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11. 发明申请

US20120108005A1 METHOD FOR FORMING Ge-Sb-Te FILM AND STORAGE MEDIUM 有权
标题翻译：形成Ge-Sb-Te薄膜和储存介质的方法
公开(公告)号：US20120108005A1
公开(公告)日：2012-05-03
申请号：US13376749
申请日：2010-06-02
申请人： Yumiko Kawano , Susumu Arima
发明人： Yumiko Kawano , Susumu Arima
IPC分类号： H01L21/06 , C23C16/52
CPC分类号： H01L45/06 , C23C16/02 , C23C16/305 , C23C16/4405 , H01L45/144 , H01L45/1616
摘要： A film-forming method includes a preprocessing step (step 1) wherein the inside of a processing chamber is exposed to a gas containing Cl and/or F in a state having no substrate in the processing chamber, and a step (step 2) wherein a substrate is loaded into the processing chamber after the step 1. Then, in a step 3, a gaseous Ge raw material, a gaseous Sb raw material, and a gaseous Te raw material are introduced into the processing chamber having the substrate loaded therein, and a Ge—Sb—Te film formed of Ge2Sb2Te5 is formed on the substrate by CVD.
摘要翻译：成膜方法包括在处理室内没有基板的状态下将处理室的内部暴露于含有Cl和/或F的气体的预处理步骤（步骤1）和步骤（步骤2），其中在步骤1之后将基板装载到处理室中。然后，在步骤3中，将气态Ge原料，气态Sb原料和气态Te原料引入到其中装载有基板的处理室中，并且通过CVD在基板上形成由Ge 2 Sb 2 Te 5形成的Ge-Sb-Te膜。

12. 发明授权

US08927060B2 Method for forming Ge-Sb-Te film and storage medium 有权
标题翻译： Ge-Sb-Te薄膜和储存介质的形成方法
公开(公告)号：US08927060B2
公开(公告)日：2015-01-06
申请号：US13377199
申请日：2010-06-02
申请人： Yumiko Kawano , Susumu Arima
发明人： Yumiko Kawano , Susumu Arima
IPC分类号： C23C16/00 , C23C16/06 , H01L45/00 , C23C16/30 , G11B7/2433 , G11B7/26 , G11B7/243
CPC分类号： H01L45/144 , C23C16/305 , G11B7/2433 , G11B7/266 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , H01L45/06 , H01L45/1616
摘要： There is provided a method for forming a Ge—Sb—Te film having a composition of Ge2Sb2Te5 on a substrate by a CVD method using a gaseous Ge source material, a gaseous Sb source material and a gaseous Te source material. The method includes loading the substrate within a processing chamber (Process 1); performing a first stage film forming process on the substrate by supplying the gaseous Ge source material and the gaseous Sb source material (Process 2); and performing a second stage film forming process on a film obtained through the first stage film forming process by supplying the gaseous Sb source material and the gaseous Te source material (Process 3). The Ge—Sb—Te film is formed by the film obtained through Process 2 and by a film obtained through Process 3.
摘要翻译：提供了通过使用气态Ge源材料，气态Sb源材料和气态Te源材料的CVD方法在基板上形成具有Ge 2 Sb 2 Te 5组成的Ge-Sb-Te膜的方法。该方法包括将衬底加载到处理室内（工艺1）; 通过供给气态Ge源材料和气态Sb源材料，在基板上进行第一阶段成膜工序（工序2）。并且通过供给气态Sb源材料和气态Te源材料，在通过第一阶段成膜工艺获得的膜上进行第二阶段成膜工艺（工艺3）。 Ge-Sb-Te膜由通过方法2获得的膜和通过方法3获得的膜形成。

