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11. 发明授权

US08564014B2 Ultraviolet light emitting AlGaN composition and ultraviolet light emitting device containing same 有权
标题翻译：紫外发光AlGaN组合物和含有它的紫外线发射装置
公开(公告)号：US08564014B2
公开(公告)日：2013-10-22
申请号：US12834409
申请日：2010-07-12
申请人： Anand Venktesh Sampath , Charles J. Collins , Gregory Alan Garrett , H. Paul Shen , Michael Wraback
发明人： Anand Venktesh Sampath , Charles J. Collins , Gregory Alan Garrett , H. Paul Shen , Michael Wraback
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02631 , H01S5/10 , H01S5/3209 , H01S5/34333
摘要： An AlGaN composition is provided comprising a group III-Nitride active region layer, for use in an active region of a UV light emitting device, wherein light-generation occurs through radiative recombination of carriers in nanometer scale size, compositionally inhomogeneous regions having band-gap energy less than the surrounding material. Further, a semiconductor UV light emitting device having an active region layer comprised of the AlGaN composition above is provided, as well as a method of producing the AlGaN composition and semiconductor UV light emitting device, involving molecular beam epitaxy.
摘要翻译：提供了一种AlGaN组合物，其包括III族氮化物有源区，用于UV发光器件的有源区，其中通过纳米级尺寸的载流子的辐射复合发生光产生，具有带隙的组成不均匀区能量小于周围材料。此外，提供了具有由上述AlGaN组成构成的有源区域层的半导体UV发光元件，以及制造包含分子束外延的AlGaN组合物和半导体UV发光元件的方法。

12. 发明授权

US08269223B2 Polarization enhanced avalanche photodetector and method thereof 有权
标题翻译：极化增强雪崩光电探测器及其方法
公开(公告)号：US08269223B2
公开(公告)日：2012-09-18
申请号：US13116667
申请日：2011-05-26
申请人： Michael Wraback , Paul Shen , Anand V Sampath
发明人： Michael Wraback , Paul Shen , Anand V Sampath
IPC分类号： H01L29/15
CPC分类号： H01L31/1075 , H01L31/03048 , H01L31/0312 , Y02E10/544
摘要： An avalanche photodetector comprising a multiplication layer formed of a first material having a first polarization; the multiplication layer having a first electric field upon application of a bias voltage; an absorption layer formed of a second material having a second polarization forming an interface with the multiplication layer; the absorption layer having a second electric field upon application of the bias voltage, the second electric field being less than the first electric field or substantially zero, carriers created by light absorbed in the absorption layer being multiplied in the multiplication layer due to the first electric field; the absorption layer having a second polarization which is greater or less than the first polarization to thereby create an interface charge; the interface charge being positive when the first material predominately multiplies holes, the interface charge being negative when the first material predominately multiplies electrons, the change in electric field at the interface occurring abruptly at the atomic level; the interface charge creating electric field discontinuity causing first electric field to attain the breakdown field in the multiplication region and the second electric field to be low or zero in the absorption layer to thereby eliminate the need for a doped charge layer and the associated thickness of the doped charge layer required to transition from the low field to the high field. Also claimed is a method of making.
摘要翻译：一种雪崩光电探测器，包括由具有第一极化的第一材料形成的倍增层; 所述乘法层在施加偏置电压时具有第一电场; 由具有与所述乘法层形成界面的第二极化的第二材料形成的吸收层; 所述吸收层在施加所述偏置电压时具有第二电场，所述第二电场小于所述第一电场或基本为零，由吸收层吸收的光产生的载流子由于所述第一电场而被乘以所述乘法层领域; 所述吸收层具有大于或小于所述第一极化的第二极化，从而产生界面电荷; 当第一材料主要乘以孔时，界面电荷为正，当第一材料主要乘以电子时，界面电荷为负，界面处的电场在原子级突然发生变化; 所述接口电荷产生电场不连续性使得第一电场在所述乘法区域中获得击穿场，并且所述第二电场在所述吸收层中为低或零，从而消除对掺杂电荷层的需要和相关联的厚度掺杂电荷层需要从低场转换到高场。还要求保护的是一种制造方法。

