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11. 发明授权

US4666808A Amorphous silicon electrophotographic sensitive member 失效
标题翻译：非晶硅电子照相敏感元件
公开(公告)号：US4666808A
公开(公告)日：1987-05-19
申请号：US594201
申请日：1984-03-28
申请人： Takao Kawamura , Hideaki Iwano , Naooki Miyamoto , Yasuo Nishiguchi
发明人： Takao Kawamura , Hideaki Iwano , Naooki Miyamoto , Yasuo Nishiguchi
IPC分类号： G03G5/082 , G03G5/14
CPC分类号： G03G5/08242
摘要： The invention relates to improvements in an electrophotographic sensitive member having a photoconductive layer formed with amorphous silicon produced by glow discharge decomposition or sputtering. An electrophotographic sensitive member is formed by laminating an amorphous silicon barrier layer and an amorphous photoconductive layer successively on an electrically conductive substrate, the first mentioned layer containing an impurity of Group IIIa of Periodic Table of Elements, or nitrogen and impurity of Group IIIa of same Table, and also containing oxygen within a range of 0.1 to 20.0 atomic % at the point of the layer and in a progressively decreasing pattern throughout the rest thereof. Constructed as such, the photosensitive member has an increased photosensitivity to near-infrared beams, a large charge-holding capability, and low-rate dark attenuation characteristics. In addition, it is less expensive to manufacture.
摘要翻译：本发明涉及具有由辉光放电分解或溅射产生的非晶硅形成的光电导层的电子照相敏感元件的改进。通过在导电性基板上依次层叠非晶硅阻隔层和非晶质光电导层而形成电子照相感光体，所述第一层含有元素周期表IIIa族的杂质，或含有相同的IIIa族的氮和杂质表中，并且在该层的点处还含有0.1至20.0原子％范围内的氧，并且在其余部分中以逐渐递减的图案含有氧。因此，感光构件对近红外光束具有增加的光敏性，大的电荷保持能力和低速率暗衰减特性。此外，制造成本较低。

12. 发明授权

US5621750A Surface emission type semiconductor laser, method and apparatus for producing the same 失效
标题翻译：表面发射型半导体激光器，其制造方法和装置
公开(公告)号：US5621750A
公开(公告)日：1997-04-15
申请号：US491955
申请日：1995-07-17
申请人： Hideaki Iwano , Katsumi Mori , Takayuki Kondo , Tatsuya Asaka
发明人： Hideaki Iwano , Katsumi Mori , Takayuki Kondo , Tatsuya Asaka
IPC分类号： H01S5/00 , H01S5/183 , H01S5/22 , H01S5/42 , H01S3/19 , H01L21/20
CPC分类号： H01S5/18341 , H01S5/423 , H01S2301/18 , H01S2304/04 , H01S5/0042 , H01S5/0612 , H01S5/1221 , H01S5/18361 , H01S5/18369 , H01S5/2211 , H01S5/2213 , H01S5/2214 , H01S5/4068
摘要： A surface emission type semiconductor laser has insulation layers (107, 108) embedding separation grooves for partially separating the waveguide path in an optical resonator formed by a pair of reflecting mirrors, namely a distributed reflection type multilayer film mirror (104) and a dielectric multilayer film mirror (111), and a quantum well active layer (105).A surface emission type semiconductor laser is designed such that the lasing wavelength .lambda..sub.G of an edge emission type semiconductor laser having the same semiconductor layers as those of the optical resonator is set to be shorter than a desired lasing wavelength .lambda..sub.EM of the surface emission type semiconductor laser by a given differential wavelength (gain offset) .DELTA..lambda..sub.EM.
摘要翻译： PCT No.PCT / JP95 / 00060 Sec。 371日期：1995年7月17日 102（e）日期1995年7月17日PCT 1995年1月20日PCT PCT。 WO95 / 20254 PCT出版物日期：1995年7月27日表面发射型半导体激光器具有在由一对反射镜形成的光谐振器（即，分布反射型多层膜反射镜（104））中嵌入用于将波导路径部分分离的分离槽的绝缘层（107,108））和电介质多层膜反射镜（111）和量子阱活性层（105）。表面发射型半导体激光器被设计成使得具有与光学谐振器相同的半导体层的边缘发射型半导体激光器的激发波长λG被设置为短于表面发射型的期望的激光波长λEM 半导体激光器通过给定的差分波长（增益偏移）DELTA lambda EM。

