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11. 发明授权

US6068703A Gas mixing apparatus and method 失效
标题翻译：气体混合装置及方法
公开(公告)号：US6068703A
公开(公告)日：2000-05-30
申请号：US893414
申请日：1997-07-11
申请人： Chen-An Chen , Koji Nakanishi , Aihua Chen
发明人： Chen-An Chen , Koji Nakanishi , Aihua Chen
IPC分类号： B01F3/02 , B01F5/06 , C23C16/44 , C23C16/455 , C23C16/511 , H01J37/32 , H01L21/285 , C23C16/00
CPC分类号： C23C16/45512 , B01F5/064 , B01F5/0656 , B01F5/0665 , C23C16/455 , H01J37/3244 , B01F3/02
摘要： The present invention provides apparatus, systems, and methods related to the manufacture of integrated circuits. Specifically, embodiments of the present invention include apparatus designed to provide thorough and reliable fluid mixture for gases used in a semiconductor processing system. In one embodiment of the invention, the gas mixing apparatus comprises a gas mixer housing having a gas inlet, a fluid flow channel, and a gas outlet. The fluid flow channel is fluidly coupled to a plurality of gas sources. The majority of the gas mixture occurs in the fluid flow channel which comprises one or more fluid separators for separating the gas into two or more gas portions and one or more fluid collectors for allowing the gas portions to collide with each other to mix the gas portions. This separation and collection of the gas portions results in a thoroughly mixed gas.
摘要翻译：本发明提供了与集成电路的制造相关的装置，系统和方法。具体地，本发明的实施例包括设计成为半导体处理系统中使用的气体提供彻底且可靠的流体混合物的装置。在本发明的一个实施例中，气体混合装置包括具有气体入口，流体流动通道和气体出口的气体混合器壳体。流体流动通道流体耦合到多个气体源。大部分气体混合物发生在流体流动通道中，流体流动通道包括一个或多个流体分离器，用于将气体分离成两个或更多个气体部分和一个或多个流体收集器，用于允许气体部分相互碰撞以混合气体部分。气体部分的分离和收集导致充分混合的气体。

12. 发明授权

US5948958A Method and apparatus for verifying the calibration of semiconductor processing equipment 失效
标题翻译：用于验证半导体加工设备的校准的方法和装置
公开(公告)号：US5948958A
公开(公告)日：1999-09-07
申请号：US144722
申请日：1998-09-01
申请人： Won Bang , Chen-An Chen
发明人： Won Bang , Chen-An Chen
IPC分类号： H01L21/00 , G01F1/00
CPC分类号： H01L21/67253
摘要： A semiconductor processing equipment calibration verification procedure is provided that does not rely on pressure rises from laboratory reference chambers and that is insensitive to in-chamber variations that affect processing gas pressure rise but do not affect the underlying process. A baseline pressure rise ratio is computed based on an inert gas pressure rise and a processing gas pressure rise produced when an inert gas and a processing gas, respectively, are flowed into a processing chamber. Subsequent, preferably periodic, calibration verification procedures are performed and new pressure rise ratios are computed. When a new pressure rise ratio differs from the baseline pressure rise ratio by more than a predetermined amount, the calibration of the semiconductor processing equipment is rejected.
摘要翻译：提供半导体处理设备校准验证程序，其不依赖于来自实验室参考室的压力升高，并且对于影响处理气体压力升高但不影响底层过程的室内变化不敏感。基于惰性气体压力升高和当惰性气体和处理气体分别流入处理室时产生的处理气体压力升高来计算基线压力上升比。执行随后的，优选周期性的校准验证程序，并计算新的压力上升比。当新的压力上升比与基准压力上升比不同的预定量时，半导体处理设备的校准被拒绝。

