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11. 发明申请

US20060126231A1 Composite free layer for CIP GMR device 失效
标题翻译： CIP GMR器件的复合自由层
公开(公告)号：US20060126231A1
公开(公告)日：2006-06-15
申请号：US11010105
申请日：2004-12-10
申请人： Tong Zhao , Hui-Chuan Wang , Yun-Fei Li , Chyu-Jiuh Torng
发明人： Tong Zhao , Hui-Chuan Wang , Yun-Fei Li , Chyu-Jiuh Torng
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3903 , H01L43/10
摘要： In this invention, we replace low resistivity NiFe with high-resistivity FeNi for the FL2 portion of a composite free layer in a CIP GMR sensor in order to minimize current shunting effects while still retaining both magnetic softness and low magnetostriction. A process for manufacturing the device is also described.
摘要翻译：在本发明中，为了最小化电流分流效应同时保持磁性柔软性和低磁致伸缩性，我们用CIP GMR传感器中的复合自由层的FL2部分代替具有高电阻率FeNi的低电阻率NiFe。还描述了用于制造该装置的方法。

12. 发明申请

US20060061916A1 Easily manufactured exchange bias stabilization scheme 失效
公开(公告)号：US20060061916A1
公开(公告)日：2006-03-23
申请号：US11268074
申请日：2005-11-07
申请人： Yun-Fei Li , Hui-Chuan Wang , Chyu-Jiuh Torng , C. C. Han
发明人： Yun-Fei Li , Hui-Chuan Wang , Chyu-Jiuh Torng , C. C. Han
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/3143 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , Y10T29/49032 , Y10T29/49044 , Y10T29/49046
摘要： A problem associated with current bottom spin valve designs is that it is difficult to avoid magnetic charge accumulation at the edge of the sensor area, making a coherent spin rotation during sensing difficult to achieve. This problem has been eliminated by introducing an exchange coupling layer between the free layer and the ferromagnetic layer that is used to achieve longitudinal bias for stabilization and by extending the free layer well beyond the sensor area. After all layers have been deposited, the read gap is formed by etching down as far as this layer. Since it is not critical exactly how much of the biasing layers (antiferromagnetic as well as ferromagnetic) are removed, the etching requirements are greatly relaxed. Whatever material remains in the gap is then oxidized thereby providing a capping layer as well as a good interface for specular reflection in the sensor region.

13. 发明申请

US20050275975A1 Novel hard bias design for extra high density recording 有权
标题翻译：用于超高密度记录的新型硬偏置设计
公开(公告)号：US20050275975A1
公开(公告)日：2005-12-15
申请号：US10868716
申请日：2004-06-15
申请人： Kunliang Zhang , Yun-Fei Li , Chyu-Jiuh Torng , Chen-Jung Chien
发明人： Kunliang Zhang , Yun-Fei Li , Chyu-Jiuh Torng , Chen-Jung Chien
IPC分类号： G11B5/127 , G11B5/33 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A hard bias structure for biasing a free layer in a MR element within a read head is comprised of a composite hard bias layer having a Co78.6Cr5.2Pt16.2/Co65Cr15Pt20 configuration. The upper Co65Cr15Pt20 layer has a larger Hc value and a thickness about 2 to 10 times greater than that of the Co78.6Cr5.2Pt16.2 layer. The hard bias structure may also include a BCC underlayer such as FeCoMo which enhances the magnetic moment of the hard bias structure. Optionally, the thickness of the Co78.6Cr5.2Pt16.2 layer is zero and the Co65Cr15Pt20 layer is formed on the BCC underlayer. The present invention also encompasses a laminated hard bias structure. The Mrt value for the hard bias structure may be optimized by adjusting the thicknesses of the BCC underlayer and CoCrPt layers. As a result, a larger process window is realized and lower asymmetry output during a read operation is achieved.
摘要翻译：用于偏置读取头内的MR元件中的自由层的硬偏置结构包括具有Co ++ 78.6Cr 5.2 Pt 16.2的复合硬偏置层另一方面，本发明的另一个目的是提供一种用于制造高分子材料的方法。上部Co 65 N 15 15 Pt 20 O层具有较大的Hc值，并且厚度比Co < 丙烯酸甲酯，丙烯酸甲酯，丙烯酸丁酯，丙烯酸乙酯硬偏压结构还可以包括诸如FeCoMo的BCC底层，其增强了硬偏压结构的磁矩。任选地，Co ++ C 26.6 Cr 2 Pt 16.2层的厚度为零，并且Co 65 在BCC底层上形成> 15 20 层。本发明还包括层压硬偏置结构。可以通过调整BCC底层和CoCrPt层的厚度来优化硬偏置结构的Mrt值。结果，实现了更大的处理窗口，并且在读取操作期间实现了较低的不对称输出。

