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11. 发明申请

WO2011043481A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM 审中-公开
标题翻译：图案形成方法，化学放大电阻组合物和电阻膜
公开(公告)号：WO2011043481A1
公开(公告)日：2011-04-14
申请号：PCT/JP2010/067808
申请日：2010-10-05
申请人： FUJIFILM Corporation , ENOMOTO, Yuichiro , KAMIMURA, Sou , TARUTANI, Shinji , KATO, Keita , IWATO, Kaoru
发明人： ENOMOTO, Yuichiro , KAMIMURA, Sou , TARUTANI, Shinji , KATO, Keita , IWATO, Kaoru
IPC分类号： G03F7/038 , C08F220/10 , C08F232/04 , G03F7/004 , G03F7/32 , H01L21/027
CPC分类号： G03F7/0382 , G03F7/0395 , G03F7/0397 , G03F7/2041 , G03F7/30 , G03F7/325 , G03F7/327 , Y10S430/106 , Y10S430/111
摘要： A pattern forming method includes: (i) forming a film from a chemical amplification resist composition; (ii) exposing the film, so as to form an exposed film; and (iii) developing the exposed film by using an organic solvent-containing developer, wherein the chemical amplification resist composition contains: (A) a resin substantially insoluble in alkali; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a crosslinking agent; and (D) a solvent, a negative chemical amplification resist composition used in the method, and a resist film formed from the negative chemical amplification resist composition.
摘要翻译：图案形成方法包括：（i）从化学放大抗蚀剂组合物形成膜; （ii）使膜曝光，形成曝光膜; 和（iii）通过使用含有机溶剂的显影剂显影所述曝光的膜，其中所述化学增幅抗蚀剂组合物包含：（A）基本上不溶于碱的树脂; （B）能够在用光化射线或辐射照射时能产生酸的化合物; （C）交联剂; 和（D）本方法中使用的溶剂，负性化学增幅抗蚀剂组合物和由负极化学增幅抗蚀剂组合物形成的抗蚀剂膜。

12. 发明申请

WO2013002417A1 PATTERN FORMING METHOD, MULTI-LAYERED RESIST PATTERN, MULTI-LAYERED FILM FOR ORGANIC SOLVENT DEVELOPMENT, RESIST COMPOSITION, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE 审中-公开
标题翻译：图案形成方法，多层电阻图案，用于有机溶剂开发的多层膜，电阻组合物，制造电子器件的方法和电子器件
公开(公告)号：WO2013002417A1
公开(公告)日：2013-01-03
申请号：PCT/JP2012/067139
申请日：2012-06-28
申请人： FUJIFILM Corporation , KATO, Keita , SHIRAKAWA, Michihiro , ODANI, Tadahiro , NAKAMURA, Atsushi , TAKAHASHI, Hidenori , IWATO, Kaoru
发明人： KATO, Keita , SHIRAKAWA, Michihiro , ODANI, Tadahiro , NAKAMURA, Atsushi , TAKAHASHI, Hidenori , IWATO, Kaoru
IPC分类号： G03F7/095 , G03F7/038 , G03F7/039 , G03F7/32 , H01L21/027
CPC分类号： G03F7/0007 , G03F7/039 , G03F7/0392 , G03F7/0397 , G03F7/095 , G03F7/11 , G03F7/2041 , G03F7/325
摘要： There is provided a pattern forming method comprising: (i) a step of forming a first film on a substrate by using a first resin composition (I), (ii) a step of forming a second film on the first film by using a second resin composition (II) different from the resin composition (I), (iii) a step of exposing a multi-layered film having the first film and the second film, and (iv) a step of developing the first film and the second film in the exposed multi-layered film by using an organic solvent-containing developer to form a negative pattern.
摘要翻译：提供一种图案形成方法，包括：（i）通过使用第一树脂组合物（I）在基材上形成第一膜的步骤，（ii）通过使用第二树脂在第一膜上形成第二膜的步骤不同于树脂组合物（I）的树脂组合物（II），（iii）暴露具有第一膜和第二膜的多层膜的步骤，以及（iv）使第一膜和第二膜显影的步骤在曝光的多层膜中，通过使用含有机溶剂的显影剂形成负图案。

