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    • 12. 发明授权
    • Flexural plate wave systems
    • 弯曲板波系统
    • US06777727B2
    • 2004-08-17
    • US10304429
    • 2002-11-26
    • Gregory J. DunnAllyson BeuhlerDavid Penunuri
    • Gregory J. DunnAllyson BeuhlerDavid Penunuri
    • H01L2980
    • G01N29/245G01N29/022G01N29/222G01N2291/0256G01N2291/0427H01L27/20
    • An exemplary system and method for providing an acoustic plate wave apparatus is disclosed as comprising inter alia: a monocrystalline silicon substrate (200); an amorphous oxide material (220); a monocrystalline perovskite oxide material (230); a monocrystalline piezoelectric material (240); and a flexural plate wave component (250, 270) having an input interdigitated transducer (270), an output interdigitated transducer (250) and an optional support layer (260). Deposition or removal of material on or from an absorptive thin film sensor surface (210), or changes in the mechanical properties of the thin film (210) in contact with various chemical species, or changes in the electrical characteristics of a solvent solution exposed to the thin film (210) generally operate to produce measurable perturbations in the vector quantities (e.g., velocity, etc.) and scalar quantities (e.g., attenuation, etc.) of the acoustic plate modes.
    • 公开了一种用于提供声板波装置的示例性系统和方法,其包括:单晶硅衬底(200); 无定形氧化物材料(220); 单晶钙钛矿氧化物材料(230); 单晶压电材料(240); 以及具有输入交叉换能器(270)的弯曲板波分量(250,270),输出叉指换能器(250)和可选支撑层(260)。 在吸收薄膜传感器表面(210)上或从吸收薄膜传感器表面(210)上沉积或去除材料,或与各种化学物质接触的薄膜(210)的机械性能的变化,或暴露于 薄膜(210)通常用于在声板模式的矢量(例如,速度等)和标量(例如,衰减等)中产生可测量的扰动。
    • 13. 发明授权
    • Method for providing a piezoelectric substrate and surface acoustic wave
device with reduced bulk acoustic wave scattering
    • 提供具有减小的体声波散射的压电基片和声表面波器件的方法
    • US5896636A
    • 1999-04-27
    • US787059
    • 1997-01-22
    • David Penunuri
    • David Penunuri
    • H04R17/00H01L41/09H01L41/22H03H3/08H03H9/02H03H9/17H03H9/25H04R31/00
    • H03H9/02559H03H3/08Y10T29/42
    • A piezoelectric substrate (120) and a method for preparing same. The method includes steps of (i) providing a boule of piezoelectric material, (ii) orienting the boule to Euler angles chosen to provide a boundary condition matched to a partially-metallized surface and (iii) sawing the boule into at least a first slice (120) having first and second surfaces, at least one of the first and second surfaces comprising a planar surface. The method desirably but not essentially further includes steps of (iv) polishing at least one of the first and second surfaces to provide a substantially planar polished surface, (v) disposing a layer of metal on the at least one of the first and second surfaces and (vi) patterning the layer of metal to provide at least one interdigitated pattern (105, 110) comprising an acoustic wave transducer (105, 110), the acoustic wave transducer (105, 110) providing the boundary condition matched to a partially-metallized surface.
    • 一种压电基板(120)及其制备方法。 该方法包括以下步骤:(i)提供压电材料的原料块,(ii)将所述晶锭定向为所选择的欧拉角,以提供与部分金属化表面匹配的边界条件,以及(iii)将所述毛坯切割成至少第一切片 (120)具有第一和第二表面,所述第一和第二表面中的至少一个包括平坦表面。 该方法理想地但不是基本上进一步包括以下步骤:(iv)抛光第一和第二表面中的至少一个以提供基本平坦的抛光表面,(v)在第一和第二表面中的至少一个上设置金属层 提供至少一个包括声波传感器(105,110)的交错图案(105,110),所述声波换能器(105,110)提供与部分地耦合的边界条件匹配的边界条件, 金属化表面。
    • 14. 发明授权
    • Saw filter using low-pass configuration and method of providing the same
    • 锯片过滤器采用低通配置和提供相同的方法
    • US5854579A
    • 1998-12-29
    • US920192
    • 1997-08-25
    • David Penunuri
    • David Penunuri
    • H03H9/64H03H9/72
    • H03H9/6483
    • An acoustic wave resonator filter (10) provides series and shunt resonator elements (22, 24) in a ladder network. The series elements (22) are configured in a lowpass configuration. The shunt elements (24) act as impedance inverters in a passband of the filter and they series resonate at an antiresonant frequency of the series elements (22) in a stopband which provides additional isolation. The electrodes (14) of the elements (22, 24) are of a metal thickness which improve the losses of a series resonant frequency in a passband which improves insertion loss. However, any increase in loss near the antiresonant frequency is compensated by the reduced loss near the resonant frequency of the shunt elements (24). The lowpass configuration and the aligned series element antiresonant frequency and shunt element resonant frequency provides good insertion loss, good isolation between transmitting and receiving bands, and maintains good stopband characteristics while reducing the number of elements required for the ladder network.
