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11. 发明授权

US07405135B2 Substrate for stressed systems and method of making same 失效
标题翻译：强化系统基板及其制作方法
公开(公告)号：US07405135B2
公开(公告)日：2008-07-29
申请号：US11434930
申请日：2006-05-17
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
IPC分类号： H01L29/00
CPC分类号： H01L21/187 , B81C1/00365 , B81C2201/0191 , C30B25/183 , H01L21/0237 , H01L21/0243 , H01L21/02439 , H01L21/0245 , H01L21/02513 , H01L21/02658 , H01L21/02664 , H01L21/76254
摘要： A stress absorbing microstructure assembly including a support substrate having an accommodation layer that has plurality of motifs engraved or etched in a surface, a buffer layer and a nucleation layer. The stress absorbing microstructure assembly may also include an insulating layer between the buffer layer and the nucleation layer. This assembly can receive thick epitaxial layers thereon with concern of causing cracking of such layers.
摘要翻译：一种应力吸收微结构组件，包括具有在表面上雕刻或蚀刻的多个图案的容纳层的支撑衬底，缓冲层和成核层。应力吸收微结构组件还可以包括缓冲层和成核层之间的绝缘层。该组件可以在其上接收厚的外延层，同时引起这种层的破裂。

12. 发明申请

US20070287273A1 METHODS FOR MAKING SUBSTRATES AND SUBSTRATES FORMED THEREFROM 有权
标题翻译：用于制造基板的方法和形成的基板
公开(公告)号：US20070287273A1
公开(公告)日：2007-12-13
申请号：US11840696
申请日：2007-08-17
申请人： Alice Boussagol , Bruce Faure , Bruno Ghyselen , Fabrice Letertre , Olivier Rayssac , Pierre Rayssac , Gisele Rayssac
发明人： Alice Boussagol , Bruce Faure , Bruno Ghyselen , Fabrice Letertre , Olivier Rayssac , Pierre Rayssac , Gisele Rayssac
IPC分类号： H01L21/20
CPC分类号： H01L21/76254 , C30B25/18 , C30B33/00 , H01L21/2007
摘要： A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving support and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition.
摘要翻译：一种用于制造用于光学，电子或光电子的基板的方法。该方法可以包括将种子层转移到接收支撑体上并将有用的层沉积到种子层上。接收支撑件的热膨胀系数可以与有用层的热膨胀系数相同或略大，并且种子层的热膨胀系数可以基本上等于接收支撑件的热膨胀系数。优选地，成核层和中间载体具有基本上相同的化学组成。

13. 发明授权

US07288430B2 Method of fabricating heteroepitaxial microstructures 失效
标题翻译：制造异质外延微结构的方法
公开(公告)号：US07288430B2
公开(公告)日：2007-10-30
申请号：US11165895
申请日：2005-06-24
申请人： Bruce Faure , Fabrice Letertre , Bruno Ghyselen
发明人： Bruce Faure , Fabrice Letertre , Bruno Ghyselen
IPC分类号： H01L21/00
CPC分类号： C30B25/183 , C30B33/00 , H01L21/76254
摘要： An efficient method of fabricating a high-quality heteroepitaxial microstructure having a smooth surface. The method includes detaching a layer from a base structure to provide a carrier substrate having a detached surface, and then forming a heteroepitaxial microstructure on the detached surface of the carrier substrate by depositing an epitaxial layer on the detached surface of a carrier substrate. Also included is a heteroepitaxial microstructure fabricated from such method.
摘要翻译：制造具有光滑表面的高品质异质外延微结构的有效方法。该方法包括从基底结构分离层以提供具有分离表面的载体基底，然后通过在载体基底的分离表面上沉积外延层而在载体基底的分离表面上形成异质外延微结构。还包括由这种方法制造的异质外延微结构。

