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11. 发明申请

WO2011014172A1 ELECTROFORMING-FREE NANOSCALE SWITCHING DEVICE 审中-公开
标题翻译：无电极纳米开关器件
公开(公告)号：WO2011014172A1
公开(公告)日：2011-02-03
申请号：PCT/US2009/052255
申请日：2009-07-30
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , YANG, Jianhua , WANG, Shih-yuan , WILLIAMS, Stanley , BRATKOVSKI, Alexandre , RIBEIRO, Gilberto
发明人： YANG, Jianhua , WANG, Shih-yuan , WILLIAMS, Stanley , BRATKOVSKI, Alexandre , RIBEIRO, Gilberto
IPC分类号： H01L29/40
CPC分类号： H01L29/417 , B82Y10/00 , H01L27/101 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146
摘要： A nanoscale switching device is constructed such that an electroforming process is not needed to condition the device for normal switching operations. The switching device has an active region disposed between two electrodes. The active region has at least one switching layer formed of a switching material capable of transporting dopants under an electric field, and at least one conductive layer formed of a dopant source material containing dopants that can drift into the switching layer under an electric field. The switching layer has a thickness about 6 nm or less.
摘要翻译：构造纳米级开关器件，使得不需要电铸工艺来调节器件以进行正常的开关操作。开关装置具有设置在两个电极之间的有源区域。有源区具有由能够在电场下输送掺杂剂的开关材料形成的至少一个开关层，以及由掺杂剂源材料形成的至少一个导电层，所述掺杂剂源材料含有可在电场下漂移到开关层中的掺杂剂。开关层的厚度为6nm以下。

12. 发明申请

WO2010077221A1 DYNAMICALLY RECONFIGURABLE HOLOGRAMS 审中-公开
标题翻译：动态可重构的HOLOGRAMS
公开(公告)号：WO2010077221A1
公开(公告)日：2010-07-08
申请号：PCT/US2008/014085
申请日：2008-12-29
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , WANG, Shih-yuan , BRATKOVSKI, Alexandre M. , WILLIAMS, R. Stanley , LI, Jingjing , WU, Wei , KUEKES, Philip J.
发明人： WANG, Shih-yuan , BRATKOVSKI, Alexandre M. , WILLIAMS, R. Stanley , LI, Jingjing , WU, Wei , KUEKES, Philip J.
IPC分类号： G03H1/04
CPC分类号： G03H1/02 , G02B1/007 , G03H1/2249 , G03H1/2294 , G03H2001/0224 , G03H2210/30 , G03H2225/22 , G03H2225/32 , G03H2225/33
摘要： Various embodiments of the present invention relate to systems that can be used as holograms and can be electronically controlled and dynamically reconfigured to generate three-dimensional motion picture images. In one embodiment, a dynamically reconfigurable hologram (1200) comprises a phase-control layer (1202) including a two-dimensional array of phase-modulation pixels (1212). The hologram also comprises an intensity-control layer (1204) including a two-dimensional array of intensity-control pixels (1214). One or more three-dimensional motion pictures can be produced by electronically addressing the individual phase-modulation pixels and intensity-control pixels in order to phase and control the intensity of light emanating from pixels of the hologram.
摘要翻译：本发明的各种实施例涉及可以用作全息图并且可以被电子控制和动态重新配置以产生三维运动图像图像的系统。在一个实施例中，动态可重构全息图（1200）包括包括相位调制像素的二维阵列（1212）的相位控制层（1202）。全息图还包括包括强度控制像素（1214）的二维阵列的强度控制层（1204）。可以通过电子地寻址各个相位调制像素和强度控制像素来产生一个或多个三维运动图像，以便相位和控制从全息图像素发出的光的强度。

