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11. 发明专利

JPH06104166A PATTERN FORMATION METHOD 失效
公开(公告)号：JPH06104166A
公开(公告)日：1994-04-15
申请号：JP24917192
申请日：1992-09-18
申请人： HITACHI LTD
发明人： TAKEMOTO KAZUNARI , AMATATSU ATSUSHI , HIRAIWA TOMOKO , SAITO HARUNOBU
IPC分类号： G11B5/31 , H01L21/027
摘要： PURPOSE:To enable highly accurate patterning of a thin film on a highly stepped substrate by physical etching such as ion milling. CONSTITUTION:A pattern is transcribed one by one by a lamination film of a photosensitive electrodeposition film 4, a conductive film 3 and a carbon film 2 to enable highly accurate etching of a processing thin film 1 of a low layer. Since the electrodeposition film has a good step coverage, a resist can be made thin at a recessed part of a step. Therefore, it is possible to prevent redeposition during ion milling and to improve dimensional accuracy.

12. 发明专利

JPS6329402B2 失效
公开(公告)号：JPS6329402B2
公开(公告)日：1988-06-14
申请号：JP11586283
申请日：1983-06-29
申请人： HITACHI LTD
发明人： HYOSHI YASUO , SUDO RYOICHI , TAKEMOTO KAZUNARI , ISOGAI TOKIO
IPC分类号： C08G59/00 , C08K3/24 , C08K3/32 , C08L63/00 , C09D163/00 , H01B3/40 , H01F19/04 , H01F38/42 , H04N3/19

13. 发明专利

JPS6320450B2 失效
公开(公告)号：JPS6320450B2
公开(公告)日：1988-04-27
申请号：JP5381582
申请日：1982-04-02
申请人： HITACHI LTD
发明人： SHOJI FUSAJI , TAKEMOTO KAZUNARI , KATAOKA FUMIO , YOKONO ATARU , ISOGAI TOKIO
IPC分类号： C08G77/00 , C08G77/42 , C08G77/44 , C08G77/52

14. 发明专利

JPS6375042A PLASMA TREATMENT OF INNER SURFACE OF PLASTIC TUBE 失效
公开(公告)号：JPS6375042A
公开(公告)日：1988-04-05
申请号：JP21932686
申请日：1986-09-19
申请人： HITACHI LTD
发明人： TAKEMOTO KAZUNARI , KITO MAKOTO
IPC分类号： C08J7/00
摘要： PURPOSE:To form a plasma-polymerized film exclusively on the inner wall of a plastic tube, by using a tubular reaction chamber and a plastic tube having an inner diameter equal to that of the reaction chamber at both ends of the plastic tube, arranging the tube in a manner that the center axes of the tube and the reaction chamber are on the same line and introducing a treatment gas into the plastic tube. CONSTITUTION:A plastic tube is placed in a tubular reaction chamber and the inner surface of the tube is subjected to plasma-treatment by introducing a treatment gas from an end of the chamber and exhausting from the other end. In the above process, the inner diameter of the reaction chamber is made to be equal to that of the plastic tube at both ends of the plastic tube and the center axes of the tube and the chamber are aligned on the same line. The shape of the cross-section of the reaction chamber from the introducing part to the end of the plastic tube is free from a sharp step, preferably is a streamline shape.

