hideki Watanabe , Nobumitsu Takase
发明人： Masanori Fukui , Hideki Watanabe , Nobumitsu Takase
IPC分类号： C30B15/04
CPC分类号： C30B15/20 , C30B15/10 , C30B29/06
摘要： Leakage of silicon melt is monitored and touch of a seed crystal at the silicon melt is detected, and in addition, reinforcement of a vitreous silica crucible to be endurable during pulling for a long time and decrease of impurity concentration of a silicon single crystal can be expected. A method for manufacturing a silicon single crystal is provided. The method includes: detecting touching status of a seed crystal at silicon melt by supplying voltage V1 using a crucible side as a negative electrode and a wire side as a positive electrode and by monitoring change of the voltage, when the seed crystal provided at a front end of the wire touches the silicon melt inside a vitreous silica crucible; devitrifying an inner surface of the vitreous silica crucible as supplying voltage V2 using the crucible side as a positive electrode and the wire side as a negative electrode during a temperature control period; and growing a silicon single crystal by slowly pulling the seed crystal as supplying voltage V3 using the crucible side as a negative electrode and the wire side as a positive electrode after the temperature control period.
摘要翻译：监测硅熔体的泄漏，并检测硅熔体中的晶种的接触，此外，长时间拉伸和降低硅单晶的杂质浓度可以耐久的石英玻璃坩埚的增强可以是预期。提供了制造硅单晶的方法。该方法包括：通过使用坩埚侧作为负极并且线侧作为正极来提供电压V1，并通过监视电压的变化来检测硅熔体处的晶种的触摸状态导线的末端触及石英玻璃坩埚内的硅熔体; 在温度控制期间，使用坩埚侧作为正极而将作为负极的线侧作为供给电压V2而使玻璃状石英坩埚的内表面失透; 并且通过在坩埚侧作为负极并且在温度控制周期之后将线侧作为正极，通过缓慢地拉晶晶体作为供给电压V3来生长硅单晶。

12. 发明授权

US08172942B2 Arc discharge apparatus, apparatus and method for manufacturing vitreous silica glass crucible, and method for pulling up silicon single crystal 有权
标题翻译：电弧放电装置，玻璃石英玻璃坩埚的制造装置及其制造方法以及提高硅单晶的方法
公开(公告)号：US08172942B2
公开(公告)日：2012-05-08
申请号：US12253500
申请日：2008-10-17
申请人： Masanori Fukui , Koichi Suzuki , Takeshi Fujita
发明人： Masanori Fukui , Koichi Suzuki , Takeshi Fujita
IPC分类号： C30B11/00 , C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04 , C30B17/00 , C30B21/02 , C30B28/06 , C30B35/00
CPC分类号： C30B15/10 , C03B19/095 , C30B29/06 , Y10T117/10 , Y10T117/1024 , Y10T117/1032
摘要： The arc discharge apparatus comprises a plurality of carbon electrodes connected to respective phases of a power supply for heating a silica powder and causing it to fuse by generating arc discharge between the carbon electrodes. All of the carbon electrodes have a density in a range from 1.30 g/cm3 to 1.80 g/cm3, and variability in density among the carbon electrodes is 0.2 g/cm3 or less. The carbon particles that constitute the carbon electrodes preferably have a particle diameter of 0.3 mm or less.
摘要翻译：电弧放电装置包括连接到用于加热二氧化硅粉末的电源的各相的多个碳电极，并且通过在碳电极之间产生电弧放电使其熔化。所有碳电极的密度范围为1.30g / cm 3至1.80g / cm 3，碳电极之间的密度变化率为0.2g / cm 3以下。构成碳电极的碳粒子的粒径优选为0.3mm以下。

13. 发明授权

US07736613B2 Modification process of synthetic silica powder and its quartz glass product 有权
标题翻译：合成二氧化硅粉及其石英玻璃制品的改性工艺
公开(公告)号：US07736613B2
公开(公告)日：2010-06-15
申请号：US10303899
申请日：2002-11-26
申请人： Masanori Fukui , Takahiro Satoh
发明人： Masanori Fukui , Takahiro Satoh
IPC分类号： C01B33/12 , C01B33/18 , C03B19/10
CPC分类号： C30B35/002 , C03B19/1065 , C03B2201/04 , C03B2201/20 , C03C1/026 , C30B15/10 , Y10T117/10 , Y10T428/13 , Y10T428/131 , Y10T428/1317
摘要： A modified synthetic silica powder is produced by heating in vacuum an amorphous synthetic silica powder produced by a sol-gel process, and then cooling the heated silica powder in an atmosphere containing helium. When the modified synthetic silica powder is fused and vitrified in a process of crucible production, the resulting quartz glass crucible contains hardly any bubbles.
摘要翻译：通过在真空中加热通过溶胶 - 凝胶法制备的无定形合成二氧化硅粉末，然后在含有氦气的气氛中冷却加热的二氧化硅粉末来制备改性合成二氧化硅粉末。当改性合成二氧化硅粉末在坩埚生产过程中熔融和玻璃化时，所得石英玻璃坩埚几乎不含任何气泡。

