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11. 发明授权

US06288343B1 Printed circuit board 有权
标题翻译：印刷电路板
公开(公告)号：US06288343B1
公开(公告)日：2001-09-11
申请号：US09414818
申请日：1999-10-08
申请人： Jung-Hyun Ahn , Jong-Hyun Lee
发明人： Jung-Hyun Ahn , Jong-Hyun Lee
IPC分类号： H05K100
CPC分类号： H05K3/4691 , H05K3/361 , H05K2201/0293 , H05K2201/10136
摘要： Disclosed is a printed circuit board including a first layer having a first stacked region, a second stacked region spaced apart from the first stacked region by a selected distance, and a flexible connection part disposed between the first and second stacked regions, and extending to the first stacked region and the second stacked region with selected width and length, the flexible connection part having a conductive pattern layer for signal transmission between the first stacked region and the second stacked region; a pair of second layers disposed apart on an upper surface of each of the first and second stacked regions of the first layer and having a first signal pattern layer on both surfaces of each of the second layers, wherein the first signal pattern layer of the second layer is electrically connected to the conductive pattern of the flexible connection part, a pair of upper metal layers disposed on respective upper surfaces of the second layer, the upper metal layer interposing a first insulating adhesive between the upper metal layer and the second layer, a pair of third layers disposed apart on a lower surface of each of the first and second stacked regions of the first layer and having a second signal pattern layer on both surfaces of each of the third layers, and a pair of lower metal layers disposed on respective lower surfaces of the third layers, the lower metal layer interposing a second insulating adhesive between the lower metal layer and the third layer.
摘要翻译：公开了一种印刷电路板，包括具有第一堆叠区域的第一层，与第一堆叠区域间隔一定距离的第二堆叠区域以及设置在第一和第二堆叠区域之间的柔性连接部分，并且延伸到第一堆叠区域和具有选定宽度和长度的第二堆叠区域，柔性连接部分具有用于在第一堆叠区域和第二堆叠区域之间进行信号传输的导电图案层; 一对第二层，设置在第一层的第一和第二堆叠区域的每一个的上表面上并且在每个第二层的两个表面上具有第一信号图案层，其中第二层的第一信号图案层层与柔性连接部的导电图案电连接，一对上金属层设置在第二层的相应上表面上，上金属层在第一层和第二层之间插入第一绝缘粘合剂，一对第三层，分隔在第一层的第一和第二堆叠区域的每一个的下表面上，并且在每个第三层的两个表面上具有第二信号图案层，以及一对下部金属层，所述第三层的下表面，所述下金属层在所述下金属层和所述第三层之间插入第二绝缘粘合剂。

12. 发明申请

US20120282531A1 ELECTROLYTE FOR RECHARGEABLE LITHIUM BATTERY AND RECHARGEABLE LITHIUM BATTERY INCLUDING THE SAME 有权
标题翻译：用于可充电锂电池和可充电锂电池的电解质
公开(公告)号：US20120282531A1
公开(公告)日：2012-11-08
申请号：US13241133
申请日：2011-09-22
申请人： Duck-Chul Hwang , Eun-Gi Shim , Jong-Hyun Lee , Jong-Su Kim , Young-Min Kim
发明人： Duck-Chul Hwang , Eun-Gi Shim , Jong-Hyun Lee , Jong-Su Kim , Young-Min Kim
IPC分类号： H01M10/056
CPC分类号： H01M10/0567 , H01M4/362 , H01M4/386 , H01M4/483 , H01M4/587 , H01M10/052
摘要： An electrolyte for a rechargeable lithium battery includes a non-aqueous organic solvent, a lithium salt, and an additive. The additive includes a gamma butyrolactone compound substituted with at least one F atom at the α-position.
摘要翻译：用于可再充电锂电池的电解质包括非水有机溶剂，锂盐和添加剂。添加剂包括在α-位被至少一个F原子取代的γ-丁内酯化合物。

