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11. 发明授权

US06975754B2 Circuit pattern inspection method and apparatus 有权
标题翻译：电路图形检查方法和装置
公开(公告)号：US06975754B2
公开(公告)日：2005-12-13
申请号：US09802693
申请日：2001-03-08
申请人： Takashi Hiroi , Masahiro Watanabe , Chie Shishido , Asahiro Kuni , Maki Tanaka , Hiroshi Miyai , Yasuhiko Nara , Mari Nozoe
发明人： Takashi Hiroi , Masahiro Watanabe , Chie Shishido , Asahiro Kuni , Maki Tanaka , Hiroshi Miyai , Yasuhiko Nara , Mari Nozoe
IPC分类号： G01N21/956 , G06T7/00 , G06K9/00
CPC分类号： G06T7/001 , G01N21/95607 , G01N2021/95615 , G06T2207/10056 , G06T2207/30148
摘要： The present invention provides techniques, including a method and system, for inspecting for defects in a circuit pattern on a semi-conductor material. One specific embodiment provides a trial inspection threshold setup method, where the initial threshold is modified after a defect analysis of trial inspection stored data. The modified threshold is then used as the threshold in actual inspection.
摘要翻译：本发明提供了用于检查半导体材料上的电路图案中的缺陷的方法和系统的技术。一个具体实施例提供了一种试验检查阈值设置方法，其中初始阈值在试验检查存储数据的缺陷分析之后被修改。然后将修改的阈值用作实际检查中的阈值。

12. 发明申请

US20050016682A1 Method of setting etching parameters and system therefor 审中-公开
标题翻译：设置蚀刻参数及其系统的方法
公开(公告)号：US20050016682A1
公开(公告)日：2005-01-27
申请号：US10893275
申请日：2004-07-19
申请人： Wataru Nagatomo , Ryo Nakagaki , Maki Tanaka , Chie Shishido , Yuji Takagi
发明人： Wataru Nagatomo , Ryo Nakagaki , Maki Tanaka , Chie Shishido , Yuji Takagi
IPC分类号： H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/66 , C23F1/00
CPC分类号： H01L22/20 , H01L21/31116 , H01L21/32136 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a system that automatically calculates optimal etching parameters in order to perform desired etching in an etching process in semiconductor manufacturing. A model representing etching parameters and an etching performance quantitative value at the time when etching is performed with the etching parameters is prepared in advance, and when desired etching is performed, optimal etching parameters are calculated from the model.
摘要翻译：本发明涉及一种在半导体制造中在蚀刻工艺中自动计算最佳蚀刻参数以执行所需蚀刻的系统。预先准备表示蚀刻参数的模型和使用蚀刻参数进行蚀刻时的蚀刻性能定量值，并且当需要蚀刻时，根据该模型计算最佳蚀刻参数。

13. 发明授权

US08481936B2 Scanning electron microscope system and method for measuring dimensions of patterns formed on semiconductor device by using the system 有权
标题翻译：扫描电子显微镜系统和通过使用该系统测量在半导体器件上形成的图案的尺寸的方法
公开(公告)号：US08481936B2
公开(公告)日：2013-07-09
申请号：US13348813
申请日：2012-01-12
申请人： Chie Shishido , Maki Tanaka , Atsushi Miyamoto
发明人： Chie Shishido , Maki Tanaka , Atsushi Miyamoto
IPC分类号： H01J37/26
CPC分类号： G03F1/84 , G03F1/86 , G03F7/70625
摘要： The present invention is for providing a scanning electron microscope system adapted to output contour information fitting in with the real pattern edge end of a sample, and is arranged to generate a local projection waveform by projecting the scanning electron microscope image in the tangential direction with respect to the pattern edge at each point of the pattern edge of the scanning electron microscope image, estimate the cross-sectional shape of the pattern transferred on the sample by applying the local projection waveform generated at each point to a library, which has previously been created, correlating the cross-sectional shape with the electron beam signal waveform, obtain position coordinate of the edge end fitting in with the cross-sectional shape, and output the contour of the pattern as a range of position coordinates.
摘要翻译：本发明提供一种扫描电子显微镜系统，其适于输出与样品的实际图案边缘端相匹配的轮廓信息，并且被布置成通过相对于扫描电子显微镜图像沿切线方向投影而产生局部投影波形到扫描电子显微镜图像的图案边缘的每个点处的图案边缘，通过将在每个点处生成的局部投影波形应用到先前已经创建的库来估计在样本上传送的图案的横截面形状将横截面形状与电子束信号波形相关联，以横截面形状获得边缘端配件的位置坐标，并将图案的轮廓作为位置坐标的范围输出。