14. 发明授权

US06853673B2 Process and device for producing a quartz glass crucible by ring-like arc, and its quartz glass crucible 有权
标题翻译：通过环状电弧生产石英玻璃坩埚的方法和装置及其石英玻璃坩埚
公开(公告)号：US06853673B2
公开(公告)日：2005-02-08
申请号：US10383608
申请日：2003-03-10
申请人： Masanori Fukui , Masaru Satoh
发明人： Masanori Fukui , Masaru Satoh
IPC分类号： C03B20/00 , C03B19/09 , C30B15/10 , C30B35/00 , H05B7/22
CPC分类号： C30B35/002 , C03B19/095 , C30B15/10
摘要： The present invention provides a process and a device for producing a quartz glass crucible, which generates a stable ring-like arc and is suitable for the production of an excellent crucible having the large open diameter.In a production process and a device for producing a quartz glass crucible, wherein a quartz powder in a mould is heated to be fused by an arc discharge of the electrodes being positioned at around of a rotational axis of a mould, this invention is characterized by using an electrode structure, in which electrodes neighboring each other are positioned at regular intervals in the ring configuration, to form the stable ring-like arc being generated between the electrodes neighboring each other without generating an continuous arc between electrodes facing each other across a central portion of the ring, and heating and fusing a quarts powder.
摘要翻译：本发明提供了一种生产石英玻璃坩埚的方法和装置，其产生稳定的环状电弧，并且适用于制造具有大开口直径的优良坩埚。在制造方法和制造石英玻璃坩埚，其中模具中的石英粉末通过位于模具的旋转轴线周围的电极的电弧放电加热熔化，本发明的特征在于使用电极结构，其中每个电极另一个在环形结构中以规则的间隔定位，以形成在彼此相邻的电极之间产生的稳定的环状电弧，而不会在环的中心部分彼此面对的电极之间产生连续的电弧，并且加热和熔化石粉粉

15. 发明授权

US06808744B2 Method for preparing and regenerating a composite crucible 失效
标题翻译：复合坩埚的制备和再生方法
公开(公告)号：US06808744B2
公开(公告)日：2004-10-26
申请号：US10352654
申请日：2003-01-28
申请人： Yoshiyuki Tsuji , Masanori Fukui , Ken-ichi Hiroshima
发明人： Yoshiyuki Tsuji , Masanori Fukui , Ken-ichi Hiroshima
IPC分类号： B05D722
CPC分类号： C03B23/006 , C03B19/095 , C03B29/02 , C30B15/10 , C30B35/002 , Y10T428/13 , Y10T428/131 , Y10T428/1314 , Y10T428/1317
摘要： A composite crucible for pulling up monocrystalline silicon, which is superior in shape stability and suitable for a large-sized one is provided. The composite crucible is characterized in that a carbonaceous material as an outer layer and a quartz glass as an inner layer are integrally formed. Methods for preparing and regenerating a composite crucible are also disclosed.
摘要翻译：提供了一种复合坩埚，其用于提升单晶硅，其形状稳定性优异并且适合于大尺寸硅。复合坩埚的特征在于，作为外层的碳质材料和作为内层的石英玻璃一体形成。还公开了制备和再生复合坩埚的方法。

