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11. 发明申请

US20090146238A1 CMOS-BASED PLANAR TYPE SILICON AVALANCHE PHOTO DIODE USING SILICON EPITAXIAL LAYER AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：使用硅外延层的基于CMOS的平面型硅氧化物照相二极管及其制造方法
公开(公告)号：US20090146238A1
公开(公告)日：2009-06-11
申请号：US12195166
申请日：2008-08-20
申请人： Yong Sun Yoon , Kun Sik Park , Jong Moon Park , Bo Woo Kim , Jin Yeong Kang
发明人： Yong Sun Yoon , Kun Sik Park , Jong Moon Park , Bo Woo Kim , Jin Yeong Kang
IPC分类号： H01L31/103 , H01L31/18
CPC分类号： H01L31/107
摘要： A complementary metal-oxide semiconductor (CMOS)-based planar type avalanche photo diode (APD) using a silicon epitaxial layer and a method of manufacturing the APD, the photo diode including: a substrate; a well layer of a first conductivity type formed in the substrate; an avalanche embedded junction formed in the well layer of the first conductivity type by low energy ion implantation; the silicon epitaxial layer formed in the avalanche embedded junction; a doping area of a second conductivity type opposite to the first conductive type, formed from a portion of a surface of the well layer of the first conductivity type in the avalanche embedded junction and forming a p-n junction; positive and negative electrodes formed on the doping area of the second conductivity type and the well layer of the first conductivity type separated from the doping area of the second conductivity type, respectively; and an oxide layer formed on an overall surface excluding a window where the positive and negative electrodes are formed.
摘要翻译：使用硅外延层的基于互补金属氧化物半导体（CMOS）的平面型雪崩光电二极管（APD）和制造该APD的方法，所述光电二极管包括：衬底; 在衬底中形成的第一导电类型的阱层; 通过低能离子注入形成在第一导电类型的阱层中的雪崩嵌入结; 形成在雪崩嵌入结的硅外延层; 由所述第一导电类型的阱层的表面的一部分形成在所述雪崩嵌入结中并形成p-n结的与所述第一导电类型相反的第二导电类型的掺杂区域; 分别形成在第二导电类型的掺杂区域上的正极和负极以及从第二导电类型的掺杂区域分离的第一导电类型的阱层; 以及形成在除了形成正极和负极的窗口之外的整个表面上的氧化物层。

12. 发明授权

US6048756A Method for making a silicon-on-insulator MOS transistor using a selective SiGe epitaxy 失效
标题翻译：使用选择性SiGe外延制造绝缘体上硅MOS晶体管的方法
公开(公告)号：US6048756A
公开(公告)日：2000-04-11
申请号：US104203
申请日：1998-06-25
申请人： Jong Ho Lee , Jong Son Lyu , Bo Woo Kim
发明人： Jong Ho Lee , Jong Son Lyu , Bo Woo Kim
IPC分类号： H01L21/20 , H01L21/336 , H01L29/417 , H01L29/786 , H01L21/00 , H01L21/3205 , H01L21/8234
CPC分类号： H01L29/66477 , H01L21/02381 , H01L21/02532 , H01L21/02639 , H01L29/41733 , H01L29/66636 , H01L29/66772 , H01L29/78618 , H01L29/78654 , H01L29/78684
摘要： Disclosed is a method for manufacturing a metal-oxide-semiconductor (MOS) device formed in an epitaxial silicon layer on insulator substrate comprising the steps of forming a field oxide layer defined an active region of the MOS device in the silicon layer and forming a gate oxide on the silicon layer; forming a gate electrode on the gate oxide, and self-aligned implanting a dopant of low concentration to form a lightly doped drain region; forming an oxide spacer in both sides of the gate electrode; growing a SiGe epitaxial layer having a lower bandgap than the silicon layer on the portion of the exposed silicon layer; and implanting a dopant of high concentration over the SiGe epitaxial layer to form a highly doped source/drain region. This invention can easily manufacture an SOI MOS device having a low source/drain series resistance and a high breakdown voltage without additional complex processes.
摘要翻译：公开了一种用于制造在绝缘体衬底上的外延硅层中形成的金属氧化物半导体（MOS）器件的方法，包括以下步骤：在硅层中形成限定MOS器件的有源区的场氧化物层，并形成栅极硅层上的氧化物; 在所述栅极氧化物上形成栅电极，以及自对准地注入低浓度的掺杂剂以形成轻掺杂漏极区; 在栅电极的两侧形成氧化物间隔物; 生长具有比暴露的硅层的部分上的硅层更低的带隙的SiGe外延层; 以及在SiGe外延层上注入高浓度的掺杂剂以形成高度掺杂的源/漏区。本发明可以容易地制造具有低源/漏串联电阻和高击穿电压的SOI MOS器件，而无需额外的复杂工艺。

