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11. 发明申请

US20080297280A1 Integrated Coupled Resonator Filter and Bulk Acoustic Wave Devices 有权
标题翻译：集成耦合谐振滤波器和体声波器件
公开(公告)号：US20080297280A1
公开(公告)日：2008-12-04
申请号：US11756583
申请日：2007-05-31
申请人： Robert Thalhammer , Martin Handtmann , Jyrki Kaitila
发明人： Robert Thalhammer , Martin Handtmann , Jyrki Kaitila
IPC分类号： H03H9/60 , H01L41/22
CPC分类号： H03H9/0095 , H03H3/04 , H03H9/564 , H03H9/584 , H03H9/589 , H03H9/605 , H03H2003/0471 , Y10T29/42
摘要： A method for manufacturing a filter device is provided. The filter device comprises a coupled resonator at a first site, a shunt resonator at a second site and a series resonator at a third site, the coupled resonator comprising a first and a second resonator. The method comprising a step of providing a substrate with a piezoelectric layer sandwiched between a first electrode and a first part of a second electrode at the first site and the second site, the piezoelectric layer sandwiched between the first electrode and a second part of the second electrode at the third site. The method further comprising the step of forming a coupling layer on the second electrode, the step of forming a further piezoelectric layer sandwiched between a further first electrode and a further second electrode at the third site and the step of removing the coupling layer at the second and third sites.
摘要翻译：提供一种制造过滤装置的方法。滤波器装置包括在第一位置处的耦合谐振器，在第二位置处的并联谐振器和在第三位置的串联谐振器，所述耦合谐振器包括第一和第二谐振器。该方法包括以下步骤：在第一位置和第二位置处提供夹在第一电极和第二电极的第一部分之间的压电层的基板，压电层夹在第一电极和第二电极的第二部分之间电极在第三个位置。该方法还包括在第二电极上形成耦合层的步骤，在第三位置处形成夹在另外的第一电极和另外的第二电极之间的另外的压电层的步骤以及在第二位置处去除耦合层的步骤和第三个网站。

12. 发明申请

US20080297278A1 Bulk Acoustic Wave Device with Coupled Resonators 有权
标题翻译：具有耦合谐振器的体声波器件
公开(公告)号：US20080297278A1
公开(公告)日：2008-12-04
申请号：US11756521
申请日：2007-05-31
申请人： Martin Handtmann , Jyrki Kaitila
发明人： Martin Handtmann , Jyrki Kaitila
IPC分类号： H03H9/58
CPC分类号： H03H9/605 , H03H9/0095 , H03H9/584 , H03H9/589 , H03H9/60
摘要： A bulk acoustic wave device includes first and second resonators, which are acoustically coupled and electrically connected in parallel.
摘要翻译：体声波器件包括第一和第二谐振器，它们是声学耦合的并且并联电连接。

13. 发明授权

US07339445B2 BAW duplexer without phase shifter 有权
标题翻译： BAW双工器无移相器
公开(公告)号：US07339445B2
公开(公告)日：2008-03-04
申请号：US11246996
申请日：2005-10-07
申请人： Robert Aigner , Martin Handtmann
发明人： Robert Aigner , Martin Handtmann
IPC分类号： H03H9/70
CPC分类号： H03H9/706
摘要： A duplexer for connection with an antenna comprises an antenna port, a transmitting filter comprising bulk acoustic wave (BAW) resonators having a first antenna side impedance coupled with the antenna port, a receiving filter comprising BAW resonators having a second antenna side impedance coupled with the antenna port, and a shunt inductance coupled between the antenna port and ground. The shunt inductance and the first and second antenna side impedances of the transmitting filter and the receiving filter are selected in such a way that the shunt inductance turns the first and second input impedance in a negative direction in a Smith diagram.
摘要翻译：用于与天线连接的双工器包括天线端口，发射滤波器，包括具有与天线端口耦合的第一天线侧阻抗的体声波（BAW）谐振器，接收滤波器，包括具有与第二天线侧阻抗耦合的第二天线侧阻抗的BAW谐振器天线端口和耦合在天线端口和地之间的并联电感。选择发射滤波器和接收滤波器的并联电感和第一和第二天线侧阻抗，使得并联电感在史密斯图中将负的第一和第二输入阻抗转变成负方向。

14. 发明申请

US20060290446A1 BAW apparatus 有权
标题翻译： BAW设备
公开(公告)号：US20060290446A1
公开(公告)日：2006-12-28
申请号：US11174446
申请日：2005-07-01
申请人： Robert Aigner , Martin Handtmann
发明人： Robert Aigner , Martin Handtmann
IPC分类号： H03H9/70 , H03H9/58
CPC分类号： H03H9/605 , H03H9/02015 , H03H9/02133
摘要： A description is given of a BAW apparatus having a first BAW resonator and a second BAW resonator which are connected antiparallel to one another so as to reduce non-linear effects, in particular harmonics.
摘要翻译：给出了具有第一BAW谐振器和第二BAW谐振器的BAW装置的描述，其彼此反平行连接，以便减少非线性效应，特别是谐波。