14. 发明授权

US09196270B1 Method for providing a magnetoresistive element having small critical dimensions 有权
标题翻译：提供具有小临界尺寸的磁阻元件的方法
公开(公告)号：US09196270B1
公开(公告)日：2015-11-24
申请号：US11635830
申请日：2006-12-07
申请人： Danning Yang , Guanghong Luo , Yun-Fei Li
发明人： Danning Yang , Guanghong Luo , Yun-Fei Li
IPC分类号： G11B5/31 , G11B5/39 , H01L21/311 , H01L21/314
CPC分类号： G11B5/398 , G11B5/3163 , G11B5/39 , G11B5/3903 , G11B5/3932 , H01L21/31138 , H01L21/3144 , H01L43/08 , Y10T29/49041 , Y10T29/49048 , Y10T29/49052
摘要： The method and system for providing a magnetoresistive device are described. The method and system include depositing a plurality of magnetoresistive element layers which cover at least one device area and at least one field area. The method and system also include providing a single layer mask. The single layer mask covers a first portion of the magnetoresistive element layers in the device area(s) and exposes the magnetoresistive element layers in the field area(s). The method and system include defining the magnetoresistive element(s) using the single layer mask and depositing a hard bias layer on the device area(s) and the field area(s) after the magnetic element(s) are defined. The method and system further include performing a planarization after the hard bias layer is deposited.
摘要翻译：描述了用于提供磁阻器件的方法和系统。该方法和系统包括沉积多个覆盖至少一个器件区域和至少一个场区域的磁阻元件层。该方法和系统还包括提供单层掩模。单层掩模覆盖器件区域中的磁阻元件层的第一部分并且暴露场区域中的磁阻元件层。该方法和系统包括使用单层掩模限定磁阻元件，并且在限定了磁性元件之后，在器件区域和场区域上沉积硬偏置层。所述方法和系统还包括在沉积硬偏压层之后执行平面化。

15. 发明授权

US08444866B1 Method and system for providing a perpendicular magnetic recording pole with a multi-layer side gap 有权
标题翻译：用于提供具有多层侧面间隙的垂直磁记录极的方法和系统
公开(公告)号：US08444866B1
公开(公告)日：2013-05-21
申请号：US12886999
申请日：2010-09-21
申请人： Lijie Guan , Changqing Shi , Ming Jiang , Yun-Fei Li , Ying Hong
发明人： Lijie Guan , Changqing Shi , Ming Jiang , Yun-Fei Li , Ying Hong
IPC分类号： B44C1/22
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/315 , G11B5/3163 , Y10T29/49021 , Y10T29/49032
摘要： A method for fabricating a magnetic transducer having a nonmagnetic intermediate layer is described. A trench is provided in the intermediate layer. The trench has a profile and location corresponding to a pole. A first nonmagnetic gap layer is provided. At least part of the first nonmagnetic gap layer resides in the trench. A pole including magnetic material(s) is provided. At least part of the pole resides in the trench and on the part of the nonmagnetic layer in the trench. At least part of the intermediate layer adjacent to the pole is removed and a second nonmagnetic gap layer provided. The second nonmagnetic gap layer is thicker than the first nonmagnetic gap layer. Part of the second nonmagnetic layer and part of the first nonmagnetic layer adjacent to the pole form a side gap. A side shield, a gap, and a top shield are also provided.
摘要翻译：描述了一种用于制造具有非磁性中间层的磁换能器的方法。在中间层设置沟槽。沟槽具有对应于杆的轮廓和位置。提供第一非磁性间隙层。第一非磁性间隙层的至少一部分位于沟槽中。提供包括磁性材料的极柱。极的至少一部分驻留在沟槽中以及在沟槽中的非磁性层的一部分上。去除与极相邻的中间层的至少一部分，并提供第二非磁性间隙层。第二非磁性间隙层比第一非磁性间隙层厚。第二非磁性层的一部分和与极相邻的第一非磁性层的一部分形成侧面间隙。还提供了侧护罩，间隙和顶盖。