13. 发明申请

WO2009136906A1 NANOWIRE-BASED PHOTODIODE 审中-公开
标题翻译：基于纳米级的光刻胶
公开(公告)号：WO2009136906A1
公开(公告)日：2009-11-12
申请号：PCT/US2008/062683
申请日：2008-05-05
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , WANG, Shih-yuan , TAN, Michael R.
发明人： WANG, Shih-yuan , TAN, Michael R.
IPC分类号： H01L31/10 , H01L31/101
CPC分类号： H01L31/105 , B82Y20/00
摘要： A nanowire-based photodiode 100 and an interdigital p - i - n photodiode 200 use an i -type semiconductor nanowire 140, 240 in an i -region of the photodiode 100, 200. The nanowire-based photodiode 100, 200 includes a first sidewall 110, 212, 210 of a first semiconductor doped with a p -type dopant, a second sidewall 120, 222, 220 of the first semiconductor doped with an n -type dopant, and an intrinsic semiconductor nanowire 140, 240 that spans a trench 130, 230 between the first and second sidewalls. The trench is wider at a top than at a bottom adjacent to a substrate 150, 160, 250. The first semiconductor of one or both of the first sidewall and the second sidewall is single crystalline and together the first sidewall, the nanowire and the second sidewall form a p - i - n semiconductor junction of the photodiode.
摘要翻译：基于纳米线的光电二极管100和叉指式光电二极管200在光电二极管100,200的i区域中使用i型半导体纳米线140,240。纳米线基光电二极管100,200包括第一侧壁110,212，掺杂有p型掺杂剂的第一半导体的第二半导体210，掺杂有n型掺杂剂的第一半导体的第二侧壁120,222,220以及跨越沟槽130,230之间的本征半导体纳米线140,240 第一和第二侧壁。沟槽在顶部比在与衬底150,160,250相邻的底部更宽。第一侧壁和第二侧壁中的一个或两个的第一半导体是单晶的，并且第一侧壁，纳米线和第二侧壁侧壁形成光电二极管的引脚半导体结。

14. 发明申请

WO2010077220A1 DYNAMICALLY RECONFIGURABLE HOLOGRAMS WITH CHALCOGENIDE INTERMEDIATE LAYERS 审中-公开
标题翻译：具有氯化铝中间层的动态可重构的HOLOGRAMS
公开(公告)号：WO2010077220A1
公开(公告)日：2010-07-08
申请号：PCT/US2008/014084
申请日：2008-12-29
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , WANG, Shih-yuan , THYLEN, Lars Helge , BRATKOVSKI, Alexandre M. , LI, Jingjing , WU, Wei
发明人： WANG, Shih-yuan , THYLEN, Lars Helge , BRATKOVSKI, Alexandre M. , LI, Jingjing , WU, Wei
IPC分类号： G03H1/04
CPC分类号： G03H1/22 , B82Y20/00 , G02F1/1333 , G02F1/134336 , G02F1/19 , G02F2201/12 , G02F2201/44 , G02F2201/52 , G02F2202/30 , G02F2202/36 , G02F2203/12 , G02F2203/30 , G02F2203/50 , G03H1/02 , G03H1/2294 , G03H2001/0224 , G03H2225/22 , G03H2225/32 , G03H2225/33 , G03H2240/24
摘要： Various embodiments of the present invention relate to dynamically reconfigurable hologram comprising a phase-modulation layer and an intensity-control layer. The phase modulation layer comprises an electronically programmable erasable negative index material crossbar. The crossbar includes a first layer of approximately parallel nanowires (502) and a second layer of approximately parallel nanowires (504) that overlay the nanowires in the first layer. The nanowires in the first and second layers have substantially regularly spaced fingers. The crossbar also includes resonant elements (812) comprising a chalcogenide-based layer (1000) sandwiched between the nanowire in the first layer and the nanowire in the second layer.
摘要翻译：本发明的各种实施例涉及包括相位调制层和强度控制层的动态可重构全息图。相位调制层包括电子可编程可擦除负指数材料交叉开关。交叉开关包括大致平行的纳米线（502）的第一层和覆盖第一层中的纳米线的近似平行的纳米线（504）的第二层。第一层和第二层中的纳米线具有大致规则间隔的指状物。横杆还包括谐振元件（812），其包括夹在第一层中的纳米线和第二层中的纳米线之间的基于硫族化物的层（1000）。