13. 发明申请

US20130183446A1 METHOD FOR FORMING Ge-Sb-Te FILM AND STORAGE MEDIUM 有权
标题翻译：形成Ge-Sb-Te薄膜和储存介质的方法
公开(公告)号：US20130183446A1
公开(公告)日：2013-07-18
申请号：US13825579
申请日：2011-09-05
申请人： Yumiko Kawano , Susumu Arima
发明人： Yumiko Kawano , Susumu Arima
IPC分类号： C23C16/06 , C23C16/44
CPC分类号： C23C16/06 , C23C16/305 , C23C16/44 , C23C16/45523 , H01L45/06 , H01L45/144 , H01L45/1616
摘要： Disclosed is a method for forming a Ge—Sb—Te film, in which a substrate is disposed within a process chamber, a gaseous Ge material, a gaseous Sb material, and a Te material are introduced into the process chamber, so that a Ge—Sb—Te film formed of Ge2Sb2Te5 is formed on the substrate by CVD. The method for forming a Ge—Sb—Te film comprises: a step (step 2) wherein the gaseous Ge material and the gaseous Sb material or alternatively a small amount of the gaseous Te material not sufficient for formed of Ge2Sb2Te5 in addition to the gaseous Ge material and the gaseous Sb material are introduced into the process chamber so that a precursor film, which does not contain Te or contains Te in an amount smaller than that in Ge2Sb2Te5, is formed on the substrate; and a step (step 3) wherein the gaseous Te material is introduced into the process chamber and the precursor film is caused to adsorb Te, so that the Te concentration in the film is adjusted.
摘要翻译：公开了一种形成Ge-Sb-Te膜的方法，其中将衬底设置在处理室内，气态Ge材料，气态Sb材料和Te材料被引入处理室中，使得Ge 由Ge2Sb2Te5形成的-Sb-Te膜通过CVD形成在基板上。形成Ge-Sb-Te膜的方法包括：步骤（步骤2），其中气态Ge材料和气态Sb材料或替代地少量气态Te材料不足以形成Ge2Sb2Te5，除了气体将Ge材料和气态Sb材料引入处理室，使得在基板上形成不含Te或含有Te的量的前体膜，其量小于Ge 2 Sb 2 Te 5中的Te; 和步骤（步骤3），其中将气态Te材料引入处理室，并使前体膜吸附Te，从而调节膜中的Te浓度。

14. 发明申请

US20120107505A1 METHOD FOR FORMING Ge-Sb-Te FILM AND STORAGE MEDIUM 有权
标题翻译：形成Ge-Sb-Te薄膜和储存介质的方法
公开(公告)号：US20120107505A1
公开(公告)日：2012-05-03
申请号：US13377199
申请日：2010-06-02
申请人： Yumiko Kawano , Susumu Arima
发明人： Yumiko Kawano , Susumu Arima
IPC分类号： C23C16/30
CPC分类号： H01L45/144 , C23C16/305 , G11B7/2433 , G11B7/266 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , H01L45/06 , H01L45/1616
摘要： There is provided a method for forming a Ge—Sb—Te film having a composition of Ge2Sb2Te5 on a substrate by a CVD method using a gaseous Ge source material, a gaseous Sb source material and a gaseous Te source material. The method includes loading the substrate within a processing chamber (Process 1); performing a first stage film forming process on the substrate by supplying the gaseous Ge source material and the gaseous Sb source material (Process 2); and performing a second stage film forming process on a film obtained through the first stage film forming process by supplying the gaseous Sb source material and the gaseous Te source material (Process 3). The Ge—Sb—Te film is formed by the film obtained through Process 2 and by a film obtained through Process 3.
摘要翻译：提供了通过使用气态Ge源材料，气态Sb源材料和气态Te源材料的CVD方法在基板上形成具有Ge 2 Sb 2 Te 5组成的Ge-Sb-Te膜的方法。该方法包括将衬底加载到处理室内（工艺1）; 通过供给气态Ge源材料和气态Sb源材料，在基板上进行第一阶段成膜工序（工序2）。并且通过供给气态Sb源材料和气态Te源材料，在通过第一阶段成膜工艺获得的膜上进行第二阶段成膜工艺（工艺3）。 Ge-Sb-Te膜由通过方法2获得的膜和通过方法3获得的膜形成。

15. 发明申请

US20110052810A1 FILM FORMING METHOD AND STORAGE MEDIUM 审中-公开
标题翻译：电影形成方法和储存媒体
公开(公告)号：US20110052810A1
公开(公告)日：2011-03-03
申请号：US12918152
申请日：2009-02-18
申请人： Yumiko Kawano , Susumu Arima , Akinobu Kakimoto , Toshiyuki Hirota , Takakazu Kiyomura
发明人： Yumiko Kawano , Susumu Arima , Akinobu Kakimoto , Toshiyuki Hirota , Takakazu Kiyomura
IPC分类号： C23C16/22
CPC分类号： H01L21/02197 , C23C16/409 , C23C16/45531 , H01G4/1227 , H01L21/0228 , H01L21/31691 , H01L28/55
摘要： An AxByOz-type oxide film can be produced by introducing a first organic metal compound source material, a second organic metal compound source material and an oxidizer into a processing chamber and forming the AxByOz-type oxide film on a substrate. In the production, a compound which has a low vapor pressure and has an organic ligand capable of being decomposed with an oxidizer to produce CO is used as the first organic metal compound source material, a metal alkoxide is used as the second organic metal compound source material, and gaseous O3 or O2 is used as the oxidizer. It is absolutely necessary to introduce the second organic metal compound source material immediately before the introduction of the oxidizer.
摘要翻译：可以通过将第一有机金属化合物源材料，第二有机金属化合物源材料和氧化剂引入到处理室中并在基板上形成AxByOz型氧化物膜来制造AxByOz型氧化物膜。在制造中，使用具有低蒸气压并具有能够用氧化剂分解以产生CO的有机配体的化合物作为第一有机金属化合物源材料，使用金属醇盐作为第二有机金属化合物源材料和气态O 3或O 2用作氧化剂。在引入氧化剂之前，绝对需要引入第二有机金属化合物源材料。