16. 发明授权

US06563169B1 Semiconductor device with high withstand voltage and a drain layer having a highly conductive region connectable to a diffused source layer by an inverted layer 有权
标题翻译：具有高耐压的半导体器件和具有可通过反相层连接到扩散源极层的高导电性区域的漏极层
公开(公告)号：US06563169B1
公开(公告)日：2003-05-13
申请号：US09367599
申请日：1999-08-18
申请人： Nobuki Miyakoshi , Masanori Fukui , Hideyuki Nakamura
发明人： Nobuki Miyakoshi , Masanori Fukui , Hideyuki Nakamura
IPC分类号： H01L2976
CPC分类号： H01L29/66712 , H01L29/0619 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/7809 , H01L29/7811
摘要： A highly conductive region 18 serving as a surface of a drain layer 2 of a first conductivity type is diffused more deeply than a main diffused layer 36 and a diffused channel layer 37, and has a small conducting resistance. The highly conductive region 18 is surrounded by a diffused region 40 of a second conductivity type which comprises a diffused base layer 38 and a diffused guard ring layer 13. Therefore, the highly conductive region 18 does not form spherical junctions, and a depletion layer spreading in the highly conductive region 18 extends into the highly conductive region 18. The highly conductive region 18 thus has a high withstand voltage while maintaining the low conducting resistance.
摘要翻译：用作第一导电类型的漏极层2的表面的高导电性区域18比主扩散层36和扩散沟道层37更深地扩散，并且具有小的导电电阻。高导电区域18由第二导电类型的扩散区域40包围，该扩散区域40包括扩散的基极层38和扩散的保护环层13.因此，高导电区域18不形成球形结，耗散层扩展在高导电区域18中延伸到高导电区域18.因此，高导电区域18具有高耐受电压，同时保持低导电电阻。

17. 发明授权

US08053080B2 Modification process of synthetic silica powder and its quartz glass product 有权
标题翻译：合成二氧化硅粉及其石英玻璃制品的改性工艺
公开(公告)号：US08053080B2
公开(公告)日：2011-11-08
申请号：US12768904
申请日：2010-04-28
申请人： Masanori Fukui , Takahiro Satoh
发明人： Masanori Fukui , Takahiro Satoh
IPC分类号： B32B13/04 , B32B17/06 , A47G19/22
CPC分类号： C30B35/002 , C03B19/1065 , C03B2201/04 , C03B2201/20 , C03C1/026 , C30B15/10 , Y10T117/10 , Y10T428/13 , Y10T428/131 , Y10T428/1317
摘要： A modification process of the synthetic quartz powder, which can make a quartz glass product hardly having bubbles at the time of fusing, is provided, along with a modification process of the synthetic quartz powder and a glass product using said modified quartz powder are provided, wherein the synthetic quartz powder is kept in helium atmosphere at least in the temperature falling process, when the amorphous synthetic quartz powder produced by the sol-gel method is carried out by heat treatment in a vacuum furnace at more than the degas temperature and less than the baking temperature, wherein the highest temperature in the helium atmosphere is preferably set to from more than 700° C. to less than 1400° C., and the helium atmosphere is kept to less than 400° C.
摘要翻译：本发明提供可以使石英玻璃制品在熔融时几乎不具有气泡的合成石英粉末的改性方法，以及使用所述改性石英粉末的合成石英粉末和玻璃制品的改性方法，至少在降温过程中，将合成石英粉保存在氦气氛中，当通过溶胶 - 凝胶法制造的无定形合成石英粉末在真空炉中通过在脱气温度下进行热处理并且小于烘烤温度，其中氦气氛中的最高温度优选设定为大于700℃至小于1400℃，氦气保持在小于400℃。

18. 发明授权

US07905112B2 Reforming process of quartz glass crucible 有权
标题翻译：石英玻璃坩埚改造工艺
公开(公告)号：US07905112B2
公开(公告)日：2011-03-15
申请号：US10628350
申请日：2003-07-29
申请人： Masanori Fukui , Masaru Satoh
发明人： Masanori Fukui , Masaru Satoh
IPC分类号： C03B19/00
CPC分类号： C03B32/00 , C03B19/095 , C03B29/02 , C30B15/10
摘要： A reforming process of a quartz glass crucible in which the quartz glass crucible is reformed by an arc discharge generated by electrodes positioned around a rotational axis and configured to heat an inside surface of the crucible while the crucible is rotated. The process includes arranging electrodes in an electrode structure such that neighboring electrodes are positioned at regular intervals in a ring-like configuration; forming a stable ring-like arc between the neighboring electrodes, without generating a continuous arc between electrodes facing each other across a central portion of the ring-like configuration; heating the inside surface of the crucible; and removing a foreign substance located on the inside surface of the crucible or a bubble located under the inside surface of the crucible.
摘要翻译：一种石英玻璃坩埚的重整工艺，其中石英玻璃坩埚通过由位于旋转轴线周围的电极产生的电弧放电而重构，并且构造成在坩埚旋转的同时加热坩埚的内表面。该方法包括在电极结构中布置电极，使得相邻的电极以规定的间隔以环状构造定位; 在相邻电极之间形成稳定的环状电弧，而不会在环状构造的中心部分彼此面对的电极之间产生连续的电弧; 加热坩埚的内表面; 并且去除位于坩埚内表面上的异物或位于坩埚内表面下方的气泡。

