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11. 发明申请

US20050252268A1 High integrity sputtering target material and method for producing bulk quantities of same 审中-公开
标题翻译：高完整性溅射靶材料及其批量生产方法
公开(公告)号：US20050252268A1
公开(公告)日：2005-11-17
申请号：US11036759
申请日：2005-01-14
申请人： Christopher Michaluk , Louis Huber , P. Alexander , Craig Carpenter
发明人： Christopher Michaluk , Louis Huber , P. Alexander , Craig Carpenter
IPC分类号： B21B23/00 , C22F1/00 , C22F1/18 , C23C14/34
CPC分类号： C22F1/18 , C22F1/183 , C23C14/3414
摘要： A method of making metal plates as well as sputtering targets is described. In addition, products made by the process of the present invention are further described. The present invention preferably provides a product with reduced or minimized marbleizing on the surface of the metal product which has a multitude of benefits.
摘要翻译：描述制造金属板以及溅射靶的方法。此外，进一步描述通过本发明的方法制备的产品。本发明优选提供在金属产品的表面上具有减少或最小化的大理石的产品，其具有许多益处。

12. 发明申请

US20070220731A1 Apparatus and method for engaging components through thermal contraction 审中-公开
标题翻译：用于通过热收缩来接合部件的装置和方法
公开(公告)号：US20070220731A1
公开(公告)日：2007-09-27
申请号：US11386848
申请日：2006-03-23
申请人： Daniel Soroka , Richard Kersterke , Joseph Colvin , Dave Hungerford , Craig Carpenter , Wayne Lewis
发明人： Daniel Soroka , Richard Kersterke , Joseph Colvin , Dave Hungerford , Craig Carpenter , Wayne Lewis
IPC分类号： B23P11/02
CPC分类号： B23P11/025 , B23B31/202 , B23B2240/28 , B23B2260/138 , F16B4/006 , Y10T29/49865 , Y10T409/30952
摘要： A bushing has an externally threaded portion with a thread pitch P1. A collet body has an internally threaded portion with a thread pitch P2, which is smaller than P1 by a pitch differential, ΔP. To assembly the bushing and collet body, the collet body is heated relative to the bushing to reduce the ΔP. The threaded portions of the bushing and collet body are then threadingly engaged with each other. The temperatures of the bushing and collet body are then equalized, which tends to increase the ΔP, which causes the threaded portions to bind with each other and resist relative loosening rotation. The threaded portions may additionally/alternatively be reverse tapered and/or include variable thread pitches that cause the threaded portions to further bind with each other.
摘要翻译：衬套具有螺纹间距P 1的外螺纹部分。夹头主体具有螺距P 2以上的内螺纹部分，该螺纹部分的间距P 2小于P 1以上的间距差ΔP。为了组装衬套和夹头体，夹头体相对于衬套加热以减小DeltaP。衬套和夹头体的螺纹部分然后彼此螺纹接合。然后将衬套和夹头体的温度相等，这倾向于增加ΔP，这导致螺纹部分彼此结合并抵抗相对松动的旋转。螺纹部分可以另外地或者可选地是倒锥形的和/或包括导致螺纹部分彼此进一步结合的可变螺距。

13. 发明申请

US20070036895A1 Deposition methods utilizing microwave excitation 失效
标题翻译：利用微波激发的沉积方法
公开(公告)号：US20070036895A1
公开(公告)日：2007-02-15
申请号：US11519430
申请日：2006-09-11
申请人： Craig Carpenter , Ross Dando , Philip Campbell
发明人： Craig Carpenter , Ross Dando , Philip Campbell
IPC分类号： H05H1/24 , C23C16/00
CPC分类号： C23C16/45536 , C23C16/45525 , C23C16/511 , C30B25/105 , H01J37/32192 , H01Q21/0087
摘要： The invention includes a deposition apparatus having a reaction chamber, and a microwave source external to the chamber. The microwave source is configured to direct microwave radiation toward the chamber. The chamber includes a window through which microwave radiation from the microwave source can pass into the chamber. The invention also includes deposition methods (such as CVD or ALD methods) in which microwave radiation is utilized to activate at least one component within a reaction chamber during deposition of a material over a substrate within the reaction chamber.
摘要翻译：本发明包括具有反应室的沉积设备和室外的微波源。微波源构造成将微波辐射引导到腔室。该室包括一个窗口，通过该窗口，微波源的微波辐射可以通过该窗口进入腔室。本发明还包括沉积方法（例如CVD或ALD方法），其中在将材料沉积在反应室内的衬底上时，利用微波辐射来激活反应室内的至少一个组分。

