专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20150311253A1 MEMORY DEVICE 有权
标题翻译：内存设备
公开(公告)号：US20150311253A1
公开(公告)日：2015-10-29
申请号：US14602490
申请日：2015-01-22
申请人： Young-Seok CHOI , Jaehun SEO , Hyun-woo YANG , Jongchul PARK
发明人： Young-Seok CHOI , Jaehun SEO , Hyun-woo YANG , Jongchul PARK
IPC分类号： H01L27/22 , H01L43/08 , H01L43/02
CPC分类号： H01L27/228 , H01L43/08 , H01L43/12
摘要： Provided is a memory device, including a memory element on a substrate; a protection insulating pattern covering a side surface of the memory element and exposing a top surface of the memory element; an upper mold layer on the protection insulating pattern; and a bit line on and connected to the memory element, the bit line extending in a first direction, the protection insulating pattern including a first protection insulating pattern covering a lower side surface of the memory element; and a second protection insulating pattern covering an upper side surface of the memory element and including a different material from the first protection insulating pattern.
摘要翻译：提供了一种存储器件，其包括在衬底上的存储元件; 覆盖存储元件的侧表面并暴露存储元件的顶表面的保护绝缘图案; 保护绝缘图案上的上模层; 以及位于所述存储元件上的位线，所述位线沿第一方向延伸，所述保护绝缘图案包括覆盖所述存储元件的下侧表面的第一保护绝缘图案; 以及覆盖存储元件的上侧表面并且包括与第一保护绝缘图案不同的材料的第二保护绝缘图案。

12. 发明申请

US20180123029A1 DATA STORAGE DEVICES AND METHODS FOR MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20180123029A1
公开(公告)日：2018-05-03
申请号：US15606136
申请日：2017-05-26
申请人： Jongchul PARK , Sang-Kuk KIM
发明人： Jongchul PARK , Sang-Kuk KIM
IPC分类号： H01L43/12 , H01L43/08 , H01L43/02 , H01L27/22
CPC分类号： H01L43/12 , H01L27/222 , H01L43/02 , H01L43/08
摘要： A method of manufacturing a data storage device may include forming a magnetic tunnel junction layer on a substrate, irradiating a first ion beam on the magnetic tunnel junction layer to form magnetic tunnel junction patterns separated from each other, irradiating a second ion beam on the magnetic tunnel junction layer, and irradiating a third ion beam on the magnetic tunnel junction layer. The first ion beam may be irradiated at a first incident angle. The second ion beam may be irradiated at a second incident angle that may be smaller than the first incident angle. The third ion beam may be irradiated to form sidewall insulating patterns on sidewalls of the magnetic tunnel junction patterns based on re-depositing materials separated by the third ion beam on the sidewalls of the magnetic tunnel junction patterns.

13. 发明申请

US20150287907A1 MAGNETIC MEMORY DEVICES 有权
标题翻译：磁记忆装置
公开(公告)号：US20150287907A1
公开(公告)日：2015-10-08
申请号：US14567932
申请日：2014-12-11
申请人： Jongchul PARK , Byoungjae BAE , Shin-Jae KANG , Eunsun NOH , Kyung Rae BYUN
发明人： Jongchul PARK , Byoungjae BAE , Shin-Jae KANG , Eunsun NOH , Kyung Rae BYUN
IPC分类号： H01L43/08 , H01L43/02
CPC分类号： H01L43/08 , G11C11/161 , H01L27/228 , H01L43/02 , H01L43/12
摘要： Magnetic memory devices include a plurality of first magnetic patterns on a substrate so as to be spaced apart from each other, a first insulating pattern between the first magnetic patterns to define the first magnetic patterns, and a tunnel barrier layer covering the first magnetic patterns and the first insulating pattern. The first insulating pattern includes a first magnetic element, and the first magnetic element is the same as a second magnetic element constituting the first magnetic patterns.
摘要翻译：磁存储器件包括在基板上彼此间隔开的多个第一磁性图案，第一磁性图案之间的第一绝缘图案，以限定第一磁性图案，以及覆盖第一磁性图案的隧道势垒层和第一绝缘图案。第一绝缘图案包括第一磁性元件，第一磁性元件与构成第一磁性图案的第二磁性元件相同。

14. 发明申请

US20120132970A1 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120132970A1
公开(公告)日：2012-05-31
申请号：US13306112
申请日：2011-11-29
申请人： Jongchul PARK , Sangsup Jeong , Byung-Jin Kang
发明人： Jongchul PARK , Sangsup Jeong , Byung-Jin Kang
IPC分类号： H01L23/48 , H01L27/06 , H01L29/78
CPC分类号： H01L27/10897 , H01L21/76804 , H01L21/76831 , H01L27/10844 , H01L27/10855 , H01L27/10888
摘要： Provided are semiconductor devices and methods of manufacturing the same. The semiconductor device may include a substrate provided with a transistor, an insulating layer disposed on the substrate, the insulating layer including a contact hole exposing a portion of the transistor, a spacer disposed on an inner sidewall of the contact hole, and a contact plug disposed in the contact hole. Here, a space defined by the spacer may increase in width from a bottom side thereof to a top side thereof.
摘要翻译：提供半导体器件及其制造方法。半导体器件可以包括设置有晶体管的衬底，设置在衬底上的绝缘层，绝缘层包括暴露晶体管的一部分的接触孔，设置在接触孔的内侧壁上的间隔件和接触插塞设置在接触孔中。这里，由间隔件限定的空间的宽度可以从其底侧增加到其顶侧。