19. 发明授权

US5895527A Single crystal pulling apparatus 失效
标题翻译：单晶拉丝机
公开(公告)号：US5895527A
公开(公告)日：1999-04-20
申请号：US791777
申请日：1997-01-29
申请人： Hiroaki Taguchi , Takashi Atami , Hisashi Furuya , Masanori Fukui , Michio Kida
发明人： Hiroaki Taguchi , Takashi Atami , Hisashi Furuya , Masanori Fukui , Michio Kida
IPC分类号： C30B15/02 , C30B15/12 , C30B29/06 , H01L21/208 , C30B35/00
CPC分类号： C30B15/12 , Y10T117/10
摘要： The invention relates to a single crystal pulling apparatus comprising; an outer crucible 11 positioned inside a chamber (gas tight container) 2, for storing a semiconductor melt 21, and an inner crucible 30 comprising a cylindrical partition body, mounted inside the outer crucible 11 to form a double crucible, and wherein a single crystal of semiconductor 26 is pulled from the semiconductor melt 21 stored inside the inner crucible 30. With this arrangement, the inner crucible 30 is made from quartz and comprises an inside layer A, an outside layer C, and an intermediate layer B which lies between the inside layer A and the outside layer C, and the intermediate layer B is made from quartz with a larger gas bubble content than the quartz which makes up the inside layer A and the outside layer C of the inner crucible 30.
摘要翻译：本发明涉及一种单晶拉制装置，包括：位于室（气密容器）2内的用于储存半导体熔体21的外坩埚11和安装在外坩埚11内部以形成双坩埚的圆柱形分隔体的内坩埚30，并且其中单晶半导体26被从存储在内坩埚30内部的半导体熔融物21拉出。由此，内坩埚30由石英制成，包括内层A，外层C和中间层B，内层A和外层C，中间层B由具有比构成内坩埚30的内层A和外层C的石英更大的气泡含量的石英制成。

20. 发明授权

US4393056A Antibiotics tetronolide compounds and process for production thereof 失效
标题翻译：抗生素四酮类化合物及其生产方法
公开(公告)号：US4393056A
公开(公告)日：1983-07-12
申请号：US273377
申请日：1981-06-15
申请人： Fusao Tomita , Tatsuya Tamaoki , Kunikatsu Shirahata , Masaji Kasai , Noriaki Hirayama , Makoto Morimoto , Masanori Fukui
发明人： Fusao Tomita , Tatsuya Tamaoki , Kunikatsu Shirahata , Masaji Kasai , Noriaki Hirayama , Makoto Morimoto , Masanori Fukui
IPC分类号： C07D307/93 , A61K31/34 , A61K31/343 , A61K31/70 , A61K31/7042 , A61K31/7048 , A61P31/04 , A61P35/00 , C07D307/60 , C07D307/94 , C07H15/26 , C07H17/08 , C12P17/04 , C12P17/16 , C12P19/60 , C12P19/62 , C12R1/30 , A61K31/71 , C07G11/00
CPC分类号： C07H17/08 , C07D307/60 , C07H15/26 , C12P17/162 , C12P19/60 , C12R1/30
摘要： New antibacterial tetronolide compounds F-1 and F-2 are produced by fermentation of a microorganism belonging to the genus Micromonospora. The antibiotics F-1 and F-2 are accumulated in the culture liquor and are isolated therefrom respectively and the acyl derivatives of F-1 and F-2, that is, F-1-21-O-acetate, F-1-21-O-propionate, F-1-21-O-n-butylate, F-1 diacetate, F-1 dipropionate, F-2 triacetate, F-2 tripropionate and F-2 tri-n-butylate, etc., are synthesized from F-1 and F-2 by known means.
摘要翻译：新型抗菌四烯酚化合物F-1和F-2通过发酵属于小单孢菌属的微生物产生。抗生素F-1和F-2积累在培养液中，分别分离，F-1和F-2的酰基衍生物，即F-1-21-O-乙酸酯，F-1- 21-O-丙酸酯，F-1-21-丁酸酯，F-1二乙酸酯，F-2二丙酸酯，F-2三乙酸酯，F-2三丙酸酯和F-2三正丁酸酯等从F-1和F-2以已知方式。

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