15. 发明申请

US20050062363A1 Piezoelectric oscillating circuit, method for manufacturing the same and filter arrangement 有权
标题翻译：压电振荡电路，制造方法和滤波器布置
公开(公告)号：US20050062363A1
公开(公告)日：2005-03-24
申请号：US10869817
申请日：2004-06-16
申请人： Robert Aigner , Lueder Elbrecht , Martin Handtmann , Stephan Marksteiner , Winfried Nessler , Hans-Joerg Timme
发明人： Robert Aigner , Lueder Elbrecht , Martin Handtmann , Stephan Marksteiner , Winfried Nessler , Hans-Joerg Timme
IPC分类号： H03H3/04 , H03H9/17 , H01B13/00 , H02N2/00
CPC分类号： H03H3/04 , Y10T29/42 , Y10T29/49155 , Y10T29/49156
摘要： In a method for manufacturing a piezoelectric oscillating circuit in thin film technology, wherein the oscillating circuit includes a predetermined natural frequency and a plurality of layers, first of all at least a first layer of the piezoelectric oscillating circuit is generated. Subsequently, by processing the first layer a frequency correction is performed. Subsequently, at least a second layer of the piezoelectric oscillating circuit is generated and processed for performing a second frequency correction.
摘要翻译：在制造薄膜技术中的压电振荡电路的方法中，其中振荡电路包括预定的固有频率和多层，首先产生压电振荡电路的至少第一层。随后，通过处理第一层，执行频率校正。随后，产生并处理至少第二层的压电振荡电路，以执行第二频率校正。

16. 发明申请

US20050012568A1 BAW resonator 有权
标题翻译： BAW谐振器
公开(公告)号：US20050012568A1
公开(公告)日：2005-01-20
申请号：US10821116
申请日：2004-04-08
申请人： Robert Aigner , Martin Handtmann , Stephan Marksteiner , Winfried Nessler
发明人： Robert Aigner , Martin Handtmann , Stephan Marksteiner , Winfried Nessler
IPC分类号： H03H9/00 , H03H9/17 , H03H9/58 , H03H9/54
CPC分类号： H03H9/583 , H03H9/0095 , H03H9/174 , H03H9/175 , H03H9/176 , H03H9/178 , H03H9/581 , Y10T29/42
摘要： A BAW resonator includes a first piezoelectric layer made of a material oriented toward a first direction, and a second piezoelectric layer made of a material oriented toward a second direction which is opposed to the first direction. The first piezoelectric layer and the second piezoelectric layer are acoustically coupled with each other.
摘要翻译： BAW谐振器包括由朝向第一方向定向的材料制成的第一压电层和由朝向与第一方向相反的第二方向定向的材料制成的第二压电层。第一压电层和第二压电层彼此声学耦合。

17. 发明授权

US08193877B2 Duplexer with negative phase shifting circuit 失效
标题翻译：具有负相移电路的双工器
公开(公告)号：US08193877B2
公开(公告)日：2012-06-05
申请号：US12627122
申请日：2009-11-30
申请人： Martin Fritz , Martin Handtmann , Ji-Fuh Liang , Bernhard Gebauer
发明人： Martin Fritz , Martin Handtmann , Ji-Fuh Liang , Bernhard Gebauer
IPC分类号： H03H9/64 , H03H9/68
CPC分类号： H04B1/52 , H03H7/19 , H03H9/706 , H04B1/0057 , H04B1/18
摘要： A duplexer includes first and second acoustic filters and a phase shifter. The first acoustic filter is connected between an antenna and the transmitter, and has a first passband. The second acoustic filter is connected between the antenna and the receiver, and has a second passband. The phase shifter includes at least one series capacitor connected in series with the antenna and at least one shunt inductor connected between the at least one capacitor and ground. The phase shifter is connected between the antenna and the first filter when the first passband is higher than the second passband, and provides a negative phase shift of an output impedance of the first filter. The phase shifter is connected between the antenna and the second filter when the second passband is higher than the first passband, and provides a negative phase shift of an input impedance of the second filter.
摘要翻译：双工器包括第一和第二声滤波器和移相器。第一声滤波器连接在天线和发射机之间，并且具有第一通带。第二声滤波器连接在天线和接收机之间，并具有第二通带。移相器包括与天线串联连接的至少一个串联电容器和连接在至少一个电容器和地之间的至少一个并联电感器。当第一通带高于第二通带时，移相器连接在天线和第一滤波器之间，并且提供第一滤波器的输出阻抗的负相移。当第二通带高于第一通带时，移相器连接在天线和第二滤波器之间，并且提供第二滤波器的输入阻抗的负相移。