15. 发明申请

US20100196247A1 METHOD FOR MANUFACTURING CARBON NANOTUBES 有权
标题翻译：制备碳纳米管的方法
公开(公告)号：US20100196247A1
公开(公告)日：2010-08-05
申请号：US12534262
申请日：2009-08-03
申请人： Kazuchika OHTA , Ick-Soo KIM , Byoung-Suhk KIM , Jongchul PARK
发明人： Kazuchika OHTA , Ick-Soo KIM , Byoung-Suhk KIM , Jongchul PARK
IPC分类号： D01F9/12
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/162 , Y10S977/842 , Y10S977/844
摘要： A method for manufacturing carbon nanotubes of the present invention includes the steps of: preparing at least one metal selected from a group consisting of iron, cobalt and nickel and an organic compound: and forming carbon nanotubes by using the organic compound as a carbon source, wherein the metal and the organic compound are put into a heating vessel having a substance capable of converting electromagnetic energy into heat, and the organic compound is brought into contact with the metal in a state where the inside of the heating vessel is heated at a temperature of 600° C. to 900° C. by applying the electromagnetic energy to the heating vessel so as to form the carbon nanotubes.
摘要翻译：本发明的制造碳纳米管的方法包括以下步骤：制备选自铁，钴和镍中的至少一种金属和有机化合物，并通过使用有机化合物作为碳源形成碳纳米管，其中将金属和有机化合物放入具有能够将电磁能转换成热的物质的加热容器中，并且在加热容器的内部被加热的状态下使有机化合物与金属接触通过将电磁能施加到加热容器以形成碳纳米管，其温度为600℃至900℃。

16. 发明申请

US20170179381A1 METHOD OF FORMING A PATTERN USING ION BEAMS OF BILATERAL SYMMETRY, A METHOD OF FORMING A MAGNETIC MEMORY DEVICE USING THE SAME, AND AN ION BEAM APPARATUS GENERATING ION BEAMS OF BILATERAL SYMMETRY 有权
公开(公告)号：US20170179381A1
公开(公告)日：2017-06-22
申请号：US15449897
申请日：2017-03-03
申请人： Jongchul PARK , Hyungjoon KWON
发明人： Jongchul PARK , Hyungjoon KWON
IPC分类号： H01L43/12 , H01J37/32
CPC分类号： H01L43/12 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J2237/083 , H01J2237/3174 , H01J2237/334
摘要： A pattern-forming method includes providing a first ion beam at a first incidence angle and a second ion beam at a second incidence angle to a surface of an etch target layer formed on a substrate. Patterns are formed by patterning the etch target layer using the first and second ion beams. The first ion beam and the second ion beam are substantially symmetrical to each other with respect to a normal line that is perpendicular to a top surface of the substrate. Each of the first and second incidence angles is greater than 0 degrees and smaller than an angle obtained by subtracting a predetermined angle from 90 degrees.

17. 发明申请

US20100196248A1 METHOD FOR MANUFACTURING CARBON NANOTUBES 有权
标题翻译：制备碳纳米管的方法
公开(公告)号：US20100196248A1
公开(公告)日：2010-08-05
申请号：US12534268
申请日：2009-08-03
申请人： Kazuchika OHTA , Ick-Soo KIM , Byoung-Suhk KIM , Jongchul PARK
发明人： Kazuchika OHTA , Ick-Soo KIM , Byoung-Suhk KIM , Jongchul PARK
IPC分类号： D01F9/12
CPC分类号： B82Y40/00 , B01J31/04 , B01J2531/847 , B82Y30/00 , C01B32/162 , Y10S977/842 , Y10S977/844
摘要： A method for manufacturing carbon nanotubes of the present invention includes the steps of: preparing a metal complex which contains at least one metal selected from a group consisting of iron, cobalt and nickel and an organic compound: and forming carbon nanotubes which contain metal therein by using the organic compound as a carbon source, wherein the carbon nanotubes are formed by putting the metal complex into a heating vessel which has a substance capable of converting electromagnetic energy into heat, and by heating the metal complex using heat which is generated by the heating vessel when electromagnetic energy is applied to the heating vessel. As the metal complex used in a method for manufacturing carbon nanotubes of the present invention, nickel stearate or nickel benzoate can be named, for example. According to the method for manufacturing carbon nanotubes of the present invention, it is possible to manufacture carbon nanotubes using an inexpensive heating device within a short time.
摘要翻译：本发明的制造碳纳米管的方法包括以下步骤：制备含有选自铁，钴和镍中的至少一种金属和有机化合物的金属络合物，并通过以下方法形成含有金属的碳纳米管：使用有机化合物作为碳源，其中通过将金属络合物放入具有能够将电磁能转化成热的物质的加热容器中，并且通过加热产生的加热金属络合物来形成碳纳米管当电磁能被施加到加热容器时的容器。作为本发明的碳纳米管制造方法中使用的金属络合物，例如可以列举硬脂酸镍或苯甲酸镍。根据本发明的碳纳米管的制造方法，可以在短时间内使用便宜的加热装置制造碳纳米管。

