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11. 发明授权

US07262865B2 Method and apparatus for controlling a calibration cycle or a metrology tool 失效
标题翻译：用于控制校准周期或计量工具的方法和装置
公开(公告)号：US07262865B2
公开(公告)日：2007-08-28
申请号：US10788498
申请日：2004-02-26
申请人： David Mui , Hiroki Sasano , Wei Liu
发明人： David Mui , Hiroki Sasano , Wei Liu
IPC分类号： G01B11/28 , G01B11/02 , G12B13/00
CPC分类号： G01B11/0616 , G01B11/24 , H01L22/20
摘要： A method and apparatus for controlling when a calibration cycle is started for a metrology tool. The method and apparatus exploits a correlation between a drift of a first parameter (e.g., film thickness measurement drift) and a drift of a second parameter (e.g., CD measurement drift). One embodiment of the method comprises measuring a film thickness on one or more reference substrates to determine when a drift component of these measurements exceeds a pre-determined range and thereafter calibrating the metrology tool when the drift component of the film thickness measurements exceeds the pre-determined range. Generally, the drift of the film thickness measurement will occur prior to substantial drift of the CD measurement occurring.
摘要翻译：一种用于控制计量工具何时开始校准周期的方法和装置。该方法和装置利用第一参数的漂移（例如，膜厚度测量漂移）和第二参数的漂移（例如，CD测量漂移）之间的相关性。该方法的一个实施例包括测量一个或多个参考基底上的膜厚度，以确定这些测量的漂移分量何时超过预定范围，然后当膜厚度测量的漂移分量超过预定范围时校准测量工具，确定范围。通常，膜厚度测量的漂移将发生在发生CD测量的实质漂移之前。

12. 发明授权

US07094613B2 Method for controlling accuracy and repeatability of an etch process 失效
标题翻译：用于控制蚀刻工艺的精度和重复性的方法
公开(公告)号：US07094613B2
公开(公告)日：2006-08-22
申请号：US10690318
申请日：2003-10-21
申请人： David Mui , Wei Liu , Hiroki Sasano
发明人： David Mui , Wei Liu , Hiroki Sasano
IPC分类号： H01L21/00
CPC分类号： H01L21/02071 , H01L21/31138 , H01L21/32137 , H01L21/32139
摘要： Embodiments of the invention generally relate to a method for etching in a processing platform (e.g. a cluster tool) wherein robust pre-etch and post-etch data may be obtained in-situ. The method includes the steps of obtaining pre-etched critical dimension (CD) measurements of a feature on a substrate, etching the feature; treating the etched substrate to reduce and/or remove sidewall polymers deposited on the feature during etching, and obtaining post-etched CD measurements. The CD measurements may be utilized to adjust the etch process to improved the accuracy and repeatability of device fabrication.
摘要翻译：本发明的实施例通常涉及在处理平台（例如，集群工具）中蚀刻的方法，其中可以原位获得鲁棒的预蚀刻和蚀刻后数据。该方法包括以下步骤：获得衬底上特征的预蚀刻临界尺寸（CD）测量值，蚀刻该特征; 处理蚀刻的衬底以在蚀刻期间减少和/或去除沉积在特征上的侧壁聚合物，并获得后蚀刻的CD测量。可以使用CD测量来调整蚀刻工艺以提高器件制造的精度和可重复性。

13. 发明申请

US20050064714A1 Method for controlling critical dimensions during an etch process 审中-公开
标题翻译：在蚀刻过程中控制临界尺寸的方法
公开(公告)号：US20050064714A1
公开(公告)日：2005-03-24
申请号：US10666317
申请日：2003-09-19
申请人： David Mui , Wei Liu , Hiroki Sasano , Kyeongran Yoo
发明人： David Mui , Wei Liu , Hiroki Sasano , Kyeongran Yoo
IPC分类号： H01L21/28 , H01L21/00 , H01L21/302 , H01L21/306 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/336 , H01L21/461 , H01L21/66 , H01L29/423 , H01L29/49 , H01L29/78
CPC分类号： H01L21/32137 , H01L21/28123 , H01L21/32139
摘要： A method for controlling dimensions of structures formed on a substrate using an etch process includes measuring pre-etch dimensions of the respective elements of a patterned etch mask and adjusting a process recipe of the etch process using the results of the pre-etch measurements. In one application, the method is used to control critical dimensions of a gate structure of a field effect transistor.
摘要翻译：使用蚀刻工艺来控制在衬底上形成的结构的尺寸的方法包括测量图案化蚀刻掩模的各个元件的预蚀刻尺寸，并使用预蚀刻测量的结果调整蚀刻工艺的工艺配方。在一个应用中，该方法用于控制场效应晶体管的栅极结构的关键尺寸。