18. 发明授权

US07728485B2 Bulk acoustic wave device and a method of its manufacturing 失效
标题翻译：体声波器件及其制造方法
公开(公告)号：US07728485B2
公开(公告)日：2010-06-01
申请号：US12130756
申请日：2008-05-30
申请人： Martin Handtmann , Martin Franosch
发明人： Martin Handtmann , Martin Franosch
IPC分类号： H01L41/053 , H03H9/02 , H01L41/22 , H04R17/10 , C23F1/00
CPC分类号： H03H9/174 , H03H9/0207 , H03H9/02125 , H03H9/172 , H03H9/175 , H03H9/588 , H03H9/589 , Y10T29/42
摘要： A BAW device includes a semiconductor substrate with a surface region, an insulating layer formed on the surface region and a piezoelectric layer sandwiched by a first and second electrode, wherein the second electrode is formed on the insulating layer. The surface region is performed such that a voltage dependence of a capacitance between the substrate and the second electrode is substantially suppressed.
摘要翻译： BAW器件包括具有表面区域的半导体衬底，形成在表面区域上的绝缘层和由第一和第二电极夹在中间的压电层，其中第二电极形成在绝缘层上。执行表面区域，使得基板和第二电极之间的电容的电压依赖性被基本上抑制。

19. 发明申请

US20090265903A1 Coupled Resonator Device and Method for Manufacturing a Coupled Resonator Device 失效
标题翻译：耦合谐振器器件及制造耦合谐振器器件的方法
公开(公告)号：US20090265903A1
公开(公告)日：2009-10-29
申请号：US12110961
申请日：2008-04-28
申请人： Martin Handtmann , Klaus-Guenter Oppermann , Martin Fritz
发明人： Martin Handtmann , Klaus-Guenter Oppermann , Martin Fritz
IPC分类号： H04R17/10
CPC分类号： H03H3/02 , H03H9/584 , Y10T29/42 , Y10T29/49005 , Y10T29/49156
摘要： A method for manufacturing a coupled resonator device includes forming a first BAW-device on a first substrate, forming a second BAW-device on a second substrate, and bonding the first and the second BAW-device such that the bonded first and second BAW-device are sandwiched between the first and second substrate.
摘要翻译：一种耦合谐振器装置的制造方法包括在第一基板上形成第一BAW器件，在第二基板上形成第二BAW器件，以及将第一和第二BAW器件接合，使得结合的第一和第二BAW- 器件夹在第一和第二衬底之间。

20. 发明申请

US20080224297A1 Apparatus comprising a device and method for producing it 有权
标题翻译：一种装置，包括用于生产该装置的装置和方法
公开(公告)号：US20080224297A1
公开(公告)日：2008-09-18
申请号：US11724603
申请日：2007-03-15
申请人： Klaus-Guenter Oppermann , Martin Franosch , Martin Handtmann
发明人： Klaus-Guenter Oppermann , Martin Franosch , Martin Handtmann
IPC分类号： H01L23/15 , H01L21/58 , H01L23/48
CPC分类号： H03H9/02125 , H01L21/6835 , H01L23/3121 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/96 , H01L24/97 , H01L2221/68368 , H01L2224/0401 , H01L2224/11002 , H01L2224/16225 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01068 , H01L2924/01072 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H01L2924/13091 , H01L2924/1421 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/00
摘要： An apparatus comprises a device layer structure, a device integrated into the device layer structure, an insulating carrier substrate and an insulating layer being continuously positioned between the device layer structure and the insulating carrier substrate, the insulating layer having a thickness which is less than 1/10 of a thickness of the insulating carrier substrate. An apparatus further comprises a device integrated into a device layer structure disposed on an insulating layer, a housing layer disposed on the device layer structure and housing the device, a contact providing an electrical connection between the device and a surface of the housing layer opposed to the device layer structure and a molding material surrounding the housing layer and the insulating layer, the molding material directly abutting on a surface of the insulating layer being opposed to the device layer structure.
摘要翻译：一种装置包括器件层结构，集成到器件层结构中的器件，绝缘载体衬底和绝缘层，其连续地位于器件层结构和绝缘载体衬底之间，绝缘层的厚度小于1 绝缘载体基板的厚度的1/10。一种装置还包括集成在设置在绝缘层上的器件层结构中的器件，设置在器件层结构上并容纳该器件的壳体层，提供该器件与壳体层相对的表面之间的电连接的触点所述器件层结构和围绕所述壳体层和所述绝缘层的模制材料，所述模制材料直接邻接在所述绝缘层的与所述器件层结构相对的表面上。

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