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11. 发明申请

US20050056866A1 Circuit arrays having cells with combinations of transistors and nanotube switching elements 有权
公开(公告)号：US20050056866A1
公开(公告)日：2005-03-17
申请号：US10864681
申请日：2004-06-09
申请人： Claude Bertin , Thomas Rueckes , Brent Segal , Frank Guo
发明人： Claude Bertin , Thomas Rueckes , Brent Segal , Frank Guo
IPC分类号： G11C7/06 , G11C8/02 , G11C11/00 , G11C11/50 , G11C13/02 , G11C16/02 , G11C16/04 , G11C17/16 , G11C23/00 , H01H59/00 , H01J1/62 , H01L20060101 , H01L21/336 , H01L21/82 , H01L21/8246 , H01L27/112 , H01L27/115 , H01L27/28 , H01L29/06 , H01L29/423 , H01L29/739 , H01L29/745 , H01L29/76 , H01L51/00 , H01L51/05 , H01L51/30 , H03K17/16
CPC分类号： H01L29/78 , B82Y10/00 , B82Y99/00 , G11C7/065 , G11C13/025 , G11C16/0416 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/16 , G11C2213/17 , G11C2213/79 , H01H1/0094 , H01L27/10 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L27/115 , H01L27/286 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/0508 , Y10S977/708 , Y10S977/724 , Y10S977/742 , Y10S977/762 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Circuit arrays having cells with combinations of transistors and nanotube switches. Under one embodiment, a circuit array includes a plurality of cells arranged in an organization of words, each word having a plurality of bits. Each cell is responsive to a bit line, word line, reference line, and release line. Bit lines are arranged orthogonally relative to word lines and each word line and bit line are shared among a plurality of cells. Each cell is selectable via the activation of the bit line and word line. Each cell includes a field effect transistor coupled to a nanotube switching element. The nanotube switching element is switchable to at least two physical positions at least in part in response to electrical stimulation via the reference line and release line. Information state of the cell is non-volatilely stored via the respective physical position of the nanotube switching element. Under another embodiment, a circuit array includes a plurality of cells arranged in an organization of words, each word having a plurality of bits. Each cell is responsive to a bit line, word line, and reference line. Each word line and bit line are shared among a plurality of cells. Each cell is selectable via the activation of the bit line and word line. Each cell includes a field effect transistor and a nanotube switching element. Each nanotube switching element includes a nanotube article positioned between a set electrode and a release electrode. The set electrode may be electrically stimulated to electro-statically attract the nanotube article into contact with the set electrode and the release electrode may be electrically stimulated to electro-statically attract the nanotube article out of contact with the set electrode. Information state of the cell is non-volatilely stored via the respective physical position of the nanotube switching element. Cells are arranged as pairs with the nanotube switching elements of the pair being cross coupled so that the set electrode of one nanotube switching element is coupled to the release electrode of the other and the release electrode of the one nanotube switching element being coupled to the set electrode of the other. The nanotube articles are coupled to the reference line, and the source of one field effect transistor of a pair is coupled to the set electrode to one of the two nanotube switching elements and the source of the other field effect transistor of the pair is coupled to the release electrode to the one of the two nanotube switching elements.

