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11. 发明申请

US20060001072A1 Methods of forming a gated device 有权
标题翻译：形成门控装置的方法
公开(公告)号：US20060001072A1
公开(公告)日：2006-01-05
申请号：US11171873
申请日：2005-06-30
申请人： Cem Basceri , H. Manning , Gurtej Sandhu , Kunal Parekh
发明人： Cem Basceri , H. Manning , Gurtej Sandhu , Kunal Parekh
IPC分类号： H01L21/8238 , H01L27/108 , H01L29/792
CPC分类号： H01L29/4983 , H01L21/28194 , H01L29/512 , H01L29/517
摘要： This invention includes gated field effect devices, and methods of forming gated field effect devices. In one implementation, a gated field effect device includes a pair of source/drain regions having a channel region therebetween. A gate is received proximate the channel region between the source/drain regions. The gate has a gate width between the source/drain regions. A gate dielectric is received intermediate the channel region and the gate. The gate dielectric has at least two different regions along the width of the gate. The different regions are characterized by different materials which are effective to define the two different regions to have different dielectric constants k. Other aspects and implementations are contemplated.
摘要翻译：本发明包括门控场效应器件，以及形成门控场效应器件的方法。在一种实施方案中，门控场效应器件包括在其间具有沟道区的一对源/漏区。在源极/漏极区域之间的沟道区域附近接收栅极。栅极在源极/漏极区之间具有栅极宽度。栅极电介质被接收在沟道区域和栅极之间。栅极电介质沿着栅极的宽度具有至少两个不同的区域。不同的区域由不同的材料表征，其有效地限定两个不同的区域以具有不同的介电常数k。考虑了其他方面和实现。

12. 发明申请

US20050032314A1 Dopant barrier for doped glass in memory devices 有权
标题翻译：存储器件中掺杂玻璃的掺杂阻挡层
公开(公告)号：US20050032314A1
公开(公告)日：2005-02-10
申请号：US10931591
申请日：2004-08-31
申请人： Kunal Parekh , Gurtej Sandhu
发明人： Kunal Parekh , Gurtej Sandhu
IPC分类号： H01L21/28 , H01L21/30 , H01L21/60 , H01L21/768 , H01L21/8242
CPC分类号： H01L21/76897 , H01L21/28247 , H01L21/3003 , H01L21/76832
摘要： A semiconductor device has a diffusion barrier formed between a doped glass layer and surface structures formed on a substrate. The diffusion barrier includes alumina and optionally a nitride, and has a layer thickness satisfying the high aspect ratio of the gaps between the surface structures, while adequately preventing dopants in doped glass layer from diffusing out of the doped glass layer to the surface structures and the substrate. Further, heavy water can be used during the formation of the alumina so that deuterium may be accomplished near the interface of surface structures and the substrate to enhance the performance of the device.
摘要翻译：半导体器件具有在掺杂的玻璃层和形成在衬底上的表面结构之间形成的扩散阻挡层。扩散阻挡层包括氧化铝和任选的氮化物，并且具有满足表面结构之间的间隙的高纵横比的层厚度，同时充分防止掺杂的玻璃层中的掺杂剂从掺杂的玻璃层扩散到表面结构，并且基质。此外，在形成氧化铝期间可以使用重水，使得可以在表面结构和基底的界面附近实现氘，以增强器件的性能。

13. 发明申请

US20060038244A1 Gated field effect devices 失效
标题翻译：门控场效应器件
公开(公告)号：US20060038244A1
公开(公告)日：2006-02-23
申请号：US11253461
申请日：2005-10-19
申请人： Cem Basceri , H. Manning , Gurtej Sandhu , Kunal Parekh
发明人： Cem Basceri , H. Manning , Gurtej Sandhu , Kunal Parekh
IPC分类号： H01L29/94
CPC分类号： H01L29/4983 , H01L21/28194 , H01L29/512 , H01L29/517
摘要： This invention includes gated field effect devices, and methods of forming gated field effect devices. In one implementation, a gated field effect device includes a pair of source/drain regions having a channel region therebetween. A gate is received proximate the channel region between the source/drain regions. The gate has a gate width between the source/drain regions. A gate dielectric is received intermediate the channel region and the gate. The gate dielectric has at least two different regions along the width of the gate. The different regions are characterized by different materials which are effective to define the two different regions to have different dielectric constants k. Other aspects and implementations are contemplated.
摘要翻译：本发明包括门控场效应器件，以及形成门控场效应器件的方法。在一种实施方案中，门控场效应器件包括在其间具有沟道区的一对源/漏区。在源极/漏极区域之间的沟道区域附近接收栅极。栅极在源极/漏极区之间具有栅极宽度。栅极电介质被接收在沟道区域和栅极之间。栅极电介质沿着栅极的宽度具有至少两个不同的区域。不同的区域由不同的材料表征，其有效地限定两个不同的区域以具有不同的介电常数k。考虑了其他方面和实现。