13. 发明授权

US07170044B2 Semiconductor photodetector for detecting light having a wavelength in the ultraviolet blue ranges 失效
标题翻译：用于检测具有紫外线蓝色波长的光的半导体光检测器
公开(公告)号：US07170044B2
公开(公告)日：2007-01-30
申请号：US10913398
申请日：2004-08-09
申请人： Kun Sik Pakr , Seong Wook Yoo , Jong Moon Park , Yong Sun Yoon , Sang Gi Kim , Bo Woo Kim , Yoon Kyu Bae , Byung Won Lim , Jin Gun Koo
发明人： Kun Sik Pakr , Seong Wook Yoo , Jong Moon Park , Yong Sun Yoon , Sang Gi Kim , Bo Woo Kim , Yoon Kyu Bae , Byung Won Lim , Jin Gun Koo
IPC分类号： H01J40/14
CPC分类号： H01L31/02161 , H01L31/02019 , H01L31/022408
摘要： Provided is a photodetector in which a transparent nonconductive material having an interface charge and a trapped charge is deposited on a semiconductor surface so as to form a depletion region on the surface of the semiconductor, and the depletion region is employed as an optical detecting region, thereby not only improving detection with respect to light having a wavelength of ultraviolet and blue ranges but also filtering light having a wavelength of visible and infrared ranges, and in which a fabricating process thereof is compatible with a universal silicon CMOS process.
摘要翻译：提供了一种光电检测器，其中具有界面电荷和俘获电荷的透明非导电材料沉积在半导体表面上，以在半导体的表面上形成耗尽区，并且耗尽区被用作光学检测区域，从而不仅能够提高对具有紫外线和蓝色范围的波长的光的检测，而且可以改善具有可见光和红外范围的波长的滤光，并且其制造方法与通用硅CMOS工艺相兼容。

14. 发明授权

US6084656A Programmable mask for exposure apparatus 有权
标题翻译：曝光设备可编程掩模
公开(公告)号：US6084656A
公开(公告)日：2000-07-04
申请号：US141554
申请日：1998-08-28
申请人： Chang Auck Choi , Jong Hyun Lee , Won Ick Jang , Yong Il Lee , Jong Tae Baek , Bo Woo Kim
发明人： Chang Auck Choi , Jong Hyun Lee , Won Ick Jang , Yong Il Lee , Jong Tae Baek , Bo Woo Kim
IPC分类号： G03F7/20 , G03B27/72 , G03B27/42 , G03F9/00
CPC分类号： G03F7/70291
摘要： This invention discloses a programmable mask for exposure apparatus which is formed by an integrated pixels of a micro-devices which shut or open a light by an electrical signal. This invention provides a photolithography method by projecting on a silicon wafer a directly designed circuit pattern which is made on a programmable mask fabricated by an integration of many a micro optical shutter devices as a pixels.
摘要翻译：本发明公开了一种曝光装置的可编程掩模，其由通过电信号关闭或打开光的微器件的集成像素形成。本发明提供了一种通过在硅晶片上投影直接设计的电路图案的光刻方法，该电路图案是通过将许多微型光学快门器件集成为像素而制造的可编程掩模上制成的。