13. 发明授权

US5404369A Surface emission type semiconductor laser 失效
标题翻译：表面发射型半导体激光器
公开(公告)号：US5404369A
公开(公告)日：1995-04-04
申请号：US228491
申请日：1994-04-15
申请人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano , Takayuki Kondo
发明人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano , Takayuki Kondo
IPC分类号： H01L33/00 , H01S5/183 , H01S5/42 , H01S3/19
CPC分类号： H01S5/18369 , H01L33/0062 , H01S5/423 , H01S5/18308 , H01S5/18341 , H01S5/1835 , H01S5/18355 , H01S5/18394 , H01S5/2211 , H01S5/2224 , H01S5/4068
摘要： A surface emission type semiconductor laser includes a plurality of semiconductor layers defining at least one resonator in a direction perpendicular to the semiconductor substrate of the laser, the layers including at least a cladding layer in the semiconductor layers being formed into at least one column-like portion extending in a direction perpendicular to the semiconductor substrate, and a II-VI group compound semiconductor epitaxial layer buried around the column-like portions. "Lattice mismatch ratio" between the II-VI group compound semiconductor epitaxial layer and the column-like portions is no more than 0.2%, or more preferably no more than 0.16%. The II-VI group compound semiconductor layer is formed from an adduct consisting of II group organometallic compound and VI group organometallic compound and a VI group hydride by the use of a chemical vapor deposition. If a plurality of column-like portions are to be formed by a separation groove, these column-like portions are separated from one another, the II-VI group compound semiconductor epitaxial layer being buried in the separation groove.
摘要翻译：表面发射型半导体激光器包括在与激光器的半导体衬底垂直的方向上限定至少一个谐振器的多个半导体层，所述至少一层半导体层中的包层被形成为至少一个柱状在垂直于半导体衬底的方向上延伸的部分，以及围绕柱状部分埋设的II-VI族化合物半导体外延层。 II-VI族化合物半导体外延层和柱状部分之间的“晶格失配比”不超过0.2％，更优选不大于0.16％。 II-VI族化合物半导体层通过使用化学气相沉积由II族有机金属化合物和VI族有机金属化合物和VI族氢化物组成的加合物形成。如果由分离槽形成多个柱状部分，则这些柱状部分彼此分离，将II-VI族化合物半导体外延层埋入分离槽中。

14. 发明授权

US5375133A Surface emitting semiconductor laser and method of manufacture 失效
标题翻译：表面发射半导体激光器及其制造方法
公开(公告)号：US5375133A
公开(公告)日：1994-12-20
申请号：US206104
申请日：1994-03-03
申请人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano
发明人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano
IPC分类号： H01S5/028 , H01S5/183 , H01S5/22 , H01S3/19 , H01L21/00
CPC分类号： H01S5/18308 , H01S5/0281 , H01S5/18369 , H01S2304/04 , H01S5/18341 , H01S5/2068 , H01S5/2211 , H01S5/2224 , H01S5/4068 , H01S5/423
摘要： A surface emitting semiconductor laser is provided with at least reflection mirrors on the substrate side composed of a first layer that is made of a Group III-V compound semiconductor and a second layer that is made of a Group III-V compound semiconductor with an energy bandgap that is larger than that of the first layer. The first and second layers are alternately stacked. The semiconductor laser is also composed of a distributive reflection multiple layer mirror that has an interface region between first and second layers having a carrier concentration that is higher than that of other regions. As a result, the multiple layer band structure of the distributive reflection mirror has been improved, current easily flows vertically through the multiple layers and the element resistance is low. In addition, a simple and reliable method is employed to fabricate the distributive reflection mirror because the doping concentration is controlled through dopant gas flow control or is controlled through light exposure.
摘要翻译：表面发射半导体激光器在基板侧至少设置反射镜，该反射镜由由III-V族化合物半导体制成的第一层和由具有能量的III-V族化合物半导体制成的第二层带隙大于第一层的带隙。第一层和第二层交替堆叠。半导体激光器还由分布式反射多层反射镜构成，其具有第一和第二层之间的界面区域，其载流子浓度高于其它区域的载流子浓度。结果，分布式反射镜的多层带结构得到改善，电流容易沿着多层垂直流动，元件电阻低。另外，采用简单可靠的方法制造分布式反射镜，因为掺杂浓度通过掺杂剂气体流量控制来控制或通过曝光来控制。

