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11. 发明申请

WO2005101516A2 SEQUENTIALLY CHARGED NANOCRYSTAL LIGHT EMITTING DEVICE 审中-公开
标题翻译：按顺序充电的纳米级发光器件
公开(公告)号：WO2005101516A2
公开(公告)日：2005-10-27
申请号：PCT/US2005011640
申请日：2005-04-06
申请人： CALIFORNIA INST OF TECHN , ATWATER HARRY A , WALTERS ROBERT J
发明人： ATWATER HARRY A , WALTERS ROBERT J
IPC分类号： H01L29/06 , H01L33/00 , H01L33/08 , H01L33/16
CPC分类号： H01L33/16 , B82Y20/00 , H01L33/0004 , H01L33/0041 , H01L33/08 , Y10S977/95
摘要： A light emitting device including a transistor structure formed on a semiconductor substrate. The transistor structure having a source region, a drain region, a channel region between the source and drain regions, and a gate oxide on the channel region. The light emitting device including a plurality of nanocrystals embedded in the gate oxide, and a gate contact made of semitransparent or transparent material formed on the gate oxide. The nanocrystals are adapted to be first charged with first type charge carriers, and then provided second type charge carriers, such that the first and second type charge carriers form excitons used to emit light.
摘要翻译：一种发光器件，包括形成在半导体衬底上的晶体管结构。晶体管结构具有源极区，漏极区，源区和漏区之间的沟道区以及沟道区上的栅极氧化物。该发光器件包括嵌入栅极氧化物中的多个纳米晶体，以及由栅极氧化物上形成的半透明或透明材料制成的栅极接触。纳米晶体适于首先带有第一类型的电荷载体，然后提供第二类型的载流子，使得第一和第二类型的载流子形成用于发光的激子。

12. 发明申请

WO2014165836A8 NANOSCALE PLASMONIC FIELD-EFFECT MODULATOR 审中-公开
标题翻译：纳米级PLASMONIC场效应调制器
公开(公告)号：WO2014165836A8
公开(公告)日：2015-10-29
申请号：PCT/US2014033104
申请日：2014-04-04
申请人： CALIFORNIA INST OF TECHN
发明人： LEE HO WAI , BURGOS STANLEY , PAPADAKIS GEORGIA , ATWATER HARRY A
IPC分类号： G02B6/122 , G02B6/26
CPC分类号： G02B5/008 , B82Y20/00 , G02B6/1226 , G02F1/011 , G02F1/025 , G02F1/0356 , G02F2001/0151 , G02F2201/12 , G02F2203/10 , G02F2203/15 , Y10S977/932
摘要： A plasmonic device has a transparent conducting oxide (TCO) waveguide and a tunable voltage applied across the TCO and a metal layer for modulating an input optical signal. The plasmonic device comprises a substrate, the metal layer on the substrate and having a grooved channel, a dielectric layer on the metal layer and in the grooved channel, and the transparent conducting oxide (TCO) on the dielectric layer and in the grooved channel.
摘要翻译：等离子体激元器件具有透明导电氧化物（TCO）波导和跨TCO施加的可调谐电压和用于调制输入光信号的金属层。等离子体激元器件包括衬底，衬底上的金属层，并且具有沟槽沟道，金属层上的沟槽沟槽中的电介质层以及介电层和沟槽沟道中的透明导电氧化物（TCO）。

13. 发明申请

WO2011156042A3 HETEROJUNCTION WIRE ARRAY SOLAR CELLS 审中-公开
标题翻译：异位阵列太阳能电池
公开(公告)号：WO2011156042A3
公开(公告)日：2012-04-19
申请号：PCT/US2011029663
申请日：2011-03-23
申请人： CALIFORNIA INST OF TECHN , TAMBOLI ADELE , TURNER-EVANS DANIEL B , MALHOTRA MANAV , ATWATER HARRY A
发明人： TAMBOLI ADELE , TURNER-EVANS DANIEL B , MALHOTRA MANAV , ATWATER HARRY A
IPC分类号： H01L31/042 , H01L31/18
CPC分类号： H01L31/035227 , H01L31/035281 , H01L31/073 , H01L31/0735 , H01L31/0745 , H01L31/0749 , H01L31/1804 , H01L31/1828 , H01L31/184 , Y02E10/52 , Y02E10/541 , Y02E10/543 , Y02E10/544 , Y02E10/547 , Y02P70/521
摘要： This disclosure relates to structures for the conversion of light into energy. More specifically, the disclosure describes devices for conversion of light to electricity using ordered arrays of semiconductor wires coated in a wider band-gap material.
摘要翻译：本公开涉及将光转换成能量的结构。更具体地，本公开描述了使用涂覆在更宽带隙材料中的半导体线的有序阵列来将光转换成电的装置。

