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11. 发明申请

US20130292645A1 HIGH EFFICIENCY LIGHT EMITTING DIODE 有权
标题翻译：高效发光二极管
公开(公告)号：US20130292645A1
公开(公告)日：2013-11-07
申请号：US13997873
申请日：2011-12-06
申请人： Jun Ho Yun , Ki Bum Nam , Joon Hee Lee , Chang Youn Kim , Hong Jae Yoo , Sung Hoon Hong
发明人： Jun Ho Yun , Ki Bum Nam , Joon Hee Lee , Chang Youn Kim , Hong Jae Yoo , Sung Hoon Hong
IPC分类号： H01L33/14
CPC分类号： H01L33/14 , H01L33/0079 , H01L33/22 , H01L33/38 , H01L33/405 , H01L33/44
摘要： Disclosed herein is a high efficiency light emitting diode. The light emitting diode includes: a semiconductor stack positioned over a support substrate; a reflective metal layer positioned between the support substrate and the semiconductor stack to ohmic-contact a p-type compound semiconductor layer of the semiconductor stack and having a groove exposing the semiconductor stack; a first electrode pad positioned on an n-type compound semiconductor layer of the semiconductor stack; an electrode extension extending from the first electrode pad and positioned over the groove region; and an upper insulating layer interposed between the first electrode pad and the semiconductor stack. In addition, the n-type compound semiconductor layer includes an n-type contact layer, and the n-type contact layer has a Si doping concentration of 5 to 7×1018/cm3 and a thickness in the range of 5 to 10 um.
摘要翻译：本文公开了一种高效率发光二极管。发光二极管包括：位于支撑衬底上的半导体堆叠; 反射金属层，位于所述支撑基板和所述半导体堆叠之间，以与所述半导体堆叠的p型化合物半导体层欧姆接触并具有暴露所述半导体叠层的沟槽; 位于所述半导体叠层的n型化合物半导体层上的第一电极焊盘; 电极延伸部，其从所述第一电极焊盘延伸并定位在所述沟槽区域上; 以及介于所述第一电极焊盘和所述半导体堆叠之间的上绝缘层。此外，n型化合物半导体层包括n型接触层，n型接触层的Si掺杂浓度为5〜7×1018 / cm3，厚度为5〜10μm。

12. 发明授权

US08357924B2 Light emitting diode and method of fabricating the same 有权
公开(公告)号：US08357924B2
公开(公告)日：2013-01-22
申请号：US12983499
申请日：2011-01-03
申请人： Kwang Joong Kim , Chang Suk Han , Kyung Hee Ye , Seung Kyu Choi , Ki Bum Nam , Nam Yoon Kim , Kyung Hae Kim , Ju Hyung Yoon
发明人： Kwang Joong Kim , Chang Suk Han , Kyung Hee Ye , Seung Kyu Choi , Ki Bum Nam , Nam Yoon Kim , Kyung Hae Kim , Ju Hyung Yoon
IPC分类号： H01L31/00
CPC分类号： H01L33/06 , H01L21/0237 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L33/0025 , H01L33/007 , H01L33/025 , H01L33/04 , H01L33/32
摘要： Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.

13. 发明申请

US20130207147A1 UV LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：紫外线发光二极管及其制造方法
公开(公告)号：US20130207147A1
公开(公告)日：2013-08-15
申请号：US13816140
申请日：2011-01-18
申请人： Ki Bum Nam , Duck Hwan OH , Won Cheol Seo
发明人： Ki Bum Nam , Duck Hwan OH , Won Cheol Seo
IPC分类号： H01L33/10
CPC分类号： H01L33/10 , H01L33/20 , H01L33/32 , H01L33/46 , H01L2933/0083
摘要： The present disclosure provides a UV light emitting diode and a method of manufacturing the same. The UV light emitting diode includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer sequentially formed on a substrate, an electrode formed on the second conductive type semiconductor layer, and an opening formed by removing at least portions of the first conductive type semiconductor layer, the active layer, the second conductive type semiconductor layer, the reflective structure and the transparent electrode to expose a portion of the first conductive type semiconductor layer therethrough. In the UV light emitting diode, UV light is emitted from the active layer, passes through the opening, and then travels outside.
摘要翻译：本公开提供了一种UV发光二极管及其制造方法。 UV发光二极管包括依次形成在基板上的第一导电型半导体层，有源层和形成在第二导电型半导体层上的电极的第二导电型半导体层，以及形成在第二导电型半导体层上的至少部分第一导电型半导体层，有源层，第二导电类型半导体层，反射结构和透明电极，以暴露第一导电类型半导体层的一部分。在UV发光二极管中，紫外光从有源层发射，穿过开口，然后向外传播。