14. 发明授权

US07279779B2 Substrate assembly for stressed systems 有权
标题翻译：用于应力系统的基板组件
公开(公告)号：US07279779B2
公开(公告)日：2007-10-09
申请号：US11411833
申请日：2006-04-27
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
IPC分类号： H01L23/13
CPC分类号： H01L21/2007 , H01L21/76251 , H01L21/76254
摘要： A substrate-assembly having a mechanical stress absorption system. The assembly includes two substrates, one of which has a mechanical stress absorbing system, such as a plurality of motifs that absorb thermoelastic stresses, to prevent cracking or destruction of the substrates or separation of one substrate from the other.
摘要翻译：具有机械应力吸收系统的基板组件。该组件包括两个基板，其中一个具有机械应力吸收系统，例如吸收热弹性应力的多个图案，以防止基板的破裂或破坏或将一个基板与另一个基板分开。

15. 发明授权

US07256101B2 Methods for preparing a semiconductor assembly 有权
标题翻译：半导体组件的制备方法
公开(公告)号：US07256101B2
公开(公告)日：2007-08-14
申请号：US10893596
申请日：2004-07-15
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76254 , H01L21/0445 , H01L21/187 , H01L21/7602 , H01L33/0012 , H01L33/0029
摘要： Methods for preparing a semiconductor assembly are disclosed. In an implementation, the technique includes providing a support substrate and a bonding surface thereon, providing a donor substrate having a weakened zone that defines a useful layer and a bonding surface on the useful layer, and providing an interface layer of a predetermined material on the bonding surface of either the support substrate or the useful layer to provide a bonding surface thereon. The method also includes molecularly bonding the bonding surface of the interface layer to the bonding surface of the other of the support substrate or the useful layer to form a separable bonding interface therebetween, and to thus form the semiconductor assembly, and heat treating the semiconductor assembly to a temperature of at least 1000 to 1100° C. without substantially increasing molecular bonding between the bonding surface of the interface layer and the bonding surface of the other of the support substrate or the useful layer, so that the separable bonding interface maintains a sufficiently weak bond that can later be overcome by applying stresses to detach the useful layer from the donor substrate.
摘要翻译：公开了制备半导体组件的方法。在一个实施方案中，该技术包括在其上提供支撑衬底和结合表面，提供施主衬底，其具有限定可用层的弱化区和在有用层上的结合表面，以及在有用层上提供预定材料的界面层粘合表面，以在其上提供粘合表面。该方法还包括将界面层的结合表面分别结合到支撑衬底或有用层中的另一个的接合表面，以在其之间形成可分离的接合界面，从而形成半导体组件，并对半导体组件进行热处理达到至少1000〜1100℃的温度，而不会在界面层的接合面与支撑基板或有用层的另一方的接合面之间基本上增加分子接合，使得可分离的接合界面保持足够的弱键可以随后通过施加应力来克服有用层与施主衬底的分离。

16. 发明申请

US20060216849A1 Substrate for stressed systems and method of making same 失效
公开(公告)号：US20060216849A1
公开(公告)日：2006-09-28
申请号：US11434930
申请日：2006-05-17
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
IPC分类号： H01L21/00 , H01L21/20 , H01L21/30
CPC分类号： H01L21/187 , B81C1/00365 , B81C2201/0191 , C30B25/183 , H01L21/0237 , H01L21/0243 , H01L21/02439 , H01L21/0245 , H01L21/02513 , H01L21/02658 , H01L21/02664 , H01L21/76254
摘要： A stress absorbing microstructure assembly including a support substrate having an accommodation layer that has plurality of motifs engraved or etched in a surface, a buffer layer and a nucleation layer. The stress absorbing microstructure assembly may also include an insulating layer between the buffer layer and the nucleation layer. This assembly can receive thick epitaxial layers thereon with concern of causing cracking of such layers.