13. 发明申请

WO2013047396A1 PATTERN FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET-SENSITIVE COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE 审中-公开
标题翻译：图案形成方法，电子束敏感或极端超敏感组合物，耐蚀膜，使用其制造电子器件的方法和电子器件
公开(公告)号：WO2013047396A1
公开(公告)日：2013-04-04
申请号：PCT/JP2012/074315
申请日：2012-09-14
申请人： FUJIFILM Corporation , TAKIZAWA, Hiroo , IWATO, Kaoru , TSUBAKI, Hideaki
发明人： TAKIZAWA, Hiroo , IWATO, Kaoru , TSUBAKI, Hideaki
IPC分类号： G03F7/038 , G03F7/004 , G03F7/039 , G03F7/32 , H01L21/027
CPC分类号： G03F7/0388 , G03F7/0045 , G03F7/0046 , G03F7/038 , G03F7/0392 , G03F7/0397 , G03F7/11 , G03F7/2041 , G03F7/325 , G03F7/405
摘要： There is provided a pattern forming method comprising (1) a step of forming a film by using an electron beam-sensitive or extreme ultraviolet-sensitive resin composition, (2) a step of exposing the film by using an electron beam or an extreme ultraviolet ray, and (3) a step of developing the exposed film by using an organic solvent-containing developer, wherein the electron beam-sensitive or extreme ultraviolet-sensitive resin composition contains (A) a resin containing (R) a repeating unit having a structural moiety capable of decomposing upon irradiation with an electron beam or an extreme ultraviolet ray to generate an acid, and (B) a solvent.
摘要翻译：提供一种图案形成方法，其包括（1）通过使用电子束敏感或极紫外线敏感性树脂组合物形成膜的步骤，（2）通过使用电子束或极紫外线曝光该膜的步骤（3）通过使用含有机溶剂的显影剂显影曝光膜的步骤，其中电子束敏感性或极紫外线敏感性树脂组合物含有（A）含有（R）重复单元的树脂，其具有结构部分能够在用电子束或极紫外线照射时分解以产生酸，和（B）溶剂。

14. 发明申请

WO2010035908A1 PATTERN FORMING METHOD 审中-公开
标题翻译：图案形成方法
公开(公告)号：WO2010035908A1
公开(公告)日：2010-04-01
申请号：PCT/JP2009/067300
申请日：2009-09-29
申请人： FUJIFILM Corporation , KATO, Takayuki , TAKAHASHI, Hyou , IWATO, Kaoru
发明人： KATO, Takayuki , TAKAHASHI, Hyou , IWATO, Kaoru
IPC分类号： G03F7/40 , C08F20/28 , C08F20/34 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0397 , C08F220/28 , G03F7/0046 , G03F7/2041 , G03F7/40
摘要： A pattern forming method, includes: a step of forming a resist film by using a photosensitive composition containing (A) a resin having a repeating unit represented by formula (1) as defined in the specification and being capable of increasing a solubility of the resin (A) in an alkali developer by an action of an acid; a step of exposing the resist film so as to form an exposed resist film; a post-exposure heating step of heating the exposed resist film; a developing step of developing the resist film after the post-exposure heating step so as to form a developed resist film; and a post-baking step of heating the developed resist film, wherein the post-baking in the post-baking step is performed by setting a heating temperature to a temperature not lower than [a glass transition temperature (Tg) of the resin (A) - 20°C].
摘要翻译：图案形成方法包括：通过使用含有（A）具有本说明书中定义的由式（1）表示的重复单元的树脂并且能够增加树脂的溶解度的光敏组合物形成抗蚀剂膜的步骤（A）通过酸的作用在碱性显影剂中; 曝光抗蚀剂膜以形成曝光的抗蚀剂膜的步骤; 曝光后加热步骤，加热曝光的抗蚀剂膜; 显影步骤，在后曝光加热步骤之后显影抗蚀剂膜以形成显影的抗蚀剂膜; 以及加热显影的抗蚀剂膜的后烘烤步骤，其中后烘烤步骤中的后烘烤通过将加热温度设定为不低于[玻璃化转变温度（Tg）的树脂（A ） - 20℃]。