14. 发明授权

US08470697B2 Method of forming p-type compound semiconductor layer 有权
标题翻译：形成p型化合物半导体层的方法
公开(公告)号：US08470697B2
公开(公告)日：2013-06-25
申请号：US12560891
申请日：2009-09-16
申请人： Ki Bum Nam , Hwa Mok Kim , James S. Speck
发明人： Ki Bum Nam , Hwa Mok Kim , James S. Speck
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , H01L21/0254 , H01L21/02579 , H01L21/0262
摘要： A method of forming a p-type compound semiconductor layer includes increasing a temperature of a substrate loaded into a reaction chamber to a first temperature. A source gas of a Group III element, a source gas of a p-type impurity, and a source gas of nitrogen containing hydrogen are supplied into the reaction chamber to grow the p-type compound semiconductor layer. Then, the supply of the source gas of the Group III element and the source gas of the p-type impurity is stopped and the temperature of the substrate is lowered to a second temperature. The supply of the source gas of nitrogen containing hydrogen is stopped and drawn out at the second temperature, and the temperature of the substrate is lowered to room temperature using a cooling gas. Accordingly, hydrogen is prevented from bonding to the p-type impurity in the p-type compound semiconductor layer.
摘要翻译：形成p型化合物半导体层的方法包括将装载到反应室中的基板的温度升高到第一温度。将III族元素的源气体，p型杂质的源气体和含氮气的源气体供给到反应室中以使p型化合物半导体层生长。然后，停止供给III族元素的源气体和p型杂质的源气体，并将基板的温度降低到第二温度。供给含氮氢气的源气体在第二温度下停止并排出，并且使用冷却气体将基板的温度降至室温。因此，防止氢与p型化合物半导体层中的p型杂质结合。

15. 发明申请

US20090163002A1 METHOD OF FORMING P-TYPE COMPOUND SEMICONDUCTOR LAYER 有权
标题翻译：形成P型复合半导体层的方法
公开(公告)号：US20090163002A1
公开(公告)日：2009-06-25
申请号：US12090305
申请日：2007-06-29
申请人： Ki Bum Nam , Hwa Mok Kim , James S. Speck
发明人： Ki Bum Nam , Hwa Mok Kim , James S. Speck
IPC分类号： H01L21/22
CPC分类号： H01L33/007 , H01L21/0254 , H01L21/02579 , H01L21/0262
摘要： A method of forming a p-type compound semiconductor layer includes increasing a temperature of a substrate loaded into a reaction chamber to a first temperature. A source gas of a Group III element, a source gas of a p-type impurity, and a source gas of nitrogen containing hydrogen are supplied into the reaction chamber to grow the p-type compound semiconductor layer. Then, the supply of the source gas of the Group III element and the source gas of the p-type impurity is stopped and the temperature of the substrate is lowered to a second temperature. The supply of the source gas of nitrogen containing hydrogen is stopped and drawn out at the second temperature, and the temperature of the substrate is lowered to room temperature using a cooling gas. Accordingly, hydrogen is prevented from bonding to the p-type impurity in the p-type compound semiconductor layer.
摘要翻译：形成p型化合物半导体层的方法包括将装载到反应室中的基板的温度升高到第一温度。将III族元素的源气体，p型杂质的源气体和含氮气的源气体供给到反应室中以使p型化合物半导体层生长。然后，停止供给III族元素的源气体和p型杂质的源气体，并将基板的温度降低到第二温度。供给含氮氢气的源气体在第二温度下停止并排出，并且使用冷却气体将基板的温度降至室温。因此，防止氢与p型化合物半导体层中的p型杂质结合。

