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11. 发明授权

US5496743A Method of making an article comprising a semiconductor device 失效
标题翻译：制造包含半导体器件的制品的方法
公开(公告)号：US5496743A
公开(公告)日：1996-03-05
申请号：US171504
申请日：1993-12-21
申请人： Serge Luryi
发明人： Serge Luryi
IPC分类号： H01L29/68 , H01L21/334 , H01L21/02
CPC分类号： H01L29/66931 , Y10S148/135 , Y10S438/928 , Y10S438/977
摘要： A Novel method of making a semiconductor device (e.g., a HBT) is disclosed. A semiconductor body that comprises bulk semiconductor material and epitaxial semiconductor material on the bulk material is processed by carrying out a first sequence of processing steps on the epitaxial material. The sequence comprises forming at least first and second contact means on the epitaxial material. The resulting intermediate body is mounted, epitaxial material down, on a carrier body (e.g., a Si wafer with integrated circuitry thereon), such that the first and second contact means are electrically connected to, respectively, third and fourth contact means on the carrier body. Mounting is accomplished, exemplarily, by means of anisotropically conductive adhesive means. Subsequent to mounting of the intermediate body on the carrier body, a second sequence of processing steps is carried out on the intermediate body. The second sequence comprises removing, in at least a portion of the mounted intermediate body, essentially all bulk semiconductor material. The inventive method can be used to produce, for instance, a very fast HBT of novel geometry.
摘要翻译：公开了制造半导体器件（例如，HBT）的新方法。通过在外延材料上执行第一序列的处理步骤来处理在体材料上包括体半导体材料和外延半导体材料的半导体本体。该顺序包括在外延材料上形成至少第一和第二接触装置。所得到的中间体在载体主体（例如，其上具有集成电路的Si晶片）上向下安装外延材料，使得第一和第二接触装置分别电连接到载体上的第三和第四接触装置身体。示例性地通过各向异性导电粘合剂装置实现安装。在将中间体安装在载体上之后，在中间体上执行第二序列的加工步骤。第二序列包括在至少一部分安装的中间体中去除基本上所有的体半导体材料。本发明的方法可用于产生例如非常快的新颖几何形状的HBT。

12. 发明授权

US5304816A Article comprising a "ballistic" heterojunction bipolar transistor 失效
标题翻译：文章包括“弹道”异质结双极晶体管
公开(公告)号：US5304816A
公开(公告)日：1994-04-19
申请号：US981588
申请日：1992-11-25
申请人： Anatoly A. Grinberg , Serge Luryi
发明人： Anatoly A. Grinberg , Serge Luryi
IPC分类号： H01L29/205 , H01L21/331 , H01L29/73 , H01L29/737 , H01L29/70
CPC分类号： H01L29/7371
摘要： The disclosed heterojunction bipolar transistor, to be referred to as the "coherent" transistor (CT), is capable of providing gain above the conventionally defined cut-off frequencies f.sub.T and f.sub.max. Substantially, mono-energetic (average energy .DELTA.) carriers are injected in beam-like fashion into the base, with kT
摘要翻译：所公开的被称为“相干”晶体管（CT）的异质结双极晶体管能够提供高于常规限定的截止频率fT和fmax的增益。基本上，单能量（平均能量（Delta））载流子以波束状的方式注入基极，其中kT <（Delta）

13. 发明授权

US08571082B2 Quantum cascade lasers with electrically tunable emission wavelengths 有权
标题翻译：具有电可调谐发射波长的量子级联激光器
公开(公告)号：US08571082B2
公开(公告)日：2013-10-29
申请号：US13012627
申请日：2011-01-24
申请人： Gregory Belenky , John D. Bruno , Mikhail V. Kisin , Serge Luryi , Leon Shterengas , Sergey Suchalkin , Richard L. Tober , Mikhail Belkin
发明人： Gregory Belenky , John D. Bruno , Mikhail V. Kisin , Serge Luryi , Leon Shterengas , Sergey Suchalkin , Richard L. Tober , Mikhail Belkin
IPC分类号： H01S5/00 , H01S3/10
CPC分类号： H01S5/0622 , B82Y20/00 , H01S5/0614 , H01S5/12 , H01S5/322 , H01S5/3401 , H01S5/3402
摘要： The present invention provides a QCL device with an electrically controlled refractive index through the Stark effect. By changing the electric field in the active area, the energy spacing between the lasing energy levels may be changed and, hence, the effective refractive index in the spectral region near the laser wavelength may be controlled.
摘要翻译：本发明通过斯塔克效应提供具有电控折射率的QCL器件。通过改变有源区域中的电场，可以改变激光能级之间的能量间隔，因此可以控制激光波长附近的光谱区域中的有效折射率。