14. 发明申请

US20060263987A1 Methods of forming fusible devices 审中-公开
标题翻译：形成易熔装置的方法
公开(公告)号：US20060263987A1
公开(公告)日：2006-11-23
申请号：US11496251
申请日：2006-07-31
申请人： Mark Fischer , Zhiping Yin , Thomas Glass , Kunal Parekh , Gurtej Sandhu
发明人： Mark Fischer , Zhiping Yin , Thomas Glass , Kunal Parekh , Gurtej Sandhu
IPC分类号： H01L21/336
CPC分类号： H01L23/5256 , H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a laser fuse. The laser fuse comprises an element comprising a heat conductive material. The fuse also includes an absorption element comprising a material with an adjustable capacity for heat or light absorption that overlays the heat conductive element. The fuse also includes an outer insulating element that overlays and encloses the heat conductive element and the absorption element.
摘要翻译：本发明涉及一种激光熔丝。激光熔丝包括包含导热材料的元件。保险丝还包括吸收元件，该吸收元件包括具有与热传导元件重叠的热或光吸收的可调容量的材料。保险丝还包括覆盖并包围导热元件和吸收元件的外绝缘元件。

15. 发明授权

US10515801B2 Pitch multiplication using self-assembling materials 有权
公开(公告)号：US10515801B2
公开(公告)日：2019-12-24
申请号：US12908206
申请日：2010-10-20
申请人： Gurtej Sandhu
发明人： Gurtej Sandhu
IPC分类号： H01L21/033 , H01L21/308 , H01L21/311 , H01L21/3213
摘要： Self-assembling materials, such as block copolymers, are used as mandrels for pitch multiplication. The copolymers are deposited over a substrate and directed to self-assemble into a desired pattern. One of the blocks forming the block copolymers is selectively removed. The remaining blocks are used as mandrels for pitch multiplication. Spacer material is blanket deposited over the blocks. The spacer material is subjected to a spacer etch to form spacers on sidewalls of the mandrels. The mandrels are selectively removed to leave free-standing spacers. The spacers may be used as pitch-multiplied mask features to define a pattern in an underlying substrate.

16. 发明授权

US09196753B2 Select devices including a semiconductive stack having a semiconductive material 有权
标题翻译：选择包括具有半导体材料的半导体叠层的器件
公开(公告)号：US09196753B2
公开(公告)日：2015-11-24
申请号：US13089648
申请日：2011-04-19
申请人： D. V. Nirmal Ramaswamy , Gurtej Sandhu
发明人： D. V. Nirmal Ramaswamy , Gurtej Sandhu
IPC分类号： H01L27/108 , H01L29/872 , H01L27/28 , H01L45/00 , H01L27/102 , H01L29/885 , H01L27/22 , H01L27/24 , G11C11/56 , G11C13/00
CPC分类号： H01L29/872 , G11C11/5678 , G11C13/0004 , G11C2213/71 , H01L27/1021 , H01L27/224 , H01L27/2409 , H01L27/285 , H01L29/885 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/141 , H01L45/146 , H01L45/147 , H01L45/16
摘要： Methods, devices, and systems are provided for a select device that can include a semiconductive stack of at least one semiconductive material formed on a first electrode, where the semiconductive stack can have a thickness of about 700 angstroms (Å) or less. Each of the at least one semiconductive material can have an associated band gap of about 4 electron volts (eV) or less and a second electrode can be formed on the semiconductive stack.
摘要翻译：为选择装置提供方法，装置和系统，所述选择装置可以包括形成在第一电极上的至少一个半导体材料的半导体叠层，其中半导体叠层可以具有约700埃（或更小）的厚度。所述至少一个半导体材料中的每一个可以具有约4电子伏（eV）或更小的相关带隙，并且可以在半导体叠层上形成第二电极。

17. 发明授权

US08946907B2 Self-aligned nano-structures 有权
标题翻译：自对准纳米结构
公开(公告)号：US08946907B2
公开(公告)日：2015-02-03
申请号：US13526225
申请日：2012-06-18
申请人： Gurtej Sandhu
发明人： Gurtej Sandhu
IPC分类号： H01L23/52 , H01L21/311 , H01L21/033
CPC分类号： H01L23/5226 , H01L21/0337 , H01L21/31144 , H01L2924/0002 , H01L2924/00
摘要： A method for creating structures in a semiconductor assembly is provided. The method includes etching apertures into a dielectric layer and applying a polymer layer over the dielectric layer. The polymer layer is applied uniformly and fills the apertures at different rates depending on the geometry of the apertures, or on the presence or absence of growth accelerating material. The polymer creates spacers for the etching of additional structure in between the spacers. The method is capable of achieving structures smaller than current lithography techniques.
摘要翻译：提供了一种用于在半导体组件中产生结构的方法。该方法包括将孔蚀刻到电介质层中，并在该介电层上施加聚合物层。均匀地施加聚合物层，并根据孔的几何形状，或者存在或不存在生长促进材料，以不同的速率填充孔。该聚合物产生用于蚀刻间隔物之间的附加结构的间隔物。该方法能够实现比当前光刻技术更小的结构。