13. 发明授权

US06793965B2 Clog resistant injection valve 失效
标题翻译：阻塞注射阀
公开(公告)号：US06793965B2
公开(公告)日：2004-09-21
申请号：US09902283
申请日：2001-07-10
申请人： Chen-An Chen , Won Bang
发明人： Chen-An Chen , Won Bang
IPC分类号： C23C1600
CPC分类号： C23C16/4485 , C23C16/4407 , Y10T137/0391 , Y10T137/87676
摘要： An injection valve is provided with vibration to dislodge residue therefrom and to thus avoid injection valve clogging. A wave generator which preferably generates an ultrasonic sine wave, is operatively coupled to the vaporization region of the injection valve (i.e., via the injection block, via a piezoelectric valve controller, etc.). The wave may be applied to the injection valve whenever vaporization takes place, in which case a removable trap is coupled between the injection valve and the processing chamber. Alternatively, the sonic wave may be applied to the injection valve only in conjunction with a chamber cleaning process.
摘要翻译：喷射阀具有振动以从其中排出残留物，从而避免喷射阀堵塞。优选地产生超声正弦波的波发生器可操作地耦合到喷射阀的蒸发区域（即，经由喷射块，经由压电阀控制器等）。每当发生气化时，波浪都可以施加到喷射阀，在这种情况下，可拆卸的捕集器连接在喷射阀和处理室之间。或者，声波可以仅与室清洁过程一起施加到喷射阀。

14. 发明授权

US06379492B2 Corrosion resistant coating 失效
标题翻译：耐腐蚀涂层
公开(公告)号：US06379492B2
公开(公告)日：2002-04-30
申请号：US09428140
申请日：1999-10-26
申请人： Won Bang , Chen-An Chen , Shankar Venkataraman , Ajay Bhatnagar
发明人： Won Bang , Chen-An Chen , Shankar Venkataraman , Ajay Bhatnagar
IPC分类号： C23F102
CPC分类号： C23C14/5806 , C23C14/0694 , C23C16/4404 , H01J37/32477 , H01J37/32559
摘要： A corrosion resistant part comprising a protective coating formed upon a component part. The protective coating comprises magnesium fluoride, which is substantially pure and substantially dense. Preferably, the coating is at least about 99% pure and at least about 85% dense. For example, such a coating can be formed upon the component part at a temperature of at least about 250° C. and a pressure of not more than about 1×10−5 torr. The resulting coating is effective in protecting the surfaces of an aluminum nitride heater against corrosion within a fluorine-containing environment inside a chemical vapor deposition chamber.
摘要翻译：一种耐腐蚀部件，包括形成在部件上的保护涂层。保护性涂层包括氟化镁，其基本上纯且基本上致密。优选地，涂层为至少约99％纯度且至少约85％致密。例如，这样的涂层可以在至少约250℃的温度和不大于约1×10-5乇的压力下在组分部分上形成。所得到的涂层有效地保护氮化铝加热器的表面免受化学气相沉积室内的含氟环境中的腐蚀。

15. 发明授权

US06358327B1 Method for endpoint detection using throttle valve position 失效
标题翻译：使用节气门位置进行端点检测的方法
公开(公告)号：US06358327B1
公开(公告)日：2002-03-19
申请号：US09342667
申请日：1999-06-29
申请人： Himanshu Pokharna , Chen-An Chen , West M. Burghardt , Reuban Richmonds
发明人： Himanshu Pokharna , Chen-An Chen , West M. Burghardt , Reuban Richmonds
IPC分类号： B08B900
CPC分类号： C23C16/52 , C23C16/4405 , Y10S438/905
摘要： A method and apparatus for endpoint detection is provided. Endpoint is determined by monitoring throttle valve position during a production instance of a given process, and by comparing a production signal obtained thereby with a calibration signal previously obtained by monitoring throttle valve position during performance of the process on a chamber or on a wafer of known constitution. The production process endpoint may be set based on the endpoint time of the calibration signal, or may be determined by filtering the calibration signal and the production signal to identify features thereof and by comparing the pattern of features of the production signal with the pattern of features of the calibration signal. Preferably throttle valve positions are filtered using a low pass finite impulse response filter of order three.
摘要翻译：提供了一种用于端点检测的方法和装置。通过在给定过程的生产实例期间监测节气门位置来确定端点，并且通过将由此获得的生产信号与在室上或在已知的晶片上的过程执行期间监视节流阀位置而预先获得的校准信号进行比较来确定端点宪法。可以基于校准信号的端点时间来设置生产过程端点，或者可以通过对校准信号和生产信号进行滤波来确定其特征并通过将生成信号的特征图案与特征图案进行比较来确定的校准信号。优选地，使用三阶的低通有限脉冲响应滤波器对节流阀位置进行滤波。