13. 发明授权

US06476596B1 Method and apparatus for detection of terahertz electric fields using polarization-sensitive excitonic electroabsorption 失效
标题翻译：使用极化敏感激子电吸收检测太赫兹电场的方法和装置
公开(公告)号：US06476596B1
公开(公告)日：2002-11-05
申请号：US09459386
申请日：1999-12-06
申请人： Michael Wraback , Paul Shen , Mitra Dutta
发明人： Michael Wraback , Paul Shen , Mitra Dutta
IPC分类号： G01R3102
CPC分类号： B82Y20/00 , G01N21/3581 , H01L31/035236
摘要： A terahertz electromagnetic energy detector comprises a (100) oriented multiple quantum well thermally bonded to a first transparent substrate having a direction dependent thermal coefficient of expansion such that this coefficient matches the thermal coefficient of expansion of MQW in one direction but different form the direction-dependent thermal coefficient of expansion of the MQW in a perpendicular direction. The resultant internal thermally induced anisotropic strain leads to a polarization dependence of the optical absorption that is strongest near the lowest heavy-hole and light-hole exciton peaks. A second transparent substrate is placed beneath the first transparent substrate and is oriented so that its thermal coefficients of expansion act in a direction perpendicular to those of the first transparent substrate so that the accumulated phase retardation of the optical wave associated with birefringence of the substrate is effectively cancelled. A transverse electric and electromagnetic field is applied across the plane of the quantum well layers to ionize the excitons, which produces an anisotropic bleaching and concomitant line broadening of the anisotropic excitonic absorption. This phenomenon results in a polarization rotation of the transmitted optical field such that light passing through the device may be detected by a photosensitive polarization detector. The device is capable of effectively measuring the phase and frequency of terahertz energy over a wide bandwidth.
摘要翻译：太赫兹电磁能量检测器包括热粘合到具有方向依赖的热膨胀系数的第一透明衬底的（100）定向多量子阱，使得该系数与MQW在一个方向上的热膨胀系数匹配但不同，形成方向 - 依赖于MQW在垂直方向上的热膨胀系数。所得的内部热诱导各向异性应变导致在最低重孔和光空穴激子峰附近最强的光吸收的偏振依赖性。将第二透明基板放置在第一透明基板下方并且被定向成使得其热膨胀系数在垂直于第一透明基板的方向上起作用，使得与基板的双折射相关联的光波的累积相位延迟为有效取消。跨越量子阱层的平面上施加横向电场和电磁场，以使激子离子化，这产生各向异性漂白和各向异性激子吸收的伴随线宽。这种现象导致透射光场的偏振旋转，使得通过该器件的光可以由光敏极化检测器检测。该器件能够在宽带宽内有效测量太赫兹能量的相位和频率。

14. 发明申请

US20110291108A1 SEMICONDUCTOR PHOTODETECTOR WITH TRANSPARENT INTERFACE CHARGE CONTROL LAYER AND METHOD THEREOF 有权
标题翻译：具有透明接口充电控制层的半导体光电二极管及其方法
公开(公告)号：US20110291108A1
公开(公告)日：2011-12-01
申请号：US13114254
申请日：2011-05-24
申请人： Paul H. Shen , Michael Wraback , Anand V. Sampath
发明人： Paul H. Shen , Michael Wraback , Anand V. Sampath
IPC分类号： H01L31/028 , H01L31/0352
CPC分类号： H01L31/03687 , H01L31/105 , H01L31/107 , H01L31/1812 , Y02E10/548
摘要： A detection device comprising a photodetector comprising a first semiconductor layer through which light first enters the photodetector; the first semiconductor layer to semiconductor material crystal lattice which terminates at an interface; the discontinuity of the semiconductor crystal lattice at the interface creating a first interface charge; the first semiconductor layer being an absorption layer in which photons in a predetermined wavelength range are absorbed and create photogenerated carriers; and a second polar semiconductor layer deposited on the crystal lattice of the first semiconductor layer, the second polar semiconductor being substantially transparent to light in the predetermined wavelength range, the second polar semiconductor layer having a total polarization different from the first semiconductor layer so that a second interface charge is induced at the interface between the first and second semiconductor layers; the induced second interface charge reduces or substantially cancels the first interface charge; whereby the reduction or substantial cancellation of the surface charge in the first semiconductor layer increases the collection of photogenerated carriers by the photodetector. A method of improving the quantum efficiency of a semiconductor photodetector comprising providing a semiconductor photodetector having a first layer which has a first interface through which light first enters the semiconductor photodetector; placing a layer of polar material transparent to the band of detection wavelengths that has a polarization substantially different than the polarization of the first layer such that the polarization charge induced at the interface between the layer of polar material and the first surface results in decreased interface recombination of photogenerated minority carriers and an increase in quantum efficiency of the photodetector.
摘要翻译：一种检测装置，包括光检测器，其包括第一半导体层，光首先通过该第一半导体层进入光电检测器在界面处终止的第一半导体层到半导体材料晶格; 在界面处的半导体晶格的不连续性产生第一界面电荷; 第一半导体层是其中吸收预定波长范围的光子并产生光生载流子的吸收层; 以及沉积在所述第一半导体层的晶格上的第二极性半导体层，所述第二极性半导体对于所述预定波长范围内的光基本上是透明的，所述第二极性半导体层具有与所述第一半导体层不同的总偏振，在第一和第二半导体层之间的界面处感应出第二界面电荷; 感应的第二接口电荷减少或基本上抵消第一接口电荷; 由此减少或基本消除第一半导体层中的表面电荷增加了光电检测器对光生载流子的收集。一种提高半导体光电检测器的量子效率的方法，包括提供具有第一层的半导体光电检测器，该第一层具有第一界面，光通过该第一界面首先进入半导体光电检测器; 将具有与第一层的极化基本不同的极化的检测波长带透明的极性材料层透明，使得在极性材料层和第一表面之间的界面处诱导的极化电荷导致界面复合减少的光产生的少数载流子和光电检测器的量子效率的提高。