12. 发明申请

US20050041466A1 Non-volatile RAM cell and array using nanotube switch position for information state 有权
标题翻译：非易失性RAM单元和阵列使用纳米管开关位置进行信息状态
公开(公告)号：US20050041466A1
公开(公告)日：2005-02-24
申请号：US10810963
申请日：2004-03-26
申请人： Thomas Rueckes , Brent Segal , Bernhard Vogeli , Darren Brock , Venkatachalam Jaiprakash , Claude Bertin
发明人： Thomas Rueckes , Brent Segal , Bernhard Vogeli , Darren Brock , Venkatachalam Jaiprakash , Claude Bertin
IPC分类号： G11C13/02 , G11C23/00 , G11C11/34
CPC分类号： G11C23/00 , B82Y10/00 , G11C13/025
摘要： Non-Volatile RAM Cell and Array using Nanotube Switch Position for Information State. A non-volatile memory array includes a plurality of memory cells, each cell receiving a bit line, word line, and release line. Each memory cell includes a cell selection transistor with first, second and third nodes. The first and second nodes are in respective electrical communication with the bit line and the word line. Each cell further includes an electromechanically deflectable switch, having a first, second and third node. The first node is in electrical communication with the release line, and a third node is in electrical communication with the third node of the cell selection transistor. The electromechanically deflectable switch includes a nanotube switching element physically positioned between the first and third nodes of the switch and in electrical communication with the second node of the switch. The second node of the switch is in communication with a reference signal. Each nanotube switching element is deflectable into contact with the third node of the switch in response to signals at the first and second node of the cell selection transistor and is releasable from such contact in response to a signal at the release line. In preferred embodiments, the cell selection transistor is a FET and the second node of the transistor is a gate of the FET.
摘要翻译：非易失性RAM单元和阵列使用纳米管切换位置信息状态。非易失性存储器阵列包括多个存储器单元，每个单元接收位线，字线和释放线。每个存储单元包括具有第一，第二和第三节点的单元选择晶体管。第一和第二节点与位线和字线分别电气通信。每个单元还包括具有第一，第二和第三节点的机电偏转开关。第一节点与释放线电连通，第三节点与小区选择晶体管的第三节点电通信。机电可偏转开关包括物理地位于开关的第一和第三节点之间并与开关的第二节点电通信的纳米管开关元件。交换机的第二个节点与参考信号通信。每个纳米管开关元件响应于电池选择晶体管的第一和第二节点处的信号而偏转成与开关的第三节点接触，并且响应于释放线处的信号而可从该接触件释放。在优选实施例中，电池选择晶体管是FET，晶体管的第二节点是FET的栅极。

13. 发明申请

US20080062755A1 ISOLATION STRUCTURE FOR DEFLECTABLE NANOTUBE ELEMENTS 有权
标题翻译：可分离纳米元素的隔离结构
公开(公告)号：US20080062755A1
公开(公告)日：2008-03-13
申请号：US11928651
申请日：2007-10-30
申请人： Claude Bertin , Thomas Rueckes , Brent Segal
发明人： Claude Bertin , Thomas Rueckes , Brent Segal
IPC分类号： G11C11/50
CPC分类号： H01L29/0665 , B82Y10/00 , G11C13/025 , G11C23/00 , H01H1/0094 , H01H1/027 , H01H2001/0005 , H01L27/28 , H01L29/0673 , H01L29/73 , H01L29/78 , H01L51/0048 , H01L51/0508 , Y10S977/94 , Y10S977/943
摘要： Nanotube-based switching elements and logic circuits. Under one embodiment of the invention, a switching element includes an input node, an output node, a nanotube channel element having at least one electrically conductive nanotube, and a control electrode. The control electrode is disposed in relation to the nanotube channel element to controllably form an electrically conductive channel between the input node and the output node. The channel at least includes said nanotube channel element. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node.
摘要翻译：基于纳米管的开关元件和逻辑电路。在本发明的一个实施例中，开关元件包括输入节点，输出节点，具有至少一个导电纳米管的纳米管通道元件和控制电极。控制电极相对于纳米管通道元件设置，以在输入节点和输出节点之间可控制地形成导电通道。通道至少包括所述纳米管通道元件。输出节点的构造和布置使得通道形成基本上不受输出节点的电气状态的影响。

14. 发明申请

US20070015303A1 Nanotube device structure and methods of fabrication 有权
标题翻译：纳米管器件结构及其制造方法
公开(公告)号：US20070015303A1
公开(公告)日：2007-01-18
申请号：US11449969
申请日：2006-06-09
申请人： Claude Bertin , Thomas Rueckes , Brent Segal
发明人： Claude Bertin , Thomas Rueckes , Brent Segal
IPC分类号： H01L21/00
CPC分类号： H01L29/0665 , B82Y10/00 , G11C13/025 , G11C23/00 , H01H1/0094 , H01H1/027 , H01H2001/0005 , H01L27/28 , H01L29/0673 , H01L29/73 , H01L29/78 , H01L51/0048 , H01L51/0508 , Y10S977/725 , Y10S977/733 , Y10S977/755 , Y10S977/938 , Y10T29/49105
摘要： Nanotube device structures and methods of fabrication. A method of making a nanotube switching element includes forming a first structure having at a first output electrode; forming second structure having a second output electrode; forming a conductive article having at least one nanotube, the article having first and second ends; positioning the conductive article between said first and second structures such that the first structure clamps the first and second ends of the article to the second structure, and such that the first and second output electrodes are opposite each other with the article positioned therebetween; providing at least one signal electrode in electrical communication with the conductive article; and providing at least one control electrode in spaced relation to the conductive article such that the control electrode may control the conductive article to form a conductive pathway between the signal electrode and the first output electrode.
摘要翻译：纳米管器件结构和制造方法。制造纳米管开关元件的方法包括：形成具有第一输出电极的第一结构; 形成具有第二输出电极的第二结构; 形成具有至少一个纳米管的导电制品，所述制品具有第一和第二端; 将导电制品定位在所述第一和第二结构之间，使得第一结构将制品的第一和第二端夹持到第二结构，并且使得第一和第二输出电极彼此相对，物品位于它们之间; 提供至少一个与所述导电制品电连通的信号电极; 以及提供与所述导电制品间隔开的至少一个控制电极，使得所述控制电极可以控制所述导电制品以在所述信号电极和所述第一输出电极之间形成导电路径。