15. 发明申请

WO2010068221A1 MEMRISTIVE DEVICE 审中-公开
标题翻译：测量装置
公开(公告)号：WO2010068221A1
公开(公告)日：2010-06-17
申请号：PCT/US2008/086667
申请日：2008-12-12
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , WU, Wei , STRACHAN, John Paul , WILLIAMS, R. Stanley , FIORENTINO, Marco , WANG, Shih-yuan , QUITORIANO, Nathaniel J. , CHO, Hans S. , BORGHETTI, Julien , MATHAI, Sagi Varghese
发明人： WU, Wei , STRACHAN, John Paul , WILLIAMS, R. Stanley , FIORENTINO, Marco , WANG, Shih-yuan , QUITORIANO, Nathaniel J. , CHO, Hans S. , BORGHETTI, Julien , MATHAI, Sagi Varghese
IPC分类号： H01L21/265 , G11C16/00 , G11C16/02
CPC分类号： H01L45/145 , H01L27/2472 , H01L45/08 , H01L45/1206 , H01L45/1226 , H01L45/14 , H01L45/146 , H01L45/147
摘要： A memristive routing device (200) includes a memristive matrix (240), mobile dopants (255) moving with the memristive matrix (240) in response to programming electrical fields and remaining stable within the memristive matrix (240) in the absence of the programming electrical fields; and at least three electrodes (210, 220, 230) surrounding the memristive matrix (240). A method for tuning electrical circuits with a memristive device (900) includes measuring a circuit characteristic (805) and applying a programming voltage to the memristive device (900) which causes motion of dopants within the memristive device (900) to alter the circuit characteristic (805). A method for increasing a switching speed of a memristive device (1300) includes drawing dopants from two geometrically separated locations into close proximity to form two conductive regions (1380, 1390) and then switching the memristive device (1300) to a conductive state by applying a programming voltage which rapidly merges the two conductive regions (1380, 1390) to form a conductive pathway between a source electrode (1310) and a drain electrode (1320).
摘要翻译：忆阻路由设备（200）包括忆阻矩阵（240），移动掺杂物（255）响应于编程电场而与忆阻矩阵（240）一起移动，并且在没有编程的情况下保持稳定在忆阻矩阵（240）内电场; 以及围绕所述忆阻矩阵（240）的至少三个电极（210,220,230）。一种利用忆阻器件（900）来调谐电路的方法包括测量电路特性（805）并将编程电压施加到忆阻器件（900），其使得忆阻器件（900）内的掺杂剂的运动改变电路特性（805）。提高忆阻装置（1300）的切换速度的方法包括将来自两个几何分离的位置的掺杂剂绘制成紧邻形成两个导电区域（1380,1390），然后通过应用将所述忆阻装置（1300）切换到导电状态编程电压，其迅速地合并两个导电区域（1380,1390）以在源电极（1310）和漏电极（1320）之间形成导电通路。

16. 发明申请

WO2007001367A2 WAVELENGTH-TUNABLE EXCITATION RADIATION AMPLIFYING STRUCTURE AND METHOD 审中-公开
标题翻译：波长激励辐射放大结构和方法
公开(公告)号：WO2007001367A2
公开(公告)日：2007-01-04
申请号：PCT/US2005/032801
申请日：2005-09-13
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , WANG, Shih-yuan , ISLAM, M. Saiful, , LI, Zhiyong
发明人： WANG, Shih-yuan , ISLAM, M. Saiful, , LI, Zhiyong
IPC分类号： A61B5/00 , G01N21/35 , G01N21/31
CPC分类号： G01N21/658 , G01J3/26
摘要： Wavelenght-tunable radiation amplifying structures (100, 200, 300) for Raman spectroscopy are disclosed that include resonant cavities (110, 210, 310) having Raman signal-enhancing structures (130, 230, 330) disposed therein. Also disclosed are systems (500, 600) that include the amplifying structures (100, 200, 300), and methods of performing spectroscopic analysis using the structures (100, 200, 300) and systems (500, 600).
摘要翻译：公开了用于拉曼光谱的波长可调辐射放大结构（100,200,300），其包括设置在其中的具有拉曼信号增强结构（130,230,330）的谐振腔（110,210,310）。还公开了包括放大结构（100,200,300）的系统（500,600）以及使用结构（100,200,300）和系统（500,600）进行光谱分析的方法。