15. 发明申请

US20100276710A1 Ultraviolet Light Emitting AlGaN Composition And Ultraviolet Light Emitting Device Containing Same 有权
标题翻译：紫外光发射AlGaN组成和含有它的紫外线发光装置
公开(公告)号：US20100276710A1
公开(公告)日：2010-11-04
申请号：US12834409
申请日：2010-07-12
申请人： Anand Venktesh Sampath , Charles J. Collins , Gregory Alan Garrett , H. Paul Shen , Michael Wraback
发明人： Anand Venktesh Sampath , Charles J. Collins , Gregory Alan Garrett , H. Paul Shen , Michael Wraback
IPC分类号： H01L33/30 , H01L33/00
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02631 , H01S5/10 , H01S5/3209 , H01S5/34333
摘要： An AlGaN composition is provided comprising a group III-Nitride active region layer, for use in an active region of a UV light emitting device, wherein light-generation occurs through radiative recombination of carriers in nanometer scale size, compositionally inhomogeneous regions having band-gap energy less than the surrounding material. Further, a semiconductor UV light emitting device having an active region layer comprised of the AlGaN composition above is provided, as well as a method of producing the AlGaN composition and semiconductor UV light emitting device, involving molecular beam epitaxy.
摘要翻译：提供了一种AlGaN组合物，其包括III族氮化物有源区，用于UV发光器件的有源区，其中通过纳米级尺寸的载流子的辐射复合发生光产生，具有带隙的组成不均匀区能量小于周围材料。此外，提供了具有由上述AlGaN组合物构成的有源区域层的半导体UV发光元件，以及制造包含分子束外延的AlGaN组合物和半导体UV发光元件的方法。

16. 发明授权

US07498182B1 Method of manufacturing an ultraviolet light emitting AlGaN composition and ultraviolet light emitting device containing same 有权
标题翻译：制造紫外线发光AlGaN组合物的方法和含有它的紫外线发射装置
公开(公告)号：US07498182B1
公开(公告)日：2009-03-03
申请号：US11376452
申请日：2006-03-15
申请人： Anand Venktesh Sampath , Charles J. Collins , Gregory Alan Garrett , Paul Hongen Shen , Michael Wraback
发明人： Anand Venktesh Sampath , Charles J. Collins , Gregory Alan Garrett , Paul Hongen Shen , Michael Wraback
IPC分类号： H01L21/00 , H01L21/28
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02631 , H01S5/10 , H01S5/3209 , H01S5/34333
摘要： An AlGaN composition is provided comprising a group III-Nitride active region layer, for use in an active region of a UV light emitting device, wherein light-generation occurs through radiative recombination of carriers in nanometer scale size, compositionally inhomogeneous regions having band-gap energy less than the surrounding material. Further, a semiconductor UV light emitting device having an active region layer comprised of the AlGaN composition above is provided, as well as a method of producing the AlGaN composition and semiconductor UV light emitting device, involving molecular beam epitaxy.
摘要翻译：提供了一种AlGaN组合物，其包括III族氮化物有源区，用于UV发光器件的有源区，其中通过纳米级尺寸的载流子的辐射复合发生光产生，具有带隙的组成不均匀区能量小于周围材料。此外，提供了具有由上述AlGaN组合物构成的有源区域层的半导体UV发光元件，以及制造包含分子束外延的AlGaN组合物和半导体UV发光元件的方法。