15. 发明申请

US20050062062A1 One-time programmable, non-volatile field effect devices and methods of making same 失效
标题翻译：一次性可编程，非易失性场效应器件及其制作方法
公开(公告)号：US20050062062A1
公开(公告)日：2005-03-24
申请号：US10864572
申请日：2004-06-09
申请人： Claude Bertin , Thomas Rueckes , Brent Segal , Bernhard Vogeli , Darren Brock , Venkatachalam Jaiprakash
发明人： Claude Bertin , Thomas Rueckes , Brent Segal , Bernhard Vogeli , Darren Brock , Venkatachalam Jaiprakash
IPC分类号： G11C7/06 , G11C8/02 , G11C11/00 , G11C11/50 , G11C13/02 , G11C16/02 , G11C16/04 , G11C17/16 , G11C23/00 , H01H59/00 , H01J1/62 , H01L20060101 , H01L21/336 , H01L21/82 , H01L21/8246 , H01L27/112 , H01L27/115 , H01L27/28 , H01L29/06 , H01L29/423 , H01L29/739 , H01L29/745 , H01L29/76 , H01L51/00 , H01L51/05 , H01L51/30 , H03K17/16
CPC分类号： H01L29/78 , B82Y10/00 , B82Y99/00 , G11C7/065 , G11C13/025 , G11C16/0416 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/16 , G11C2213/17 , G11C2213/79 , H01H1/0094 , H01L27/10 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L27/115 , H01L27/286 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/0508 , Y10S977/708 , Y10S977/724 , Y10S977/742 , Y10S977/762 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： One-time programmable, non-volatile field effect devices and methods of making same. Under one embodiment, a one-time-programmable, non-volatile field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. Each of the source, drain, and gate has a corresponding terminal. An electromechanically-deflectable, nanotube switching element is electrically coupled to one of the source, drain and gate and has an electromechanically-deflectable nanotube element that is positioned to be deflectable in response to electrical stimulation to form a non-volatile closed electrical state between the one of the source, drain and gate and its corresponding terminal.
摘要翻译：一次性可编程，非易失性场效应器件及其制作方法。在一个实施例中，一次性可编程的非易失性场效应器件包括源极，漏极和栅极，源极和漏极之间具有场可调整通道。源极，漏极和栅极中的每一个具有相应的端子。电机械可偏转的纳米管开关元件电耦合到源极，漏极和栅极中的一个，并且具有可机电偏转的纳米管元件，其被定位成响应于电刺激而可偏转以在第二电极之间形成非易失性闭合电状态源，漏，门之一及其相应的终端。

