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11. 发明专利

DE69025241D1 未知
公开(公告)号：DE69025241D1
公开(公告)日：1996-03-21
申请号：DE69025241
申请日：1990-08-20
申请人： HITACHI LTD
发明人： ISHIKAWA FUMINORI , SATO AKIRA , TAMAHASHI KUNIHIRO , WAKAGI MASATOSHI , TAMURA KATSUMI , HANAZONO MASANOBU , SHOJI MITSUYOSHI , NAKAKAWAJI TAKAYUKI , ITO YUTAKA , KOMATSUZAKI SHIGEKI , AKAGI MOTOO , IMAMURA MASAAKI
IPC分类号： G03G5/147
摘要： An electrophotographic photoreceptor comprising a photoconductive layer (103) comprising a photoconductor, a support (101, 102) for the photoconductive layer (103) and a surface layer (107) formed on the photoconductive layer (103) and comprising a curable resin film (105) and inorganic insulator pieces (106) having a size larger than the film thickness of the curable resin film (105). In order to prevent the image blurring of an a-Si:H photoreceptor, on the outermost surface of the photoreceptor was formed a surface layer having a structure in which inorganic insulator pieces (106) have protruded from the curable resin film (105). Since the curable resin (105) is of high resistance and shows no quality change by corona irradiation, and besides the protruding inorganic insulator pieces (106) prevent the abrasion of the resin, the surface layer (107) having a long life and excellent humidity resistance, durability for corona irradiation and abrasion resistance can be realized. Further, by covering the surface layer (107) with a fluorine-containing lubricant, the surface layer (107) having a low friction coefficient and excellent cleaning characteristics is obtained, and besides the resin constituting the surface layer (107) absorbs little moisture. As a result, it becomes possible to use the a-Si:H photoreceptors without a heater. Also, the surface layer (107) of the present invention can be removed and then re-formed.

12. 发明公开

EP1008893A4 ACTIVE MATRIX LIQUID CRYSTAL DISPLAY 失效
标题翻译：有源矩阵液晶显示器
公开(公告)号：EP1008893A4
公开(公告)日：2001-09-05
申请号：EP96939310
申请日：1996-11-27
申请人： HITACHI LTD
发明人： ANDO MASAHIKO , WAKAGI MASATOSHI , FUKAYA RITSUO
IPC分类号： G02F1/1333 , A01N25/02 , A01N33/12 , C11D3/48 , G02F1/133 , G02F1/1343 , G02F1/1368 , H01L21/28 , H01L21/336 , H01L29/51 , H01L29/786 , G02F1/136
CPC分类号： G02F1/1368 , G02F1/134363 , H01L21/28008 , H01L21/28194 , H01L21/28202 , H01L29/513 , H01L29/518 , H01L29/66765 , H01L29/78669
摘要： A thin film transistor used as a switching element of an active matrix liquid crystal display is an enhancement-mode thin film transistor including a silicon nitride film (13) formed over a scanning electrode (12), an insulating layer (14) formed over the silicon nitride film (13), and a semiconductor layer having a source region (17) and a drain region (18) formed over the insulating layer (14). The thin film transistor has a threshold voltage higher than the maximum of the liquid crystal operating voltage. The insulating layer (14) is a silicon oxide film having a thickness of 30 angstroms or more.

13. 发明专利

JP2005043482A Optical switch and method for manufacturing the same 有权
标题翻译：光学开关及其制造方法
公开(公告)号：JP2005043482A
公开(公告)日：2005-02-17
申请号：JP2003200711
申请日：2003-07-23
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： WAKAGI MASATOSHI , ANDO MASAHIKO
IPC分类号： G02B26/08 , B81C1/00
摘要： PROBLEM TO BE SOLVED: To provide an optical switch which allows a desired switch to be turned on and is highly reliable and highly integrated. SOLUTION: In a matrix type optical switch which changes an optical path by selectively heating respective heaters 1, a TFT using Si 1-x Ge x (0 COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种允许所需开关打开并且高度可靠和高度集成的光开关。解决方案：在通过选择性地加热各个加热器1来改变光路的矩阵型光开关中，使用Si 1-x SB