18. 发明申请

US20140117477A1 MAGNETIC MEMORY DEVICES AND METHODS OF FABRICATING THE SAME 审中-公开
标题翻译：磁记忆体装置及其制造方法
公开(公告)号：US20140117477A1
公开(公告)日：2014-05-01
申请号：US14067108
申请日：2013-10-30
申请人： Jongchul PARK , Sechung OH , Byoungjae BAE , Daeeun JEONG
发明人： Jongchul PARK , Sechung OH , Byoungjae BAE , Daeeun JEONG
IPC分类号： H01L43/02
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , H01L27/228
摘要： Magnetic memory devices, and methods of fabricating the same, include lower magnetic patterns arranged along first and second directions orthogonal to each other on a substrate, an upper magnetic layer covering at least two of the lower magnetic patterns arranged along the first direction and at least two of the lower magnetic patterns arranged along the second direction, and a tunnel barrier layer the lower magnetic patterns and the upper magnetic layer.
摘要翻译：磁存储器件及其制造方法包括沿着衬底上彼此正交的第一和第二方向布置的较低磁性图案，覆盖沿着第一方向布置的至少两个下部磁性图案的上部磁性层，并且至少沿着第二方向布置的两个下磁性图案，以及隧道势垒层，下部磁图案和上部磁性层。

19. 发明申请

US20100296996A1 METHOD OF MANUFACTURING CARBON NANOTUBES 有权
标题翻译：制备碳纳米管的方法
公开(公告)号：US20100296996A1
公开(公告)日：2010-11-25
申请号：US12534252
申请日：2009-08-03
申请人： Kazuchika OHTA , Ick-Soo KIM , Byoung-Suhk KIM , Jongchul PARK
发明人： Kazuchika OHTA , Ick-Soo KIM , Byoung-Suhk KIM , Jongchul PARK
IPC分类号： D01F9/12
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/15
摘要： A method for manufacturing carbon nanotubes includes the steps of: preparing metal-containing-nanofibers which include nanofibers made of organic polymer and metal which possesses a catalytic function in forming carbon nanotubes; and forming carbon nanotubes which contain metal therein by using the nanofibers as a carbon source, wherein the carbon nanotubes are formed by putting the metal-containing-nanofibers into a heating vessel which has a substance capable of converting electromagnetic energy into heat, and by heating the metal-containing-nanofibers using heat which is generated by the heating vessel when electromagnetic energy is applied to the heating vessel.
摘要翻译：制造碳纳米管的方法包括以下步骤：制备含有纳米纤维的纳米纤维，所述纳米纤维包括由有机聚合物制成的纳米纤维和在形成碳纳米管时具有催化功能的金属; 并且通过使用纳米纤维作为碳源形成含有金属的碳纳米管，其中，通过将含金属的纳米纤维放入具有能够将电磁能转化为热的物质的加热容器中，并且通过加热形成碳纳米管含有电子的纳米纤维，当电磁能被施加到加热容器时，使用由加热容器产生的热量。

20. 发明申请

US20180158643A1 ION BEAM APPARATUS INCLUDING SLIT STRUCTURE FOR EXTRACTING ION BEAM, ETCHING METHOD USING THE SAME, AND METHOD FOR MANUFACTURING MAGNETIC MEMORY DEVICE USING THE ION BEAM APPARATUS 审中-公开
公开(公告)号：US20180158643A1
公开(公告)日：2018-06-07
申请号：US15649327
申请日：2017-07-13
申请人： Jongchul PARK
发明人： Jongchul PARK
IPC分类号： H01J37/147 , H01J37/305 , H01J37/08
CPC分类号： H01J37/1471 , H01J37/04 , H01J37/08 , H01J37/1472 , H01J37/15 , H01J37/3053 , H01J37/32357 , H01J37/32422 , H01J37/32513 , H01J2237/083
摘要： An ion beam apparatus includes a source part generating plasma therein, a process part in which a process using an ion beam is performed, and a slit structure provided between the source part and the process part and extracting the ion beam from the plasma. The slit structure includes at least one electrode structure. The electrode structure has a slit penetrating the electrode structure and extending in a first direction. The ion beam is irradiated onto a substrate at an incident angle through the slit. The incident angle of the ion beam is adjusted by rotating the electrode structure on a rotation axis parallel to the first direction.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式