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11. 发明申请

US20060261345A1 High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same 有权
标题翻译：具有双向阻挡能力的高压碳化硅器件及其制造方法
公开(公告)号：US20060261345A1
公开(公告)日：2006-11-23
申请号：US11131509
申请日：2005-05-18
申请人： Sei-Hyung Ryu , Jason Jenny , Mrinal Das , Hudson Hobgood , Anant Agarwal , John Palmour
发明人： Sei-Hyung Ryu , Jason Jenny , Mrinal Das , Hudson Hobgood , Anant Agarwal , John Palmour
IPC分类号： H01L31/0312
CPC分类号： H01L29/74 , H01L29/0661 , H01L29/1608
摘要： High voltage silicon carbide (SiC) devices, for example, thyristors, are provided. A first SiC layer having a first conductivity type is provided on a first surface of a voltage blocking SiC substrate having a second conductivity type. A first region of SiC is provided on the first SiC layer and has the second conductivity type. A second region of SiC is provided in the first SiC layer. The second region of SiC has the first conductivity type and is adjacent to the first region of SiC. A second SiC layer having the first conductivity type is provided on a second surface, opposite the first surface, of the voltage blocking SiC substrate. First, second and third contacts are provided on the first region of SiC, the second region of SiC and the second SiC layer, respectively. Related methods of fabricating high voltage SiC devices are also provided.
摘要翻译：提供高压碳化硅（SiC）器件，例如晶闸管。具有第一导电类型的第一SiC层设置在具有第二导电类型的压电SiC衬底的第一表面上。 SiC的第一区域设置在第一SiC层上并具有第二导电类型。 SiC的第二区域设置在第一SiC层中。 SiC的第二区域具有第一导电类型并且与SiC的第一区域相邻。具有第一导电类型的第二SiC层设置在压电SiC衬底的与第一表面相对的第二表面上。首先，分别在SiC的第一区域，SiC的第二区域和第二SiC层上设置第二和第三触点。还提供了制造高电压SiC器件的相关方法。

12. 发明申请

US20060261347A1 High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities and methods of fabricating the same 有权
标题翻译：具有双向阻挡能力的高电压碳化硅MOS双极器件及其制造方法
公开(公告)号：US20060261347A1
公开(公告)日：2006-11-23
申请号：US11132355
申请日：2005-05-18
申请人： Sei-Hyung Ryu , Jason Jenny , Mrinal Das , Hudson Hobgood , Anant Agarwal , John Palmour
发明人： Sei-Hyung Ryu , Jason Jenny , Mrinal Das , Hudson Hobgood , Anant Agarwal , John Palmour
IPC分类号： H01L29/15
CPC分类号： H01L29/7395 , H01L29/1608 , H01L29/66068 , H01L29/66333
摘要： Silicon carbide high voltage semiconductor devices and methods of fabricating such devices are provided. The devices include a voltage blocking substrate. Insulated gate bipolar transistors are provided that have a voltage blocking substrate. Planar and beveled edge termination may be provided.
摘要翻译：提供了碳化硅高压半导体器件及其制造方法。这些器件包括电压阻挡衬底。提供具有电压阻挡衬底的绝缘栅双极晶体管。可以提供平面和斜边缘终止。

13. 发明申请

US20060261348A1 High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same 有权
标题翻译：具有双向阻挡能力的高压碳化硅器件及其制造方法
公开(公告)号：US20060261348A1
公开(公告)日：2006-11-23
申请号：US11159972
申请日：2005-06-23
申请人： Sei-Hyung Ryu , Jason Jenny , Mrinal Das , Anant Agarwal , John Palmour , Hudson Hobgood
发明人： Sei-Hyung Ryu , Jason Jenny , Mrinal Das , Anant Agarwal , John Palmour , Hudson Hobgood
IPC分类号： H01L31/0312
CPC分类号： H01L29/66068 , H01L29/0661 , H01L29/1608 , H01L29/6606 , H01L29/747 , H01L29/87 , H01L2924/10156
摘要： High voltage silicon carbide (SiC) devices, for example, thyristors, are provided. A first SiC layer having a first conductivity type is provided on a first surface of a voltage blocking SiC substrate having a second conductivity type. A first region of SiC is provided on the first SiC layer and has the second conductivity type. A second region of SiC is provided in the first SiC layer, has the first conductivity type and is adjacent to the first region of SiC. A second SiC layer having the first conductivity type is provided on a second surface of the voltage blocking SiC substrate. A third region of SiC is provided on the second SiC layer and has the second conductivity type. A fourth region of SiC is provided in the second SiC layer, has the first conductivity type and is adjacent to the third region of SiC. First and second contacts are provided on the first and third regions of SiC, respectively. Related methods of fabricating high voltage SiC devices are also provided.
摘要翻译：提供高压碳化硅（SiC）器件，例如晶闸管。具有第一导电类型的第一SiC层设置在具有第二导电类型的压电SiC衬底的第一表面上。 SiC的第一区域设置在第一SiC层上并具有第二导电类型。 SiC的第二区域设置在第一SiC层中，具有第一导电类型并且与SiC的第一区域相邻。具有第一导电类型的第二SiC层设置在压电SiC衬底的第二表面上。 SiC的第三区域设置在第二SiC层上并具有第二导电类型。 SiC的第四区域设置在第二SiC层中，具有第一导电类型并且与SiC的第三区域相邻。第一和第二触点分别设置在SiC的第一和第三区域上。还提供了制造高电压SiC器件的相关方法。