14. 发明授权

US08253109B2 Slab scintillator with integrated double-sided photoreceiver 有权
标题翻译：具有集成双面光接收器的平板闪烁体
公开(公告)号：US08253109B2
公开(公告)日：2012-08-28
申请号：US13296516
申请日：2011-11-15
申请人： Joseph H. Abeles , Serge Luryi
发明人： Joseph H. Abeles , Serge Luryi
IPC分类号： G01T1/20
CPC分类号： G01T1/2018
摘要： An article comprising a slab generating scintillation light in response to ionization event and formed with at least two sides. The ionization event is resulted from interaction of high-energy particles within a material of the slab between these sides. A photoreceiver sensitive to the scintillation light is integrated on each side of the slab in an optically-tight fashion. An arrangement is provided for analyzing signals resulted from the ionization event and generated by the photoreceivers. The photoreceivers and the analyzing arrangement are adapted for extracting a position of the ionization event within the slab material relative to the slab sides. A correcting arrangement is provided for correcting the signals and to provide attenuation of the scintillation light.
摘要翻译：一种制品，其包括响应于电离事件产生闪烁光并且形成有至少两侧的板。电离事件是由这些侧面之间的板坯材料中的高能粒子相互作用产生的。对闪烁光敏感的光接收器以光学紧密的方式集成在板的每一侧上。提供了一种用于分析由电离事件产生并由光接收器产生的信号的装置。光接收器和分析装置适于提取板坯材料内相对于板坯侧面的电离事件的位置。提供了校正装置，用于校正信号并提供闪烁光的衰减。

15. 发明申请

US20110248167A1 Bolometric sensor with high TCR and tunable low resistivity 有权
标题翻译：具有高TCR和可调低电阻率的测温传感器
公开(公告)号：US20110248167A1
公开(公告)日：2011-10-13
申请号：US12924930
申请日：2010-10-08
申请人： Michael A. Gurvitch , Serge Luryi , Aleksandr Y. Polyakov , Aleksandr Shabalov
发明人： Michael A. Gurvitch , Serge Luryi , Aleksandr Y. Polyakov , Aleksandr Shabalov
IPC分类号： G01J5/10
CPC分类号： G01J5/24 , G01J5/20
摘要： The present invention provides a novel way of operating sensing elements or bolometers in the resistive hysteresis region of a phase-transitioning VO2 (or doped VO2) films. The invention is based on a novel principle that minor hysteresis loops inside the major loop become single-valued or non-hysteretic for sufficiently small temperature excursions. This single valued R(T) branches being characterized by essentially the same temperature coefficient of resistivity (TCR) as the semiconducting phase at room temperature. These non-hysteretic branches (NHB) can be located close to the metallic-phase end of the major loop, thus providing for tunable resistivity orders of magnitude lower than that of a pure semiconducting phase. Operating the Focal Plan Array in one of these NHBs allows for having high TCR and low resistivity simultaneously. Means for measuring of the sensor R(T) characteristic is provided together with the means of achieving and controlling the correct sensor positioning at the operating temperature inside one of these NHBs.
摘要翻译：本发明提供了在相变VO2（或掺杂的VO2）膜的电阻滞后区域中操作感测元件或测辐射热计的新颖方式。本发明基于一种新颖的原理，即在主环路内部的小的滞后回路成为足够小的温度偏移的单值或非滞后。该单值R（T）分支的特征在于在室温下与半导体相基本上具有相同的电阻率温度系数（TCR）。这些非滞后分支（NHB）可以靠近主回路的金属相端，从而提供比纯半导体相的可调电阻率数量级。在这些NHB之一中操作焦点计划阵列允许同时具有高TCR和低电阻。传感器R（T）特性的测量装置与在这些NHB之一内的工作温度下实现和控制正确的传感器定位的装置一起提供。