    • 声波谐振器滤波器(10)在梯形网络中提供串联和并联谐振器元件(22,24)。 串联元件(22)被配置为低通配置。 分流元件(24)用作滤波器的通带中的阻抗反相器,并且它们以提供额外隔离的阻带中的串联元件(22)的反谐振频率串联谐振。 元件(22,24)的电极(14)具有金属厚度,其改善了通带中串联谐振频率的损耗,这改善了插入损耗。 然而,在反谐振频率附近的任何损耗增加都通过分流元件(24)的谐振频率附近的减小的损耗来补偿。 低通配置和对齐的串联元件反谐振频率和分流元件谐振频率提供良好的插入损耗,发射和接收频带之间的良好隔离,并且在减少梯形网络所需要的元件数量的同时保持良好的阻带特性。
    • 16. 发明授权
    • Acoustic wave filter and method of forming the same
    • 声波滤波器及其形成方法
    • US06424238B1
    • 2002-07-23
    • US09757191
    • 2001-01-08
    • David Penunuri
    • David Penunuri
    • H03H964
    • H03H9/6483H03H3/08H03H9/605
    • An acoustic wave filter (10) and a method (30) of forming the acoustic wave filter (10) are disclosed. The acoustic wave filter includes a substrate (20) supporting a first die (18) and a second die (18). The first die (18) and second die (18) include either a Surface Acoustic Wave (SAW) resonator or a Bulk Acoustic Wave (BAW) resonator, wherein one of the resonators is configured as a series resonator (12) of the acoustic wave filter (10) and the other resonator is configured as a shunt resonator (14) of the acoustic wave filter (10).
    • 公开了一种形成声波滤波器(10)的声波滤波器(10)和方法(30)。 声波滤波器包括支撑第一模具(18)和第二模具(18)的基板(20)。 第一管芯(18)和第二管芯(18)包括表面声波(SAW)谐振器或体声波(BAW)谐振器,其中谐振器之一被配置为声波的串联谐振器(12) 滤波器(10),另一个谐振器被配置为声波滤波器(10)的并联谐振器(14)。
    • 17. 发明授权
    • Method and apparatus for acoustic wave inductance
    • 声波电感的方法和装置
    • US5287036A
    • 1994-02-15
    • US844333
    • 1992-03-02
    • David Penunuri
    • David Penunuri
    • H03H9/00H03H9/02H01L41/08
    • H03H9/02629
    • An inductive element for impedance matching comprises an acoustic wave propagating substrate and an acoustic wave transducer coupled to the acoustic wave propagating substrate. The acoustic wave transducer has an effective length L.sub.eff such that Le.sub.eff .gtoreq.C.sub.2 v.sub.a /f.sub.o k.sup.2, where C.sub.2 is a numerical factor such that C.sub.2 .gtoreq.2, v.sub.a represents an acoustic velocity, f.sub.o represents an acoustic wave transducer center frequency and k.sup.2 denotes an acoustic wave propagating substrate electromechanical coupling coefficient. Reflecting elements are provided on the substrate in the principal acoustic propagation directions to form a resonant acoustic cavity. The device exhibits inductive impedance and high Q over a significant frequency range in small physical size.
    • 用于阻抗匹配的电感元件包括声波传播衬底和耦合到声波传播衬底的声波换能器。 声波换能器具有有效长度Leff,使得Leeff> = C2va / fok2,其中C2是C2> = 2的数值因子,va表示声速,fo表示声波换能器中心频率,k2表示声学 波传播基板机电耦合系数。 反射元件设置在基板上的主声传播方向上以形成谐振声腔。 该器件在物理尺寸小的显着频率范围内显示出电感阻抗和高Q值。
    • 19. 发明授权
    • Method for microelectronic device packaging employing capacitively
coupled connections
    • 采用电容耦合连接的微电子器件封装方法
    • US5212115A
    • 1993-05-18
    • US802929
    • 1991-12-06
    • Frederick Y. ChoGerald NorleyDavid Penunuri
    • Frederick Y. ChoGerald NorleyDavid Penunuri
    • H01L23/522
    • H01L23/5222H01L2924/0002Y10T29/42Y10T29/49005Y10T29/4913
    • A method for microelectronic device encapsulation is described comprising steps of providing a microelectronic device (e.g., a surface acoustic wave device) having interconnection contacts disposed thereon and depositing a passivation layer over the microelectronic device and the interconnection contacts. The method further comprises steps of providing alternating current coupled electrodes positioned on the passivation layer and over the interconnection contacts, providing a base substrate (including pressure contact electrodes and vias) and bonding the base substrate to the microelectronic device with a bonding agent for providing a mechanical bond between the microelectronic device and the base and for providing a hermetically sealed environment for the microelectronic device. The method further comprises providing electrical coupling between the pressure contact electrodes and the alternating current coupled electrodes. This method realizes compact microelectronic device packages which can be mass produced from entire microelectronic device substrate.
    • 描述了一种用于微电子器件封装的方法,其包括以下步骤:提供其上布置有互连触点的微电子器件(例如,表面声波器件),并在微电子器件和互连触点之上沉积钝化层。 该方法还包括以下步骤:提供位于钝化层上方和互连触点上的交流耦合电极,提供基底(包括压接触电极和通孔),并将基底衬底与用于提供 微电子器件与基底之间的机械结合,并为微电子器件提供气密密封的环境。 该方法还包括提供压力接触电极和交流耦合电极之间的电耦合。 该方法实现了可以从整个微电子器件衬底大规模生产的紧凑型微电子器件封装。