15. 发明申请

WO2012002519A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM 审中-公开
标题翻译：图案形成方法，化学放大电阻组合物和电阻膜
公开(公告)号：WO2012002519A1
公开(公告)日：2012-01-05
申请号：PCT/JP2011/065131
申请日：2011-06-24
申请人： FUJIFILM Corporation , IWATO, Kaoru , KATAOKA, Shohei
发明人： IWATO, Kaoru , KATAOKA, Shohei
IPC分类号： G03F7/039 , G03F7/038 , G03F7/32 , H01L21/027
CPC分类号： G03F7/0046 , G03F7/0397 , G03F7/2041 , G03F7/325 , Y10S430/108
摘要： A pattern forming method, includes: (i) forming a film from a chemical amplification resist composition that contains (A) a resin capable of increasing a polarity of the resin (A) to decrease a solubility of the resin (A) for a developer containing an organic solvent by an action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent; (ii) exposing the film; and (iii) performing development by using a developer containing an organic solvent, wherein the resin (A) has a structure in which a polar group is protected with a leaving group capable of decomposing and leaving by an action of an acid, and the leaving group contains a fluorine atom.
摘要翻译：图案形成方法包括：（i）从化学增幅抗蚀剂组合物形成膜，所述化学增幅抗蚀剂组合物含有（A）能提高树脂（A）的极性的树脂，以降低树脂（A）对显色剂的溶解度通过酸的作用含有有机溶剂，（B）在用光化射线或辐射照射时能够产生酸的化合物和（C）溶剂; （ii）曝光胶片; 和（iii）通过使用包含有机溶剂的显影剂进行显影，其中树脂（A）具有极性基团被离去基团保护的结构，其能够通过酸的作用分解和离开，并且离开基团含有氟原子。

16. 发明申请

WO2010114176A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION 审中-公开
标题翻译：化学敏感性或辐射敏感性树脂组合物和耐蚀膜和使用组合物的图案形成方法
公开(公告)号：WO2010114176A1
公开(公告)日：2010-10-07
申请号：PCT/JP2010/056290
申请日：2010-03-31
申请人： FUJIFILM Corporation , YOSHIDOME, Masahiro , HIRANO, Shuji , SAEGUSA, Hiroshi , IWATO, Kaoru , IIZUKA, Yusuke
发明人： YOSHIDOME, Masahiro , HIRANO, Shuji , SAEGUSA, Hiroshi , IWATO, Kaoru , IIZUKA, Yusuke
IPC分类号： G03F7/039
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/0758 , G03F7/2041 , G03F7/38 , Y10S430/108 , Y10S430/111
摘要： Provided is an actinic ray-sensitive or radiation-sensitive resin composition including: (A) a resin capable of increasing the solubility in an alkali developer by the action of an acid, the resin containing (a) a repeating unit represented by the following formula (AN-01), (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a resin that contains at least either a fluorine atom or a silicon atom and contains a repeating unit having a group capable of decomposing by the action of an alkali developer to increase the solubility in an alkali developer: wherein the variables in formula (AN-01) are defined in the description.
摘要翻译：本发明提供一种光化学射线敏感性或辐射敏感性树脂组合物，其包含：（A）能够通过酸作用增加在碱性显影剂中的溶解性的树脂，所述树脂含有（a）由下式表示的重复单元（AN-01），（B）能够在用光化射线或辐射照射时能够产生酸的化合物，和（C）含有至少一个氟原子或硅原子的树脂，并且含有具有能够通过碱显影剂的作用分解以提高在碱性显影剂中的溶解度的组：其中式（AN-01）中的变量在说明书中定义。

17. 发明申请

WO2010114158A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME 审中-公开
标题翻译：化学敏感性或辐射敏感性树脂组合物和使用其的图案形成方法
公开(公告)号：WO2010114158A1
公开(公告)日：2010-10-07
申请号：PCT/JP2010/056138
申请日：2010-03-30
申请人： FUJIFILM Corporation , KATO, Takayuki , SAEGUSA, Hiroshi , IWATO, Kaoru , HIRANO, Shuji , IIZUKA, Yusuke , YAMAGUCHI, Shuhei , SHIBUYA, Akinori
发明人： KATO, Takayuki , SAEGUSA, Hiroshi , IWATO, Kaoru , HIRANO, Shuji , IIZUKA, Yusuke , YAMAGUCHI, Shuhei , SHIBUYA, Akinori
IPC分类号： G03F7/039 , G03F7/004 , G03F7/075 , H01L21/027
CPC分类号： G03F7/0046 , G03F7/0397 , G03F7/0758 , G03F7/2041
摘要： An actinic ray-sensitive or radiation-sensitive resin composition, wherein when a film having a film thickness of 100 nm is formed from the actinic ray-sensitive or radiation-sensitive resin composition, the film has a transmittance of 55 to 80% for light at a wavelength of 193 nm, and a pattern forming method using the composition are provided.
摘要翻译：光化射线敏感或辐射敏感性树脂组合物，其中当由光化射线敏感或辐射敏感性树脂组合物形成膜厚度为100nm的膜时，该膜对于光线具有55至80％的透射率在193nm的波长下，提供使用该组合物的图案形成方法。

