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11. 发明授权

US5894149A Semiconductor device having high breakdown voltage and method of manufacturing the same 失效
标题翻译：具有高击穿电压的半导体器件及其制造方法
公开(公告)号：US5894149A
公开(公告)日：1999-04-13
申请号：US762175
申请日：1996-12-09
申请人： Akio Uenishi , Katsumi Nakamura
发明人： Akio Uenishi , Katsumi Nakamura
IPC分类号： H01L21/331 , H01L29/06 , H01L29/40 , H01L29/739 , H01L29/78 , H01L29/745
CPC分类号： H01L29/402 , H01L29/0653 , H01L29/0696 , H01L29/407 , H01L29/66348 , H01L29/7397 , H01L29/7813
摘要： In a semiconductor device with a high breakdown voltage, insulating layers are buried at regions in n.sup.31 silicon substrate located between gate trenches which are arranged with a predetermined pitch. This structure increases a carrier density at a portion near an emitter, and improves characteristic of an IGBT of a gate trench type having a high breakdown voltage.
摘要翻译：在具有高击穿电压的半导体器件中，绝缘层被掩埋在位于以预定间距排列的栅极沟槽之间的n31硅衬底的区域。该结构增加了发射极附近部分的载流子密度，提高了具有高击穿电压的栅沟槽型IGBT的特性。

12. 发明授权

US4900083A Modular vehicle body and method of building same 失效
标题翻译：模块化车身及其搭建方法
公开(公告)号：US4900083A
公开(公告)日：1990-02-13
申请号：US171813
申请日：1988-03-22
申请人： Hideyuki Kumasaka , Tarou Haiwara , Katsumi Nakamura , Kenichi Miyazaki , Hiroshi Kuriyama , Kouji Takao , Keizo Inoue
发明人： Hideyuki Kumasaka , Tarou Haiwara , Katsumi Nakamura , Kenichi Miyazaki , Hiroshi Kuriyama , Kouji Takao , Keizo Inoue
IPC分类号： B62D23/00 , B62D27/06 , B62D31/02 , B62D65/04
CPC分类号： B62D65/04 , B62D23/00 , B62D27/065 , Y10T29/49904
摘要： A vehicle body consists of six independent body sections, i.e., an engine compartment assembly, floor assembly, rear end assembly, a pair of body side assemblies and roof assembly. The assemblies are prepared and painted independently and then respectively provided with equipment such as an engine, suspensions, upholsteries, etc. so as to constitute an engine compartment module, floor module, rear end module, body side modules and roof module, respectively. A complete vehicle or nearly complete vehicle is obtained by joining the modules together with bolts and nuts.
摘要翻译：车身由六个独立的主体部分组成，即发动机舱组件，地板组件，后端组件，一对车身侧组件和车顶组件。各组件的制备和独立涂装，分别设置有发动机，悬架，升降器等设备，以分别构成发动机舱模块，地板模块，后端模块，车身侧模块和车顶模块。通过将模块与螺栓和螺母连接在一起可获得完整的车辆或几乎完整的车辆。

13. 发明授权

US09385183B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09385183B2
公开(公告)日：2016-07-05
申请号：US14434388
申请日：2012-12-06
申请人： Ze Chen , Tsuyoshi Kawakami , Katsumi Nakamura
发明人： Ze Chen , Tsuyoshi Kawakami , Katsumi Nakamura
IPC分类号： H01L27/01 , H01L27/12 , H01L31/0392 , H01L29/06 , H01L29/739 , H01L29/423
CPC分类号： H01L29/0619 , H01L29/0638 , H01L29/4236 , H01L29/7395 , H01L29/7397
摘要： The termination region includes a ring region (LNFLR). A plurality of ring-shaped P-type ring layers are regularly arranged in the ring region (LNFLR). The ring region (LNFLR) is divided into a plurality of units which include the plurality of P-type ring layers respectively. A width of each unit is constant. A total number of P-type impurities in the ring region (LNFLR) is N, the target withstand voltage is BV [V], a width of each unit is SandL [μm], and the number of the plurality of units is num, following relationships are satisfied. N≧(M×BV)γ, M=104 to 105, γ=0.55 to 1.95, SandL×num×Ecri≧2×α×BV, Ecri=2.0 to 3.0×105 [V/cm], α=100 to 101. Widths of the P-type ring layers of the plurality of units linearly decrease toward an outside of the termination region.
摘要翻译：终端区域包括环形区域（LNFLR）。多个环形P型环层规则地布置在环形区域（LNFLR）中。环区域（LNFLR）被分成多个单元，分别包括多个P型环层。每个单位的宽度是恒定的。环状区域（LNFLR）中的P型杂质的总数为N，目标耐受电压为BV [V]，每个单位的宽度为SandL [μm]，多个单位的数量为num，满足以下关系。 N≥（M×BV）γ，M = 104〜105，γ= 0.55〜1.95，SandL×num×Ecri≥2×α×BV，Ecri = 2.0〜3.0×105 [V / cm]，α= 多个单元的P型环层的宽度朝着端接区域的外侧线性地减小。