16. 发明授权

US06235120B1 Coating for parts used in semiconductor processing chambers 失效
标题翻译：用于半导体处理室的部件涂层
公开(公告)号：US06235120B1
公开(公告)日：2001-05-22
申请号：US09105970
申请日：1998-06-26
申请人： Won Bang , Chen-An Chen
发明人： Won Bang , Chen-An Chen
IPC分类号： C23D500
CPC分类号： C23C16/4404 , Y10S156/914
摘要： Improved semiconductor processing chamber parts are provided. An improved part is made of an underlying part having both an intermediate coating and a surface layer applied thereto. The intermediate coating includes a plurality of layers each having a CTE intermediate the CTE of the underlying part and the CTE of the surface layer. The intermediate coating reduces the stress between any two layers, allowing use of underlying parts and surface layers having dissimilar CTEs. The universe of acceptable materials for use within a semiconductor processing chamber is expanded, as fewer selection criteria exist for a given layer.
摘要翻译：提供了改进的半导体处理室部件。改进的部分由具有中间涂层和施加到其上的表面层的下面部分制成。中间涂层包括多个层，每个层具有CTE中间层的底层部分的CTE和表面层的CTE。中间涂层减少任何两层之间的应力，允许使用具有不同CTE的下层部件和表面层。在半导体处理室内使用的可接受的材料的宇宙被扩展，因为给定层的选择标准较少。

17. 发明申请

US20100279516A1 APPARATUS AND METHOD OF ALIGNING AND POSITIONING A COLD SUBSTRATE ON A HOT SURFACE 有权
标题翻译：在热表面上对准和定位冷基底的装置和方法
公开(公告)号：US20100279516A1
公开(公告)日：2010-11-04
申请号：US12839282
申请日：2010-07-19
申请人： Chen-An Chen , Anh N. Nguyen , Manoocher Birang
发明人： Chen-An Chen , Anh N. Nguyen , Manoocher Birang
IPC分类号： H01L21/26
CPC分类号： H01L21/67248 , C23C16/4586 , H01L21/68742
摘要： Embodiments of the invention contemplate a method, apparatus and system that are used to support and position a substrate on a surface that is at a different temperature than the initial, or incoming, substrate temperature. Embodiments of the invention may also include a method of controlling the transfer of heat between a substrate and substrate support positioned in a processing chamber. The apparatus and methods described herein generally may also provide an inexpensive and simple way of accurately positioning a substrate on a substrate support that is positioned in a semiconductor processing chamber. Substrate processing chambers that can benefit from the various embodiments described herein include, but are not limited to RTP, CVD, PVD, ALD, plasma etching, and/or laser annealing chambers.
摘要翻译：本发明的实施方案考虑了一种方法，装置和系统，其用于将衬底支撑并定位在与初始或进入衬底温度不同的温度的表面上。本发明的实施例还可以包括控制位于处理室中的衬底和衬底支撑件之间的热传递的方法。本文所述的装置和方法通常还可以提供将衬底精确地定位在位于半导体处理室中的衬底支撑件上的便宜且简单的方法。可受益于本文描述的各种实施方案的衬底处理室包括但不限于RTP，CVD，PVD，ALD，等离子体蚀刻和/或激光退火室。