18. 发明申请

WO2010067905A2 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME 审中-公开
标题翻译：化学敏感性或辐射敏感性树脂组合物和使用其的图案形成方法
公开(公告)号：WO2010067905A2
公开(公告)日：2010-06-17
申请号：PCT/JP2009/071189
申请日：2009-12-11
申请人： FUJIFILM Corporation , HIRANO, Shuji , IWATO, Kaoru , SAEGUSA, Hiroshi , IIZUKA, Yusuke
发明人： HIRANO, Shuji , IWATO, Kaoru , SAEGUSA, Hiroshi , IIZUKA, Yusuke
IPC分类号： G03F7/004 , G03F7/039 , G03F7/075 , G03F7/20
CPC分类号： C07D307/93 , C07D407/12 , C07D493/08 , C07D493/18 , C07D495/18 , C08F24/00 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： An actinic ray-sensitive or radiation-sensitive resin composition, includes: (A) a resin capable of increasing the solubility of the resin (A) in an alkali developer by the action of an acid; and (C) a resin having at least either a fluorine atom or a silicon atom and containing (c) a repeating unit having at least two or more polarity conversion groups.
摘要翻译：光化射线敏感或辐射敏感性树脂组合物包括：（A）能够通过酸的作用增加树脂（A）在碱性显影剂中的溶解度的树脂; 和（C）至少具有氟原子或硅原子的树脂，并含有（c）具有至少两个以上极性转换基团的重复单元。

19. 发明申请

WO2010067898A2 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE COMPOSITION 审中-公开
标题翻译：化学敏感性或辐射敏感性树脂组合物和使用组合物的图案形成方法
公开(公告)号：WO2010067898A2
公开(公告)日：2010-06-17
申请号：PCT/JP2009/071068
申请日：2009-12-11
申请人： FUJIFILM Corporation , SAEGUSA, Hiroshi , IWATO, Kaoru , HIRANO, Shuji , IIZUKA, Yusuke
发明人： SAEGUSA, Hiroshi , IWATO, Kaoru , HIRANO, Shuji , IIZUKA, Yusuke
IPC分类号： G03F7/004 , G03F7/039 , G03F7/075 , G03F7/20
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , G03F7/0758 , G03F7/2041
摘要： Provided is an actinic ray-sensitive or radiation-sensitive resin composition including: (A) a resin capable of increasing the solubility in an alkali developer by the action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a resin which contains (c) a repeating unit having at least one polarity conversion group and has at least either a fluorine atom or a silicon atom.
摘要翻译：本发明提供一种光化学射线敏感性或辐射敏感性树脂组合物，其包含：（A）能够通过酸的作用增加在碱性显影剂中的溶解度的树脂，（B）在照射时能够产生酸的化合物光化射线或辐射，以及（C）含有（c）具有至少一个极性转换基并且至少具有氟原子或硅原子的重复单元的树脂。

20. 发明申请

WO2014017268A1 RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME 审中-公开
标题翻译：树脂组合物和使用其的图案形成方法
公开(公告)号：WO2014017268A1
公开(公告)日：2014-01-30
申请号：PCT/JP2013/068303
申请日：2013-06-26
申请人： FUJIFILM CORPORATION
发明人： TSURUTA, Takuya , TSUCHIMURA, Tomotaka , IWATO, Kaoru
IPC分类号： C08F12/22 , C08F20/30 , G03F7/038 , G03F7/039 , H01L21/027
CPC分类号： C08F12/24 , C08F8/02 , C08F12/32 , C08F212/14 , G03F7/004 , G03F7/0045 , G03F7/0382 , G03F7/0388 , G03F7/0392 , G03F7/20 , C08F212/32 , C08F212/08 , C08F220/32 , C08F220/36
摘要： A resin composition of the present invention includes a polymer compound (A) containing a repeating unit (Q) represented by the following general formula (1): wherein R 1 represents a hydrogen atom, a methyl group, or a halogen atom; R 2 and R 3 represent a hydrogen atom, an alkyl group, or a cycloalkyl group; L represents a divalent linking group or a single bond; Y represents a substituent excluding a methylol group; Z represents a hydrogen atom or a substituent; m represents an integer of 0 to 4; n represents an integer of 1 to 5; and m+n is 5 or less.
摘要翻译：本发明的树脂组合物包含含有下述通式（1）表示的重复单元（Q）的高分子化合物（A）：其中，R1表示氢原子，甲基或卤素原子; R2和R3表示氢原子，烷基或环烷基; L表示二价连接基团或单键; Y表示除羟甲基之外的取代基; Z表示氢原子或取代基; m表示0〜4的整数， n表示1〜5的整数， m + n为5以下。

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