14. 发明授权

US09041051B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09041051B2
公开(公告)日：2015-05-26
申请号：US14111168
申请日：2011-07-05
申请人： Ze Chen , Katsumi Nakamura
发明人： Ze Chen , Katsumi Nakamura
IPC分类号： H01L29/36 , H01L29/739 , H01L29/861 , H01L29/06 , H01L29/08
CPC分类号： H01L29/7397 , H01L29/0615 , H01L29/063 , H01L29/0696 , H01L29/0821 , H01L29/0834 , H01L29/1095 , H01L29/41708 , H01L29/7393 , H01L29/861
摘要： An insulated gate bipolar transistor having a gate electrode (7) and an emitter electrode (9) is provided in a transistor region. A termination region is arranged around the transistor region. A first N type buffer layer (18) is provided below an N type drift layer (1) in the transistor region. A P type collector layer (19) is provided below the first N type buffer layer (18). A second N type buffer layer (20) is provided below the N type drift layer (1) in the termination region. A collector electrode (21) is directly connected to the P type collector layer (19) and the second N type buffer layer (20). An impurity concentration of the second N type buffer layer (20) decreases as a distance from the collector electrode (21) decreases. The second N type buffer layer (20) does not form any ohmic contact with the collector electrode (21).
摘要翻译：具有栅极（7）和发射极（9）的绝缘栅双极晶体管设置在晶体管区域中。端子区域布置在晶体管区域周围。第一N型缓冲层（18）设置在晶体管区域中的N型漂移层（1）的下方。在第一N型缓冲层（18）的下方设置有P型集电体层（19）。第二N型缓冲层（20）设置在终端区域中的N型漂移层（1）的下方。集电极（21）直接连接到P型集电极层（19）和第二N型缓冲层（20）。随着与集电极（21）的距离减小，第二N型缓冲层（20）的杂质浓度降低。第二N型缓冲层（20）不与集电极（21）形成任何欧姆接触。

15. 发明授权

US09035434B2 Semiconductor device having first and second portions with opposite conductivity type which contact an electrode 有权
标题翻译：具有与电极接触的具有相反导电类型的第一和第二部分的半导体器件
公开(公告)号：US09035434B2
公开(公告)日：2015-05-19
申请号：US12716427
申请日：2010-03-03
申请人： Katsumi Nakamura
发明人： Katsumi Nakamura
IPC分类号： H01L21/02 , H01L29/02 , H01L29/861 , H01L29/08 , H01L29/739
CPC分类号： H01L29/861 , H01L29/0834 , H01L29/36 , H01L29/7397 , H01L29/8618
摘要： A semiconductor device having first and second portions with opposite conductivity types. There are first through fourth layers in the semiconductor device. A peak value of the impurity concentration of the fourth layer is higher than the peak value of the impurity concentration of the second layer and lower than the peak value of the impurity concentration of a first portion of the third layer. The fourth layer includes a third portion located on the first portion and a fourth portion which is located on the second portion. The semiconductor device allows a decrease in the forward voltage drop and also allows an improvement of the safe operating area tolerance. Thus, it is possible to decrease the forward voltage drop, improve the maximum reverse voltage, and suppress oscillations at the time of recovery.
摘要翻译：一种具有相反导电类型的第一和第二部分的半导体器件。在半导体器件中有第一到第四层。第四层的杂质浓度的峰值高于第二层的杂质浓度的峰值，并且低于第三层的第一部分的杂质浓度的峰值。第四层包括位于第一部分上的第三部分和位于第二部分上的第四部分。半导体器件允许正向压降的降低，并且还允许提高安全工作面积容差。因此，可以减小正向压降，提高最大反向电压，并抑制恢复时的振荡。