14. 发明申请

US20050145164A9 Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen 有权
标题翻译：在含有氢的环境中生长超高纯碳化硅晶体
公开(公告)号：US20050145164A9
公开(公告)日：2005-07-07
申请号：US10628189
申请日：2003-07-28
申请人： David Malta , Jason Jenny , Hudson Hobgood
发明人： David Malta , Jason Jenny , Hudson Hobgood
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B23/00 , C30B29/36
摘要： A method is disclosed for producing semi-insulating silicon carbide crystal with a controlled nitrogen content. The method includes the steps of introducing an ambient gas containing hydrogen into a sublimation growth chamber, heating a silicon carbide source powder to sublimation in the hydrogen ambient growth chamber while, heating and then maintaining a silicon carbide seed crystal in the hydrogen ambient growth chamber to a second temperature below the temperature of the source powder, at which second temperature sublimed species from the source powder will condense upon the seed crystal, continuing to heat the silicon carbide source powder until a desired amount of silicon carbide crystal growth has occurred upon the seed crystal, while maintaining an ambient concentration of hydrogen in the growth chamber sufficient to minimize the amount of nitrogen incorporated into the growing silicon carbide crystal, and while maintaining the source powder and the seed crystal during sublimation growth at respective temperatures high enough to increase the number of point defects in the growing crystal to an amount that renders the resulting silicon carbide crystal semi-insulating.
摘要翻译：公开了一种制备具有受控氮含量的半绝缘碳化硅晶体的方法。该方法包括以下步骤：将含有氢气的环境气体引入升华生长室，将碳化硅源粉末加热到氢气环境生长室中升华，同时加热然后将氢气环境生长室中的碳化硅晶种维持在低于源粉末的温度的第二温度，来自源粉末的第二温度升华物质将在晶种上冷凝，继续加热碳化硅源粉末，直到种子发生所需量的碳化硅晶体生长晶体，同时保持生长室中的氢气的环境浓度足以使结合到生长的碳化硅晶体中的氮的量最小化，并且在升华过程中保持源粉末和晶种在相应的温度下足够高以增加数量在生长晶体中的点缺陷达到使所得碳化硅晶体半绝缘的量。

15. 发明申请

US20050022724A1 Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen 有权
标题翻译：在含有氢气的环境中生长超高纯碳化硅晶体
公开(公告)号：US20050022724A1
公开(公告)日：2005-02-03
申请号：US10628189
申请日：2003-07-28
申请人： David Malta , Jason Jenny , Hudson Hobgood
发明人： David Malta , Jason Jenny , Hudson Hobgood
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B23/00 , C30B29/36
摘要： A garment for the transporting, observing, entertaining, training, and displaying of small animals, reptiles and insects (gerbils, mice, snakes, tarantulas, spiders, lizards, etc.) in the tunnels of the garment while on the shoulders of their owners. The garment consists of a see-through, mesh washable fabric panel on top and a brightly colored washable panel underneath, attached to each other using releasable fasteners. The fasteners also provide means to construct tunnel walls and nesting areas for the small animal. The fasteners further provide attachment to the garment tunnel's floor and walls for toys and other paraphernalia to entertain the pet and adorn the garment. This garment allows the owner to hold, observe, and transport his pet without damaging or soiling his clothes while his pet has a tunnel in which to play and rest safely. Also the owner can remove toys, food and nesting material in order to launder the garment.
摘要翻译：在服装的隧道内运送，观察，娱乐，训练和展示小型动物，爬行动物和昆虫（沙鼠，老鼠，蛇，狼蛛，蜘蛛，蜥蜴等）的服装，。服装由顶部的透明，可网眼的织物面板和下面的明亮的可洗涤面板组成，使用可释放的紧固件彼此连接。紧固件还为小动物建造隧道墙和筑巢区域的手段。紧固件还提供了连接到衣物隧道的地板和墙壁上的玩具和其他用具来招待宠物并装饰服装。这种衣服允许所有者在他的宠物有一个可以安全地玩耍和休息的隧道的时候，保持，观察和运送他的宠物，而不会损坏或弄脏他的衣服。此外，业主可以去除玩具，食物和嵌套材料，以洗涤衣服。

16. 发明申请

US20070081150A1 Double side polished wafer scratch inspection tool 有权
标题翻译：双面抛光晶圆划痕检测工具
公开(公告)号：US20070081150A1
公开(公告)日：2007-04-12
申请号：US11211061
申请日：2005-08-24
申请人： Robert Leonard , Jason Jenny
发明人： Robert Leonard , Jason Jenny
IPC分类号： G01N21/00
CPC分类号： G01N21/9501 , G01N21/47 , G01N2021/8864
摘要： The invention is a method of inspecting a semiconductor wafer surface for scratches. The method includes positioning a semiconductor wafer for illumination by a radiation source and adjacent a background material that will absorb radiation from the radiation source, directing radiation at a surface of the wafer from the radiation source that has a wavelength that will be absorbed by the fundamental absorption of the wafer, filtering or otherwise limiting the radiation to allow only radiation having wavelengths that are absorbed by the fundamental absorption of the wafer to pass, and detecting radiation scattered on the surface of the wafer and filtered, by position, to thereby identify the location of the scratches on the surface of the wafer, while the absorption of the background material prevents other radiation from the source from interfering with the detection of the scratch-scattered radiation.
摘要翻译：本发明是检查半导体晶片表面以划伤的方法。该方法包括将辐射源定位用于照明的半导体晶片，并且邻近将吸收来自辐射源的辐射的背景材料，从晶片的表面引导辐射，该辐射源具有将被基底部分吸收的波长的辐射源吸收晶片，过滤或以其他方式限制辐射，以允许仅具有被晶片的基本吸收所吸收的波长的辐射通过，并且检测散射在晶片表面上并通过位置过滤的辐射，从而识别在晶片表面上划痕的位置，而背景材料的吸收防止来自源的其它辐射干扰了划痕辐射的检测。

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