13. 发明授权

US08030200B2 Method for fabricating a semiconductor package 有权
标题翻译：半导体封装的制造方法
公开(公告)号：US08030200B2
公开(公告)日：2011-10-04
申请号：US12565171
申请日：2009-09-23
申请人： Yong Sung Eom , Kwang-Seong Choi , Hyun-Cheol Bae , Jong-Hyun Lee , Jong Tae Moon
发明人： Yong Sung Eom , Kwang-Seong Choi , Hyun-Cheol Bae , Jong-Hyun Lee , Jong Tae Moon
IPC分类号： H01L21/44
CPC分类号： H01L24/81 , H01L21/486 , H01L21/563 , H01L23/29 , H01L23/293 , H01L23/49816 , H01L23/49827 , H01L24/16 , H01L24/29 , H01L24/32 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/05644 , H01L2224/05655 , H01L2224/05666 , H01L2224/05669 , H01L2224/1134 , H01L2224/1152 , H01L2224/73104 , H01L2224/73203 , H01L2224/81192 , H01L2224/818 , H01L2224/81801 , H01L2224/83194 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/15787 , H01L2224/13099 , H01L2924/00 , H01L2924/00012 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A method for fabricating a semiconductor package, includes the steps of forming a first terminal at a first substrate; mixing a polymer resin and solder particles to provide a mixture; covering at least one of an upper surface and side surfaces of the first terminal with the mixture; and heating the first substrate at a temperature higher than a melting point of the solder particles of the mixture to form a solder layer that covers the at least one of an upper surface and a side surface of the first terminal. The solder particles flow or diffuse toward the terminal in the heated polymer resin to adhere to at least some of the exposed surfaces of the terminal thereby forming the solder layer. The solder layer improves the adhesive strength between the terminals of the semiconductor chip and the substrate in the subsequent flip chip bonding process.
摘要翻译：一种半导体封装的制造方法，包括在第一基板上形成第一端子的工序; 混合聚合物树脂和焊料颗粒以提供混合物; 用所述混合物覆盖所述第一端子的上表面和侧表面中的至少一个; 以及在高于混合物的焊料颗粒的熔点的温度下加热第一衬底，以形成覆盖第一端子的上表面和侧表面中的至少一个的焊料层。焊料颗粒朝向加热的聚合物树脂中的端子流动或扩散以粘附到端子的至少一些暴露表面，从而形成焊料层。焊料层在随后的倒装芯片接合工艺中提高了半导体芯片的端子与衬底之间的粘合强度。

14. 发明授权

US07965999B2 Apparatus and method for managing integrated authentication for personal mobility in wired/wireless integrated service network 有权
标题翻译：用于管理有线/无线综合业务网络中个人移动性的集成认证的装置和方法
公开(公告)号：US07965999B2
公开(公告)日：2011-06-21
申请号：US11694740
申请日：2007-03-30
申请人： Jung-Hee Bang , Han-Wook Jung , Do-Jin Park , Jong-Hyun Lee
发明人： Jung-Hee Bang , Han-Wook Jung , Do-Jin Park , Jong-Hyun Lee
IPC分类号： H04M1/66
CPC分类号： H04L63/08 , H04L63/0815
摘要： Provided are an integrated authentication processing apparatus for personal mobility in a wired/wireless integrated service network, a method thereof, and a computer-readable recording medium for recording a program that implements the method. The integrated authentication processing method includes the steps of: a) receiving a network service subscription request from a user through the Internet, registering the user as a service subscriber, and storing/managing subscription information of the subscriber; b) receiving the network access request from a user terminal through a network control platform, processing an integrated authentication for network access and additional services, and transmitting the result to the user terminal through the network control platform; and c) processing a charge information process request from the user terminal whose access is allowed according to the authentication result of the step b) by using charge information and session information of the subscriber without additional authentication process.
摘要翻译：提供了一种用于有线/无线综合业务网络中的个人移动性的集成认证处理装置，其方法和用于记录实现该方法的程序的计算机可读记录介质。集成认证处理方法包括以下步骤：a）通过因特网从用户接收网络服务订阅请求，将用户注册为服务订户，以及存储/管理订户的订阅信息; b）通过网络控制平台从用户终端接收网络接入请求，处理网络接入和附加业务的集成认证，并通过网络控制平台将结果发送给用户终端; 以及c）通过使用所述用户的费用信息和会话信息来处理来自其允许访问的用户终端的费用信息处理请求，所述用户终端根据步骤b）的认证结果，而没有附加认证处理。

15. 发明授权

US07656233B2 Apparatus for high power amplifier in wireless communication system 有权
标题翻译：无线通信系统中大功率放大器的装置
公开(公告)号：US07656233B2
公开(公告)日：2010-02-02
申请号：US12019779
申请日：2008-01-25
申请人： Jong-Hyun Lee
发明人： Jong-Hyun Lee
IPC分类号： H03F3/04
CPC分类号： H03F1/301 , H03F3/189 , H03F3/24 , H03F2200/12 , H03F2200/18 , H03F2200/411 , H03F2200/447 , H03F2200/451 , H03F2200/468
摘要： An apparatus for a High Power Amplifier (HPA) in a wireless communication system is provided. In one example, the apparatus includes a temperature sensor for determining temperature, a controller for receiving the determined temperature and for controlling a gate bias voltage corresponding to the determined temperature and an amplifier for amplifying a Radio Frequency (RF) signal by using the controlled gate bias voltage.
摘要翻译：提供了一种用于无线通信系统中的大功率放大器（HPA）的装置。在一个示例中，该装置包括用于确定温度的温度传感器，用于接收所确定的温度并用于控制对应于所确定的温度的栅极偏置电压的控制器和用于通过使用受控门来放大射频（RF）信号的放大器偏压。

