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11. 发明授权

US07675091B2 Semiconductor wafer and method of fabricating the same 有权
标题翻译：半导体晶片及其制造方法
公开(公告)号：US07675091B2
公开(公告)日：2010-03-09
申请号：US11463137
申请日：2006-08-08
申请人： Young-Soo Park , Kyoo-Chul Cho , Shin-Hyeok Han , Tae-Soo Kang
发明人： Young-Soo Park , Kyoo-Chul Cho , Shin-Hyeok Han , Tae-Soo Kang
IPC分类号： H01L29/80
CPC分类号： H01L29/045 , H01L21/76251 , H01L21/84 , H01L27/1203 , H01L29/78687 , H01L29/78696
摘要： Disclosed is a semiconductor wafer and method of fabricating the same. The semiconductor wafer is comprised of a semiconductor layer formed on an insulation layer on a base substrate. The semiconductor layer includes a surface region organized in a first crystallographic orientation, and another surface region organized in a second crystallographic orientation. The performance of a semiconductor device with unit elements that use charges, which are activated in high mobility to the crystallographic orientation, as carriers is enhanced. The semiconductor wafer is completed by forming the semiconductor layer with the second crystallographic orientation on the plane of the first crystallographic orientation, growing an epitaxial layer, forming the insulation layer on the epitaxial layer, and then bonding the insulation layer to the base substrate.
摘要翻译：公开了半导体晶片及其制造方法。半导体晶片由在基底基板上的绝缘层上形成的半导体层构成。半导体层包括以第一晶体取向组织的表面区域和以第二晶体取向组织的另一表面区域。带有单元元件的半导体器件的性能随着载流子的增强而被使用以高结晶取向的高迁移率激活的电荷。半导体晶片通过在第一晶体取向的平面上形成具有第二晶体取向的半导体层，生长外延层，在外延层上形成绝缘层，然后将绝缘层接合到基底来完成。

12. 发明授权

US07648854B2 Methods of forming metal oxide layers, methods of forming gate structures using the same, and methods of forming capacitors using the same 有权
标题翻译：形成金属氧化物层的方法，使用其形成栅极结构的方法以及使用其形成电容器的方法
公开(公告)号：US07648854B2
公开(公告)日：2010-01-19
申请号：US11985672
申请日：2007-11-16
申请人： Jung-Ho Lee , Jun-Hyun Cho , Youn-Joung Cho , Seung-Min Ryu , Kyoo-Chul Cho , Jung-Sik Choi
发明人： Jung-Ho Lee , Jun-Hyun Cho , Youn-Joung Cho , Seung-Min Ryu , Kyoo-Chul Cho , Jung-Sik Choi
IPC分类号： H01L21/00 , H01L21/16 , H01L21/20 , H01L21/31 , H01L21/469
CPC分类号： C23C16/405 , C23C16/45553 , H01L21/02178 , H01L21/02181 , H01L21/02186 , H01L21/02189 , H01L21/0228 , H01L21/3141 , H01L21/3142 , H01L21/31604 , H01L21/3162 , H01L21/31641 , H01L21/31645
摘要： Provided herein are methods of forming a metal oxide layer that include providing an organometallic compound and an oxidizing agent to the substrate to form the metal oxide layer on the substrate. The organometallic compound may have the general formula of M(NR1R2)3R3, wherein M is a metal; R1 and R2 are each independently hydrogen or alkyl; and R3 is selected from the group consisting of alkyl, cycloalkyl, heterocycloalkyl, aryl and heteroaryl.
摘要翻译：本文提供形成金属氧化物层的方法，其包括向基板提供有机金属化合物和氧化剂以在基板上形成金属氧化物层。有机金属化合物可以具有通式M（NR1R2）3R3，其中M是金属; R1和R2各自独立地为氢或烷基; 并且R 3选自烷基，环烷基，杂环烷基，芳基和杂芳基。

13. 发明授权

US07573123B2 Semiconductor device and method for forming the same 有权
标题翻译：半导体装置及其形成方法
公开(公告)号：US07573123B2
公开(公告)日：2009-08-11
申请号：US11775130
申请日：2007-07-09
申请人： Young-Soo Park , Kyoo-Chul Cho , Hee-Sung Kim , Tae-Soo Kang , Sam-Jong Choi
发明人： Young-Soo Park , Kyoo-Chul Cho , Hee-Sung Kim , Tae-Soo Kang , Sam-Jong Choi
IPC分类号： H01L29/04 , H01L31/036
CPC分类号： H01L21/76254 , H01L27/1207 , H01L27/1211 , H01L29/66795
摘要： Provided are a semiconductor device, and a method of forming the same. In one embodiment, the semiconductor device includes a semiconductor layer, first and second semiconductor fins, an insulating layer, and an inter-fin connection member. The first and second semiconductor fins are placed on the semiconductor layer, and have different crystal directions. The first semiconductor fin is connected to the semiconductor layer, and has the equivalent crystal direction as that of the semiconductor layer. The insulating layer is interposed between the second semiconductor fin and the semiconductor layer, and has an opening in which the first semiconductor fin is inserted. The inter-fin connection member connects the first semiconductor fin and the second semiconductor fin together on the insulating layer.
摘要翻译：提供半导体器件及其形成方法。在一个实施例中，半导体器件包括半导体层，第一和第二半导体鳍片，绝缘层和鳍间连接构件。第一和第二半导体散热片放置在半导体层上，具有不同的晶体方向。第一半导体鳍状物与半导体层连接，具有与半导体层相同的晶体方向。绝缘层介于第二半导体鳍片和半导体层之间，并且具有插入第一半导体鳍片的开口。翅片间连接构件将第一半导体翅片和第二半导体翅片在绝缘层上连接起来。

