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    • 12. 发明授权
    • Sensor
    • 传感器
    • US5259247A
    • 1993-11-09
    • US825945
    • 1992-01-27
    • Frank Bantien
    • Frank Bantien
    • G01L9/04B81B3/00G01L9/00G01L9/12G01P15/08G01P15/125H01L29/84G01L7/08
    • G01P15/125G01L9/0073G01P15/0802
    • A sensor for measuring pressure and acceleration is proposed; it has a monocrystalline silicon substrate (10) with a succession of thin films applied to its first primary surface. A deflectable membrane (12) in a frame (11) is structured out of the silicon substrate (10), and the membrane (12) is formed in the first primary surface. The membrane (12) has a reinforcement zone. In the succession of thin films that is applied to the first primary surface, there is a structure (50) having at least one first substructure, which is disposed parallel to the first primary surface of the silicon substrate (10). There is a gap between the first substructure and the silicon substrate (10). The first substructure is joined to the membrane (12) in the region of the reinforcement zone. It protrudes past the membrane (12) and extends at least partway over the frame (11). This first substructure forms one electrode of a capacitor. At least one first counterelectrode (161, 162) of the capacitor is disposed opposite the first substructure, in the region of the frame (11).
    • 提出了一种用于测量压力和加速度的传感器; 它具有单晶硅衬底(10),其具有应用于其第一主表面的一系列薄膜。 框架(11)中的可偏转膜(12)由硅衬底(10)构成,并且膜(12)形成在第一主表面中。 膜(12)具有加强区。 在施加到第一主表面的薄膜的连续中,存在具有平行于硅衬底(10)的第一主表面设置的至少一个第一子结构的结构(50)。 在第一子结构和硅衬底(10)之间存在间隙。 第一子结构在加强区域的区域中连接到膜(12)。 它突出超过膜(12)并至少在框架(11)上延伸。 该第一子结构形成电容器的一个电极。 电容器的至少一个第一反电极(161,162)在框架(11)的区域中与第一子结构相对设置。