14. 发明专利

JP2002258321A LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JP2002258321A
公开(公告)日：2002-09-11
申请号：JP2001055365
申请日：2001-02-28
申请人： HITACHI LTD
发明人： NISHIMURA ETSUKO , ABE MAKOTO , WAKAGI MASATOSHI , KIZAWA KENICHI , OKISHIRO KENJI , NAKAYOSHI YOSHIAKI , ISHII MASAHIRO , TANNO JUNJI
IPC分类号： G02F1/1333 , G02F1/1343 , G02F1/1368 , G09F9/30 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a lateral electric field type liquid crystal display device which has a large pixel aperture ratio, high luminance, and a good yield without causing the signal delay of a wire and a rise in the driving voltage of liquid crystal. SOLUTION: In an arrangement structure which has capacity formed at a portion where at least one of a video signal wire DL and a scanning signal wire GL and a common signal electrode CE are partially put one over the other across an inter-layer insulating film PAS, at least one layer OIL1 of an insulating film included in the inter-layer insulating film PAS is selectively formed in a partial area on a pixel electrode PX. At the wire overlap part, one inter-layer insulating film OIL1 for parasitic capacity reduction is newly added and selectively formed on the pixel electrode PX, and then the parasitic capacity at the wire overlap part is reducible without causing any rise in the driving voltage of the liquid crystal to prevent wires from short-circuiting to each other. Thus, the liquid crystal display device which has high transmissivity and high performance can be manufactured with good yield.

15. 发明专利

JP2002251925A THIN FILM FORMING METHOD, ITS THIN FILM, AND PLANE DISPLAY DEVICE USING THE SAME 失效
公开(公告)号：JP2002251925A
公开(公告)日：2002-09-06
申请号：JP2001047003
申请日：2001-02-22
申请人： HITACHI LTD
发明人： CHIYABARA KENICHI , WAKAGI MASATOSHI , KIZAWA KENICHI , SATO TADASHI , KAWAKUBO YUKIO , YOSHIKAWA TOSHIMITSU
IPC分类号： H01L21/288 , H01B5/14 , H01B13/00 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide the thin film forming method of a transparent conductive film with low resistance and high visible light transmission factor without using a baking process of high temperature and long time in a transparent conductive film forming method using a coating process. SOLUTION: This thin film forming method is composed of a process forming a coating film 48 by applying a coating solution to a substrate; a process introducing gas into a treating chamber where electron beams 3 are irradiated to the coating film; a process introducing the electron beams 34 into the treating chamber 12 through a transmission passage arranged between an electron beam source 10 and the treating chamber and separating them; a process irradiating the electron beams to the coating film 48; and a process irradiating plasma 50 generated by ionization of the gas caused by the irradiation of the electron beams to the coating film 48.

16. 发明专利

JP2002182221A LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JP2002182221A
公开(公告)日：2002-06-26
申请号：JP2000384173
申请日：2000-12-18
申请人： HITACHI LTD
发明人： YANAGAWA KAZUHIKO , IWAKABE YASUSHI , NAKAYOSHI YOSHIAKI , WAKAGI MASATOSHI
IPC分类号： G02F1/133 , G02F1/13 , G02F1/1333 , G02F1/1339 , G02F1/1343 , G02F1/1345 , G02F1/136 , G02F1/1368
摘要： PROBLEM TO BE SOLVED: To prevent light from leaking in the neighborhood of a spacer. SOLUTION: This is a liquid crystal display device wherein transmittance of a liquid crystal layer lying between substrates placed to oppose each other is controlled by an electric field in the direction of the thickness of the layer; the device is provided with a support formed on the liquid crystal side of one of the substrates, a signal line formed on the liquid crystal side of the other substrate, an insulating film formed covering the signal line, and one of electrodes formed on this insulating film and contributing to control the light transmittance of the liquid crystal layer; the support is arranged with the top face opposed to the signal line; and also the electrode is extended over the signal line and the extending part is partly faced to the top face of the support.

17. 发明专利

JP2000298289A LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JP2000298289A
公开(公告)日：2000-10-24
申请号：JP10673899
申请日：1999-04-14
申请人： HITACHI LTD
发明人： ISHII MASAHIRO , OTA MASUYUKI , SUZUKI NOBUYUKI , ANDO MASAHIKO , WAKAGI MASATOSHI , ASHIZAWA KEIICHIRO
IPC分类号： H04N5/66 , G02F1/136 , G02F1/1365 , G02F1/1368 , G09F9/30 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide thin film transistors having superior characteristics and thereby to improve display quality. SOLUTION: In this device, transparent substrates are disposed facing each other via a liquid crystal, and thin film transistors are formed in the pixel region of the liquid crystal side of one of the transparent substrates. This thin- film transistor consists of a semiconductor layer AS formed on a scanning signal line GL with an insulating film interposed therebetween and a drain electrode DE to be connected to a video signal line DL and a source electrode SE to be connected to a pixel electrode, both formed on the semiconductor layer AS. The source electrode SE is formed to cover the semiconductor layer AS, while the drain electrode DE is formed without extending out of the semiconductor layer AS.