17. 发明申请

US20060189095A1 Semiconductor substrates having useful and transfer layers 有权
标题翻译：具有有用和转移层的半导体衬底
公开(公告)号：US20060189095A1
公开(公告)日：2006-08-24
申请号：US11402052
申请日：2006-04-12
申请人： Bruno Ghyselen , Fabrice Letertre
发明人： Bruno Ghyselen , Fabrice Letertre
IPC分类号： H01L21/30 , H01L21/425
CPC分类号： H01L21/3148 , H01L21/318 , H01L21/76254 , H01L29/1608 , H01L29/165 , H01L29/2003 , H01L29/267 , Y10T428/24479
摘要： Methods for fabricating final substrates for use in optics, electronics, or optoelectronics are described. The method includes forming a zone of weakness beneath a surface of a source substrate to define a transfer layer; detaching the transfer layer from the source substrate along the zone of weakness; depositing a useful layer upon the transfer layer; and depositing a support material on the useful layer to form the final substrate. The useful layer may be deposited on the transfer layer before or after detaching the transfer layer from the source substrate. The useful layer is typically made of a material having a large band gap, and comprises at least one of gallium nitride, or aluminum nitride, or of compounds of at least two elements including at least one element of aluminum, indium, and gallium. The zone of weakness may advantageously be formed by implanting atomic species into the source substrate.
摘要翻译：描述了用于制造用于光学，电子学或光电子学的最终衬底的方法。该方法包括在源极衬底的表面下方形成弱化区以限定转移层; 沿着弱化区域将转移层从源底物分离; 在转移层上沉积有用的层; 以及在有用层上沉积支撑材料以形成最终的基底。在从源极衬底分离转移层之前或之后，有用层可以沉积在转移层上。有用层通常由具有大带隙的材料制成，并且包括氮化镓或氮化铝中的至少一种，或包括至少两种元素的化合物，包括至少一种铝，铟和镓元素。可以通过将原子物质注入到源底物中来有利地形成弱点区域。

18. 发明授权

US06964914B2 Method of manufacturing a free-standing substrate made of monocrystalline semi-conductor material 有权
标题翻译：制造由单晶半导体材料制成的独立基板的方法
公开(公告)号：US06964914B2
公开(公告)日：2005-11-15
申请号：US10349295
申请日：2003-01-22
申请人： Bruno Ghyselen , Fabrice Letertre , Carlos Mazure
发明人： Bruno Ghyselen , Fabrice Letertre , Carlos Mazure
IPC分类号： C30B29/38 , C23C16/01 , C23C16/34 , C30B25/02 , C30B29/04 , H01L21/20 , H01L21/762 , H01L21/30 , H01L21/46 , H01L21/76
CPC分类号： H01L21/76254 , Y10S438/977
摘要： A method for manufacturing a free-standing substrate made of a semiconductor material. A first assembly is provided and it includes a relatively thinner nucleation layer of a first material, a support of a second material, and a removable bonding interface defined between facing surfaces of the nucleation layer and support. A substrate of a relatively thicker layer of a third material is grown, by epitaxy on the nucleation layer, to form a second assembly with the substrate attaining a sufficient thickness to be free-standing. The third material is preferably a monocrystalline material. Also, the removable character of the bonding interface is preserved with at least the substrate being heated to an epitaxial growth temperature. The coefficients of thermal expansion of the second and third materials are selected to be different from each other by a thermal expansion differential, determined as a function of the epitaxial growth temperature or subsequent application of external mechanical stresses, such that, as the second assembly cools from the epitaxial growth temperature, stresses are induced in the removable bonding interface to facilitate detachment of the nucleation layer from the substrate.
摘要翻译：一种制造由半导体材料制成的自立式基板的方法。提供了第一组件，并且其包括第一材料的相对更薄的成核层，第二材料的支撑体和限定在成核层和支撑体的相对表面之间的可去除的结合界面。通过在成核层上外延生长相对较厚的第三材料层的衬底，以形成第二组件，其中衬底获得足够的厚度以使其独立。第三种材料优选是单晶材料。而且，至少将衬底加热到外延生长温度来保存接合界面的可去除特性。第二和第三材料的热膨胀系数被选择为相互不同的热膨胀差异，其被确定为外延生长温度的函数或随后的外部机械应力的应用，使得当第二组件冷却时从外延生长温度，在可除去的结合界面中诱发应力以促进成核层与基底的分离。