16. 发明授权

US08469336B2 Valve assembly 有权
标题翻译：阀组件
公开(公告)号：US08469336B2
公开(公告)日：2013-06-25
申请号：US12734116
申请日：2008-10-01
申请人： Katsumi Nakamura , Shingo Iguchi
发明人： Katsumi Nakamura , Shingo Iguchi
IPC分类号： F16K31/44 , F16K1/22
CPC分类号： F02D9/106 , F02M26/35 , F02M26/70 , F02M26/73 , F16K1/2268 , Y10T137/794
摘要： A valve assembly in which, even if a housing corrodes, application of a radially inward compression force to a heat-resistant filter can be suppressed. The valve assembly includes the housing having a gas path and a valve shaft hole, a valve having a valve shaft movably inserted in the valve shaft hole and also having a valve element connected to the valve shaft, and tubular heat-resistant filters installed between the inner peripheral surface of the valve shaft hole and the outer peripheral surface of the valve shaft and capturing dust in exhaust gas. The housing is made of cast iron. The valve assembly further has reinforcement collars installed between the inner peripheral surface of the valve shaft hole and the outer peripheral surfaces of the heat-resistant filters. The reinforcement collars have higher rigidity than the heat-resistant filters. At least the surfaces of the reinforcement collars are made of a high corrosion resistant material having higher corrosion resistance than the cast iron.
摘要翻译：一种阀组件，其中即使外壳腐蚀，也可以抑制向耐热过滤器施加径向向内的压缩力。阀组件包括具有气体通道的壳体和阀轴孔，阀具有可移动地插入阀轴孔中并且还具有连接到阀轴的阀元件的阀轴和安装在阀轴孔之间的管状耐热过滤器阀轴孔的内周面和阀轴的外周面，并捕获废气中的灰尘。外壳由铸铁制成。阀组件还具有安装在阀轴孔的内周面与耐热过滤器的外周面之间的加强套环。加强套环具有比耐热过滤器更高的刚性。至少加强套圈的表面由具有比铸铁更高的耐腐蚀性的高耐腐蚀材料制成。

17. 发明申请

US20100327313A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100327313A1
公开(公告)日：2010-12-30
申请号：US12867832
申请日：2008-03-31
申请人： Katsumi Nakamura
发明人： Katsumi Nakamura
IPC分类号： H01L29/739
CPC分类号： H01L29/7393 , H01L29/0834 , H01L29/1095 , H01L29/41766 , H01L29/66348 , H01L29/7397
摘要： A semiconductor device includes a semiconductor substrate and a MOS transistor. The semiconductor substrate has the first main surface and the second main surface facing each other. The MOS transistor includes a gate electrode (5a) formed on the first main surface side, an emitter electrode (11) formed on the first main surface side, and a collector electrode (12) formed in contact with the second main surface. An element generates an electric field in a channel by a voltage applied to the gate electrode (5a), and controls the current between the emitter electrode (11) and the collector electrode (12) by the electric field in the channel. The spike density in the interface between the semiconductor substrate and the collector electrode (12) is not less than 0 and not more than 3×108 unit/cm2. Consequently, a semiconductor device suitable for parallel operation is provided.
摘要翻译：半导体器件包括半导体衬底和MOS晶体管。半导体衬底具有彼此面对的第一主表面和第二主表面。 MOS晶体管包括形成在第一主表面侧的栅电极（5a），形成在第一主表面侧上的发射电极（11）和与第二主表面接触形成的集电极（12）。元件通过施加到栅极（5a）的电压在沟道中产生电场，并且通过沟道中的电场来控制发射电极（11）和集电极（12）之间的电流。半导体基板与集电极（12）的界面的尖峰密度为0以上3×108单位/ cm 2以下。因此，提供了适于并联操作的半导体器件。

18. 发明申请

US20100206406A1 VALVE ASSEMBLY 有权
标题翻译：阀组件
公开(公告)号：US20100206406A1
公开(公告)日：2010-08-19
申请号：US12734116
申请日：2008-10-01
申请人： Katsumi Nakamura , Shingo Iguchi
发明人： Katsumi Nakamura , Shingo Iguchi
IPC分类号： F16K27/00
CPC分类号： F02D9/106 , F02M26/35 , F02M26/70 , F02M26/73 , F16K1/2268 , Y10T137/794
摘要： A valve assembly in which, even if a housing corrodes, application of a radially inward compression force to a heat-resistant filter can be suppressed. The valve assembly includes the housing having a gas path and a valve shaft hole, a valve having a valve shaft movably inserted in the valve shaft hole and also having a valve element connected to the valve shaft, and tubular heat-resistant filters installed between the inner peripheral surface of the valve shaft hole and the outer peripheral surface of the valve shaft and capturing dust in exhaust gas. The housing is made of cast iron. The valve assembly further has reinforcement collars installed between the inner peripheral surface of the valve shaft hole and the outer peripheral surfaces of the heat-resistant filters. The reinforcement collars have higher rigidity than the heat-resistant filters. At least the surfaces of the reinforcement collars are made of a high corrosion resistant material having higher corrosion resistance than the cast iron.
摘要翻译：一种阀组件，其中即使外壳腐蚀，也可以抑制向耐热过滤器施加径向向内的压缩力。阀组件包括具有气体通道的壳体和阀轴孔，阀具有可移动地插入阀轴孔中并且还具有连接到阀轴的阀元件的阀轴和安装在阀轴孔之间的管状耐热过滤器阀轴孔的内周面和阀轴的外周面，并捕获废气中的灰尘。外壳由铸铁制成。阀组件还具有安装在阀轴孔的内周面与耐热过滤器的外周面之间的加强套环。加强套环具有比耐热过滤器更高的刚性。至少加强套圈的表面由具有比铸铁更高的耐腐蚀性的高耐腐蚀材料制成。