14. 发明申请

US20070066061A1 Organic aluminum precursor and method of forming a metal wire using the same 失效
标题翻译：有机铝前体和使用其形成金属丝的方法
公开(公告)号：US20070066061A1
公开(公告)日：2007-03-22
申请号：US11523604
申请日：2006-09-20
申请人： Jung-Sik Choi , Jung-Ho Lee , Jun-Hyun Cho , Youn-Joung Cho , Tae-Sung Kim , Mi-Ae Kim , Kyoo-Chul Cho , Dong-Jun Lee
发明人： Jung-Sik Choi , Jung-Ho Lee , Jun-Hyun Cho , Youn-Joung Cho , Tae-Sung Kim , Mi-Ae Kim , Kyoo-Chul Cho , Dong-Jun Lee
IPC分类号： H01L21/44
CPC分类号： H01L21/28556 , C07F5/069 , C23C16/18 , H01L21/32051 , H01L21/76876 , H01L21/76877
摘要： An organic aluminum precursor includes aluminum as a central metal, and borohydride and trimethylamine as ligands. In a method of forming an aluminum layer or wire, the organic aluminum presursor is introduced onto a substrate, and then thermally decomposed. The aluminum decomposed from the organic aluminum precursor is deposited on the substrate.
摘要翻译：有机铝前体包括铝作为中心金属，硼氢化物和三甲胺作为配体。在形成铝层或线材的方法中，将有机铝前驱体引入到基板上，然后热分解。从有机铝前体分解的铝沉积在基材上。

15. 发明授权

US08268397B2 Organometallic precursor, thin film having the same, metal wiring including the thin film, method of forming a thin film and method of manufacturing a metal wiring using the same 有权
标题翻译：有机金属前体，具有该薄膜的薄膜，包含该薄膜的金属布线，形成薄膜的方法及使用其制造金属布线的方法
公开(公告)号：US08268397B2
公开(公告)日：2012-09-18
申请号：US12219983
申请日：2008-07-31
申请人： Youn-Joung Cho , Jung-Ho Lee , Jun-Hyun Cho , Seung-Min Ryu , Kyoo-Chul Cho , Jung-Sik Choi
发明人： Youn-Joung Cho , Jung-Ho Lee , Jun-Hyun Cho , Seung-Min Ryu , Kyoo-Chul Cho , Jung-Sik Choi
IPC分类号： B05D1/36 , C23C16/00
CPC分类号： C23C16/18 , C07F5/00 , C07F5/069 , C23C16/20 , Y10T428/24331
摘要： Disclosed are an organometallic precursor that may be used in manufacturing a semiconductor device, a thin film having the same, a metal wiring including the thin film, a method of forming a thin film and a method of manufacturing a metal wiring. An organometallic precursor including a central metal, a borohydride ligand and an amine ligand for reducing a polarity of the organometallic precursor may be provided onto a substrate, and may be thermally decomposed to form a thin film on the substrate. The organometallic precursor having a reduced polarity may be provided to a chamber with a constant flow rate, and thus stability and/or efficiency of a semiconductor manufacturing process may be improved.
摘要翻译：公开了可用于制造半导体器件的有机金属前体，具有该有机金属前体的薄膜，包括该薄膜的金属布线，薄膜形成方法以及金属布线的制造方法。包括用于降低有机金属前体极性的中心金属，硼氢化物配体和胺配体的有机金属前驱体可以提供到基底上，并且可以被热分解以在基底上形成薄膜。具有降低的极性的有机金属前体可以以恒定的流速提供给室，因此可以提高半导体制造工艺的稳定性和/或效率。