16. 发明申请

US20050056877A1 Nanotube-on-gate fet structures and applications 有权
标题翻译：纳米管对门结构和应用
公开(公告)号：US20050056877A1
公开(公告)日：2005-03-17
申请号：US10811373
申请日：2004-03-26
申请人： Thomas Rueckes , Brent Segal , Bernhard Vogeli , Darren Brock , Venkatachalam Jaiprakash , Claude Bertin
发明人： Thomas Rueckes , Brent Segal , Bernhard Vogeli , Darren Brock , Venkatachalam Jaiprakash , Claude Bertin
IPC分类号： G11C13/02 , G11C16/04 , G11C23/00 , H01L27/108 , H01L29/06 , H01L29/423 , H01L29/76 , H01L29/94 , H01L31/119 , H01L51/00
CPC分类号： H01L51/055 , B82Y10/00 , G11C13/025 , G11C16/0416 , G11C23/00 , G11C2213/17 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052
摘要： Nanotube on gate FET structures and applications of such, including n2 crossbars requiring only 2n control lines. A non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and a channel region of a second semiconductor type of material disposed between the source and drain region. A gate structure is made of at least one of semiconductive or conductive material and is disposed over an insulator over the channel region. A control gate is made of at least one of semiconductive or conductive material. An electromechanically-deflectable nanotube switching element is in fixed contact with one of the gate structure and the control gate structure and is not in fixed contact with the other of the gate structure and the control gate structure. The device has a network of inherent capacitances, including an inherent capacitance of an undeflected nanotube switching element in relation to the gate structure. The network is such that the nanotube switching element is deflectable into contact with the other of the gate structure and the control gate structure in response to signals being applied to the control gate and one of the source region and drain region. Certain embodiments of the device have an area of about 4 F2. Other embodiments include a release line is positioned in spaced relation to the nanotube switching element, and having a horizontal orientation that is parallel to the orientation of the source and drain diffusions. Other embodiments provide an n2 crossbar array having n2 non-volatile transistor devices, but require only 2n control lines.
摘要翻译：纳米管栅极FET结构及其应用，包括仅需要2n条控制线的n <2条交叉点。非挥发性晶体管器件包括第一半导体类型的材料的源极区域和漏极区域以及设置在源极和漏极区域之间的第二半导体类型的材料的沟道区域。栅极结构由半导体或导电材料中的至少一种制成，并且设置在沟道区域上方的绝缘体上。控制门由半导体或导电材料中的至少一种制成。机电偏转型纳米管开关元件与栅极结构和控制栅极结构中的一个固定接触，并且不与栅极结构和控制栅极结构中的另一个固定接触。该器件具有固有电容的网络，包括相对于栅极结构的未折射的纳米管开关元件的固有电容。网络使得纳米管开关元件响应于施加到控制栅极和源极区域和漏极区域之一的信号而偏转成与栅极结构和控制栅极结构中的另一个接触。该装置的某些实施例具有约4F 2的面积。其他实施例包括释放线与纳米管开关元件间隔开定位，并且具有平行于源极和漏极扩散的取向的水平取向。其他实施例提供了具有n 2个非易失性晶体管器件的n <2>交叉开关阵列，但是仅需要2n个控制线。

17. 发明申请

US20050047244A1 Four terminal non-volatile transistor device 有权
标题翻译：四端子非易失性晶体管器件
公开(公告)号：US20050047244A1
公开(公告)日：2005-03-03
申请号：US10811191
申请日：2004-03-26
申请人： Thomas Rueckes , Brent Segal , Bernard Vogeli , Darren Brock , Venkatachalam Jaiprakash , Claude Bertin
发明人： Thomas Rueckes , Brent Segal , Bernard Vogeli , Darren Brock , Venkatachalam Jaiprakash , Claude Bertin
IPC分类号： G11C13/02 , G11C16/04 , G11C23/00 , H01L27/115 , H01L29/788 , G11C7/00
CPC分类号： G11C23/00 , B82Y10/00 , G11C13/025 , G11C16/0416 , G11C2213/17 , H01L27/115 , H01L29/7881 , Y10S977/708 , Y10S977/932
摘要： A four terminal non-volatile transistor device. A non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and each in electrical communication with a respective terminal. A channel region of a second semiconductor type of material is disposed between the source and drain region. A floating gate structure is made of at least one of semiconductive or conductive material and is disposed over the channel region. A control gate is made of at least one of semiconductive or conductive material and is in electrical communication with a respective terminal. An electromechanically-deflectable nanotube switching element is in electrical communication with one of the floating gate structure and the control gate structure, and is positioned to be electromechanically deflectable into contact with the other of the floating gate structure and the control gate structure. When the nanotube switching element is in communication with both the control gate and the floating gate, the control gate may be used to modulate the conductivity of the channel region. The nanotube switching element may be formed from a porous fabric of a monolayer of single-walled carbon nanotubes. Under certain embodiments, the nanotube article is suspended vertically in relation to the horizontal substrate. Under certain embodiments, a release gate and release node are positioned in spaced relation to the nanotube switching element, and, in response to a signal on the release node, the release gate electromechanically deflects the nanotube switching element out of contact with the one of the control gate and floating gate. Under certain embodiments, the contact between the nanotube switching element and the one of the control gate and floating gate is a non-volatile state. Under certain embodiments, the device occupies an area of 8F2.
摘要翻译：四端非易失性晶体管器件。非挥发性晶体管器件包括第一半导体类型的材料的源极区域和漏极区域，并且各自与相应的端子电连通。第二半导体类型的材料的沟道区域设置在源区和漏区之间。浮栅结构由半导体或导电材料中的至少一种制成，并且设置在沟道区域上。控制门由半导体或导电材料中的至少一种制成，并与相应的端子电连通。机电可偏转的纳米管开关元件与浮动栅极结构和控制栅极结构中的一个电连通，并且被定位成机电可偏转地与浮动栅极结构和控制栅极结构中的另一个接触。当纳米管开关元件与控制栅极和浮置栅极两者连通时，控制栅极可用于调制沟道区的导电性。纳米管切换元件可以由单壁碳纳米管单层的多孔织物形成。在某些实施例中，纳米管制品相对于水平基底垂直悬挂。在某些实施例中，释放栅极和释放节点以与纳米管开关元件隔开的关系定位，并且响应于释放节点上的信号，释放门电磁机械地使纳米管开关元件偏转与控制门和浮动门。在某些实施例中，纳米管开关元件与控制栅极和浮置栅极之间的接触是非易失性状态。在某些实施例中，该装置占据8F 2的面积。