19. 发明申请

US20060278366A1 Integral-type heat exchanger 失效
公开(公告)号：US20060278366A1
公开(公告)日：2006-12-14
申请号：US11502392
申请日：2006-08-11
申请人： Kenji Makino , Hiroyasu Koizumi , Minoru Tsuchiya , Kunio Matsugi , Hiroshi Chikuma , Satoshi Ishihara , Makoto Tajima , Yoshiki Tsuda , Toshiaki Yamamoto , Hideki Kobayashi , Katsumi Nakamura , Junichi Enari , Mamoru Baba
发明人： Kenji Makino , Hiroyasu Koizumi , Minoru Tsuchiya , Kunio Matsugi , Hiroshi Chikuma , Satoshi Ishihara , Makoto Tajima , Yoshiki Tsuda , Toshiaki Yamamoto , Hideki Kobayashi , Katsumi Nakamura , Junichi Enari , Mamoru Baba
IPC分类号： F28F9/00
CPC分类号： F28F9/18 , F28D1/0435 , F28D1/05375 , F28D2021/0084 , F28D2021/0089 , F28D2021/0094 , F28F1/128 , F28F9/002 , F28F9/02 , F28F9/0202 , F28F9/0214 , F28F9/0246 , F28F9/0251 , F28F9/0256 , F28F2009/004 , F28F2009/0287 , F28F2215/02 , F28F2220/00 , F28F2275/143
摘要： Tanks of a first heat exchanger have plane sections perpendicular to bottoms having a plurality of tube insertion holes formed therein. Tanks of a second heat exchanger with circular cross sections have bottoms having a plurality of tube insertion holes formed therein. The axes of the tube insertion holes of the first and second heat exchangers are held in parallel with each other. The second heat exchanger is in contact with the plane sections of the first heat exchanger tank.

20. 发明授权

US07115944B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07115944B2
公开(公告)日：2006-10-03
申请号：US11204048
申请日：2005-08-16
申请人： Katsumi Nakamura , Shigeru Kusunoki , Hideki Nakamura
发明人： Katsumi Nakamura , Shigeru Kusunoki , Hideki Nakamura
IPC分类号： H01L29/76
CPC分类号： H01L29/402 , H01L29/407 , H01L29/41741 , H01L29/456 , H01L29/7395 , H01L29/7397
摘要： A semiconductor device of the present invention has an insulating gate type field effect transistor portion having an n-type emitter region (3) and an n− silicon substrate (1), which are opposed to each other sandwiching a p-type body region (2), as well as a gate electrode (5a) which is opposed to p-type body region (2) sandwiching a gate insulating film (4a), and also has a stabilizing plate (5b). This stabilizing plate (5b) is made of a conductor or a semiconductor, is opposed to n− silicon substrate (1) sandwiching an insulating film (4, 4b) for a plate, and forms together with n− silicon substrate (1), a capacitor. This stabilizing plate capacitor formed between stabilizing plate (5b) and n− silicon substrate (1) has a capacitance greater than that of the gate-drain capacitor formed between gate electrode (5a) and n− silicon substrate (1).
摘要翻译：本发明的半导体器件具有绝缘栅型场效应晶体管部分，其具有n型发射极区域（3）和n +硅衬底（1），它们彼此相对夹入 p型体区域（2）以及与栅极绝缘膜（4a）夹持的p型体区域（2）相对的栅电极（5a），还具有稳定板（5） b）。该稳定板（5b）由导体或半导体制成，与夹在板上的绝缘膜（4,4b）夹在一起的n +硅衬底（1）相对，并形成在一起与硅衬底（1），电容器。形成在稳定板（5b）和硅衬底（1）之间的稳定板电容器的电容大于在栅电极（5a）和n < 硅衬底（1）。

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