14. 发明申请

US20120151428A1 Pattern Shape Estimation Method and Pattern Measuring Device 有权
标题翻译：图案形状估计方法和图案测量装置
公开(公告)号：US20120151428A1
公开(公告)日：2012-06-14
申请号：US13390354
申请日：2010-07-15
申请人： Maki Tanaka , Norio Hasegawa , Chie Shishido , Mayuka Osaki
发明人： Maki Tanaka , Norio Hasegawa , Chie Shishido , Mayuka Osaki
IPC分类号： G06F17/50
CPC分类号： G01B15/04 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： The present invention aims at proposing a library creation method and a pattern shape estimation method in which it is possible, when estimating a shape based on comparison between an actual waveform and a library, to appropriately estimate the shape.As an illustrative embodiment to achieve the object, there are proposed a method of selecting a pattern by referring to a library, a method of creating a library by use of pattern cross-sectional shapes calculated through an exposure process simulation in advance, and a method for selecting a pattern shape stored in the library.
摘要翻译：本发明旨在提出一种库创建方法和图案形状估计方法，其中当基于实际波形和库之间的比较来估计形状时，可以适当地估计形状。作为实现该目的的说明性实施例，提出了通过参照库来选择图案的方法，通过使用预先通过曝光处理模拟计算的图案横截面形状来创建库的方法，以及方法用于选择存储在库中的图案形状。

15. 发明申请

US20120112067A1 SCANNING ELECTRON MICROSCOPE SYSTEM AND METHOD FOR MEASURING DIMENSIONS OF PATTERNS FORMED ON SEMICONDUCTOR DEVICE BY USING THE SYSTEM 有权
标题翻译：扫描电子显微镜系统和通过使用系统测量形成在半导体器件上的图案尺寸的方法
公开(公告)号：US20120112067A1
公开(公告)日：2012-05-10
申请号：US13348813
申请日：2012-01-12
申请人： Chie Shishido , Maki Tanaka , Atsushi Miyamoto
发明人： Chie Shishido , Maki Tanaka , Atsushi Miyamoto
IPC分类号： H01J37/28
CPC分类号： G03F1/84 , G03F1/86 , G03F7/70625
摘要： The present invention is for providing a scanning electron microscope system adapted to output contour information fitting in with the real pattern edge end of a sample, and is arranged to generate a local projection waveform by projecting the scanning electron microscope image in the tangential direction with respect to the pattern edge at each point of the pattern edge of the scanning electron microscope image, estimate the cross-sectional shape of the pattern transferred on the sample by applying the local projection waveform generated at each point to a library, which has previously been created, correlating the cross-sectional shape with the electron beam signal waveform, obtain position coordinate of the edge end fitting in with the cross-sectional shape, and output the contour of the pattern as a range of position coordinates.
摘要翻译：本发明提供一种扫描电子显微镜系统，其适于输出与样品的实际图案边缘端相匹配的轮廓信息，并且被布置成通过相对于扫描电子显微镜图像沿切线方向投影而产生局部投影波形到扫描电子显微镜图像的图案边缘的每个点处的图案边缘，通过将在每个点处生成的局部投影波形应用到先前已经创建的库来估计在样本上传送的图案的横截面形状将横截面形状与电子束信号波形相关联，以横截面形状获得边缘端配件的位置坐标，并将图案的轮廓作为位置坐标的范围输出。

16. 发明申请

US20100133426A1 Sample and method for evaluating resolution of scanning electron microscope, and electron scanning microscope 有权
标题翻译：扫描电子显微镜和电子扫描显微镜的分辨率评估样本和方法
公开(公告)号：US20100133426A1
公开(公告)日：2010-06-03
申请号：US12588517
申请日：2009-10-19
申请人： Mayuka Oosaki , Chie Shishido , Maki Tanaka , Hiroki Kawada
发明人： Mayuka Oosaki , Chie Shishido , Maki Tanaka , Hiroki Kawada
IPC分类号： G01D18/00 , G01N23/00
CPC分类号： G01N23/225 , H01J2237/2823
摘要： A method of evaluating a resolution of a scanning electron microscope includes picking up a first image of a concave and convex pattern formed on a surface of a sample utilizing a first scanning electron microscope, picking up a second image of the concave and convex pattern on the sample utilizing a second scanning electron microscope, respectively processing the first image and the second image in order to evaluate unevenness in resolution between the first scanning electron microscope and the second scanning electron microscope, and determining whether a height of the concave and convex pattern as measured from a bottom thereof is sufficient so that no affection by a secondary electron emitted from the bottom of the concave and convex pattern is exhibited.
摘要翻译：评价扫描型电子显微镜的分辨率的方法包括利用第一扫描电子显微镜拾取形成在样品表面上的凹凸图案的第一图像，在第二图像上拾取凹凸图案的第二图像分别处理第一图像和第二图像以评估第一扫描电子显微镜和第二扫描电子显微镜之间的分辨率的不均匀性，以及确定测量的凹凸图案的高度是否为第二扫描电子显微镜从底部开始就足够了，从而不会发生由凹凸图案的底部发射的二次电子的影响。