16. 发明授权

US08375564B1 Method for fabricating a pole of a magnetic transducer 有权
标题翻译：一种用于制造磁换能器极点的方法
公开(公告)号：US08375564B1
公开(公告)日：2013-02-19
申请号：US12633562
申请日：2009-12-08
申请人： Guanghong Luo , Danning Yang , Weimin Si , Dujiang Wan , Yun-Fei Li , Lijie Guan , Ming Jiang
发明人： Guanghong Luo , Danning Yang , Weimin Si , Dujiang Wan , Yun-Fei Li , Lijie Guan , Ming Jiang
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/1278 , G11B5/3116 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method provides a pole of magnetic recording transducer. A nonmagnetic stop layer having a thickness and a top surface is provided. A depression that forms a bevel is provided in the stop layer. The bevel has a depth less than the thickness and a bevel angle with respect to a remaining portion of the top surface. The bevel angle is greater than zero and less than ninety degrees. An intermediate layer having a substantially flat top surface is provided over the stop layer. A trench is formed in the intermediate layer via a removal process. The trench has a profile corresponding to the pole. The stop layer is a stop for the removal process. The method also includes providing the pole in the trench. The pole has a leading edge bevel corresponding to the bevel in the stop layer.
摘要翻译：一种方法提供磁记录传感器的极点。提供具有厚度和顶表面的非磁性停止层。形成斜面的凹陷设置在停止层中。该斜面具有小于该厚度的深度和相对于顶部表面的剩余部分的斜角。斜角大于零，小于九十度。具有基本上平坦的顶表面的中间层设置在停止层上。通过去除工艺在中间层中形成沟槽。沟槽具有对应于极点的轮廓。停止层是移除过程的停止点。该方法还包括在沟槽中设置极点。极具有对应于停止层中的斜面的前缘斜面。

17. 发明授权

US08225488B1 Method for providing a perpendicular magnetic recording (PMR) pole 有权
标题翻译：提供垂直磁记录（PMR）极的方法
公开(公告)号：US08225488B1
公开(公告)日：2012-07-24
申请号：US12471278
申请日：2009-05-22
申请人： Jinqiu Zhang , Yun-Fei Li , Ying Hong
发明人： Jinqiu Zhang , Yun-Fei Li , Ying Hong
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/3163 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method for providing a PMR pole in a magnetic recording transducer comprises providing a mask on an intermediate layer, the mask including a line having at least one side, providing a hard mask on the mask, a first portion of the hard mask residing on the at least one side and a second portion residing on a surface of the intermediate layer, the hard mask including a dry-etchable layer and a high removal ratio layer on the dry-etchable layer, removing at least part of the first portion of the hard mask, at least a portion of the line being exposed, removing the line, thereby providing an aperture in the hard mask corresponding to the line, forming a trench in the intermediate layer under the aperture using a removal process, and providing the PMR pole, at least a portion of the PMR pole residing in the trench.
摘要翻译：用于在磁记录换能器中提供PMR极的方法包括在中间层上提供掩模，所述掩模包括具有至少一个侧面的线，在所述掩模上提供硬掩模，所述硬掩模的位于所述掩模上的第一部分驻留在中间层的表面上的至少一个侧面和第二部分，该硬掩模包括在该可干蚀刻层上的可干蚀刻层和高去除率层，去除硬的第一部分的至少一部分掩模，线的至少一部分被暴露，去除线，从而在对应于线的硬掩模中提供孔，使用去除过程在孔下方的中间层中形成沟槽，以及提供PMR极， PMR极的至少一部分位于沟槽中。