15. 发明授权

US5317584A Surface emission type semiconductor laser 失效
标题翻译：表面发射型半导体激光器
公开(公告)号：US5317584A
公开(公告)日：1994-05-31
申请号：US997177
申请日：1992-12-28
申请人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano , Takayuki Kondo
发明人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano , Takayuki Kondo
IPC分类号： H01L33/00 , H01S5/183 , H01S5/42 , H01S3/19
CPC分类号： H01S5/18308 , H01L33/0062 , H01S5/423 , H01S2301/08 , H01S5/18338 , H01S5/1835 , H01S5/18369 , H01S5/2211 , H01S5/2224 , H01S5/4068
摘要： A surface emission type semiconductor laser includes a plurality of semiconductor layers defining at least one resonator in a direction perpendicular to the semiconductor substrate of the laser, the layers including at least a cladding layer in the semiconductor layers being formed into at least one column-like portion extending in a direction perpendicular to the semiconductor substrate, and a II-VI group compound semiconductor epitaxial layer buried around the column-like portions. The II-VI group compound semiconductor layer is formed from an adduct consisting of II group organometallic compound and VI group organometallic compound and a VI group hydride by the use of a chemical vapor deposition. If a plurality of column-like portions are to be formed by a separation groove, these column-like portions are separated from one another, the II-VI group compound semiconductor epitaxial layer being buried in the separation groove.
摘要翻译：表面发射型半导体激光器包括在与激光器的半导体衬底垂直的方向上限定至少一个谐振器的多个半导体层，所述至少一层半导体层中的包层被形成为至少一个柱状在垂直于半导体衬底的方向上延伸的部分，以及围绕柱状部分埋设的II-VI族化合物半导体外延层。 II-VI族化合物半导体层通过使用化学气相沉积由II族有机金属化合物和VI族有机金属化合物和VI族氢化物组成的加合物形成。如果由分离槽形成多个柱状部分，则这些柱状部分彼此分离，将II-VI族化合物半导体外延层埋入分离槽中。

16. 发明授权

US5625637A Surface emitting semiconductor laser and its manufacturing process 失效
标题翻译：表面发射半导体激光器及其制造工艺
公开(公告)号：US5625637A
公开(公告)日：1997-04-29
申请号：US359964
申请日：1994-12-19
申请人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano
发明人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano
IPC分类号： H01S5/028 , H01S5/183 , H01S5/22 , H01S3/19
CPC分类号： H01S5/18369 , H01S2304/04 , H01S5/18308 , H01S5/18341 , H01S5/2211 , H01S5/2224
摘要： A surface emitting semiconductor laser, with a resonator cavity transverse to the planar extent of the deposited layers, is provided with a first reflection mirror on the substrate side composed of alternating layers comprising a first layer that is made of a Group III-V compound semiconductor and a second layer that is made of a Group III-V compound semiconductor with an energy bandgap that is larger than that of the first layer. A second reflection mirror is provided at the opposite end of the cavity adjacent to a column like resonator portion. At least the first reflection mirror comprises a distributive Bragg reflection (DBR) multiple layer mirror that has an interface region between first and second layers having a carrier concentration that is higher than that of other regions. The column like resonator portion is surrounded by a buried layer which may consist of two layers, the first layer functioning as barrier layer and the second layer functioning as a flattening layer. The first layer may be comprised of a silicon compound and the second layer may be comprised of SOG or a resin compound. The multiple layer band structure of the DBR mirror is improved, current easily flows vertically through the multiple layers and the element resistance is low. In addition, a simple and reliable method is employed to fabricate the DBR mirror and the dual buried layer, respectively, because the doping concentration is controlled through dopant gas flow control or is controlled through light and can be easily accomplished without using comparatively high temperature processing.
摘要翻译：具有横向于沉积层的平面范围的谐振腔的表面发射半导体激光器在基板侧上设置有由交替层组成的第一反射镜，该交替层包括由III-V族化合物半导体以及由具有比第一层的能带隙大的能带隙的III-V族化合物半导体制成的第二层。第二反射镜设置在与柱状谐振器部分相邻的腔的相对端。至少第一反射镜包括分布布拉格反射（DBR）多层反射镜，其在第一和第二层之间具有高于其它区域的载流子浓度的界面区域。柱状谐振器部分被埋入层包围，该掩埋层可以由两层组成，第一层用作阻挡层，第二层用作平坦化层。第一层可以由硅化合物组成，第二层可以由SOG或树脂化合物构成。 DBR镜的多层带结构得到改善，电流容易垂直流过多层，元件电阻较低。另外，采用简单可靠的方法来制造DBR镜和双埋层，因为掺杂浓度通过掺杂剂气体流量控制来控制或通过光控制并且可以容易地实现而不使用比较高的温度处理。