17. 发明申请

US20080063257A1 Pattern Inspection Method And Apparatus 有权
标题翻译：图案检验方法及装置
公开(公告)号：US20080063257A1
公开(公告)日：2008-03-13
申请号：US11931693
申请日：2007-10-31
申请人： Takashi HIROI , Masahiro Watanabe , Chie Shishido , Aritoshi Sugimoto , Maki Tanaka , Hiroshi Miyai , Asahiro Kuni , Yasuhiko Nara
发明人： Takashi HIROI , Masahiro Watanabe , Chie Shishido , Aritoshi Sugimoto , Maki Tanaka , Hiroshi Miyai , Asahiro Kuni , Yasuhiko Nara
IPC分类号： G06K9/00
CPC分类号： G01N21/9501 , G01N21/956 , G01N2021/8854 , G01N2021/8861 , G01N2021/8864 , G01R31/311 , G03F1/86 , G06T1/0007 , G06T7/0002 , G06T7/001 , G06T2200/24 , G06T2207/10061 , G06T2207/30148 , H01J37/222 , H01J37/265 , H01J37/28 , H01J2237/221 , H01J2237/24592 , H01J2237/28
摘要： An apparatus for processing a defect candidate image, including: an imager for taking an enlarged image of a specimen; an image processor for processing the image taken by the imager to detect defect candidates existing on the specimen and classify the detected defect candidates into one of plural defect classes; a memory for storing information of the defect candidates including the images of the defect candidates and the classified defect class data outputted from the image processor; and a display unit having a display screen for displaying information stored in the memory, wherein the display unit displays an image of the defect candidates together with the defect class data stored in the memory and the displayed defect class data is changeable on the display screen, and the memory changes the stored defect class data of the displayed defect candidate to the changed defect class data.
摘要翻译：一种用于处理缺陷候选图像的装置，包括：用于拍摄样本的放大图像的成像器; 图像处理器，用于处理由成像器拍摄的图像以检测存在于样本上的缺陷候选，并将检测到的缺陷候选分类为多个缺陷类别中的一个; 存储器，用于存储包括缺陷候选图像和从图像处理器输出的分类缺陷类别数据的缺陷候选的信息; 以及显示单元，具有用于显示存储在存储器中的信息的显示屏幕，其中所述显示单元与存储在存储器中的缺陷类别数据一起显示缺陷候选的图像，并且显示的缺陷类别数据可在显示屏幕上变化，并且存储器将存储的缺陷候选的缺陷类别数据改变为改变的缺陷类别数据。

18. 发明申请

US20060108526A1 Apparatus for measuring a three-dimensional shape 有权
标题翻译：用于测量三维形状的装置
公开(公告)号：US20060108526A1
公开(公告)日：2006-05-25
申请号：US11320752
申请日：2005-12-30
申请人： Maki Tanaka , Chie Shishido , Yuji Takagi
发明人： Maki Tanaka , Chie Shishido , Yuji Takagi
IPC分类号： G21K7/00
CPC分类号： G01N23/225 , G01N23/2251 , H01J37/244 , H01J37/3171 , H01J2237/2814 , H01L21/32137 , H01L22/10 , H01L2924/0002 , H01L2924/00
摘要： Conventionally, there is no method for quantitatively evaluating the three-dimensional shape of an etched pattern in a non-destructive manner and it takes much time and costs to determine etching conditions. With the conventional length measuring method only, it has been impossible to detect an abnormality in the three-dimensional shape and also difficult to control the etching process. According to the present invention, variations in signal amounts of an SEM image are utilized to compute three-dimensional shape data on the pattern associated with the etching process steps, whereby the three-dimensional shape is quantitatively evaluated. Besides, determination of etching process conditions and process control are performed based on the three-dimensional shape data obtained. The present invention makes it is possible to quantitatively evaluate the three-dimensional shape of the etched pattern in a non-destructive manner. Further, the efficiency of determining the etching process conditions and a stable etching process can be realized.
摘要翻译：通常，没有以非破坏性的方式定量地评价蚀刻图案的三维形状的方法，并且确定蚀刻条件需要花费大量时间和成本。仅使用常规的长度测量方法，就不可能检测到三维形状的异常，并且也难以控制蚀刻工艺。根据本发明，利用SEM图像的信号量的变化来计算与蚀刻工艺步骤相关联的图案上的三维形状数据，从而定量评估三维形状。此外，基于获得的三维形状数据进行蚀刻工艺条件和工艺控制的确定。本发明能够以非破坏性的方式对蚀刻图案的三维形状进行定量评价。此外，可以实现确定蚀刻工艺条件的效率和稳定的蚀刻工艺。