16. 发明授权

US07265354B2 Semiconductor scintillation high-energy radiation detector 失效
标题翻译：半导体闪烁高能辐射探测器
公开(公告)号：US07265354B2
公开(公告)日：2007-09-04
申请号：US11144443
申请日：2005-06-06
申请人： Alexander Kastalsky , Serge Luryi , Boris Spivak
发明人： Alexander Kastalsky , Serge Luryi , Boris Spivak
IPC分类号： C09K11/54 , G01T1/20
CPC分类号： G01T1/2018
摘要： A high-energy radiation detector is disclosed which uses a semiconductor material to absorb high-energy radiation and emit secondary light in response. The semiconductor is designed to be largely transparent for the interband light it emits so that the generated secondary photons can reach the semiconductor surface, to be detected by a suitable photo-detector. The semiconductor thus plays a role of a scintillator with the emitted light registered by a photo-detector.Two different device embodiments are disclosed. The first embodiment employs a uniform bulk slab of the appropriately chosen semiconductor, such as n-doped InP. Its principal advantage lies in the simplicity and low cost. The second device employs a multi-layer heterostructure. The principal advantage of the second type detector is the possibility of a substantial enhancement in the efficiency of absorption of the primary high-energy radiation.With appropriate modifications the disclosed detector can be used both for radiation monitoring, like a Gaiger counter, and for high-resolution analysis and characterization of the ionizing radiation.
摘要翻译：公开了一种高能辐射检测器，其使用半导体材料来吸收高能辐射并响应于发射二次光。半导体被设计为对于其发射的带间光而言是很透明的，使得所产生的次级光子可以到达半导体表面，由适当的光检测器检测。因此，半导体起到闪光体的作用，其中发射的光由光检测器记录。公开了两种不同的设备实施例。第一实施例采用适当选择的半导体的均匀块状板，例如n掺杂InP。其主要优点在于简单性和低成本。第二装置采用多层异质结构。第二类型检测器的主要优点是可以显着提高初级高能辐射的吸收效率。通过适当的修改，所公开的检测器既可用于辐射监测，如Gaiger计数器，也可用于电离辐射的高分辨率分析和表征。

17. 发明申请

US20060273258A1 Semiconductor scintillation high-energy radiation detector 失效
标题翻译：半导体闪烁高能辐射探测器
公开(公告)号：US20060273258A1
公开(公告)日：2006-12-07
申请号：US11144443
申请日：2005-06-06
申请人： Alexander Kastalsky , Serge Luryi , Boris Spivak
发明人： Alexander Kastalsky , Serge Luryi , Boris Spivak
IPC分类号： G01T1/20
CPC分类号： G01T1/2018
摘要： A high-energy radiation detector is disclosed which uses a semiconductor material to absorb high-energy radiation and emit secondary light in response. The semiconductor is designed to be largely transparent for the interband light it emits so that the generated seciondary photons can reach the semiconductor surface, to be detected by a suitable photo-detector. The semiconductor thus plays a role of a scintillator with the emitted light registered by a photo-detector. Two different device embodiments are disclosed. The first embodiment employs a uniform bulk slab of the appropriately chosen semiconductor, such as n-doped InP. Its principal advantage lies in the simplicity and low cost. The second device employs a multi-layer heterostructure. The principal advantage of the second type detector is the possibility of a substantial enhancement in the efficiency of absorption of the primary high-energy radiation. With appropriate modifications the disclosed detector can be used both for radiation monitoring, like a Gaiger counter, and for high-resolution analysis and characterization of the ionizing radiation.
摘要翻译：公开了一种高能辐射检测器，其使用半导体材料来吸收高能辐射并响应于发射二次光。半导体被设计为对于其发射的带间光而言是很透明的，使得所产生的分离光子可以到达半导体表面，由适当的光检测器检测。因此，半导体起到闪光体的作用，其中发射的光由光检测器记录。公开了两种不同的设备实施例。第一实施例采用适当选择的半导体的均匀块状板，例如n掺杂InP。其主要优点在于简单性和低成本。第二装置采用多层异质结构。第二类型检测器的主要优点是可以显着提高初级高能辐射的吸收效率。通过适当的修改，所公开的检测器既可用于辐射监测，如Gaiger计数器，也可用于电离辐射的高分辨率分析和表征。