16. 发明授权

US07468530B2 Structure and method for failure analysis in a semiconductor device 有权
标题翻译：半导体器件故障分析的结构和方法
公开(公告)号：US07468530B2
公开(公告)日：2008-12-23
申请号：US11291242
申请日：2005-11-30
申请人： Ki-Am Lee , Sang-Deok Kwon , Jong-Hyun Lee
发明人： Ki-Am Lee , Sang-Deok Kwon , Jong-Hyun Lee
IPC分类号： H01L29/74
CPC分类号： G01R31/2884
摘要： In a method and structure for semiconductor failure analysis, the structure comprises: a plurality of analytic fields disposed on a predetermined area of a semiconductor device; semiconductor transistors arranged in each of the analytic fields, the semiconductor transistors arranged in an array; wordlines arranged on each of the plurality of the analytic fields, connecting the semiconductor transistors with each other in a first direction; and bitline structures on each of the plurality of the analytic fields, connecting the semiconductor transistors with each other in a second direction, wherein the bitline structures are configured in different patterns in each of the plurality of analytic fields.
摘要翻译：在半导体故障分析的方法和结构中，该结构包括：设置在半导体器件的预定区域上的多个分析场; 布置在每个分析场中的半导体晶体管，排列成阵列的半导体晶体管; 布置在多个分析场中的每一个上的字线，在第一方向上将半导体晶体管彼此连接; 以及在所述多个分析场中的每一个上的位线结构，在第二方向上将所述半导体晶体管彼此连接，其中所述位线结构在所述多个分析场中的每一个中被配置为不同的图案。

17. 发明申请

US20070134524A1 Fuel cell stack structure 审中-公开
标题翻译：燃料电池堆结构
公开(公告)号：US20070134524A1
公开(公告)日：2007-06-14
申请号：US11636699
申请日：2006-12-08
申请人： Kyu-Taek Cho , Yoo-Chang Yang , Jong-Hyun Lee , Tae-Won Lim
发明人： Kyu-Taek Cho , Yoo-Chang Yang , Jong-Hyun Lee , Tae-Won Lim
IPC分类号： H01M8/24
CPC分类号： H01M8/248 , H01M8/0247 , H01M8/0267 , H01M8/04007 , H01M8/04201 , H01M8/2404 , H01M8/242 , H01M8/2465 , H01M8/2483 , H01M8/2484 , H01M8/249
摘要： A fuel cell stack structure comprising a unit module, common distributor, and bus bar is disclosed. The unit module comprises fuel cells, current collecting plates, insulating plates, end plates, and fixing bands.
摘要翻译：公开了一种包括单元模块，公共分配器和母线的燃料电池堆结构。单元模块包括燃料电池，集流板，绝缘板，端板和固定带。

18. 发明申请

US20050046868A1 System for monitoring optical output/wavelength 失效
标题翻译：监控光输出/波长的系统
公开(公告)号：US20050046868A1
公开(公告)日：2005-03-03
申请号：US10802095
申请日：2004-03-15
申请人： Jong-Deog Kim , Byung-Seok Choi , Jong-Hyun Lee , Hogyeong Yun , Kwang-Seong Choi , Jong-Tae Moon
发明人： Jong-Deog Kim , Byung-Seok Choi , Jong-Hyun Lee , Hogyeong Yun , Kwang-Seong Choi , Jong-Tae Moon
IPC分类号： H04B10/08 , G01B9/02 , G02B6/34 , H01S5/024 , H01S5/0683
CPC分类号： H01S5/0612 , H01S5/0683 , H01S5/0687
摘要： A system for monitoring an optical output/wavelength is employed to be used for a WDM system having a narrow channel space by structuring an etalon and photodiode as an integrated structure. The system includes: a laser source control unit for controlling the laser source; an optical/wavelength monitoring unit for monitoring an optical output/wavelength of the controlled laser source; a TEC control unit for controlling a TEC in order to constantly maintain the laser source of the optical output/wavelength monitoring unit to have a predetermined temperature; a temperature control unit for controlling a heater and a thermistor to set an etalon to a predetermined temperature, wherein the heater is attached on the optical output/wavelength monitoring unit and the thermistor is attached on the heater; a comparison unit for comparing the optical output signal and the wavelength signal, each of which is monitored by the optical output/wavelength monitoring unit; and a processing unit for comparing values of the compared signals with a preset value to control an input current or a temperature of the laser source.
摘要翻译：用于监测光输出/波长的系统被用于通过构造标准具和光电二极管作为一体结构而具有窄通道空间的WDM系统。该系统包括：用于控制激光源的激光源控制单元; 用于监测受控激光源的光输出/波长的光/波长监测单元; 用于控制TEC的TEC控制单元，以便将光输出/波长监视单元的激光源恒定地保持为预定温度; 温度控制单元，用于控制加热器和热敏电阻以将标准具设定到预定温度，其中加热器安装在光输出/波长监测单元上，热敏电阻附着在加热器上; 比较单元，用于比较光输出信号和波长信号，每个波长信号由光输出/波长监测单元监视; 以及处理单元，用于将比较的信号的值与预设值进行比较，以控制激光源的输入电流或温度。