15. 发明授权

US6057970A Apparatus for enhancing depth of focus using birefringent material 有权
标题翻译：使用双折射材料增强聚焦深度的装置
公开(公告)号：US6057970A
公开(公告)日：2000-05-02
申请号：US161426
申请日：1998-09-24
申请人： Doh Hoon Kim , Kag Hyeon Lee , Sang Soo Choi , Hai Bin Chung , Bo Woo Kim
发明人： Doh Hoon Kim , Kag Hyeon Lee , Sang Soo Choi , Hai Bin Chung , Bo Woo Kim
IPC分类号： H01L21/027 , G02B5/30 , G03F7/20 , G02B3/10 , G03F9/00 , G21K5/10
CPC分类号： G02B27/0075 , G02B5/3083 , G03F7/70216
摘要： The present invention relates to an apparatus for forming fine patterns in semiconductor devices, display devices and micro-electro-mechanical systems and more particularly to an image projecting system using an optical component, which is made of birefringent material, in the lithography techniques. The lithography apparatus according to the present invention comprises an optical lens system in which an image of a photomask is transferred to an object by a light source, wherein said optical lens system comprises a plurality of isotropic optical unit and at least one birefringent optical unit, said birefringent optical unit including at least one of said birefringent optical components.
摘要翻译：本发明涉及一种用于在半导体器件，显示器件和微电子机械系统中形成精细图案的装置，更具体地涉及在光刻技术中使用由双折射材料制成的光学部件的图像投影系统。根据本发明的光刻设备包括其中通过光源将光掩模的图像转印到物体的光学透镜系统，其中所述光学透镜系统包括多个各向同性光学单元和至少一个双折射光学单元，所述双折射光学单元包括所述双折射光学部件中的至少一个。

16. 发明授权

US07855366B2 Bipolar junction transistor-based uncooled infrared sensor and manufacturing method thereof 有权
标题翻译：双极结晶体管型非制冷红外传感器及其制造方法
公开(公告)号：US07855366B2
公开(公告)日：2010-12-21
申请号：US12111830
申请日：2008-04-29
申请人： Kun Sik Park , Yong Sun Yoon , Bo Woo Kim , Jin Yeong Kang , Jong Moon Park , Seong Wook Yoo
发明人： Kun Sik Park , Yong Sun Yoon , Bo Woo Kim , Jin Yeong Kang , Jong Moon Park , Seong Wook Yoo
IPC分类号： G01J5/20
CPC分类号： G01J5/20 , H01L21/762 , H01L27/1203
摘要： A BJT (bipolar junction transistor)-based uncooled IR sensor and a manufacturing method thereof are provided. The BJT-based uncooled IR sensor includes: a substrate; at least one BJT which is formed to be floated apart from the substrate; and a heat absorption layer which is formed on an upper surface of the at least one BJT, wherein the BJT changes an output value according heat absorbed through the heat absorption layer. Accordingly, it is possible to provide a BJT-based uncooled IR sensor capable of being implemented through a CMOS compatible process and obtaining more excellent temperature change detection characteristics.
摘要翻译：提供了一种基于BJT（双极结型晶体管）的非制冷IR传感器及其制造方法。基于BJT的非制冷红外传感器包括：基板; 至少一个BJT，其形成为与衬底分开浮动; 以及形成在所述至少一个BJT的上表面上的吸热层，其中所述BJT根据通过所述吸热层吸收的热量来改变输出值。因此，可以提供能够通过CMOS兼容工艺实现的BJT系非冷却IR传感器，并获得更优异的温度变化检测特性。

17. 发明申请

US20060079030A1 Method of fabricating T-type gate 失效
公开(公告)号：US20060079030A1
公开(公告)日：2006-04-13
申请号：US11179983
申请日：2005-07-12
申请人： Jong Moon Park , Kun Sik Park , Seong Wook Yoo , Yong Sun Yoon , Sang Gi Kim , Yoon Kyu Bae , Byung Won Lim , Jin Gun Koo , Bo Woo Kim
发明人： Jong Moon Park , Kun Sik Park , Seong Wook Yoo , Yong Sun Yoon , Sang Gi Kim , Yoon Kyu Bae , Byung Won Lim , Jin Gun Koo , Bo Woo Kim
IPC分类号： H01L21/8232 , H01L21/338
CPC分类号： H01L21/28587
摘要： Provided is a method of fabricating a T-type gate including the steps of: forming a first photoresist layer, a blocking layer and a second photoresist layer to a predetermined thickness on a substrate, respectively; forming a body pattern of a T-type gate on the second photoresist layer and the blocking layer; exposing a predetermined portion of the second photoresist layer to form a head pattern of the T-type gate, and performing a heat treatment process to generate cross linking at a predetermined region of the second photoresist layer except for the head pattern of the T-type gate; performing an exposure process on an entire surface of the resultant structure, and then removing the exposed portion; and forming a metal layer of a predetermined thickness on an entire surface of the resultant structure, and then removing the first photoresist layer, the blocking layer, the predetermined region of the second photoresist layer in which the cross linking are generated, and the metal layer, whereby it is possible to readily perform a compound semiconductor device manufacturing process, and to reduce manufacturing cost by means of the increase of manufacturing yield and the simplification of manufacturing processes.