14. 发明申请

US20050032250A1 Chamber stability monitoring using an integrated metrology tool 有权
标题翻译：室内稳定性监测采用综合计量工具
公开(公告)号：US20050032250A1
公开(公告)日：2005-02-10
申请号：US10636468
申请日：2003-08-06
申请人： David Mui , Wei Liu , Hiroki Sasano
发明人： David Mui , Wei Liu , Hiroki Sasano
IPC分类号： H01L21/3065 , H01L21/308 , H01L21/66
CPC分类号： H01L22/20 , H01L21/3065 , H01L21/3081
摘要： A method and apparatus for monitoring the stability of a substrate processing chamber and for adjusting the process recipe. Thickness and CD measurement data are collected before wafer processing and after wafer processing by an integrated or an in-situ metrology tool to monitor process chamber stability and to adjust the process recipe. The real time chamber stability monitoring enabled by the integrated metrology tool reduces the risk and cost of wafer mis-processing. The real time process recipe adjustment allows tightening of the process recipe. Process development cycle can also be reduced by the method and apparatus.
摘要翻译：一种用于监测基板处理室的稳定性并用于调整工艺配方的方法和装置。厚度和CD测量数据在晶片处理之前和通过集成或原位计量工具进行晶片处理之后收集以监测处理室稳定性并调整工艺配方。通过集成度量工具实现的实时室稳定性监测降低了晶片错误处理的风险和成本。实时过程配方调整可以缩短加工配方。方法和装置也可以减少过程开发周期。

15. 发明授权

US11866156B1 Apparatus for vortex generation to improve aerodynamics 有权
公开(公告)号：US11866156B1
公开(公告)日：2024-01-09
申请号：US17531766
申请日：2021-11-21
申请人： Wei Liu
发明人： Wei Liu
IPC分类号： B64C23/06 , B64C21/10
CPC分类号： B64C23/065 , B64C21/10
摘要： This invention is an apparatus for vortex generation by combining the function of means for vortex generation with the functions of the leading-edge aerodynamic surface, the airfoil, and/or the trailing-edge aerodynamic surface.

16. 发明授权

US11686448B1 Apparatus of projector headlights 有权
公开(公告)号：US11686448B1
公开(公告)日：2023-06-27
申请号：US17699103
申请日：2022-03-19
申请人： Wei Liu
发明人： Wei Liu
IPC分类号： B60Q1/00 , F21S41/683 , F21S41/32 , F21S41/43 , F21S41/25 , F21W102/135
CPC分类号： F21S41/683 , F21S41/25 , F21S41/32 , F21S41/43 , F21W2102/135
摘要： This invention is a projector headlight that, while offering dual beam patterns, boasts a 100% utilization of the light emitted from a light source by one of the following methods: (1) employing a reflective cutoff shield means to reflect the incoming light from said light source back to the reflector to enhance the illumination in low-beam pattern, (2) using reversible cutoff shield means to reflect the incoming light from said light source back to the reflector to enhance the illumination in low-beam pattern with no moving part involved, (3) utilizing a selective light-filter cutoff means to selectively reflect the incoming light from said light source back to the reflector to enhance the illumination in low-beam pattern without making use of any moving part, (4) using a low-beam light-emitting subassembly and a high-beam light-emitting subassembly that are separated by partition means to achieve dual beam patterns with no moving part, or (5) adopting a low-beam light-emitting subassembly in low-beam pattern and a high-beam light-emitting subassembly in high-beam pattern without any moving part.

17. 外观设计

USD952959S1 Intelligent pet fountain 有权
公开(公告)号：USD952959S1
公开(公告)日：2022-05-24
申请号：US29778103
申请日：2021-04-10
申请人： Wei Liu
设计人： Wei Liu

18. 发明授权

US09588205B2 Simultaneous and dynamic determination of longitudinal and transversal relaxation times of a nuclear spin system 有权
标题翻译：同时和动态地确定核自旋系统的纵向和横向弛豫时间
公开(公告)号：US09588205B2
公开(公告)日：2017-03-07
申请号：US13582800
申请日：2011-03-10
申请人： Stefanie Remmele , Wei Liu , Tobias Ratko Voigt , Christian Stehning
发明人： Stefanie Remmele , Wei Liu , Tobias Ratko Voigt , Christian Stehning
IPC分类号： G01R33/50 , G01R33/56 , G01R33/561
CPC分类号： G01R33/50 , G01R33/5601 , G01R33/5613 , G01R33/5616
摘要： The invention relates to a magnetic resonance imaging method for simultaneous and dynamic determination of a longitudinal relaxation time T1 and a transversal relaxation time T2 of the nuclear spin system of an object, in the context of DCE or DSE MRI. In this respect, the invention makes use of a steady-state gradient echo pulse sequence comprising an EPI readout module.
摘要翻译：本发明涉及一种用于在DCE或DSE MRI的背景下同时和动态地确定物体的核自旋系统的纵向弛豫时间T1和横向弛豫时间T2的磁共振成像方法。在这方面，本发明利用包括EPI读出模块的稳态梯度回波脉冲序列。