18. 发明授权

US08107201B2 Hard bias design for extra high density recording 有权
标题翻译：用于超高密度记录的硬偏置设计
公开(公告)号：US08107201B2
公开(公告)日：2012-01-31
申请号：US12660908
申请日：2010-03-05
申请人： Kunliang Zhang , Yun-Fei Li , Chyu-Jiuh Torng , Chen-Jung Chien
发明人： Kunliang Zhang , Yun-Fei Li , Chyu-Jiuh Torng , Chen-Jung Chien
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A hard bias structure for biasing a free layer in a MR element within a read head is comprised of a composite hard bias layer having a Co78.6Cr5.2Pt16.2/Co65Cr15Pt20 configuration. The upper Co65Cr15Pt20 layer has a larger Hc value and a thickness about 2 to 10 times greater than that of the Co78.6Cr5.2Pt16.2 layer. The hard bias structure may also include a BCC underlayer such as FeCoMo which enhances the magnetic moment of the hard bias structure. Optionally, the thickness of the Co78.6Cr5.2Pt16.2 layer is zero and the Co65Cr15Pt20 layer is formed on the BCC underlayer. The present invention also encompasses a laminated hard bias structure. The Mrt value for the hard bias structure may be optimized by adjusting the thicknesses of the BCC underlayer and CoCrPt layers. As a result, a larger process window is realized and lower asymmetry output during a read operation is achieved.
摘要翻译：用于偏置读取头内的MR元件中的自由层的硬偏置结构由具有Co78.6Cr5.2Pt16.2 / Co65Cr15Pt20配置的复合硬偏置层组成。 Co65Cr15Pt20上层具有较大的Hc值，厚度约为Co78.6Cr5.2Pt16.2层的2〜10倍。硬偏压结构还可以包括诸如FeCoMo的BCC底层，其增强了硬偏压结构的磁矩。可选地，Co78.6Cr5.2Pt16.2层的厚度为零，Co65Cr15Pt20层形成在BCC底层上。本发明还包括层压硬偏置结构。可以通过调整BCC底层和CoCrPt层的厚度来优化硬偏置结构的Mrt值。结果，实现了更大的处理窗口，并且在读取操作期间实现了较低的不对称输出。

19. 发明申请

US20060164766A1 Exchange bias structure for abutted junction GMR sensor 失效
公开(公告)号：US20060164766A1
公开(公告)日：2006-07-27
申请号：US11375323
申请日：2006-03-14
申请人： Yun-Fei Li , Hui-Chuan Wang , Chyu-Jiuh Torng , Cherng-Chyi Han , Mao-Min Chen
发明人： Yun-Fei Li , Hui-Chuan Wang , Chyu-Jiuh Torng , Cherng-Chyi Han , Mao-Min Chen
IPC分类号： G11B5/33 , B05D5/12 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Although it is known that exchange bias can be utilized in abutted junctions for longitudinal stabilization, a relatively large moment is needed to pin down the sensor edges effectively. Due to the inverse dependence of the exchange bias on the magnetic layer thickness, a large exchange bias has been difficult to achieve by the prior art. This problem has been solved by introducing a structure in which the magnetic moment of the bias layer has been approximately doubled by pinning it from both above and below through exchange with antiferromagnetic layers. Additionally, since the antiferromagnetic layer is in direct abutted contact with the free layer, it acts directly to help stabilize the sensor edge, which is an advantage over the traditional magnetostatic pinning that had been used.

20. 发明申请

US20050264957A1 Hard biased materials for recording head applications 失效
标题翻译：用于记录头应用的硬偏置材料
公开(公告)号：US20050264957A1
公开(公告)日：2005-12-01
申请号：US10858029
申请日：2004-06-01
申请人： Yun-Fei Li , Kunliang Zhang , Chyu-Jiuh Torng
发明人： Yun-Fei Li , Kunliang Zhang , Chyu-Jiuh Torng
IPC分类号： G11B5/127 , G11B5/33 , G11B5/39
CPC分类号： G11B5/39 , Y10T428/11 , Y10T428/115
摘要： A hard bias layer that forms an abutting junction with a free layer in a GMR element and is comprised of FePtCu or FePtCuX where X is B, C, O, Si, or N is disclosed. The FePtCu layer has a composition of about 45 atomic % Fe, 45 atomic % Pt, and 10 atomic % Cu and does not require a seed layer to achieve an ordered structure. The FePtCu layer is annealed at a temperature of about 280° C. and has an Hc value more than double that of a conventional CoCrPt hard bias layer with a similar thickness. Since the FePtCu hard bias layer adjoins a free layer, it has a higher sensor edge pinning efficiency than a configuration with a CoCrPt layer on a seed layer. The novel hard bias layer is compatible with either a top or bottom spin valve structure in a GMR sensor.
摘要翻译：公开了与GMR元件中的自由层形成邻接连接并由FePtCu或FePtCuX组成的硬偏置层，其中X是B，C，O，Si或N。 FePtCu层具有约45原子％Fe，45原子％Pt和10原子％Cu的组成，并且不需要种子层来实现有序结构。 FePtCu层在约280℃的温度下进行退火，并且其Hc值大于具有相似厚度的常规CoCrPt硬偏压层的Hc值的两倍以上。由于FePtCu硬偏置层与自由层相邻，因此与种子层上的CoCrPt层的配置相比，传感器边缘钉扎效率更高。新颖的硬偏置层与GMR传感器中的顶部或底部自旋阀结构兼容。

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