15. 发明专利

JPS61231165A METHOD FOR PREVENTING ELECTROSTATIC CHARGE OF PLASTIC 失效
公开(公告)号：JPS61231165A
公开(公告)日：1986-10-15
申请号：JP7089285
申请日：1985-04-05
申请人： HITACHI LTD
发明人： TAKEMOTO KAZUNARI , KITO MAKOTO
IPC分类号： C23C14/20 , C08J7/06 , G03C1/85 , G11B5/73 , G11B5/85
摘要： PURPOSE:To form a conductive thin film and to prevent surface electrostatic charge by executing sputtering of conductive matter onto the surface of plastics by use of an organic gas. CONSTITUTION:Mutually parallel electrodes 2, 5 are oppositely provided in a reaction chamber 6 of a sputtering device and a plastic film 1 to be treated is put on the electrode 2. After evacuating the inside of the reaction chamber 6 to about 10 Pa by use of an exhaust pipe 9, a gas made by mixing an inert gas such as Ar with an organic gas such as methane in 50:50 is introduced through a gas-introducing pipe 3 to adjust the pressure to 0.01-10Pa. Then a high frequency voltage is impressed from an electric power source 8 via matching box 7 to the electrode 5 to which any of Au, Pd, stainless steel and a mixture of SnO2 and In2O3 is attached as a target 4 to produce plasma between the electrodes 2, 5, so that the homogeneous conductive thin film in which the conductive matter is mixed with the organic gas component can be formed on the surface of the plastic 1 to prevent surface electrification.

17. 发明专利

JPS6058592B2 失效
公开(公告)号：JPS6058592B2
公开(公告)日：1985-12-20
申请号：JP12259678
申请日：1978-10-06
申请人： HITACHI LTD
发明人： SUDO RYOICHI , WATANABE TAKESHI , SHOJI FUSAJI , TAKEMOTO KAZUNARI , YOKONO ATARU , ISOGAI TOKIO
IPC分类号： H01L21/768 , H01L21/312 , H01L23/29 , H01L23/31 , H01L23/522

19. 发明专利

JPS60137932A ACETYLENE-SUBSTITUTED POLYAMIC ACID OLIGOMER 失效
公开(公告)号：JPS60137932A
公开(公告)日：1985-07-22
申请号：JP24388983
申请日：1983-12-26
申请人： HITACHI LTD
发明人： KATAOKA FUMIO , SHIYOUJI FUSAJI , TAKEMOTO KAZUNARI , YOKONO ATARU
IPC分类号： C08F255/00 , C08F299/02 , C08G73/00 , C08G73/12
摘要： PURPOSE:The titled oligomer, obtained by using an easily synthesized 4-ethynylphthalic anhydride, and capable of giving inexpensive final polyimides having improved heat resistance. CONSTITUTION:An acetylene-substituted polyamic acid oligomer expressed by formula I (Ar is bifunctional organic group having an aromatic ring; Ar is a tetrafunctional organic group having an aromatic ring; Ar is benzene ring or naphthalene ring; R is H, lower alkyl, 3,3'-dialkyl-3-hydroxy-1-propynyl or phenyl; X is -O-, -S-, -CH2- of formula II, III or IV; n is 1-20). An end capping agent of structure having a group, containig a triple bond, and bonded to the benzene nucleus on one hand and an acid anhydride skeleton incorporated in another benzene nucleus or naphthalene nucleus on the other hand is used as the end capping agent.

20. 发明专利

JPS60110140A FORMING METHOD FOR WIRING STRUCTURE 失效
公开(公告)号：JPS60110140A
公开(公告)日：1985-06-15
申请号：JP21772883
申请日：1983-11-21
申请人： HITACHI LTD
发明人： MATSUYAMA HARUHIKO , SHIYOUJI REIJI , TAKEMOTO KAZUNARI
IPC分类号： H01L21/3205 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To make it possible to readily form accurate thick film ultrafine wirings of a thin film magnetic head by providing a lift-off layer through a dry etching resistant layer on a primary film. CONSTITUTION:After a polyimide film is formed as a primary film 2 on a silicon substrate 1, chromium is sputtered as a dry etching resistant layer 8, and a polyimide film is then formed as a lift-off layer 3. Then, after molybdenum is sputtered, a photoresist pattern is formed, and a dry etching resist pattern 4 of molybdenum is formed by plasma etching. Then, the layer 3 is plasma etched, and a lift-off pattern 5 is formed. Thereafter, a wiring material 6 is formed by sputtering, the pattern 5 is then etched and removed to form a wiring pattern 7, and a dry etching resistant layer 8 is then plasma etched.

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