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    • 12. 发明授权
    • Memory device and memory system comprising same
    • 包含其的存储器件和存储器系统
    • US08473694B2
    • 2013-06-25
    • US12885728
    • 2010-09-20
    • Dong-Hyuk LeeJung-Bae LeeKi-Won Park
    • Dong-Hyuk LeeJung-Bae LeeKi-Won Park
    • G06F12/00
    • G11C29/08G11C11/401
    • A memory device comprises a memory cell array comprising a plurality of memory blocks each comprising a plurality of memory cells and a control setting circuit. The control setting circuit divides the memory blocks into at least first and second groups based on whether each of the memory blocks comprises at least one substandard memory cell, and sets individually control parameters of the first and second groups. The substandard memory cells are identified based on test results of the memory cells with respect to at least one of the control parameters. Each memory block in the first group comprises at least one substandard memory cell, and each memory block in the second group comprises no substandard memory cell.
    • 存储器装置包括存储单元阵列,其包括多个存储块,每个存储块包括多个存储单元和控制设置电路。 控制设置电路基于每个存储器块是否包括至少一个不合标准的存储器单元,将存储器块分成至少第一组和第二组,并且分别设置第一组和第二组的控制参数。 基于存储器单元相对于至少一个控制参数的测试结果来识别不合格存储器单元。 第一组中的每个存储器块包括至少一个不合标准存储器单元,并且第二组中的每个存储器块都不包括不合格存储器单元。
    • 13. 发明授权
    • Multiprocessor system and method thereof
    • 多处理器系统及其方法
    • US07870326B2
    • 2011-01-11
    • US11819601
    • 2007-06-28
    • Yun-Hee ShinHan-Gu SohnYoung-Min LeeHo-Cheol LeeSoo-Young KimDong-Hyuk LeeChang-Ho Lee
    • Yun-Hee ShinHan-Gu SohnYoung-Min LeeHo-Cheol LeeSoo-Young KimDong-Hyuk LeeChang-Ho Lee
    • G06F12/00
    • G06F12/02
    • A multiprocessor system and method thereof are provided. The example multiprocessor system may include first and second processors, a dynamic random access memory having a memory cell array, the memory cell array including a first memory bank coupled to the first processor through a first port, second and fourth memory banks coupled to the second processor through a second port, and a third memory bank shared and connected with the first and second processors through the first and second ports, and a bank address assigning unit for assigning bank addresses to select individually the first and second memory banks, as the same bank address through the first and second ports, so that starting addresses for the first and second memory banks become equal in booting, and assigning bank addresses to select the third memory bank, as different bank addresses through the first and second ports, and assigning, through the second port, bank addresses to select the fourth memory bank, as the same bank address as a bank address to select the third memory bank through the first port.
    • 提供了一种多处理器系统及其方法。 示例性多处理器系统可以包括第一和第二处理器,具有存储单元阵列的动态随机存取存储器,所述存储单元阵列包括通过第一端口耦合到第一处理器的第一存储器组,耦合到第二存储器组的第二存储器组和第四存储器组 处理器通过第二端口和通过第一和第二端口与第一和第二处理器共享并连接的第三存储器组,以及用于分配存储体地址以选择单独地选择第一和第二存储体的存储体地址分配单元,如同样的 通过第一和第二端口的存储器地址,使得第一和第二存储器组的起始地址在引导中变得相等,并且通过第一和第二端口分配存储体地址以选择第三存储体作为不同的存储体地址, 通过第二个端口,银行地址选择第四个存储器,作为与银行地址相同的银行地址,选择第三个存储器 银行通过第一个港口。
    • 18. 发明申请
    • Semiconductor memory device having variable-mode refresh operation
    • 具有可变模式刷新操作的半导体存储器件
    • US20100124138A1
    • 2010-05-20
    • US12585317
    • 2009-09-11
    • Dong-Hyuk LeeJung-Bae Lee
    • Dong-Hyuk LeeJung-Bae Lee
    • G11C7/00G11C8/00
    • G11C8/10G11C7/1075G11C11/406G11C11/40615G11C11/40622G11C2211/4013
    • A semiconductor memory device includes a bit line sense amplifier, a bit line pair that includes a bit line and a complementary bit line, the bit line and the complementary bit line of the bit line pair each being coupled to the bit line sense amplifier, a memory cell array having a plurality of memory banks, the memory banks including word lines and a plurality of memory cells, and a word line activation control unit that performs a control to access data corresponding to an externally same address in at least two memory cells by simultaneously activating a predetermined number of word lines from among the word lines sharing the bit line sense amplifier, and the word line activation control unit operates in response to a determination mode allowing signal that is set in accordance with a used memory density.
    • 半导体存储器件包括位线读出放大器,包括位线和互补位线的位线对,位线对的互补位线与位线读出放大器耦合, 具有多个存储体的存储单元阵列,所述存储体包括字线和多个存储器单元,以及字线激活控制单元,其执行控制以通过在至少两个存储器单元中访问对应于外部相同地址的数据进行控制 同时从共享位线读出放大器的字线中激活预定数量的字线,并且字线激活控制单元响应于根据所使用的存储器密度设置的确定模式允许信号来操作。