17. 发明申请

US20060169970A1 Creation of anisotropic strain in semiconductor quantum well 失效
标题翻译：在半导体量子阱中形成各向异性应变
公开(公告)号：US20060169970A1
公开(公告)日：2006-08-03
申请号：US11051270
申请日：2005-02-03
申请人： Michael Wraback , Mitra Dutta , Paul Shen
发明人： Michael Wraback , Mitra Dutta , Paul Shen
IPC分类号： H01L31/109
CPC分类号： G02F1/01725 , B82Y20/00 , G02F2001/0157 , H01L21/02403 , H01L21/02507 , H01L21/0254 , H01L21/02546 , H01L29/2003 , H01L29/205 , H01L33/06
摘要： Methods and devices for creating an anisotropic strain in a semiconductor quantum well structure to induce anisotropy thereof are disclosed herein. Initially, a substrate is provided, and a quantum well structure formed upon the substrate. A first crystalline layer (e.g., a GaAs layer) having a first crystalline phase can then be deposited upon the quantum well structure. Thereafter, a second crystalline layer (e.g., a GaN layer) having a second crystalline phase and a thickness thereof can be formed upon the first crystalline layer to thereby induce an anisotropic strain in the quantum well structure to produce a quantum well device thereof. Additionally, the second crystalline layer (e.g., GaN) can be formed from a transparent material and utilized as an anti-reflection layer. By properly choosing the thickness of the second crystalline layer (e.g., a GaN layer), a desired anisotropic strain as well as a desired anti-reflection wavelength can be achieved.
摘要翻译：本文公开了在半导体量子阱结构中产生各向异性应变以诱发其各向异性的方法和装置。首先，提供衬底和形成在衬底上的量子阱结构。具有第一结晶相的第一晶体层（例如，GaAs层）可以沉积在量子阱结构上。此后，可以在第一结晶层上形成具有第二结晶相和其厚度的第二结晶层（例如，GaN层），从而在量子阱结构中引起各向异性应变以产生其量子阱器件。另外，第二晶体层（例如，GaN）可以由透明材料形成并用作抗反射层。通过适当地选择第二结晶层（例如，GaN层）的厚度，可以实现期望的各向异性应变以及期望的抗反射波长。

18. 发明授权

US06366389B1 High contrast, ultrafast optically-addressed ultraviolet light modulator based upon optical anisotropy 失效
标题翻译：基于光学各向异性的高对比度，超快光学寻址紫外光调制器
公开(公告)号：US06366389B1
公开(公告)日：2002-04-02
申请号：US09638156
申请日：2000-08-15
申请人： Michael Wraback , Paul H. Shen , Shaohua Liang , Chandrasekhar R. Gorla , Yicheng Lu
发明人： Michael Wraback , Paul H. Shen , Shaohua Liang , Chandrasekhar R. Gorla , Yicheng Lu
IPC分类号： G02F107
CPC分类号： B82Y20/00 , G02F1/0126 , G02F1/3515 , G02F1/3523 , G02F1/3556
摘要： A high contrast ultrahigh speed optically-addressed ultraviolet light modulator exploits the optical anisotropy in a ZnO film epitaxially grown on (01 {overscore (1)}2) sapphire. This device, which could also be realized in a ZnO bulk crystal or similar wide bandgap material, achieves both high contrast and high speed by exploiting the anisotropic bleaching of the anisotropic absorption and concomitant ultrafast polarization rotation near the lowest exciton resonances produced by femtosecond ultraviolet pulses. The resultant modulation in a preferred embodiment is characterized by a contrast ratio of 70:1, corresponding to a dynamic polarization rotation of 12°, and decays to a quasi-equilibrium value within 100 ps.
摘要翻译：高对比度超高速光学寻址紫外光调制器利用在（01 {overscore（1）} 2）蓝宝石外延生长的ZnO膜中的光学各向异性。该器件也可以在ZnO体晶或类似的宽带隙材料中实现，通过利用由飞秒紫外脉冲产生的最低激子谐振附近的各向异性吸收和伴随的超快速偏振旋转的各向异性漂白，实现高对比度和高速度。在优选实施例中的结果调制的特征在于对应于12°的动态极化旋转的70:1的对比度，并且在100ps内衰减到准平衡值。

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