19. 发明授权

US06929892B2 Method of monitoring an exposure process 有权
标题翻译：监测曝光过程的方法
公开(公告)号：US06929892B2
公开(公告)日：2005-08-16
申请号：US10894044
申请日：2004-07-20
申请人： Chie Shishido , Hidetoshi Morokuma , Yuki Ojima , Maki Tanaka , Wataru Nagatomo
发明人： Chie Shishido , Hidetoshi Morokuma , Yuki Ojima , Maki Tanaka , Wataru Nagatomo
IPC分类号： H01L21/66 , G03C5/00 , G03F7/20 , G03F9/00 , H01L21/027
CPC分类号： G03F7/70641 , G03F7/705 , G03F7/70625 , Y10S430/143
摘要： In monitoring of an exposure process, a highly isolative pattern greatly changed in a shape of cross section by fluctuations in the exposure dose and the focal position is an observation target. Especially, to detect a change in a resist shape of cross section from a tapered profile to an inverse tapered profile, one of the following observation methods is employed to obtain observation data: (1) a tilt image of a resist pattern is imaged by using tilt imaging electron microscopy, (2) an electron beam image of a resist pattern is imaged under imaging conditions for generating asymmetry on an electron beam signal waveform, and (3) scattering characteristic data of a resist pattern is obtained by an optical measurement system. The observation data is applied to model data created beforehand in accordance with the exposure conditions to estimate fluctuations in the exposure dose and the focal position.
摘要翻译：在曝光处理的监视中，通过曝光剂量的波动，焦点位置的横截面形状大幅度变化的高度隔离图案是观察对象。特别地，为了检测从锥形轮廓到逆锥形轮廓的截面抗蚀剂形状的变化，采用以下观察方法之一来获得观察数据：（1）通过使用抗蚀剂图案的倾斜图像成像倾斜成像电子显微镜，（2）抗蚀剂图案的电子束图像在用于在电子束信号波形上产生不对称的成像条件下成像，并且（3）通过光学测量系统获得抗蚀剂图案的散射特性数据。将观测数据应用于根据曝光条件预先创建的模型数据，以估计曝光剂量和焦点位置的波动。

20. 发明申请

US20050116182A1 Method of measuring pattern dimension and method of controlling semiconductor device process 有权
标题翻译：测量图案尺寸的方法和半导体器件工艺的控制方法
公开(公告)号：US20050116182A1
公开(公告)日：2005-06-02
申请号：US10986910
申请日：2004-11-15
申请人： Maki Tanaka , Hidetoshi Morokuma , Chie Shishido , Yuji Takagi
发明人： Maki Tanaka , Hidetoshi Morokuma , Chie Shishido , Yuji Takagi
IPC分类号： G01B15/00 , G01B11/14 , G01N23/225 , H01J37/28 , H01J37/304 , H01L21/66
CPC分类号： H01J37/28 , H01J37/304 , H01J2237/2814 , H01J2237/2817 , H01J2237/30455
摘要： This invention provides a method of measuring semiconductor pattern dimensions capable of realizing a stable and highly precise pattern dimension measurement technique even when the pattern cross-sectional shapes are changed and making the calculation amount relatively small to reduce the calculation time. More specifically, the relationship between cross-sectional shapes of a pattern and measurement errors in a specified image processing technique is evaluated in advance by the electron beam simulation in a pattern measurement system in a length measuring SEM, and in the actual dimension measurement, dimensions of an evaluation objective pattern are measured from image signals of a scanning electron microscope, and errors of the dimensional measurement of the evaluation objective pattern are estimated and revised based on the relationship between cross-sectional shapes of a pattern and measurement errors evaluated in advance, thereby realizing highly precise measurement where dimensional errors depending on pattern solid shapes are eliminated.
摘要翻译：本发明提供一种测量半导体图案尺寸的方法，即使当图案截面形状改变并使计算量相对较小以减少计算时间时，也能够实现稳定且高度精确的图案尺寸测量技术。更具体地说，通过长度测量SEM中的图案测量系统中的电子束模拟预先评估图案的截面形状与特定图像处理技术中的测量误差之间的关系，并且在实际尺寸测量中，尺寸根据扫描电子显微镜的图像信号测量评价对象图案，并且基于预先评估的图案的截面形状和测量误差之间的关系来估计和修正评估对象图案的尺寸测量的误差，从而实现高精度测量，其中取消了取决于图形实心形状的尺寸误差。

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