18. 发明授权

US06759247B2 Method and apparatus for detecting radiation 失效
公开(公告)号：US06759247B2
公开(公告)日：2004-07-06
申请号：US10322304
申请日：2002-12-18
申请人： Serge Luryi , Vera Gorfinkel , Mikhail Gouzman
发明人： Serge Luryi , Vera Gorfinkel , Mikhail Gouzman
IPC分类号： G01N2176
CPC分类号： G01N21/64
摘要： In analyzing radiation from a sample, single-quanta counting can be used to advantage especially at low levels of radiation energy, e.g. in the detection of fluorescent radiation. Preferred detection techniques include methods in which (i) fluorescence-stimulating radiation is intensity-modulated in accordance with a preselected code, (ii) wherein it is the fluorescent radiation which is intensity-modulated with the preselected code, and (iii) wherein modulation with a preselected code is applied to a sample to influence a property which functionally affects emitted fluorescent radiation. For registration of the signals from a sensing element of a single-photon detector, time of arrival is recorded, optionally in conjunction with registration of time intervals. Advantageously, in the interest of minimizing the number of pulses missed due to close temporal spacing of pulses, D-triggers can be included in counting circuitry.

19. 发明授权

US5889989A Load sharing controller for optimizing monetary cost 失效
标题翻译：负载分配控制器优化货币成本
公开(公告)号：US5889989A
公开(公告)日：1999-03-30
申请号：US714696
申请日：1996-09-16
申请人： Thomas G. Robertazzi , Serge Luryi , Jeeho Sohn
发明人： Thomas G. Robertazzi , Serge Luryi , Jeeho Sohn
IPC分类号： G06F15/177 , G06F9/46 , G06F9/50 , G06F15/16 , G06F9/00
CPC分类号： G06F9/5088 , G06F9/5066
摘要： A load sharing system which minimizes overall costs by assigning segments of a divisible load to distributed processors based on the monetary cost of each processor. The distributed processors are connected to a network such as a local area network or the internet. A controller divides a divisible load and assigns each segment of the load to a processor based on the processor's monetary cost which is a function of its operating cost and its processing speed. The allocation is then optimized by transferring portions of the load from the expensive processors to the cheaper processor while maintaining an acceptable finish time for all processing. The optimization can also be performed for minimizing the finish time of the processors within a cost constraint.
摘要翻译：一种负载共享系统，其通过基于每个处理器的货币成本将可分割负载的分段分配给分布式处理器来最小化总体成本。分布式处理器连接到诸如局域网或因特网之类的网络。控制器划分可分割负载，并根据处理器的运营成本和其处理速度的货币成本分配负载的每个部分到处理器。然后通过将部分负载从昂贵的处理器转移到便宜的处理器，同时为所有处理保持可接受的完成时间来优化分配。还可以执行优化以在成本约束内最小化处理器的完成时间。

20. 发明授权

US5461245A Article comprising a bipolar transistor with floating base 失效
标题翻译：文章包括具有浮底的双极晶体管
公开(公告)号：US5461245A
公开(公告)日：1995-10-24
申请号：US295303
申请日：1994-08-24
申请人： Zinovy S. Gribnikov , Serge Luryi
发明人： Zinovy S. Gribnikov , Serge Luryi
IPC分类号： H01L29/73 , H01L21/331 , H01L29/08 , H01L29/737 , H01L29/86 , H03K19/08 , H01L29/24 , H01L29/161
CPC分类号： H01L29/0813 , H01L29/86 , H03K19/08
摘要： The novel bipolar transistor has at least two separated emitter contacts and no base contact, and the emitter/base p-n junction has backward diode characteristics. The transistor can function as a logic device, but can also function as an amplifying device in digital or analog circuits.
摘要翻译：新颖的双极晶体管具有至少两个分离的发射极触点，没有基极接触，并且发射极/基极p-n结具有反向二极管特性。晶体管可以用作逻辑器件，但也可以用作数字或模拟电路中的放大器件。

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