17. 发明授权

US5537666A Surface emission type semiconductor laser 失效
标题翻译：表面发射型半导体激光器
公开(公告)号：US5537666A
公开(公告)日：1996-07-16
申请号：US319650
申请日：1994-10-07
申请人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano , Takayuki Kondo
发明人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano , Takayuki Kondo
IPC分类号： H01L33/00 , H01S5/183 , H01S5/42 , H01S3/19
CPC分类号： H01S5/18369 , H01L33/0062 , H01S5/423 , H01S2301/166 , H01S2301/18 , H01S5/18308 , H01S5/18338 , H01S5/18341 , H01S5/18394 , H01S5/2211 , H01S5/2224 , H01S5/4068
摘要： In order to manufacture a surface emission type semiconductor laser, a plurality of semiconductor layers including a multilayered semiconductor mirror, a cladding layer, an active layer and other layers are sequentially formed on a substrate through the organic metal vapor growth method. A photoresist mask is then formed on the semiconductor layers. At least the cladding layer in the semiconductor layers is anisotropically etched by the use of the photoresist mask. At least one column-like portion is thus formed to have sidewalls extending perpendicular to the substrate and to guide the light in a direction perpendicular to the substrate. Thereafter, a buried layer including a single layer formed therein at an area covering at least the sidewalls of the column-like portion is formed around the column-like portion. A multilayered dielectric mirror is deposited in the column-like portion on the light exit end thereof. The multilayered dielectric mirror is disposed at the light exit port of a light exit side electrode. To increase the reflectivity below the light exit side electrode, a multilayered semiconductor mirror may be formed in the column-like portion at a position nearer the light exit side than the cladding layer.
摘要翻译：为了制造表面发射型半导体激光器，通过有机金属蒸气生长法在衬底上依次形成包括多层半导体镜，包层，有源层等的多个半导体层。然后在半导体层上形成光致抗蚀剂掩模。至少通过使用光致抗蚀剂掩模对半导体层中的包覆层进行各向异性蚀刻。因此，至少一个柱状部分形成为具有垂直于衬底延伸的侧壁并且在垂直于衬底的方向上引导光。此后，在柱状部分周围形成包括在至少覆盖柱状部分的侧壁的区域上形成的单层的埋层。在其出射端的柱状部分中沉积多层电介质镜。多层电介质反射镜设置在光出射侧电极的光出射口。为了增加光出射侧电极之下的反射率，可以在比包层更靠近光出射侧的位置的柱状部分中形成多层半导体镜。