14. 发明申请

US20060249253A1 Manifold assembly for feeding reactive precursors to substrate processing chambers 审中-公开
公开(公告)号：US20060249253A1
公开(公告)日：2006-11-09
申请号：US11481460
申请日：2006-07-05
申请人： Ross Dando , Craig Carpenter , Garo Derderian
发明人： Ross Dando , Craig Carpenter , Garo Derderian
IPC分类号： H01L21/306
CPC分类号： C23C16/4408 , C23C16/455 , C23C16/45561
摘要： A reactive precursor feeding manifold assembly includes a body comprising a plenum chamber. A valve is received proximate the body and has at least two inlets and at least one outlet. At least one valve inlet is configured for connection with a reactive precursor source. At least one valve outlet feeds to a precursor inlet to the plenum chamber. A purge stream is included which has a purge inlet to the plenum chamber which is received upstream of the plenum chamber precursor inlet. The body has a plenum chamber outlet configured to connect with a substrate processing chamber. In one implementation, the plenum chamber purge inlet is angled from the plenum chamber precursor inlet. In one implementation, structure is included on the body which is configured to mount the body to a substrate processing chamber with the plenum chamber outlet proximate to and connected with a substrate processing chamber inlet.

15. 发明申请

US20060065635A1 Deposition chamber surface enhancement and resulting deposition chambers 审中-公开
标题翻译：沉积室表面增强和沉积室
公开(公告)号：US20060065635A1
公开(公告)日：2006-03-30
申请号：US11271673
申请日：2005-11-09
申请人： Garo Derderian , Gurtej Sandhu , Ross Dando , Craig Carpenter , Philip Campbell
发明人： Garo Derderian , Gurtej Sandhu , Ross Dando , Craig Carpenter , Philip Campbell
IPC分类号： C23C16/52 , C03C15/00
CPC分类号： H01J37/32477 , C23C16/4404 , H01J37/3244 , H01J2237/022
摘要： Methods for passivating exposed surfaces within an apparatus for depositing thin films on a substrate are disclosed. Interior surfaces of a deposition chamber and conduits in communication therewith are passivated to prevent reactants used in a deposition process and reaction products from adsorbing or chemisorbing to the interior surfaces. The surfaces may be passivated for this purpose by surface treatments, lining, temperature regulation, or combinations thereof. A method for determining a temperature or temperature range at which to maintain a surface to minimize accumulation of reactants and reaction products is also disclosed. A deposition apparatus with passivated surfaces within the deposition chamber and gas flow paths is also disclosed.
摘要翻译：公开了在用于在衬底上沉积薄膜的装置中的暴露表面钝化的方法。沉积室的内表面和与其连通的导管被钝化以防止在沉积过程中使用的反应物和反应产物吸附或化学吸附到内表面。表面可以通过表面处理，衬里，温度调节或其组合来钝化。还公开了用于确定维持表面以使反应物和反应产物的积聚最小化的温度或温度范围的方法。还公开了在沉积室和气体流动路径内具有钝化表面的沉积设备。

16. 发明申请

US20050142291A1 Chemical vapor deposition methods 审中-公开
标题翻译：化学气相沉积法
公开(公告)号：US20050142291A1
公开(公告)日：2005-06-30
申请号：US11062571
申请日：2005-02-22
申请人： Ross Dando , Philip Campbell , Craig Carpenter , Allen Mardian
发明人： Ross Dando , Philip Campbell , Craig Carpenter , Allen Mardian
IPC分类号： C23C16/44 , C23C16/00
CPC分类号： C23C16/4405 , C23C16/4412
摘要： A chemical vapor deposition chamber has a vacuum exhaust line extending therefrom. Material is deposited over a first plurality of substrates within the deposition chamber under conditions effective to deposit effluent product over internal walls of the vacuum exhaust line. At least a portion of the vacuum exhaust line is isolated from the deposition chamber. While isolating, a cleaning fluid is flowed to the vacuum exhaust line effective to at least reduce thickness of the effluent product over the internal walls within the vacuum exhaust line from what it was prior to initiating said flowing. After said flowing, the portion of the vacuum exhaust line, and the deposition chamber are provided in fluid communication with one another and material is deposited over a second plurality of substrates within the deposition chamber under conditions effective to deposit effluent product over internal walls of the vacuum exhaust line.
摘要翻译：化学气相沉积室具有从其延伸的真空排气管。在有效地将流出物产物沉积在真空排气管的内壁上的条件下，材料沉积在沉积室内的第一组多个衬底上。真空排气管线的至少一部分与沉积室隔离。在分离时，清洁流体流到真空排气管线，有效地至少将真空排气管内的内壁上的流出物的厚度从起始流动之前的厚度减小到最小。在所述流动之后，真空排气管线的部分和沉积室彼此流体连通地设置，并且在有效地将流出物产物沉积在沉积物的内壁上的条件下，在沉积室内的第二多个基板上沉积材料真空排气管。