18. 发明申请

US20070209684A1 Copper deposition chamber having integrated bevel clean with edge bevel removal detection 审中-公开
标题翻译：铜沉积室具有整体斜面清洁和边缘斜面去除检测
公开(公告)号：US20070209684A1
公开(公告)日：2007-09-13
申请号：US11369590
申请日：2006-03-07
申请人： Chen-An Chen , Anh Nguyen , Manoocher Birang
发明人： Chen-An Chen , Anh Nguyen , Manoocher Birang
IPC分类号： B08B3/02
CPC分类号： H01L21/6708 , H01L21/67253
摘要： Embodiments of the invention generally provide apparatus and method for detecting and controlling edge bevel removal of a semiconductor substrate. One embodiment of the present invention provides an apparatus for inspecting a rotating substrate. The apparatus comprises a substrate support configured to support the rotating substrate on a back side and rotate the substrate about a central axis, and a sensor positioned above the substrate support, the sensor being configured to inspect a front side of the rotating substrate while moving simultaneously radially across the substrate.
摘要翻译：本发明的实施例通常提供用于检测和控制半导体衬底的边缘斜面去除的装置和方法。本发明的一个实施例提供一种用于检查旋转基片的装置。该装置包括：衬底支撑件，被配置为在后侧支撑旋转衬底并围绕中心轴线旋转衬底;以及位于衬底支撑件上方的传感器，该传感器被配置为在同时移动的同时检查旋转衬底的前侧径向穿过衬底。

19. 发明授权

US06943127B2 CVD plasma assisted lower dielectric constant SICOH film 失效
标题翻译： CVD等离子体辅助低介电常数SICOH膜
公开(公告)号：US06943127B2
公开(公告)日：2005-09-13
申请号：US10302240
申请日：2002-11-22
申请人： Seon-Mee Cho , Peter Wai-Man Lee , Chi-I Lang , Dian Sugiarto , Chen-An Chen , Li-Qun Xia , Shankar Venkataraman , Ellie Yieh
发明人： Seon-Mee Cho , Peter Wai-Man Lee , Chi-I Lang , Dian Sugiarto , Chen-An Chen , Li-Qun Xia , Shankar Venkataraman , Ellie Yieh
IPC分类号： C23C16/30 , H01L21/316 , H01L21/42
CPC分类号： H01L21/02126 , C23C16/30 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/31633 , Y10S438/931 , Y10T428/31909
摘要： A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.
摘要翻译：提供了具有约3.0或更小，优选约2.5或更小的硅 - 碳键和介电常数的低介电常数膜。通过使环状有机硅化合物和脂族有机硅化合物与氧化气体反应同时施加RF功率来沉积低介电常数膜。沉积膜的碳含量除氢原子以外约为10至约30原子百分比，优选除氢原子之外约10至约20原子％。

20. 发明授权

US06902629B2 Method for cleaning a process chamber 失效
公开(公告)号：US06902629B2
公开(公告)日：2005-06-07
申请号：US10122481
申请日：2002-04-12
申请人： Yi Zheng , Vinita Singh , Srinivas D. Nemani , Chen-An Chen , Ju-Hyung Lee , Shankar Venkataraman
发明人： Yi Zheng , Vinita Singh , Srinivas D. Nemani , Chen-An Chen , Ju-Hyung Lee , Shankar Venkataraman
IPC分类号： B08B7/00 , C23C16/44 , B08B5/00
CPC分类号： C23C16/4405 , B08B7/00 , Y10S134/902 , Y10S438/905
摘要： Methods and apparatus for cleaning deposition chambers are presented. The cleaning methods include the use of a remote plasma source to generate reactive species from a cleaning gas to clean deposition chambers. A flow of helium or argon may be used during chamber cleaning. Radio frequency power may also be used in combination with a remote plasma source to clean deposition chambers.

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