16. 发明申请

US20140319553A1 LIGHT EMITTING DEVICE FOR HIGH CURRENT OPERATION 审中-公开
标题翻译：用于高电流操作的发光装置
公开(公告)号：US20140319553A1
公开(公告)日：2014-10-30
申请号：US14240996
申请日：2012-08-22
申请人： Kyung Hee Ye , Dae Sung Cho , Ki Bum Nam
发明人： Kyung Hee Ye , Dae Sung Cho , Ki Bum Nam
IPC分类号： H01L33/50 , H01L33/58 , H01L27/15
CPC分类号： H01L33/504 , F21K9/237 , F21K9/64 , F21V29/89 , F21Y2101/00 , F21Y2105/10 , F21Y2115/10 , G02B5/283 , H01L25/0753 , H01L27/15 , H01L33/0004 , H01L33/46 , H01L33/50 , H01L33/507 , H01L33/58 , H01L33/60 , H01L2924/0002 , H05B33/0857 , H01L2924/00
摘要： Disclosed is a light-emitting element for high-current drive. The light-emitting element comprises: a light-emitting diode chip which emits ultraviolet light; and a wavelength conversion layer which converts the wavelength of the ultraviolet light emitted from the light-emitting diode chip into visible light. The light-emitting diode chip is driven at a current density of at least 150 A/cm2.
摘要翻译：公开了一种用于高电流驱动的发光元件。发光元件包括：发射紫外光的发光二极管芯片; 以及波长转换层，其将从发光二极管芯片发射的紫外光的波长转换成可见光。以至少150A / cm 2的电流密度驱动发光二极管芯片。

17. 发明授权

US08470626B2 Method of fabricating light emitting diode 有权
标题翻译：制造发光二极管的方法
公开(公告)号：US08470626B2
公开(公告)日：2013-06-25
申请号：US13150759
申请日：2011-06-01
申请人： Kwang Joong Kim , Chang Suk Han , Seung Kyu Choi , Ki Bum Nam , Nam Yoon Kim , Kyung Hae Kim , Ju Hyung Yoon
发明人： Kwang Joong Kim , Chang Suk Han , Seung Kyu Choi , Ki Bum Nam , Nam Yoon Kim , Kyung Hae Kim , Ju Hyung Yoon
IPC分类号： H01L21/00
CPC分类号： H01L33/007
摘要： Exemplary embodiments of the present invention relate to a method of fabricating a light emitting diode (LED). According to an exemplary embodiment of the present invention, the method includes growing a first GaN-based semiconductor layer on a substrate at a first temperature by supplying a chamber with a nitride source gas and a first metal source gas, stopping the supply of the first metal source gas and maintaining the first temperature for a first time period after stopping the supply of the first metal source gas, decreasing the temperature of the substrate to the a second temperature after the first time period elapses, growing an active layer of the first GaN-based semiconductor layer at the second temperature by supplying the chamber with a second metal source gas.
摘要翻译：本发明的示例性实施例涉及一种制造发光二极管（LED）的方法。根据本发明的示例性实施例，该方法包括通过向室提供氮化物源气体和第一金属源气体，在第一温度下在衬底上生长第一GaN基半导体层，停止第一金属源气体，并且在停止第一金属源气体的供给之后保持第一温度第一温度，在第一时间段之后将衬底的温度降低到第二温度，生长第一GaN的有源层在第二温度下通过向腔室供应第二金属源气体。

18. 发明授权

US07994539B2 Light emitting diode having algan buffer layer and method of fabricating the same 有权
标题翻译：具有阴离子缓冲层的发光二极管及其制造方法
公开(公告)号：US07994539B2
公开(公告)日：2011-08-09
申请号：US12571981
申请日：2009-10-01
申请人： Ki Bum Nam
发明人： Ki Bum Nam
IPC分类号： H01L21/02
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0251 , H01L21/0254 , H01L21/0262 , H01L33/12
摘要： The present invention relates to a light emitting diode having an AlxGa1−xN buffer layer and a method of fabricating the same, and more particularly, to a light emitting diode having an AlxGa1−xN buffer layer, wherein between a substrate and a GaN-based semiconductor layer, the AlxGa1−xN (0≦x≦1) buffer layer having the composition ratio x of Al decreasing from the substrate to the GaN-based semiconductor layer is interposed to reduce lattice mismatch between the substrate and the GaN-based semiconductor layer, and a method of fabricating the same. To this end, the present invention provides a light emitting diode comprising a substrate; a first conductive semiconductor layer positioned on the substrate; and an AlxGa1−xN (0≦x≦1) buffer layer interposed between the substrate and the first conductive semiconductor layer and having a composition ratio x of Al decreasing from the substrate to the first conductive semiconductor layer.
摘要翻译：本发明涉及具有Al x Ga 1-x N缓冲层的发光二极管及其制造方法，更具体地说，涉及具有Al x Ga 1-x N缓冲层的发光二极管，其中在基板和GaN基半导体层插入从衬底到GaN基半导体层的组成比为x的Al的Al x Ga 1-x N（0＆nlE; x＆lt; 1; 1）缓冲层以减小衬底和GaN基半导体层之间的晶格失配，及其制造方法。为此，本发明提供一种包括基板的发光二极管; 位于所述基板上的第一导电半导体层; 以及插入在所述基板和所述第一导电半导体层之间并且从所述基板向所述第一导电半导体层的组成比x为Al的Al x Ga 1-x N（0和n 1; x 1; n 1; 1）缓冲层。

