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    • 12. 发明专利
    • SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
    • JPH1126762A
    • 1999-01-29
    • JP18209797
    • 1997-07-08
    • HITACHI LTDHITACHI MICROCOMPUTER SYST
    • FUKADA SHINICHIKAEDE HIROSHIKOJIMA MASAKIABE HIROMISUZUKI MASAYASU
    • H01L21/28H01L21/336H01L29/78
    • PROBLEM TO BE SOLVED: To form a cobalt silicide film by suppressing the increase in junction leak at the p-n junction under the film by forming a Co film on the cobalt silicide layer after the cobalt silicide layer on source and drain electrodes is once grown, performing the process for forming the silicide at least once, and forming the film to the specified film thickness. SOLUTION: A thermal CVD-SiO2 film 8 is formed as an implantation through film on the entire surface of an Si substrate. After the film is removed, a CO film 10 is formed, and a TiN film 11 is formed on the film 10. Heat treatment is performed under the nitrogen atmosphere. A cobalt silicide layer 12 is selectively formed only on the electrode wherein Co and Si are in contact. After the Co film and TiN film remaining unreactive are removed, heat treatment is performed under the nitrogen atmosphere, and the cobalt silicide layer 12 is converted into CoSi2 . A side Co film 13 is formed on the entire surface of the substrate, and a TiN film 14 is formed thereon. The CoSi2 film is different from the CoSi2 film which is formed by heat treatment, wherein the entire quantity of the Co film is formed at one time whiteout separating the CoSi forming process. The cobalt silicide film can be formed without increasing the junction leakage current.
    • 16. 发明专利
    • SEMICONDUCTOR LASER INTERNAL RESONANCE TYPE SHG LIGHT SOURCE
    • JPH07335963A
    • 1995-12-22
    • JP12727394
    • 1994-06-09
    • HITACHI LTD
    • KAWAMOTO KAZUTAMIITOU AKITOMOKAEDE HIROSHI
    • H01S3/109G02F1/37H01S5/00H01S5/06H01S3/103H01S3/18
    • PURPOSE:To obtain a high efficiency, low noise and stable output short wavelength coherent light source by a method wherein a fundamental wave is a longitudinal single mode wave in which other mode waves are suppressed by -25 dB or less. CONSTITUTION:A second harminic wave is generated by a polarization reversing lattice 3 in the light waveguide 2 of an optical substrate 1. Optical coating which is non-reflective or totally reflective for a fundamental wave and the second harmonic wave is applied to the end surface of the substrate 1. A semiconductor laser 5 is composed of a distribution Bragg reflector(DBR) which has high and low end surface reflectances and is wave-selective. The wave selectivity of the DBR 4 is shown by a complex reflectance R expressed by the formula (wherein K denotes a coupling factor, alpha1 denotes the light loss factor of the light waveguide, LB denotes the length of the DBR and delta denotes a discrepancy from a Bragg wave number). Therefore, the reflectance which satisfies the Bragg conditions when delta=0 is 87.5% and, if the longitudinal mode spacing of a resonator is not less than 0.01nm, a standardized reflectance difference is not larger than -0.05 and the fundamental wave is oscillated as a single mode and the other mode waves can be suppressed below a required noise level.
    • 17. 发明专利
    • PRODUCTION OF WAVEGUIDE TYPE DIFFRACTION GRATING
    • JPH06174908A
    • 1994-06-24
    • JP33019692
    • 1992-12-10
    • HITACHI LTD
    • KAEDE HIROSHIITOU AKITOMOKAWAMOTO KAZUTAMI
    • G02B5/18G02B6/12G02B6/13
    • PURPOSE:To produce the fine optical waveguide type diffraction grating consisting of a ferroelectric substance for coupling a waveguide mode and a radiation mode with high efficiency by previously using a ferroelectric sub stance substrate subjected to polarization inversion to a desired diffraction grating pattern shape. CONSTITUTION:The substrate 51 consisting of LiNbO3 doped with 5mol% MgO subjected to optical polishing on the +c surface is ultrasonically cleaned and is rapidly dried. A Ti film 81 is then formed by sputtering on the +c surface. A photoresist 82 is thereafter applied on this Ti film 81. This photoresist 82 is patterned by using a photomask windowed with the recessed parts of the diffraction grating. The Ti film 81 is patterned with this patterned photoresist as a mask. The substrate is then put into a diffusion furnace and is heat treated in an Ar atmosphere to form the domain inversion regions 56 on the +c surface of the substrate 51. A thin film 52 of LiNbO3 single crystal is formed by a liquid phase epitxial crystal growth method. The directions of the polarization parts 54, 55 is the same as the polarization direction of the substrate 51 regardless of periods when the of the thin film 52 and the substrate 51 is etched. The perpendicular boundary is thus formed at this boundary.