17. 发明申请

US20050112890A1 CVD apparatuses and methods of forming a layer over a semiconductor substrate 审中-公开
公开(公告)号：US20050112890A1
公开(公告)日：2005-05-26
申请号：US11027726
申请日：2004-12-30
申请人： Philip Campbell , Craig Carpenter , Ross Dando , Kevin Hamer
发明人： Philip Campbell , Craig Carpenter , Ross Dando , Kevin Hamer
IPC分类号： C23C16/44 , C23C16/455 , H01L21/316 , H01L21/302 , H01L21/461
CPC分类号： C23C16/45519 , C23C16/45544 , C23C16/45568 , H01L21/31604
摘要： The invention includes a method of forming a layer on a semiconductor substrate that is provided within a reaction chamber. The chamber has at least two inlet ports that terminate in openings. A first material is flowed into the reaction chamber through the opening of a first of the inlet ports. At least a portion of the first material is deposited onto the substrate. The reaction chamber is purged by flowing an inert material into the reaction chamber through the opening of a second of the inlet ports. The inert material passes from the opening and through a distribution head that is positioned within the reaction chamber between the first and second openings. A second material can then be flowed into the chamber through an opening in a third inlet port and deposited onto the substrate. The invention also includes a chemical vapor deposition apparatus.

18. 发明申请

US20050028734A1 Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces 有权
公开(公告)号：US20050028734A1
公开(公告)日：2005-02-10
申请号：US10932470
申请日：2004-09-01
申请人： Craig Carpenter , Ross Dando , Danny Dynka
发明人： Craig Carpenter , Ross Dando , Danny Dynka
IPC分类号： C23C16/44 , C23C16/455 , C23C16/54 , C23C16/00
CPC分类号： C23C16/54 , C23C16/4401 , C23C16/45519 , C23C16/45544
摘要： Reactors having gas distributors for depositing materials onto micro-device workpieces, systems that include such reactors, and methods for depositing materials onto micro-device workpieces are disclosed herein. In one embodiment, a reactor for depositing materials onto a micro-device workpiece includes a reaction chamber, a passageway, and a door assembly. The reaction chamber includes a gas distributor configured to provide a flow of gas(es) to a micro-device workpiece on a workpiece holder. The passageway, which has a first end open to the reaction chamber and a second end apart from the reaction chamber, is configured to provide ingression to and egression from the chamber for processing the micro-device workpiece. The door assembly is configured to open and sealably close a door at the second end of the passageway. A gas conditioning system positioned in the door is configured to maintain a desired concentration and phase of gas constituents in the passageway.

19. 发明申请

US20050028732A1 Chemical vapor deposition method 失效
标题翻译：化学气相沉积法
公开(公告)号：US20050028732A1
公开(公告)日：2005-02-10
申请号：US10912878
申请日：2004-08-06
申请人： Allen Mardian , Philip Campbell , Craig Carpenter , Randy Mercil , Sujit Sharan
发明人： Allen Mardian , Philip Campbell , Craig Carpenter , Randy Mercil , Sujit Sharan
IPC分类号： C23C16/44 , C23C16/455 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/4401 , C23C16/45519
摘要： A chemical vapor deposition apparatus includes a deposition chamber defined at least in part by at least one of a chamber sidewall and a chamber base wall. A substrate holder is received within the chamber. At least one process chemical inlet to the deposition chamber is included. At least one of the chamber sidewall and chamber base wall includes a chamber surface having a plurality of purge gas inlets to the chamber therein. The purge gas inlets are separate from the at least one process chemical inlet. A purge gas inlet passageway is provided in fluid communication with the purge gas inlets. Further implementations, including deposition method implementations, are contemplated.
摘要翻译：化学气相沉积装置包括至少部分地由室侧壁和室底壁中的至少一个限定的沉积室。衬底保持器容纳在腔室内。包括沉积室的至少一个工艺化学品入口。腔室侧壁和腔室底壁中的至少一个包括腔室表面，其中具有多个吹扫气体入口。吹扫气体入口与至少一个过程化学品入口分开。吹扫气体入口通道设置成与净化气体入口流体连通。考虑了包括沉积方法实现的其他实现。

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