19. 发明授权

US07682953B2 Method of forming p-type compound semiconductor layer 有权
标题翻译：形成p型化合物半导体层的方法
公开(公告)号：US07682953B2
公开(公告)日：2010-03-23
申请号：US12090305
申请日：2007-06-29
申请人： Ki Bum Nam , Hwa Mok Kim , James S. Speck
发明人： Ki Bum Nam , Hwa Mok Kim , James S. Speck
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , H01L21/0254 , H01L21/02579 , H01L21/0262
摘要： A method of forming a p-type compound semiconductor layer includes increasing a temperature of a substrate loaded into a reaction chamber to a first temperature. A source gas of a Group III element, a source gas of a p-type impurity, and a source gas of nitrogen containing hydrogen are supplied into the reaction chamber to grow the p-type compound semiconductor layer. Then, the supply of the source gas of the Group III element and the source gas of the p-type impurity is stopped and the temperature of the substrate is lowered to a second temperature. The supply of the source gas of nitrogen containing hydrogen is stopped and drawn out at the second temperature, and the temperature of the substrate is lowered to room temperature using a cooling gas. Accordingly, hydrogen is prevented from bonding to the p-type impurity in the p-type compound semiconductor layer.
摘要翻译：形成p型化合物半导体层的方法包括将装载到反应室中的基板的温度升高到第一温度。将III族元素的源气体，p型杂质的源气体和含氮气的源气体供给到反应室中以使p型化合物半导体层生长。然后，停止供给III族元素的源气体和p型杂质的源气体，并将基板的温度降低到第二温度。供给含氮氢气的源气体在第二温度下停止并排出，并且使用冷却气体将基板的温度降至室温。因此，防止氢与p型化合物半导体层中的p型杂质结合。

20. 发明申请

US20090032833A1 LIGHT EMITTING DIODE HAVING ALGAN BUFFER LAYER AND METHOD OF FABRICATING THE SAME 有权
标题翻译：具有ALGAN缓冲层的发光二极管及其制造方法
公开(公告)号：US20090032833A1
公开(公告)日：2009-02-05
申请号：US12090047
申请日：2007-03-09
申请人： Ki Bum Nam
发明人： Ki Bum Nam
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0251 , H01L21/0254 , H01L21/0262 , H01L33/12
摘要： The present invention relates to a light emitting diode having an AlxGa1-xN buffer layer and a method of fabricating the same, and more particularly, to a light emitting diode having an AlxGa1-xN buffer layer, wherein between a substrate and a GaN-based semiconductor layer, the Al x Ga 1-x N (O≦x≦1) buffer layer having the composition ratio x of Al decreasing from the substrate to the GaN-based semiconductor layer is interposed to reduce lattice mismatch between the substrate and the GaN-based semiconductor layer, and a method of fabricating the same. To this end, the present invention provides a light emitting diode comprising a substrate; a first conductive semiconductor layer positioned on the substrate; and an AlxGa1-xN (O≦x≦1) buffer layer interposed between the substrate and the first conductive semiconductor layer and having a composition ratio x of Al decreasing from the substrate to the first conductive semiconductor layer.
摘要翻译：本发明涉及具有Al x Ga 1-x N缓冲层的发光二极管及其制造方法，更具体地说，涉及具有Al x Ga 1-x N缓冲层的发光二极管，其中在基板和GaN基半导体层，插入从衬底到GaN基半导体层的组成比x为Al的Al x Ga 1-x N（O <= x <= 1）缓冲层，以减小衬底和GaN基半导体层之间的晶格失配 GaN基半导体层及其制造方法。为此，本发明提供一种包括基板的发光二极管; 位于所述基板上的第一导电半导体层; 以及插入在所述基板和所述第一导电半导体层之间并且从所述基板向所述第一导电半导体层的组成比x为Al的Al x Ga 1-x N（O <= x <= 1）缓冲层。

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