19. 发明授权

US06822214B2 Optical signal receiving apparatus and method using the same 有权
标题翻译：光信号接收装置及其使用方法
公开(公告)号：US06822214B2
公开(公告)日：2004-11-23
申请号：US10283946
申请日：2002-10-30
申请人： Jin-Soo Han , Moo-Jung Chu , Jong-Hyun Lee
发明人： Jin-Soo Han , Moo-Jung Chu , Jong-Hyun Lee
IPC分类号： H01J4014
CPC分类号： H04B10/697
摘要： Provided are an optical signal receiving apparatus whose optimum receiving performance is maintained regardless of a change in the power of an optical signal, and a method using the same. The apparatus includes an optical coupler for dividing an input optical signal at a predetermined ratio to produce first and second divided signals, a photoelectric converter for converting the first divided signal into an electric signal, an amplifier for amplifying the electric signal within a predetermined range centering on a reference voltage, a reference voltage controlling unit for detecting the power of the second divided signal, predicting the power of the first divided signal, and controlling the amplitude of the reference voltage in accordance with the predicted power, and a clock & data recovery unit for recovering a clock signal and data from a signal output from the amplifier. Even if the power of an optical signal changes, the reference voltage of a limiting amplifier, which is best suitable for optimum performance with respect to the power of an input optical signal, can be detected and adjusted using the method and apparatus, thereby maintaining the optimum receiving performance of the optical signal receiving apparatus.
摘要翻译：提供了一种光信号接收装置及其使用方法的光接收装置，其优良的接收性能被保持，而与光信号的功率的变化无关。该装置包括用于以预定比例分割输入光信号以产生第一和第二分频信号的光耦合器，用于将第一划分信号转换为电信号的光电转换器，用于在预定范围内放大电信号的放大器对中在参考电压上，参考电压控制单元，用于检测第二分频信号的功率，预测第一分频信号的功率，并根据预测功率控制参考电压的振幅;以及时钟和数据恢复用于从放大器输出的信号中恢复时钟信号和数据的单元。即使光信号的功率发生变化，也可以使用该方法和装置来检测和调整限制放大器的参考电压，该极限放大器最适合于对于输入光信号的功率的最佳性能，从而保持光信号接收装置的最佳接收性能。

20. 发明授权

US06627519B2 Method of manufacturing an SOI (silicon on insulator) wafer 失效
标题翻译：制造SOI（绝缘体上硅）晶片的方法
公开(公告)号：US06627519B2
公开(公告)日：2003-09-30
申请号：US09963440
申请日：2001-09-27
申请人： Yong-Bum Kwon , Jong-Hyun Lee
发明人： Yong-Bum Kwon , Jong-Hyun Lee
IPC分类号： H01L2130
CPC分类号： H01L21/76254
摘要： This invention is to manufacturing of SOI (Silicon On Insulator) wafer; with respect to manufacturing of SOI wafer, preparation process of silicon wafer with desired thickness (100), deposition of Alumina (Al2O3) as insulator by an ALE (Atomic Layer Epitaxial) method such as ALCVD, ALD, ASCVD, etc . . . (110), bonding of this wafer with another silicon wafer by various bonding methods (120), Cutting of this bonded wafer by various methods of cutting (130), Polishing the surface of the cut wafer (140). For the insulator material, titanium oxide (TiO2) or tantalum oxide (Ta2O5) can be used other than Alumina (Al2O3) and such bonding process can be done by unibonding method and cutting method can be done by Smart Cut process.
摘要翻译：本发明是制造SOI（绝缘体上硅）晶片; 关于SOI晶片的制造，具有期望厚度（100）的硅晶片的制备工艺，通过ALC（原子层外延）方法诸如ALCVD，ALD，ASCVD等沉积氧化铝（Al 2 O 3）作为绝缘体。。。（110），通过各种粘合方法（120）将该晶片与另一硅晶片接合，通过各种切割方法切割该接合晶片（130），抛光切割晶片（140）的表面。对于绝缘体材料，可以使用除氧化铝（Al2O3）之外的氧化钛（TiO 2）或氧化钽（Ta 2 O 5），并且这种接合工艺可以通过单粘合方法进行，切割方法可以通过智能切割工艺进行。

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