16. 发明申请

US20090096014A1 NONVOLATILE MEMORY DEVICES THAT INCLUDE AN INSULATING FILM WITH NANOCRYSTALS EMBEDDED THEREIN AND METHODS OF MANUFACTURING THE SAME 审中-公开
标题翻译：包含嵌入其中的纳米晶体的绝缘膜的非易失性存储器件及其制造方法
公开(公告)号：US20090096014A1
公开(公告)日：2009-04-16
申请号：US12137109
申请日：2008-06-11
申请人： Sam-Jong Choi , Kyoo-Chul Cho , Jung-Sik Choi , Hee-sung Kim , Tae-Soo Kang , Yoon-Hee Lee
发明人： Sam-Jong Choi , Kyoo-Chul Cho , Jung-Sik Choi , Hee-sung Kim , Tae-Soo Kang , Yoon-Hee Lee
IPC分类号： H01L29/792 , H01L21/31
CPC分类号： H01L21/02175 , H01L21/022 , H01L21/02356 , H01L21/31155 , H01L21/316 , H01L27/115 , H01L29/40114 , H01L29/42332 , H01L29/513 , H01L29/7883 , H01L29/7885
摘要： A nonvolatile memory device includes a semiconductor substrate, a charge-trap structure disposed on the semiconductor substrate, which includes an insulating film and a plurality of carbon nanocrystals embedded in the insulating film, and a gate disposed on the charge-trap structure. The nonvolatile memory device may exhibit memory hysteresis characteristics with improved reliability.
摘要翻译：非易失性存储器件包括半导体衬底，设置在半导体衬底上的电荷陷阱结构，其包括绝缘膜和嵌入在绝缘膜中的多个碳纳米晶体，以及设置在电荷捕获结构上的栅极。非易失性存储器件可以具有提高的可靠性的存储滞后特性。

17. 发明授权

US07488684B2 Organic aluminum precursor and method of forming a metal wire using the same 失效
标题翻译：有机铝前体和使用其形成金属丝的方法
公开(公告)号：US07488684B2
公开(公告)日：2009-02-10
申请号：US11523604
申请日：2006-09-20
申请人： Jung-Sik Choi , Jung-Ho Lee , Jun-Hyun Cho , Youn-Joung Cho , Tae-Sung Kim , Mi-Ae Kim , Kyoo-Chul Cho , Dong-Jun Lee
发明人： Jung-Sik Choi , Jung-Ho Lee , Jun-Hyun Cho , Youn-Joung Cho , Tae-Sung Kim , Mi-Ae Kim , Kyoo-Chul Cho , Dong-Jun Lee
IPC分类号： H01L21/285
CPC分类号： H01L21/28556 , C07F5/069 , C23C16/18 , H01L21/32051 , H01L21/76876 , H01L21/76877
摘要： An organic aluminum precursor includes aluminum as a central metal, and borohydride and trimethylamine as ligands. In a method of forming an aluminum layer or wire, the organic aluminum presursor is introduced onto a substrate, and then thermally decomposed. The aluminum decomposed from the organic aluminum precursor is deposited on the substrate.
摘要翻译：有机铝前体包括铝作为中心金属，硼氢化物和三甲胺作为配体。在形成铝层或线材的方法中，将有机铝前驱体引入到基板上，然后热分解。从有机铝前体分解的铝沉积在基材上。

18. 发明申请

US20080057224A1 Method of forming a thin film and methods of manufacturing a gate structure and a capacitor using same 审中-公开
标题翻译：形成薄膜的方法和使用其制造栅极结构和电容器的方法
公开(公告)号：US20080057224A1
公开(公告)日：2008-03-06
申请号：US11790445
申请日：2007-04-25
申请人： Youn-Joung Cho , Jung-Ho Lee , Jun-Hyun Cho , Seung-Min Ryu , Kyoo-Chul Cho , Jung-Sik Choi
发明人： Youn-Joung Cho , Jung-Ho Lee , Jun-Hyun Cho , Seung-Min Ryu , Kyoo-Chul Cho , Jung-Sik Choi
IPC分类号： C23C8/00
CPC分类号： C23C8/80 , C23C4/123 , C23C8/02
摘要： A method of manufacturing a thin film includes providing a metal organic precursor onto a substrate where the metal organic precursor is heated to a temperature of about 60° C. to about 95° C. and has a saturated vapor pressure of about 1 Torr to about 5 Torr. An oxidizing agent including oxygen for oxidizing the metal organic precursor is provided onto the substrate. The metal organic precursor and the oxidizing agent are chemically reacted to form the thin film including metal oxide. The thin film is easily available in a gate insulation layer of a gate structure, a dielectric layer of a capacitor, and similar circuit components.
摘要翻译：制造薄膜的方法包括将金属有机前体提供到基底上，其中将金属有机前体加热至约60℃至约95℃的温度，并具有约1托至约 5乇将包含用于氧化金属有机前体的氧的氧化剂提供到基底上。金属有机前体和氧化剂在化学上反应以形成包括金属氧化物的薄膜。该薄膜可容易地用于栅极结构的栅极绝缘层，电容器的介电层和类似的电路部件。

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