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    • 13. 发明申请
    • RETROPEPTIDES, ANTIBODIES THERETO, AND USES THEREOF FOR VACCINATION AND IN VITRO DIAGNOSIS
    • 复发,抗体及其用于疫苗接种和体外诊断的用途
    • WO1995024916A1
    • 1995-09-21
    • PCT/FR1995000292
    • 1995-03-13
    • CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUEGUICHARD, GillesMULLER, SylvianeBRIAND, Jean-PaulREGENMORTEL, Marc
    • CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
    • A61K38/17
    • C07K16/18A61K38/00A61K39/00C07K5/0212C07K7/02C07K14/47Y02A50/386
    • The invention discloses the use of (1) peptide compounds in which at least one and advantageously all of the -CO-NH- bonds in the peptide chain of the corresponding parent peptide (comprising no -NH-CO- bond in its peptide chain) is (are) replaced with one or more -NH-CO- bonds, the chirality of every aminoacyl residue, whether or not it contributes to the one or more above-mentioned -NH-CO- bonds, being either maintained or reversed relative to the corresponding aminoacyl residues constituting said parent peptide, said peptide compounds also being known as immunoretroids; or (2) antibodies to said immunoretroids (anti-immunoretroid antibodies); said immunoretroids being capable of forming a complex with said anti-immunoretroid antibodies as well as with antibodies to the parent proteins or peptides (known as anti-parent antibodies), and/or to the enantiomers of such parent proteins or peptides; for preparing a drug which is particularly useful for treating or preventing diseases related to the presence in the body of an individual of an exogenous or endogenous protein capable of being recognised by the above-mentioned anti-parent or anti-immunoretroid antibodies.
    • 本发明公开了使用(1)肽化合物,其中相应亲本肽(其肽链中不含-NH-CO-键)的肽链中至少一个且有利地全部-CO-NH-键 被一个或多个-NH-CO-键取代,每个氨酰基残基的手性不管是否对上述一个或多个-NH-CO-键有贡献,相对于 构成所述亲本肽的相应氨酰基残基,所述肽化合物也被称为免疫反相物; 或(2)针对所述免疫反应性的抗体(抗免疫反应性抗体); 所述免疫型甲状腺能够与所述抗免免反应性抗体以及与亲本蛋白质或肽(称为抗亲本抗体)的抗体形成复合物,和/或与所述亲本蛋白质或肽的对映异构体形成复合物; 用于制备药物,其特别可用于治疗或预防与能够被上述抗亲本或抗免免型抗体抗体识别的外源或内源性蛋白质在体内存在相关的疾病。
    • 15. 发明申请
    • MEMORY CELL INSENSITIVE TO HEAVY ION COLLISIONS
    • 记忆细胞对重离子碰撞无效
    • WO1994022143A1
    • 1994-09-29
    • PCT/FR1994000287
    • 1994-03-16
    • CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUEBESSOT, DenisVELAZCO, Raoul
    • CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
    • G11C11/412
    • G11C11/4125
    • A memory cell comprising two assemblies each including first to third transistors (MP1, MN1, MN5; MP2, MN2, MN6) mounted in series between high (Vdd) and low (Vss) potentials and having p-, n- and n-channels respectively. The gate of one n-channel transistor in each assembly is connected to the output node (Q, Q*) of the other assembly while the gate of the other n-channel transistor in each assembly is connected to the gate of the first transistor in the same assembly. A fourth p-channel transistor (MP3, MP5) combined with each assembly is arranged between the high potential (Vdd) and the gate of the first transistor (MP1, MP2) in the assembly. A fifth p-channel transistor (MP4, MP6) combined with each assembly is arranged between the gate of the first transistor in the assembly and a read/write line (RW) or the low potential (Vss).
    • 一种存储单元,包括两个组件,每个组件包括串联安装在高(Vdd)和低(Vss)电位之间并且具有p,n和n通道的第一至第三晶体管(MP1,MN1,MN5; MP2,MN2,MN6) 分别。 每个组件中的一个n沟道晶体管的栅极连接到另一组件的输出节点(Q,Q *),而每个组件中另一个n沟道晶体管的栅极连接到第一晶体管的栅极 同一个装配。 与组件中的每一组合组合的第四个P沟道晶体管(MP3,MP5)被布置在组件中的高电位(Vdd)和第一晶体管(MP1,MP2)的栅极之间。 与组件结合的第五个p沟道晶体管(MP4,MP6)被布置在组件中的第一晶体管的栅极和读/写线(RW)或低电位(Vss)之间。