18. 发明授权

US08796661B2 Nonvolatile memory cells and methods of forming nonvolatile memory cell 有权
标题翻译：非易失性存储单元和形成非易失性存储单元的方法
公开(公告)号：US08796661B2
公开(公告)日：2014-08-05
申请号：US12917348
申请日：2010-11-01
申请人： Nirmal Ramaswamy , Gurtej Sandhu
发明人： Nirmal Ramaswamy , Gurtej Sandhu
IPC分类号： H01L47/00 , H01L21/06 , H01L21/20
CPC分类号： H01L45/085 , H01L45/04 , H01L45/08 , H01L45/1233 , H01L45/1266 , H01L45/1273 , H01L45/14 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/1683
摘要： A method of forming a nonvolatile memory cell includes forming a first electrode having a first current conductive material and a circumferentially self-aligned second current conductive material projecting elevationally outward from the first current conductive material. The second current conductive material is different in composition from the first current conductive material. A programmable region is formed over the first current conductive material and over the projecting second current conductive material of the first electrode. A second electrode is formed over the programmable region. In one embodiment, the programmable region is ion conductive material, and at least one of the first and second electrodes has an electrochemically active surface directly against the ion conductive material. Other method and structural aspects are disclosed.
摘要翻译：形成非易失性存储单元的方法包括形成具有第一电流导电材料的第一电极和从第一电流导电材料向外突出的周向自对准的第二导电材料。第二电流导电材料的组成不同于第一电流导电材料。可编程区域形成在第一电流导电材料之上并且在第一电极的突出的第二电流导电材料之上。在可编程区域上形成第二电极。在一个实施例中，可编程区域是离子传导材料，并且第一和第二电极中的至少一个电极具有直接抵靠离子导电材料的电化学活性表面。公开了其它方法和结构方面。

19. 发明授权

US08637113B2 Methods of forming a non-volatile resistive oxide memory array 有权
标题翻译：形成非易失性电阻氧化物存储器阵列的方法
公开(公告)号：US08637113B2
公开(公告)日：2014-01-28
申请号：US13354163
申请日：2012-01-19
申请人： Gurtej Sandhu , John Smythe , Bhaskar Srinivasan
发明人： Gurtej Sandhu , John Smythe , Bhaskar Srinivasan
IPC分类号： C23C18/00 , C23C20/00 , C23C28/00 , C23C30/00 , H01C17/06
CPC分类号： H01L27/101 , H01L21/0271 , Y10S438/947
摘要： A method of forming a non-volatile resistive oxide memory array includes forming a plurality of one of conductive word lines or conductive bit lines over a substrate. Metal oxide-comprising material is formed over the plurality of said one of the word lines or bit lines. A series of elongated trenches is provided over the plurality of said one of the word lines or bit lines. A plurality of self-assembled block copolymer lines is formed within individual of the trenches in registered alignment with and between the trench sidewalls. A plurality of the other of conductive word lines or conductive bit lines is provided from said plurality of self-assembled block copolymer lines to form individually programmable junctions comprising said metal oxide-comprising material where the word lines and bit lines cross one another.
摘要翻译：形成非易失性电阻氧化物存储器阵列的方法包括在衬底上形成多个导电字线或导电位线。含金属氧化物的材料形成在多条所述一条字线或位线中。在多个所述一条字线或位线之间提供一系列细长的沟槽。多个自组装嵌段共聚物线形成在沟槽中的各个内，与沟槽侧壁之间对准并且在沟槽侧壁之间形成。从所述多个自组装嵌段共聚物线路提供多个导电字线或导电位线，以形成包含所述金属氧化物的材料的单独可编程的结，其中字线和位线彼此交叉。

20. 发明申请

US20130188903A1 PHOTONIC DEVICE AND METHODS OF FORMATION 有权
标题翻译：光电器件及其形成方法
公开(公告)号：US20130188903A1
公开(公告)日：2013-07-25
申请号：US13354767
申请日：2012-01-20
申请人： Gurtej Sandhu , Roy Meade
发明人： Gurtej Sandhu , Roy Meade
IPC分类号： G02B6/12 , H01L21/02
CPC分类号： G02B6/12 , B82Y20/00 , G02B6/122 , G02B6/1223 , G02B6/1225 , G02B6/13 , G02B2006/121 , H01L2933/0083
摘要： A photonic device and methods of formation that provide an area providing reduced optical coupling between a substrate and an inner core of the photonic device are described. The area is formed using holes in the inner core and an outer cladding. The holes may be filled with materials which provide a photonic crystal. Thus, the photonic device may function as a waveguide and as a photonic crystal.
摘要翻译：描述了提供在光子器件的衬底和内核之间提供减小的光学耦合的区域的光子器件和形成方法。该区域由内芯和外包层中的孔形成。孔可以填充提供光子晶体的材料。因此，光子器件可以用作波导和光子晶体。

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