16. 发明授权

US08029621B2 Raw material feeding device, film formation system and method for feeding gaseous raw material 有权
标题翻译：原料给料装置，成膜系统和气态原料供料方法
公开(公告)号：US08029621B2
公开(公告)日：2011-10-04
申请号：US12067714
申请日：2006-07-25
申请人： Hideaki Yamasaki , Yumiko Kawano
发明人： Hideaki Yamasaki , Yumiko Kawano
IPC分类号： C23C16/00
CPC分类号： C23C16/4481
摘要： A raw material feeding device for feeding a gaseous raw material formed by sublimating a solid raw material to a film formation system includes a raw material container for holding the solid raw material therein, a first heating unit placed at a first side of the container, a second heating unit placed at a second side thereof, the first temperature control unit for conducting a first process of controlling the first and the second heating unit to make the temperature of the first side higher than that of the second side to thereby sublimate the solid raw material disposed at the first side, and the second temperature control unit for conducting a second process of controlling the first and the second heating unit to make the temperature of the second side higher than that of the first side to thereby sublimate the solid raw material disposed at the second side.
摘要翻译：将通过将固体原料升华形成的气态原料供给到成膜系统的原料供给装置包括：将固体原料保持在其中的原料容器，放置在容器第一侧的第一加热单元，放置在第二侧的第二加热单元，第一温度控制单元，用于进行控制第一和第二加热单元的第一过程，以使第一侧的温度高于第二侧的温度，从而使固体原料设置在第一侧的材料和第二温度控制单元，用于进行控制第一和第二加热单元的第二过程，以使第二侧的温度高于第一侧的温度，从而使设置的固体原料升华在第二边。

17. 发明授权

US06989321B2 Low-pressure deposition of metal layers from metal-carbonyl precursors 有权
标题翻译：金属 - 羰基前驱体金属层的低压沉积
公开(公告)号：US06989321B2
公开(公告)日：2006-01-24
申请号：US10673908
申请日：2003-09-30
申请人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Masahito Sugiura , Yumiko Kawano , Gert J Leusink , Fenton R McFeely , Sandra G. Malhotra
发明人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Masahito Sugiura , Yumiko Kawano , Gert J Leusink , Fenton R McFeely , Sandra G. Malhotra
IPC分类号： H01L21/20 , H01L21/44
CPC分类号： C23C16/16 , H01L21/28556
摘要： A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process includes introducing a process gas containing a metal carbonyl precursor in a process chamber and depositing a metal layer on a substrate. The TCVD process utilizes a short residence time for the gaseous species in the processing zone above the substrate to form a low-resistivity metal layer. In one embodiment of the invention, the metal carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12 precursors. In another embodiment of the invention, a method is provided for depositing low-resistivity W layers at substrate temperatures below about 500° C., by utilizing a residence time less than about 120 msec.
摘要翻译：通过热化学气相沉积（TCVD）方法在金属层上沉积金属层的方法包括在处理室中引入含有羰基金属前驱体的工艺气体并在基底上沉积金属层。 TCVD工艺利用在衬底上方的处理区域中的气态物质的短暂停留时间以形成低电阻率金属层。在本发明的一个实施方案中，羰基金属前体可以选自W（CO）6，Ni（CO）4，Mo（CO） CO 2，CO 2，CO 2，CO 2，CO 2，CO 2，CO 2， Re（CO）10，Cr（CO）6和Ru 3（CO）3， 12个前体。在本发明的另一个实施例中，提供了一种通过利用小于约120毫秒的停留时间在低于约500℃的衬底温度下沉积低电阻W层的方法。

18. 发明申请

US20050233079A1 Film formation method 有权
标题翻译：成膜方法
公开(公告)号：US20050233079A1
公开(公告)日：2005-10-20
申请号：US11155575
申请日：2005-06-20
申请人： Hideaki Yamasaki , Tatsuo Hatano , Yumiko Kawano
发明人： Hideaki Yamasaki , Tatsuo Hatano , Yumiko Kawano
IPC分类号： C23C16/18 , C23C16/02 , C23C16/16 , C23C16/455 , H01L21/28 , H01L21/285 , C23C16/00 , H05H1/24
CPC分类号： C23C16/455 , C23C16/16 , H01L21/28556
摘要： A method of forming a metal film using a metal carbonyl compound as a material is disclosed that includes the steps of: (a) introducing a reactive gas into a space near a surface of a substrate to be processed; and (b) introducing a gaseous phase material including the metal carbonyl compound into the space on the surface of the substrate to be processed, and depositing the metal film on the surface of the substrate to be processed after step (a). Step (a) is executed in such a manner as to prevent substantial deposition of the metal film on the substrate to be processed.
摘要翻译：公开了使用羰基金属化合物作为材料形成金属膜的方法，其包括以下步骤：（a）将反应性气体引入待处理的基板的表面附近的空间; 和（b）将包含羰基金属化合物的气相材料引入到待处理基板的表面上的空间中，并且在步骤（a）之后将金属膜沉积在待处理基板的表面上。执行步骤（a），以防止金属膜在待处理的基板上的大量沉积。

