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    • 13. 发明申请
    • Chemically amplified photoresists and related methods
    • 化学放大光刻胶及相关方法
    • US20060147835A1
    • 2006-07-06
    • US11293125
    • 2005-12-05
    • Sook LeeMin-jeong OhSuk-joo Lee
    • Sook LeeMin-jeong OhSuk-joo Lee
    • G03C1/76
    • G03F7/0392G03F7/0045G03F7/38
    • A chemically-amplified photoresist composition includes a polymer resin, a photo acid generator (PAG), and a thermal acid generator (TAG), where a thermal deprotection temperature of the polymer resin is greater than an acid generation temperature of the TAG. The photoresist composition may be utilized in a photolithography process which includes subjecting a layer of the photoresist composition to photon exposure which causes the PAG to decompose into acid, subjecting the photon-exposed layer of the photo resist composition to a heat treatment which causes the TAG to decompose into acid, and subjecting the heat-treated layer of photoreist composition to a post-exposure bake (PEB) at a temperature which is greater than the temperature of the heat treatment.
    • 化学增幅光致抗蚀剂组合物包括聚合物树脂,光酸产生剂(PAG)和热酸产生剂(TAG),其中聚合物树脂的热去保护温度大于TAG的酸生成温度。 光致抗蚀剂组合物可以用于光刻工艺中,该方法包括使光致抗蚀剂组合物的一层经受光子曝光,导致PAG分解成酸,将光致抗蚀剂组合物的光子曝光层进行热处理,这导致TAG 分解成酸,并将光热组合物的热处理层在大于热处理温度的温度下经受曝光后烘烤(PEB)。