14. 发明申请

WO2011066570A3 SEMICONDUCTOR WIRE ARRAY STRUCTURES, AND SOLAR CELLS AND PHOTODETECTORS BASED ON SUCH STRUCTURES 审中-公开
标题翻译：半导体线阵结构，以及基于这种结构的太阳能电池和光电探测器
公开(公告)号：WO2011066570A3
公开(公告)日：2011-11-10
申请号：PCT/US2010058422
申请日：2010-11-30
申请人： CALIFORNIA INST OF TECHN , KELZENBERG MICHAEL D , ATWATER HARRY A , BIGGS RYAN M , BOETTCHER SHANNON W , LEWIS NATHAN S , PETYKIEWICZ JAN A
发明人： KELZENBERG MICHAEL D , ATWATER HARRY A , BIGGS RYAN M , BOETTCHER SHANNON W , LEWIS NATHAN S , PETYKIEWICZ JAN A
IPC分类号： H01L31/042 , H01L31/0236
CPC分类号： H01L31/035281 , H01L31/022425 , H01L31/0547 , H01L31/056 , H01L31/068 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A structure comprising an array of semiconductor structures, an infill material between the semiconductor materials, and one or more light-trapping elements is described. Photoconverters and photoelectrochemical devices based on such structure also described.
摘要翻译：描述了包括半导体结构阵列，半导体材料之间的填充材料以及一个或多个光捕获元件的结构。还描述了基于这种结构的光转换器和光电化学装置。

15. 发明申请

WO2011093967A3 LIGHT-TRAPPING PLASMONIC BACK REFLECTOR DESIGN FOR SOLAR CELLS 审中-公开
标题翻译：用于太阳能电池的轻量级回波反射器设计
公开(公告)号：WO2011093967A3
公开(公告)日：2011-10-06
申请号：PCT/US2010062100
申请日：2010-12-23
申请人： CALIFORNIA INST OF TECHN , ATWATER HARRY A , FERRY VIVIAN , POLMAN ALBERT , SCHROPP RUUD , VERSCHUUREN MARC
发明人： ATWATER HARRY A , FERRY VIVIAN , POLMAN ALBERT , SCHROPP RUUD , VERSCHUUREN MARC
IPC分类号： H01L31/042
CPC分类号： H01L31/075 , B82Y20/00 , G02B6/1226 , H01L31/022425 , H01L31/0236 , H01L31/02363 , H01L31/056 , Y02E10/52 , Y02E10/548
摘要： A solar cell includes a nano-scale patterned back contact layer; a spacer layer on the nano-scale patterned back contact layer; a semiconductor layer on the spacer layer; and a light transmissive first electrode on the semiconductor layer.
摘要翻译：太阳能电池包括纳米级图案化的背接触层; 在纳米尺度图案化的背接触层上的间隔层; 间隔层上的半导体层; 以及半导体层上的透光第一电极。

16. 发明申请

WO2011066529A3 THREE-DIMENSIONAL PATTERNING METHODS AND RELATED DEVICES 审中-公开
标题翻译：三维图案方法及相关设备
公开(公告)号：WO2011066529A3
公开(公告)日：2011-10-06
申请号：PCT/US2010058314
申请日：2010-11-30
申请人： CALIFORNIA INST OF TECHN , PUTNAM MORGAN C , KELZENBERG MICHAEL D , ATWATER HARRY A , BOETTCHER SHANNON W , LEWIS NATHAN S , SPURGEON JOSHUA M , TURNER-EVANS DANIEL B , WARREN EMILY L
发明人： PUTNAM MORGAN C , KELZENBERG MICHAEL D , ATWATER HARRY A , BOETTCHER SHANNON W , LEWIS NATHAN S , SPURGEON JOSHUA M , TURNER-EVANS DANIEL B , WARREN EMILY L
IPC分类号： H01L31/042 , B82B1/00
CPC分类号： H01L31/035281 , H01L31/022425 , H01L31/0547 , H01L31/056 , H01L31/068 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： Three-dimensional patterning methods of a three-dimensional microstructure, such as a semiconductor wire array, are described, in conjunction with etching and/or deposition steps to pattern the three-dimensional microstructure.
摘要翻译：结合用于对三维微结构进行图案化的蚀刻和/或沉积步骤，描述了诸如半导体线阵列的三维微结构的三维图案化方法。

17. 发明公开

EP3063592A4 DIRECT PHOTOPATTERNING OF ROBUST AND DIVERSE MATERIALS 有权
标题翻译： DIREKTE FOTOSTRUKTURIERUNG VON ROBUSTEN UND UNTERSCHIEDLICHEN MATERIALIEN
公开(公告)号：EP3063592A4
公开(公告)日：2017-06-28
申请号：EP14857174
申请日：2014-10-03
申请人： CALIFORNIA INST OF TECHN
发明人： ATWATER HARRY A , WEITEKAMP RAYMOND , GRUBBS ROBERT H , FAKONAS JAMES
IPC分类号： G03F7/004 , G03F7/029
CPC分类号： A61L27/16 , A61L27/50 , C08F232/08 , C08G61/08 , C08G2261/1426 , C08G2261/1432 , C08G2261/3325 , C08G2261/3342 , C08G2261/90 , C08G2261/94 , C08L65/00 , G03F7/0042 , G03F7/029