18. 发明授权

US5436922A Surface emission type semiconductor laser 失效
标题翻译：表面发射型半导体激光器
公开(公告)号：US5436922A
公开(公告)日：1995-07-25
申请号：US205363
申请日：1994-03-03
申请人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano , Takayuki Kondo
发明人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano , Takayuki Kondo
IPC分类号： H01L33/00 , H01S5/183 , H01S5/42 , H01S3/19
CPC分类号： H01S5/18308 , H01L33/0062 , H01S5/423 , H01S2304/04 , H01S5/18344 , H01S5/18355 , H01S5/18369 , H01S5/18394 , H01S5/2211 , H01S5/2224 , H01S5/4068
摘要： A surface emission type semiconductor laser includes a plurality of semiconductor layers defining at least one resonator in a direction perpendicular to the semiconductor substrate of the laser, the layers including at least a cladding layer in the semiconductor layers being formed into at least one column-like portion extending in a direction perpendicular to the semiconductor substrate, and a buried layer surrounding the column-like portion. The column-like portion is of rectangular cross-section in a plane parallel to the semiconductor substrate and having longer and shorter sides, whereby the polarization plane of said omitted laser beam is parallel to the direction of said shorter sides.
摘要翻译：表面发射型半导体激光器包括在与激光器的半导体衬底垂直的方向上限定至少一个谐振器的多个半导体层，所述至少一层半导体层中的包层被形成为至少一个柱状在垂直于半导体衬底的方向上延伸的部分以及围绕柱状部分的掩埋层。柱状部分在与半导体衬底平行的平面中具有矩形横截面并具有较长和较短的侧面，由此所述省略的激光束的偏振面平行于所述短边的方向。

19. 发明授权

US5356832A Method of making surface emission type semiconductor laser 失效
标题翻译：制造表面发射型半导体激光器的方法
公开(公告)号：US5356832A
公开(公告)日：1994-10-18
申请号：US999137
申请日：1992-12-31
申请人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano
发明人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano
IPC分类号： H01L33/00 , H01S5/183 , H01S5/42 , H01L21/20
CPC分类号： H01S5/18308 , H01L33/0062 , H01S5/423 , H01S2301/08 , H01S2304/04 , H01S5/18338 , H01S5/1835 , H01S5/18369 , H01S5/2211 , H01S5/2224 , H01S5/4068 , Y10S148/095 , Y10S438/97
摘要： A surface emission type semiconductor laser includes a plurality of semiconductor layers defining at least one resonator in a direction perpendicular to the semiconductor substrate of the laser, the layers including at least a cladding layer in the semiconductor layers being formed into at least one column-like semiconductor layer extending in a direction perpendicular to the semiconductor substrate, and a II-VI group compound semiconductor epitaxial layer buried around the at least one column-like semiconductor layer. If a plurality of column-like semiconductor layers are to be formed by a separation groove, these column-like semiconductor layers are separated from one another, the II-VI group compound semiconductor epitaxial layer being buried in the separation groove.
摘要翻译：表面发射型半导体激光器包括在与激光器的半导体衬底垂直的方向上限定至少一个谐振器的多个半导体层，所述至少一层半导体层中的包层被形成为至少一个柱状半导体层在垂直于半导体衬底的方向上延伸，以及埋在至少一个柱状半导体层周围的II-VI族化合物半导体外延层。如果要由分离槽形成多个柱状半导体层，则这些柱状半导体层彼此分离，将II-VI族化合物半导体外延层埋入分离槽中。

20. 发明授权

US5181219A Surface emission type semiconductor laser 失效
公开(公告)号：US5181219A
公开(公告)日：1993-01-19
申请号：US756979
申请日：1991-09-09
申请人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano
发明人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano
IPC分类号： H01L33/00 , H01S5/183 , H01S5/42
CPC分类号： H01S5/18338 , H01L33/0062 , H01S5/423 , H01S2301/166 , H01S5/18308 , H01S5/18369 , H01S5/18394 , H01S5/2211 , H01S5/2224 , H01S5/4068
摘要： A surface emission type semiconductor laser includes a plurality of semiconductor layers defining at least one resonator in a direction perpendicular to the semiconductor substrate of the laser, the layers including at least a cladding layer in the semiconductor layers being formed into at least one column-like light emitting portion extending in a direction perpendicular to the semiconductor substrate, and a II-VI group compound semiconductor epitaxial layer buried around the column-like portion. An active layer of multi-quantum well structure is further formed on the layer section of the cladding layer having the column-like portion. If a plurality of column-like portions are formed, these column-like portions are separated from one another by a separation groove terminating short of the active layer, the II-VI group compound semiconductor epitaxial layer being buried in the separation groove. Particularly, when it is desired to produce a phase synchronization type semiconductor laser, a waveguide layer is formed below the active layer, and the waveguide layer is adapted to propagate light rays in a direction parallel to the active layer.

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