19. 发明授权

US06436203B1 CVD apparatus and CVD method 失效
标题翻译： CVD装置和CVD法
公开(公告)号：US06436203B1
公开(公告)日：2002-08-20
申请号：US09551393
申请日：2000-04-18
申请人： Takeshi Kaizuka , Takashi Horiuchi , Masami Mizukami , Takashi Mochizuki , Yumiko Kawano , Hideaki Yamasaki
发明人： Takeshi Kaizuka , Takashi Horiuchi , Masami Mizukami , Takashi Mochizuki , Yumiko Kawano , Hideaki Yamasaki
IPC分类号： B05D136
CPC分类号： C23C16/4481 , C23C16/18 , C23C16/20 , C23C16/45565 , C23C16/45572 , C23C16/45574
摘要： The present invention provides a CVD apparatus and a CVD method for use in forming an Al/Cu multilayered film. The Al/Cu multilayered film is formed in the CVD apparatus comprising a chamber for placing a semiconductor wafer W, a susceptor for mounting the semiconductor wafer W thereon, an Al raw material supply system for introducing a gasified Al raw material into the chamber and a Cu raw material supply system for introducing a gasified Cu raw material into the chamber. The Al/Cu multilayered film is formed by repeating a series of steps consisting of introducing the Al raw material gas into the chamber, depositing the Al film on the semiconductor wafer W by a CVD method, followed by generating a plasma in the chamber in which the Cu raw material gas has been introduced and depositing the Cu film on the semiconductor wafer W by a CVD method. The Al/Cu multilayered film thus obtained is subjected to a heating treatment (annealing), thereby forming a desired Al/Cu multilayered film.
摘要翻译：本发明提供了用于形成Al / Cu多层膜的CVD装置和CVD方法。在包括用于放置半导体晶片W的室，用于安装半导体晶片W的基座的CVD装置中形成Al / Cu多层膜，用于将气化的Al原料引入到室中的Al原料供给系统 Cu原料供给系统，用于将气化的Cu原料引入室中。 Al / Cu多层膜通过重复一系列步骤而形成，该步骤包括将Al原料气体引入室中，通过CVD法将Al膜沉积在半导体晶片W上，随后在室中产生等离子体，其中引入Cu原料气体并通过CVD法将Cu膜沉积在半导体晶片W上。对这样得到的Al / Cu多层膜进行加热处理（退火），形成所需的Al / Cu多层膜。

20. 发明申请

US20090197410A1 METHOD OF FORMING TASIN FILM 审中-公开
标题翻译：形成电影的方法
公开(公告)号：US20090197410A1
公开(公告)日：2009-08-06
申请号：US12306096
申请日：2007-06-21
申请人： Kazuhito Nakamura , Hideaki Yamasaki , Yumiko Kawano
发明人： Kazuhito Nakamura , Hideaki Yamasaki , Yumiko Kawano
IPC分类号： H01L21/443
CPC分类号： C23C16/34 , C23C16/52 , H01L21/28097 , H01L21/28556 , H01L29/4975 , H01L29/517
摘要： A substrate is disposed in a processing chamber. An organic Ta compound gas having Ta═N bond, a Si-containing gas and a N-containing gas are introduced into the processing chamber to form a TaSiN film on the substrate by CVD. In this film formation, at least one of a partial pressure of the Si-containing gas in the processing chamber, a total pressure in the processing chamber, a film forming temperature and a partial pressure of the N-containing gas in the processing chamber is controlled to thereby regulate Si concentration in the film. Particularly, when SiH4 gas is used as the Si-containing gas, the SiH4 gas partial pressure is determined based on the fact that the serried Si concentration in the film under giving process conditions can be expressed as a linear function involving the logarithm of the partial pressure of the SiH4 gas.
摘要翻译：衬底设置在处理室中。将具有Ta-N键的有机Ta化合物气体，含Si气体和含N气体引入到处理室中，通过CVD在衬底上形成TaSiN膜。在该膜形成中，处理室中的含Si气体的分压，处理室中的总压，成膜温度和处理室中的含N气体的分压中的至少一个为从而调节膜中的Si浓度。特别地，当使用SiH 4气体作为含Si气体时，SiH 4气体分压基于以下事实来确定：在给定工艺条件下膜中的塞状Si浓度可以表示为包括部分的对数的线性函数 SiH4气体的压力。

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