19. 发明授权

US06867067B2 Methods for fabricating final substrates 有权
标题翻译：制造最终基板的方法
公开(公告)号：US06867067B2
公开(公告)日：2005-03-15
申请号：US10446604
申请日：2003-05-27
申请人： Bruno Ghyselen , Fabrice Letertre
发明人： Bruno Ghyselen , Fabrice Letertre
IPC分类号： H01L27/12 , H01L21/02 , H01L21/762 , H01L29/165 , H01L29/20 , H01L29/24 , H01L29/267 , H01L21/44 , H01L21/30
CPC分类号： H01L21/3148 , H01L21/318 , H01L21/76254 , H01L29/1608 , H01L29/165 , H01L29/2003 , H01L29/267 , Y10T428/24479
摘要： Methods for fabricating final substrates for use in optics, electronics, or optoelectronics are described. In an embodiment, the method includes forming a zone of weakness beneath a surface of a source substrate to define a transfer layer, and forming a first bonding layer on the source substrate surface. A second bonding layer may be formed on a surface of an intermediate support, and the exposed surfaces of the first and second bonding layers joined to form a composite substrate. Next, the source substrate is detached from the composite substrate along the zone of weakness to expose a surface of the transfer layer, and a support material is deposited onto the exposed surface of the transfer layer. The transfer layer and support material are then separated from the composite substrate by elimination of at least the first bonding layer to form the final substrate. The zone of weakness may advantageously be formed by implanting atomic species into the source substrate.
摘要翻译：描述了用于制造用于光学，电子学或光电子学的最终衬底的方法。在一个实施例中，该方法包括在源极衬底的表面下方形成弱化区以限定转移层，以及在源极衬底表面上形成第一结合层。第二接合层可以形成在中间支撑体的表面上，并且第一和第二接合层的暴露表面接合以形成复合衬底。接下来，源极衬底沿着弱化区从复合衬底分离以暴露转移层的表面，并且将载体材料沉积到转印层的暴露表面上。然后通过消除至少第一结合层以形成最终的基底，将转移层和载体材料与复合基材分离。可以通过将原子物质注入到源底物中来有利地形成弱点区域。

20. 发明授权

US06858107B2 Method of fabricating substrates, in particular for optics, electronics or optoelectronics 有权
标题翻译：制造衬底的方法，特别是用于光学，电子学或光电子学
公开(公告)号：US06858107B2
公开(公告)日：2005-02-22
申请号：US10616594
申请日：2003-07-09
申请人： Bruno Ghyselen , Fabrice Letertre
发明人： Bruno Ghyselen , Fabrice Letertre
IPC分类号： C30B33/00 , B32B31/00
CPC分类号： C30B29/06 , C30B29/36 , C30B33/00 , Y10S438/977 , Y10T156/1052 , Y10T156/1059 , Y10T225/12
摘要： A method of fabricating substrates while minimizing loss of starting material of an ingot, wherein a layer is transferred onto a support. The technique includes forming a flat front face on a raw ingot of material, implanting atomic species through the front face to a controlled mean implantation depth to create a zone of weakness that defines a top layer of the ingot, bonding a support to the front face of the ingot, wherein the support has a surface area that is smaller than a surface area of the front face of the ingot, and detaching from the ingot at the zone of weakness that portion of the top layer that is bonded to the support to form the substrate.
摘要翻译：一种制造基板的方法，同时使锭的起始材料的损失最小化，其中将层转移到载体上。该技术包括在原料块上形成平坦的前表面，将原始物质通过前面植入到受控的平均注入深度以产生限定锭的顶层的弱点区域，将支撑件粘合到前表面，其中所述载体具有小于所述锭的前表面的表面积的表面积，以及在所述顶层的与所述载体结合的部分的所述弱化区域处从所述锭脱离形成底物。

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