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    • 12. 发明授权
    • Illumination optics for microlithography
    • 用于微光刻的照明光学器件
    • US08937708B2
    • 2015-01-20
    • US12789772
    • 2010-05-28
    • Martin EndresRalf StuetzleJens Ossmann
    • Martin EndresRalf StuetzleJens Ossmann
    • G03B27/54G03B27/72G03F7/20
    • G03F7/702G03F7/70075G03F7/70083G03F7/70191
    • An illumination optics for microlithography includes an optical assembly for guiding illumination light to an object field to be illuminated in an object plane. The illumination optics can divide an illumination light radiation bundle into a plurality of radiation sub-bundles which are assigned to different illumination angles of the object field illumination. The illumination optics is configured so that at least some of the radiation sub-bundles are superimposed in a superposition plane which is spaced from the object plane and which is not imaged into the object plane in which superposition takes place. This superposition is such that edges of the superimposed radiation sub-bundles coincide at least partially. In some embodiments, a field intensity setting device includes a plurality of adjacent individual diaphragms which at least attenuate illumination light when exposed thereon. These individual diaphragms are insertable into an illumination light radiation bundle in a direction parallel to an object displacement direction. All individual diaphragms of the field intensity setting device are insertable into the illumination light radiation bundle from one and the same side.
    • 用于微光刻的照明光学器件包括用于将照明光引导到在物平面中被照明的物场的光学组件。 照明光学器件可以将照明光辐射束划分成被分配给物场照明的不同照明角度的多个辐射子束。 照明光学器件被配置为使得至少一些辐射子束被叠加在与物平面间隔开并且不被成像到发生叠加的物平面中的叠加平面中。 这种叠加使得叠加的辐射子束的边缘至少部分地重合。 在一些实施例中,场强度设置装置包括多个相邻的单独膜片,其在暴露于其上时至少衰减照明光。 这些单独的隔膜可以在与物体位移方向平行的方向上插入到照明光辐射束中。 场强设定装置的各个隔膜均可从同一侧插入照明光辐射束。
    • 19. 发明授权
    • EUV illumination system
    • EUV照明系统
    • US07586113B2
    • 2009-09-08
    • US11755334
    • 2007-05-30
    • Martin EndresJens Ossmann
    • Martin EndresJens Ossmann
    • A61N5/00G21G5/00
    • G02B17/0892G02B17/0804G02B17/082G02B17/0836G03F7/702
    • An illumination system is used to illuminate a specified illumination field of an object surface with EUV radiation. The illumination system has an EUV source and a collector to concentrate the EUV radiation in the direction of an optical axis. A first optical element is provided to generate secondary light sources, and a second optical element is provided at the location of these secondary light sources, the second optical element being part of an optical device which includes further optical elements, and which images the first optical element into an image plane into the illumination field. Between the collector and the illumination field, a maximum of five reflecting optical elements are arranged. These optical elements reflect the main beam either grazingly or steeply. The optical axis, projected onto an illumination main plane, is deflected by more than 30° between a source axis portion and a field axis portion. In a first variant of the illumination system, at least an axis portion between at least two of the reflecting optical elements is inclined relative to the illumination main plane. In a second variant of the illumination system, the optical device, in addition to the second optical element includes precisely three further optical elements, i.e. a third optical element, a fourth optical element and a fifth optical element. In this second variant, the optical axis meets the third, fourth and fifth optical elements at an angle of incidence which is greater than 70°. This construction variants make possible either an increase of the EUV throughput of the illumination system for a given size, or a reduction of the size of the illumination system and thus of the associated projection exposure system for a given EUV throughput.
    • 照明系统用于用EUV辐射照射物体表面的指定照明场。 照明系统具有EUV源和收集器以将EUV辐射集中在光轴的方向上。 提供第一光学元件以产生二次光源,并且在这些次级光源的位置处提供第二光学元件,第二光学元件是包括另外的光学元件的光学器件的一部分,并且其将第一光学元件 元素进入图像平面进入照明场。 在收集器和照明场之间,最多设置五个反射光学元件。 这些光学元件既可以粗略地或者陡峭地反射主光束。 投射到照明主平面上的光轴在源轴部分和场轴部分之间偏转大于30°。 在照明系统的第一变型中,至少两个反射光学元件之间的至少一个轴部分相对于照明主平面倾斜。 在照明系统的第二变型中,除了第二光学元件之外,光学器件精确地包括三个另外的光学元件,即第三光学元件,第四光学元件和第五光学元件。 在该第二变型中,光轴以大于70°的入射角与第三,第四和第五光学元件相遇。 这种构造变型使给定尺寸的照明系统的EUV吞吐量增加,或者对于给定的EUV吞吐量,照明系统的大小以及相关联的投影曝光系统的减小成为可能。
    • 20. 发明申请
    • ILLUMINATION SYSTEM FOR EUV LITHOGRAPHY
    • EUV光刻照明系统
    • US20090041182A1
    • 2009-02-12
    • US12235277
    • 2008-09-22
    • Martin EndresJens Ossmann
    • Martin EndresJens Ossmann
    • G21K5/00
    • G02B26/0833G02B5/09G02B17/06G03F7/70075G03F7/70116
    • The disclosure relates to an illumination system for EUV lithography, as well as related elements, systems and methods. In some embodiments, an illumination system includes a first optical element and a second optical element. The first optical element can include a plurality of first facet elements configured so that, when impinged by respective partial beams of radiation, the plurality of first facet elements produce secondary light sources. The second optical element can include a second optical element including a plurality of second facet elements. Each of the plurality of second facet elements can be assigned to at least one of the plurality of first facet elements. The plurality of second facet elements can be configured to be impinged by the radiation via the first optical element.
    • 本公开涉及用于EUV光刻的照明系统以及相关元件,系统和方法。 在一些实施例中,照明系统包括第一光学元件和第二光学元件。 第一光学元件可以包括多个第一小面元件,其被配置为使得当被相应的部分辐射束撞击时,多个第一小面元件产生次级光源。 第二光学元件可以包括包括多个第二小面元件的第二光学元件。 多个第二小面元件中的每一个可以被分配给多个第一小面元件中的至少一个。 多个第二小面元件可被配置为经由第一光学元件被辐射照射。