18. 发明申请

US20050037547A1 Nanotube device structure and methods of fabrication 有权
标题翻译：纳米管器件结构及其制造方法
公开(公告)号：US20050037547A1
公开(公告)日：2005-02-17
申请号：US10918181
申请日：2004-08-13
申请人： Claude Bertin , Thomas Rueckes , Brent Segal
发明人： Claude Bertin , Thomas Rueckes , Brent Segal
IPC分类号： G11C13/02 , H01H1/027 , H01H59/00 , H01L21/00 , H01L27/28 , H01L29/06 , H01L29/73 , H01L29/78 , H01L51/30
CPC分类号： H01L29/0665 , B82Y10/00 , G11C13/025 , G11C23/00 , H01H1/0094 , H01H1/027 , H01H2001/0005 , H01L27/28 , H01L29/0673 , H01L29/73 , H01L29/78 , H01L51/0048 , H01L51/0508 , Y10S977/725 , Y10S977/733 , Y10S977/755 , Y10S977/938 , Y10T29/49105
摘要： Nanotube device structures and methods of fabrication. Under one embodiment, a method of forming a nanotube switching element includes forming a first structure having at least one output electrode, forming a conductive article having at least one nanotube, and forming a second structure having at least one output electrode and positioning said second structure in relation to the first structure and the conductive article such that the output electrode of the first structure is opposite the output electrode of the second structure and such that a portion of the conductive article is positioned therebetween. At least one signal electrode is provided in electrical communication with the conductive article having at least one nanotube, and at least one control electrode is provided in relation to the conductive article such that the conductive electrode may control the conductive article to form a channel between the sginal electrode and at least one of the output electrodes. The first and second structures each include a respective second output electrode and wherein the second electrodes are positioned opposite each other with the conductive article positioned therebetween. The control electrode and the second control electrode includes an insulator layer on a surface facing the conductive article.
摘要翻译：纳米管器件结构和制造方法。在一个实施例中，形成纳米管切换元件的方法包括形成具有至少一个输出电极的第一结构，形成具有至少一个纳米管的导电制品，并形成具有至少一个输出电极的第二结构，并且将所述第二结构相对于第一结构和导电制品，使得第一结构的输出电极与第二结构的输出电极相对，并且导电制品的一部分位于它们之间。提供至少一个信号电极与具有至少一个纳米管的导电制品电连通，并且相对于导电制品提供至少一个控制电极，使得导电电极可以控制导电制品以在导电制品之间形成通道电极和至少一个输出电极。第一和第二结构各自包括相应的第二输出电极，并且其中第二电极彼此相对定位，导电制品位于它们之间。控制电极和第二控制电极在面向导电物品的表面上包括绝缘体层。