19. 发明授权

US09349561B2 Impregnated yttric or gadolinium-containing Barium-aluminum-scandate cathodes and their fabrication methods 有权
标题翻译：浸渍钇或钆钡铝钪阴极及其制造方法
公开(公告)号：US09349561B2
公开(公告)日：2016-05-24
申请号：US13340701
申请日：2011-12-30
申请人： Jinshu Wang , Wei Liu , Fan Yang , Xiang Liu , Hongyi Li , Meiling Zhou , Tieyong Zuo
发明人： Jinshu Wang , Wei Liu , Fan Yang , Xiang Liu , Hongyi Li , Meiling Zhou , Tieyong Zuo
IPC分类号： H01J1/14 , H01J1/142 , H01J1/13 , H01J1/144 , H01J9/04 , H01J23/05
CPC分类号： H01J1/142 , H01J1/13 , H01J1/14 , H01J1/144 , H01J9/047 , H01J23/05
摘要： Impregnated rare earth metal-containing barium-aluminum-scandate cathodes with a rare earth oxide doped tungsten matrix and methods for the fabrication thereof are described. In one aspect, an impregnated rare earth metal-containing barium-aluminum-scandate cathode comprises: a rare earth oxide doped tungsten matrix, and an impregnated active substance. The active substance comprises scandium oxide (Sc2O3), a second rare earth oxide, and barium calcium aluminate, wherein the molar ratio of Ba:Ca:Al is about 4:1:1.
摘要翻译：描述了具有稀土氧化物掺杂钨基体的含浸稀土金属的钡 - 铝 - 钪酸盐阴极及其制造方法。一方面，含浸稀土金属的钡 - 铝 - 钪酸盐阴极包括：掺杂稀土氧化物的钨基体和浸渍的活性物质。活性物质包含氧化钪（Sc 2 O 3），第二稀土氧化物和铝酸钡钙，其中Ba:Ca:Al的摩尔比为约4:1:1。

20. 发明授权

US09248430B2 Method for synthesis of 1-decene oligomer 有权
标题翻译： 1-癸烯低聚物的合成方法
公开(公告)号：US09248430B2
公开(公告)日：2016-02-02
申请号：US13510216
申请日：2010-07-22
申请人： Fuling Huang , Puke Mi , Sihan Wang , Jinhua Qian , Qian Chen , Sheng Xu , Jianzhong Li , Gang Wang , Baojun Zhang , Min Liu , Guizhi Wang , Xuemei Han , Jiabo Qu , Panfeng Lu , Shukun Sun , Xiuhui Wang , Yuxin Gao , Deshun Zhang , Ling Jiang , Buwei Yu , Libo Wang , Yali Wang , Lingting Fan , Peng Wei , Wei Liu , Guiyue Guo
发明人： Fuling Huang , Puke Mi , Sihan Wang , Jinhua Qian , Qian Chen , Sheng Xu , Jianzhong Li , Gang Wang , Baojun Zhang , Min Liu , Guizhi Wang , Xuemei Han , Jiabo Qu , Panfeng Lu , Shukun Sun , Xiuhui Wang , Yuxin Gao , Deshun Zhang , Ling Jiang , Buwei Yu , Libo Wang , Yali Wang , Lingting Fan , Peng Wei , Wei Liu , Guiyue Guo
IPC分类号： C07C6/10 , B01J21/04 , B01J37/02 , C07C2/22
CPC分类号： B01J21/04 , B01J37/0205 , B01J37/0207 , C07C2/22 , C07C2521/04 , C07C2527/126 , C07C11/02
摘要： A method for synthesis of 1-decene oligomer is provided, wherein 1-decene is polymerized at 80-120° C., 0.8-1.4 MPa in the presence of aluminum trichloride catalyst supported on gamma-alumina and n-hexane solvent where the volume ratio of 1-decene to n-hexane is 3:8-4:1. The catalyst is treated as follows: impregnating gamma-alumina carrier in 0.5-2.0 M of hydrochloric acid, sulfuric acid, nitric acid or mixtures thereof, then vacuum drying at 80-100° C. and calcining at 400-800° C.; dissolving 5-10 g of anhydrous aluminum trichloride in 100 ml of tetrachloromethane, trichloromethane or dichloromethane solvent; adding the obtained solution into 10-20 g of activated alumina carrier and obtaining the catalyst after vacuum drying. The conversion of 1-decene is 50 wt % or more. The oligomer has a kinematic viscosity at 40° C. of 6.0-25 mm2/s and a viscosity index of 160-262.
摘要翻译：提供1-癸烯低聚物的合成方法，其中1-癸烯在负载在γ-氧化铝和正己烷溶剂上的三氯化铝催化剂存在下，在80-120℃，0.8-1.4MPa下聚合，其中体积 1-癸烯与正己烷的比例为3：8-4：1。催化剂的处理如下：将γ-氧化铝载体浸入0.5-2.0M盐酸，硫酸，硝酸或其混合物中，然后在80-100℃真空干燥并在400-800℃下煅烧。将5-10g无水三氯化铝溶于100ml四氯甲烷，三氯甲烷或二氯甲烷溶剂中; 将得到的溶液加入10-20g活性氧化铝载体中，真空干燥后得到催化剂。 1-癸烯的转化率为50重量％以上。低聚物在40℃下的运动粘度为6.0-25mm 2 / s，粘度指数为160-262。

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