17. 发明公开

EP2176695A1 OPTICAL INTERCONNECT 有权转让
标题翻译：光连接器
公开(公告)号：EP2176695A1
公开(公告)日：2010-04-21
申请号：EP08768551.7
申请日：2008-06-16
申请人： Hewlett-Packard Development Company, L.P.
发明人： WANG, Shih-yuan , SIGALAS, Mihail , WU, Wei
IPC分类号： G02B6/36
CPC分类号： H04B10/803
摘要： An optical interconnect has a plurality of optical data sources, a plurality of optical data receivers, a diffractive optical element configured to diffract an optical beam from at least one alignment optical source to at least one sensor, and an aligning element configured to align optical beams from the optical data sources to said optical data receivers, according to readings from the sensor.

18. 发明公开

EP2392034A1 PLASMONIC LIGHT EMITTING DIODE 有权转让
标题翻译：电浆发光二极管
公开(公告)号：EP2392034A1
公开(公告)日：2011-12-07
申请号：EP09839424.0
申请日：2009-01-30
申请人： Hewlett-Packard Development Company, L.P.
发明人： TAN, Michael R.T. , FATTAL, David A. , FIORENTINO, Marco , WANG, Shih-yuan
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , H01L33/0062 , H01L33/02 , H01L33/04 , H01L33/20 , H01L33/30 , H01L33/387 , H01L33/40 , H01L2933/0016
摘要： A light emitting diode (100 or 150) includes a diode structure containing a quantum well (120), an enhancement layer (142), and a barrier layer (144 or 148) between the enhancement layer (142) and the quantum well (120). The enhancement layer (142) supports plasmon oscillations at a frequency that couples to photons produced by combination of electrons and holes in the quantum well (120). The barrier layer serves to block diffusion between the enhancement layer (142) and the diode structure.

19. 发明公开

EP2347300A1 OPTICAL BEAM COUPLERS AND SPLITTERS 审中-公开
标题翻译：光束耦合器和分频器
公开(公告)号：EP2347300A1
公开(公告)日：2011-07-27
申请号：EP08877890.7
申请日：2008-10-31
申请人： Hewlett-Packard Development Company, L.P.
发明人： KUO, Huei, Pei , TAN, Michael Renne, Ty , WANG, Shih-yuan , WALMSLEY, Robert, G. , ROSENBERG, Paul, Kessler
IPC分类号： G02B27/10 , G02B6/27
CPC分类号： G02B6/2817 , G02B27/126 , G02B27/145
摘要： Beam couplers and splitters are disclosed herein. An embodiment of a beam coupler and splitter includes a first waveguide including a bevel and a bend, and a second waveguide including a bevel complementarily shaped to the first waveguide bevel. The first waveguide bevel is configured to totally internally reflect at least some light incident thereon. The second waveguide is coupled to the first waveguide such that i) the second waveguide bevel is adjacent to at least a portion of the first waveguide bevel, and ii) a predetermined coupling ratio is achieved.

20. 发明申请

WO2008045520A2 IMPRINT LITHOGRAPHY APPARATUS AND METHODS 审中-公开
公开(公告)号：WO2008045520A2
公开(公告)日：2008-04-17
申请号：PCT/US2007/021767
申请日：2007-10-10
申请人： HEWLETT-PACKAARD DEVELOPMENT COMPANY, L. P. , WANG, Shih-yuan , WU, Wei , YU, Zhaoning
发明人： WANG, Shih-yuan , WU, Wei , YU, Zhaoning
CPC分类号： G03F7/0002 , B29C43/021 , B29C2043/025 , B82Y10/00 , B82Y40/00
摘要： An imprint lithography apparatus including a service station (136).
摘要翻译：一种压印光刻设备，包括维修站（136）。

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