19. 发明申请

US20050036365A1 NANOTUBE-BASED SWITCHING ELEMENTS WITH MULTIPLE CONTROLS 失效
标题翻译：基于纳米管的开关元件与多个控制
公开(公告)号：US20050036365A1
公开(公告)日：2005-02-17
申请号：US10918085
申请日：2004-08-13
申请人： Claude Bertin , Thomas Rueckes , Brent Segal
发明人： Claude Bertin , Thomas Rueckes , Brent Segal
IPC分类号： G11C11/00 , G11C11/21 , G11C11/50 , G11C13/02 , G11C23/00 , H01H1/027 , H01H59/00 , H01L21/00 , H01L27/28 , H01L29/06 , H01L29/73 , H01L29/772 , H01L29/78 , H01L51/30
CPC分类号： H01L29/0665 , B82Y10/00 , G11C13/025 , G11C23/00 , G11C2213/17 , H01H1/0094 , H01H1/027 , H01L27/28 , H01L29/0673 , H01L29/73 , H01L29/78 , H01L51/0048 , H01L51/0508 , Y10S977/708 , Y10S977/932 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Nanotube-based switching elements with multiple controls and circuits made from such. A switching element includes an input node, an output node, and a nanotube channel element having at least one electrically conductive nanotube. A control structure is disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between said input node and said output node. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node. The control structure includes a control electrode and a release electrode, disposed on opposite sides of the nanotube channel element. The control and release may be used to form a differential input, or if the device is constructed appropriately to operate the circuit in a non-volatile manner. The switching elements may be arranged into logic circuits and latches having differential inputs and/or non-volatile behavior depending on the construction.
摘要翻译：基于纳米管的开关元件具有由此制成的多个控制和电路。开关元件包括输入节点，输出节点和具有至少一个导电纳米管的纳米管通道元件。相对于纳米管通道元件设置控制结构，以可控地形成和取消所述输入节点和所述输出节点之间的导电通道。输出节点的构造和布置使得通道形成基本上不受输出节点的电气状态的影响。控制结构包括设置在纳米管通道元件的相对侧上的控制电极和释放电极。控制和释放可用于形成差分输入，或者如果该装置被适当地构造以以非易失性方式操作电路。根据结构，开关元件可以被布置成具有差分输入和/或非易失性行为的逻辑电路和锁存器。

20. 发明申请

US20050174842A1 EEPROMS using carbon nanotubes for cell storage 有权
标题翻译：使用碳纳米管进行细胞储存的EEPROMS
公开(公告)号：US20050174842A1
公开(公告)日：2005-08-11
申请号：US11053135
申请日：2005-02-08
申请人： Claude Bertin , Thomas Rueckes , Brent Segal
发明人： Claude Bertin , Thomas Rueckes , Brent Segal
IPC分类号： G11C11/34 , G11C13/02 , G11C16/04
CPC分类号： G11C13/025 , B82Y10/00 , G11C16/0416 , G11C23/00 , G11C2213/17 , G11C2213/79 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/055 , Y10S977/742 , Y10S977/943
摘要： EEPROMS Using Carbon Nanotubes for Cell Storage. An electrically erasable programmable read only memory (EEPROM) cell includes cell selection circuitry and a storage cell for storing the informational state of the cell. The storage cell is an electro-mechanical data retention cell in which the physical positional state of a storage cell element represents the informational state of the cell. The storage cell element is a carbon nanotube switching element. The storage is writable with supply voltages used by said cell selection circuitry. The storage is writable and readable via said selection circuitry with write times and read times being within an order of magnitude. The write times and read times are substantially the same. The storage has no charge storage or no charge trapping.
摘要翻译：使用碳纳米管进行细胞储存的方法。电可擦除可编程只读存储器（EEPROM）单元包括单元选择电路和用于存储单元的信息状态的存储单元。存储单元是机电数据保持单元，其中存储单元元件的物理位置状态表示单元的信息状态。存储单元元件是碳纳米管开关元件。存储器可由所述单元选择电路使用的电源电压写入。存储器是可写的并且可通过所述选择电路读取，写入时间和读取时间在一个数量级内。写入时间和读取时间基本相同。存储器没有电荷存储或没有电荷捕获。

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