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11. 发明申请

US20070216985A1 Optically addressed spatial light modulator and method 有权
标题翻译：光学寻址空间光调制器和方法
公开(公告)号：US20070216985A1
公开(公告)日：2007-09-20
申请号：US11713773
申请日：2007-03-02
申请人： Jerry Woodall , Jonathan Sachs
发明人： Jerry Woodall , Jonathan Sachs
IPC分类号： G02B26/00 , B32B9/04
CPC分类号： G02F1/135 , G02B27/1026 , G02B27/1033 , G02B27/141 , G02B27/145 , G02B27/149 , G02F1/0126 , G02F1/133553 , G02F1/1354 , H04N9/3105 , H04N9/312 , H04N9/3167 , Y10T428/31504
摘要： An optical device has an electrically insulating first barrier layer disposed over a first electrode layer, a photoconductive layer disposed over the first barrier layer, and a carrier confining layer disposed over the photoconducting layer. The carrier confining layer defines a volume throughout which a plurality of carrier traps are dispersed. Further, an electrically insulating second barrier layer is disposed over the carrier confining layer, a light blocking layer is disposed over the second barrier layer for blocking light of a selected wavelength band. A reflective layer is disposed over the light blocking layer for reflecting light within the selected wavelength band, a birefringent or dispersive layer is disposed over the reflective layer, and an optically transmissive second electrode layer is disposed over the birefringent or dispersive layer. A method is also disclosed, as are additional layers intervening between those detailed above.
摘要翻译：光学器件具有设置在第一电极层上的电绝缘的第一阻挡层，设置在第一阻挡层上的光电导层和设置在光导层上的载流子限制层。载体限制层限定了多个载体陷阱分散在其中的体积。此外，电绝缘的第二阻挡层设置在载体限制层的上方，遮光层设置在第二阻挡层上，用于阻挡所选波长带的光。反射层设置在遮光层上，用于反射所选波长带内的光，双折射或色散层设置在反射层上，并且透光的第二电极层设置在双折射或色散层上。还公开了一种方法，以及介于上述细节之间的附加层也是如此。

12. 发明申请

US20080063597A1 Power Generation From Solid Aluminum 有权
标题翻译：固体铝发电
公开(公告)号：US20080063597A1
公开(公告)日：2008-03-13
申请号：US11850457
申请日：2007-09-05
申请人： Jerry Woodall , Charles Allen , Jeffrey Ziebarth
发明人： Jerry Woodall , Charles Allen , Jeffrey Ziebarth
IPC分类号： C10L5/00 , C01B3/08
CPC分类号： C01B3/08 , C10L5/00 , C22C21/00 , C22C28/00 , Y02E50/30 , Y02E60/36
摘要： A fuel for splitting water into hydrogen and an oxide component comprises a substantially solid pellet formed from a solid-like mixture of a solid-state source material capable of oxidizing in water to form hydrogen and a passivation surface layer of the oxide component, and a passivation preventing agent that is substantially inert to water in an effective amount to prevent passivation of the solid-state material during oxidation. The pellets are brought into contact with an alloy of the passivation preventing agent having a melting point temperature below that of the solid-like mixture to initiate the hydrogen-producing reaction at a lower temperature.
摘要翻译：用于将水分解成氢气和氧化物组分的燃料包括由能够在水中氧化形成氢气的固态源材料的固体状混合物形成的基本上固体的颗粒和氧化物组分的钝化表面层，钝化防止剂，其在有效量下对水基本上是惰性的，以防止在氧化过程中固态材料的钝化。使颗粒与熔点温度低于固体混合物的钝化防止剂的合金接触，以在较低温度下引发产氢反应。

13. 发明申请

US20060237811A1 Non-destructive, in-line characterization of semiconductor materials 审中-公开
标题翻译：半导体材料的非破坏性，在线表征
公开(公告)号：US20060237811A1
公开(公告)日：2006-10-26
申请号：US11271426
申请日：2005-11-10
申请人： Boone Thomas , Hironori Tsukamoto , Jerry Woodall
发明人： Boone Thomas , Hironori Tsukamoto , Jerry Woodall
IPC分类号： H01L31/00
CPC分类号： H01L22/14
摘要： A method for non-destructively determining parameters of a doped semiconductor material involves applying an excitation to a surface of the semiconductor material to photogenerate minority carriers in a region of the semiconductor material, presenting an electric field across the region of the semiconductor material, measuring photoluminescence produced by recombination of the photogenerated minority carriers, and using the photoluminescence measurements to compute one or more parameters of the doped semiconductor material. Excitation may involve pulsed or CW lasers. Computed parameters may include one or more of: the minority carrier mobility of the semiconductor material; the saturation drift velocity of minority carriers in the semiconductor material; the diffusion constant of minority carriers in the semiconductor material; the recombination lifetime of minority carriers in the semiconductor material; and/or the effective temperature of the semiconductor material. An optional magnetic field may be presented across the semiconductor region to enable computation of the effective mass of minority carriers in the semiconductor material.
摘要翻译：用于非破坏性地确定掺杂半导体材料的参数的方法包括向半导体材料的表面施加激发以在半导体材料的区域中光生成少数载流子，在半导体材料的区域上呈现电场，测量光致发光通过光生少数载流子的重组产生，并且使用光致发光测量来计算掺杂半导体材料的一个或多个参数。激发可能涉及脉冲或CW激光。计算参数可以包括半导体材料的少数载流子迁移率中的一种或多种; 半导体材料中少数载流子的饱和漂移速度; 半导体材料中少数载流子的扩散常数; 半导体材料中少数载流子的复合寿命; 和/或半导体材料的有效温度。可以在半导体区域上呈现可选的磁场，以便能够计算半导体材料中的少数载流子的有效质量。

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