18. 发明授权

US6093599A Method of manufacturing inductor device on a silicon substrate thereof 有权
标题翻译：在其硅衬底上制造电感器件的方法
公开(公告)号：US6093599A
公开(公告)日：2000-07-25
申请号：US232691
申请日：1999-01-19
申请人： Jin Hyo Lee , Heung Soo Rhee , Hyun Kyu Yu , Bo Woo Kim , Kee Soo Nam
发明人： Jin Hyo Lee , Heung Soo Rhee , Hyun Kyu Yu , Bo Woo Kim , Kee Soo Nam
IPC分类号： H01L21/76 , H01L21/763 , H01L21/822 , H01L27/04 , H01L27/08 , H01L21/8234
CPC分类号： H01L21/763 , H01L27/08
摘要： The present invention relates to a on silicon substrate, specifically to an inductor device and manufacturing method thereof for enhancing the quality factor of the inductor by disposing trenches on a silicon substratre, and by filling the inside of the trenches with polycrystalline polysilicon not doped with impurities. The present invention provides an inductor device and a manufacturing method thereof which can improve the quality factor by increasing resistance of the substrate by forming deep trenches disposed in specific patterns on a low-resistance silicon substrate and filling polycrystalline silicon not doped with impurities, and by reducing parasitic capacitance between the inductor and the silicon substrate.
摘要翻译：本发明涉及一种硅衬底，具体涉及一种电感器件及其制造方法，用于通过在硅衬底上设置沟槽来提高电感器的品质因数，并且通过用不掺杂杂质的多晶多晶硅填充沟槽内部。本发明提供一种电感器件及其制造方法，其可以通过在低电阻硅衬底上形成以特定图案设置的深沟槽并填充未掺杂杂质的多晶硅，并且通过降低电感器和硅衬底之间的寄生电容。

19. 发明授权

US5878105A X-ray mask 失效
标题翻译： X光掩模
公开(公告)号：US5878105A
公开(公告)日：1999-03-02
申请号：US915833
申请日：1997-08-21
申请人： Young Jin Jeon , Jin Man Jung , Sang Soo Choi , Bo Woo Kim , Hyung Joun Yoo
发明人： Young Jin Jeon , Jin Man Jung , Sang Soo Choi , Bo Woo Kim , Hyung Joun Yoo
IPC分类号： H01L21/027 , G03F1/22 , G03F7/20 , G21K5/08 , G21K5/00
CPC分类号： G03F1/22 , G03F7/707 , G03F7/70866 , G21K5/08
摘要： An X-ray mask, which is used in transferring an image formed on a patterned mask to a wafer by exposing the mask with an X-ray, comprises a supplementary substrate attached to the back side of a support ring for preventing a thermal distortion of the X-ray mask due to the difference of thermal coefficient of expansion between a mask substrate and the support ring and for improving the resistance to the external mechanical stress, the supplementary substrate being made of the same material as the mask substrate and obtained through the same processing steps as the mask substrate.
摘要翻译：用于通过用X射线曝光掩模来将形成在图案化掩模上的图像转印到晶片上的X射线掩模包括附着到支撑环背面的补充基板，用于防止热变形 X射线掩模由于掩模基板和支撑环之间的热膨胀系数的差异，并且为了提高对外部机械应力的抵抗力，辅助基板由与掩模基板相同的材料制成，并且通过与掩模基板相同的处理步骤。

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