18. 发明公开

EP2981858A4 NANOSCALE PLASMONIC FIELD-EFFECT MODULATOR 有权转让
标题翻译： NANOSKALIGER PLASMONENFELDEFFEKTMODULATOR
公开(公告)号：EP2981858A4
公开(公告)日：2016-12-21
申请号：EP14778727
申请日：2014-04-04
申请人： CALIFORNIA INST OF TECHN
发明人： LEE HO WAI , BURGOS STANLEY , PAPADAKIS GEORGIA , ATWATER HARRY A
IPC分类号： G02F1/01 , G02B6/122 , G02B6/26
CPC分类号： G02B5/008 , B82Y20/00 , G02B6/1226 , G02F1/011 , G02F1/025 , G02F1/0356 , G02F2001/0151 , G02F2201/12 , G02F2203/10 , G02F2203/15 , Y10S977/932
摘要： A plasmonic device having a transparent conducting oxide (TCO) waveguide and a tunable voltage applied across the TCO and a metal layer for modulating an input optical signal.

19. 发明公开

EP1782459A4 METHOD FOR FABRICATING CRYSTALLINE SILICON 审中-公开
标题翻译：工艺生产结晶硅
公开(公告)号：EP1782459A4
公开(公告)日：2010-04-07
申请号：EP04810047
申请日：2004-10-26
申请人： CALIFORNIA INST OF TECHN
发明人： RICHARDSON CHRISTINE E , ATWATER HARRY A
IPC分类号： H01L21/335 , H01L21/00 , H01L21/12 , H01L21/36 , H01L21/76 , H01L21/84
CPC分类号： C30B1/023 , C30B29/06 , H01L21/02422 , H01L21/02532 , H01L21/02672

20. 发明申请

WO2013116320A2 METHOD OF MAKING PHOTOVOLTAIC DEVICES WITH REDUCED CONDUCTION BAND OFFSET BETWEEN PNICTIDE ABSORBER FILMS AND EMITTER FILMS 审中-公开
标题翻译：制造具有降低的PN光吸收膜和发射极膜之间的导带偏移的光伏器件的方法
公开(公告)号：WO2013116320A2
公开(公告)日：2013-08-08
申请号：PCT/US2013023819
申请日：2013-01-30
申请人： DOW GLOBAL TECHNOLOGIES LLC , CALIFORNIA INST OF TECHN , BOSCO JEFFREY P , KIMBALL GREGORY M , ATWATER HARRY A , LEWIS NATHAN S , KRISTINE-LIGMAN FEIST REBEKAH , DEGROOT MARTY W
发明人： BOSCO JEFFREY P , KIMBALL GREGORY M , ATWATER HARRY A , LEWIS NATHAN S , KRISTINE-LIGMAN FEIST REBEKAH , DEGROOT MARTY W
IPC分类号： H01L31/18
CPC分类号： H01L31/072 , H01L31/022466 , H01L31/032 , H01L31/18 , Y02E10/50
摘要： The principles of the present invention are used to reduce the conduction band offset between chalcogenide emitter and pnictide absorber films. Alternatively stated, the present invention provides strategies to more closely match the electron affinity characteristics between the absorber and emitter components. The resultant photovoltaic devices have the potential to have higher efficiency and higher open circuit voltage. The resistance of the resultant junctions would be lower with reduced current leakage. In illustrative modes of practice, the present invention incorporates one or more tuning agents into the emitter layer in order to adjust the electron affinity characteristics, thereby reducing the conduction band offset between the emitter and the absorber. In the case of an n-type emitter such as ZnS or a tertiary compound such as zinc sulfide selenide (optionally doped with Al) or the like, an exemplary tuning agent is Mg when the absorber is a p-type pnictide material such as zinc phosphide or an alloy of zinc phosphide incorporating at least one additional metal in addition to Zn and optionally at least one non-metal in addition to phosphorus. Consequently, photovolotaic devices incorporating such films would demonstrate improved electronic performance.
摘要翻译：本发明的原理用于降低硫族化合物发射器与磷酸酯吸收剂膜之间的导带偏移。换言之，本发明提供了更接近地匹配吸收器和发射器组件之间的电子亲和特性的策略。所得到的光伏器件具有更高的效率和更高的开路电压的潜力。随着电流泄漏减少，所得到的结点的电阻将会降低。在示例性实践模式中，本发明将一种或多种调谐剂结合到发射极层中，以便调整电子亲和特性，由此减小发射器和吸收器之间的导带偏移。在诸如ZnS的n型发射体或诸如硫化锌硒化物（任选地掺杂有Al）等的三元化合物的情况下，当吸收体是诸如锌的p型磷化物材料时，示例性调谐剂是Mg 磷化物或磷化锌的合金，除了Zn之外还加入至少一种附加金属，并且除了磷之外还可选地加入至少一种非金属。因此，包含这种薄膜的光伏设备将表现出改进的电子性能。

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