18. 发明专利

JPH11284210A SOLAR CELL, INFRARED OPTICAL SENSOR AND THERMOELECTRIC GENERATOR ELEMENT 失效
公开(公告)号：JPH11284210A
公开(公告)日：1999-10-15
申请号：JP8544698
申请日：1998-03-31
申请人： HITACHI LTD
发明人： MIYAKE KIYOSHI , OHASHI TAKEYA , WAKAGI MASATOSHI , KIZAWA KENICHI
IPC分类号： H01L31/04 , H01L29/47 , H01L29/872 , H01L31/0264
摘要： PROBLEM TO BE SOLVED: To make a solar cell inexpensively with a very simple structure, by laying a metal- or insulator-made buffer layer within specified thickness range on a metal substrate and laying a specified layer having a photoconductivity thereon as an electrode. SOLUTION: An Al-0.5% Si thin film of 200 mm square and 100 nm thick is formed as a buffer layer 2 by the sputtering method on an Fe-14% Cr-0.1% Ti steel sheet 1 of 200 mm square and 200 μm thick as a substrate, a p-type β-FeSi2 photoconductive layer 3 of 190 mm square and 100 nm thick is formed thereon, and five strips of a semitransparent Al film 4 of 180 mm×10 mm and 5 nm thick are formed at equal spacings like a stripe thereon by the sputtering method utilizing a mask to form an Al film electrode 4. Thus the Al film electrode 4 and p-type β-FeSi2 layer 3 form a Schottky junction, thereby obtaining an inexpensive solar cell, infrared sensor and thermoelectric generator element.

19. 发明专利

JPH11231322A LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JPH11231322A
公开(公告)日：1999-08-27
申请号：JP2950498
申请日：1998-02-12
申请人： HITACHI LTD
发明人： UCHIUMI YUUKA , TOMIOKA YASUSHI , WAKAGI MASATOSHI , MAEKAWA YASUNARI , ARAYA SUKEKAZU , KONDO KATSUMI
IPC分类号： G02F1/1333 , G02F1/133 , G02F1/1337 , G02F1/1339 , G02F1/136 , G02F1/1368
摘要： PROBLEM TO BE SOLVED: To improve the contrast of a lateral electric field type liquid crystal display device in which a birefringent mode is used by providing a film between a spacer and the liquid crystalline materials to form a material which enables to impart liquid crystal aligning performance by polarized-light irradiation by the polarized-light irradiation. SOLUTION: This device has common electrodes 2 and scanning wiring electrode, an insulating film 4', pixel electrodes 3 and signal wirings 10, an insulating film 4, and an organic high polymer film 7 formed on a substrate 1. On the organic high polymer film 7, an alignment control film 8 and spacer beads 40 are arranged and this alignment control film 8 is formed to be interposed partially between the spacer beads 40 and a liquid crystal layer 30. The alignment control film 8 of this constitution is formed of the material which enables to impart the liquid crystal aligning performance by polarized-light irradiation. The liquid crystal aligning performance is given between the spacer beads 40 and liquid crystal layer 30 by the polarized-light irradiation, so that the liquid crystal layer 30 near the spacer beads 40 is free of disordered alignment and aligned in the same direction as the alignment direction of the alignment control film 8. Consequently, a light leak near the spacer beads 40 is reduced to improve the contrast.

20. 发明专利

JPH0945952A X-RAY DETECTOR AND TWO-DIMENSIONAL SENSOR MATRIX ARRAY 失效
公开(公告)号：JPH0945952A
公开(公告)日：1997-02-14
申请号：JP19036395
申请日：1995-07-26
申请人： HITACHI LTD
发明人： WAKAGI MASATOSHI , ANDO MASAHIKO , WATANABE TAKESHI , MINEMURA TETSUO
IPC分类号： G01T1/20 , G03B42/02 , H01L27/14 , H01L27/146 , H01L31/09 , H05G1/26
摘要： PROBLEM TO BE SOLVED: To obtain an X-ray detector where an X-ray phosphor having improved sensitivity and resolution to X-rays is combined with a photoconductive layer. SOLUTION: A metal film is deposited on a substrate 1 and a lower electrode 2 is machined by a mask process and then na-Si 3, ia-Si 4 and pa-Si 5 are deposited thereon thus forming a photoconductor D of ina-Si. Subsequently, a conductive phosphor 6 is deposited to form an upper electrode. Furthermore, the pina-Si is machined insularly and an insulation film 7 is formed thereon. Finally, a conductive layer of Al is formed and provided, at the opposite ends thereof, with a wiring layer 8 of Al thus constituting an X-ray detector.

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