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11. 发明授权

US06459482B1 Grainless material for calibration sample 失效
标题翻译：用于校准样品的粗糙材料
公开(公告)号：US06459482B1
公开(公告)日：2002-10-01
申请号：US09729294
申请日：2000-12-04
申请人： Bhanwar Singh , Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Michael K. Templeton , Sanjay K. Yedur , Bryan K. Choo
发明人： Bhanwar Singh , Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Michael K. Templeton , Sanjay K. Yedur , Bryan K. Choo
IPC分类号： G01J110
CPC分类号： H01J37/28 , H01J2237/2826
摘要： The present invention provides SEM systems, SEM calibration standards, and SEM calibration methods that improved accuracy in critical dimension measurements. The calibration standards have features formed with an amorphous material such as amorphous silicon. Amorphous materials lack the crystal grain structure of materials such as polysilicon and are capable of providing sharper edged features and higher accuracy patterns than grained materials. The amorphous material can be bound to a silicon wafer substrate through an intermediate layer of material, such as silicon dioxide. Where the intermediate layer is insulating material, as is silicon dioxide, the intermediate layer may be patterned with gaps to provide for electrical communication between the amorphous silicon and the silicon wafer. Charges imparted to the amorphous silicon during electron beam scanning may thereby drain to the silicon wafer rather than accumulating to a level where they would distort the electron beam.
摘要翻译：本发明提供SEM系统，SEM校准标准和SEM校准方法，提高了临界尺寸测量的精度。校准标准品具有非晶体材料如非晶硅形成的特征。无定形材料缺乏诸如多晶硅的材料的晶粒结构，并且能够提供比颗粒材料更尖锐的边缘特征和更高精度的图案。非晶材料可以通过诸如二氧化硅的材料的中间层与硅晶片衬底结合。在中间层是绝缘材料的情况下，如二氧化硅那样，中间层可以用间隙图案化以提供非晶硅和硅晶片之间的电连通。因此，在电子束扫描期间赋予非晶硅的电荷可以从而被排出到硅晶片，而不是积聚到它们会使电子束变形的水平。

12. 发明授权

US06445072B1 Deliberate void in innerlayer dielectric gapfill to reduce dielectric constant 有权
标题翻译：内层介质间隙填料中的有意的空隙以降低介电常数
公开(公告)号：US06445072B1
公开(公告)日：2002-09-03
申请号：US09617158
申请日：2000-07-17
申请人： Ramkumar Subramanian , Bhanwar Singh , Michael K. Templeton , Bharath Rangarajan
发明人： Ramkumar Subramanian , Bhanwar Singh , Michael K. Templeton , Bharath Rangarajan
IPC分类号： H01L214763
CPC分类号： H01L21/7682 , Y10S977/897
摘要： One aspect of the present invention relates to a method of forming an innerlayer dielectric, involving the steps of providing a substrate having at least two metal lines thereon; providing a conformal insulation layer over the substrate and metal lines; forming a second insulation layer over the conformal insulation layer, the second insulation layer containing a void positioned between two metal lines; at least one of thinning and planarizing the second insulation layer; and forming a third insulation layer over the second insulation layer. Another aspect of the present invention relates to an innerlayer dielectric semiconductor structure, containing a semiconductor substrate having at least two metal lines thereon; a conformal insulation layer over the semiconductor substrate and metal lines, the conformal insulation layer having a substantially uniform thickness from about 250 Å to about 5,000 Å; a second insulation layer over the conformal insulation layer, the second insulation layer containing a void positioned between two metal lines; and a third insulation layer over the second insulation layer.
摘要翻译：本发明的一个方面涉及一种形成内层电介质的方法，包括以下步骤：提供其上具有至少两条金属线的基底; 在衬底和金属线上提供保形绝缘层; 在所述保形绝缘层上形成第二绝缘层，所述第二绝缘层包含位于两条金属线之间的空隙; 将所述第二绝缘层变薄和平坦化的至少一个; 以及在所述第二绝缘层上形成第三绝缘层。本发明的另一方面涉及一种内层电介质半导体结构，其包含其上具有至少两条金属线的半导体衬底; 半导体衬底和金属线上的共形绝缘层，保形绝缘层具有从大约至大约等于的大致均匀的厚度; 在保形绝缘层之上的第二绝缘层，所述第二绝缘层包含位于两个金属线之间的空隙; 以及在所述第二绝缘层上的第三绝缘层。

13. 发明授权

US06354133B1 Use of carbon nanotubes to calibrate conventional tips used in AFM 失效
标题翻译：使用碳纳米管校准AFM中使用的常规提示
公开(公告)号：US06354133B1
公开(公告)日：2002-03-12
申请号：US09729293
申请日：2000-12-04
申请人： Sanjay K. Yedur , Bhanwar Singh , Bryan K. Choo , Michael K. Templeton , Ramkumar Subramanian
发明人： Sanjay K. Yedur , Bhanwar Singh , Bryan K. Choo , Michael K. Templeton , Ramkumar Subramanian
IPC分类号： G01B528
CPC分类号： G01Q40/02 , G01Q40/00 , Y10S977/742 , Y10S977/842 , Y10S977/849 , Y10S977/85 , Y10S977/876 , Y10S977/901
摘要： The present invention provides systems, methods, and standards for calibrating nano-measuring devices. Calibration standards of the invention include carbon nanotubes and methods of the invention involve scanning carbon nanotubes using nano-scale measuring devices. The widths of the carbon nanotube calibration standards are known with a high degree of accuracy. The invention allows calibration of a wide variety of nano-scale measuring devices, taking into account many, and in some cases all, of the systematic errors that may affect a nano-scale measurement. The invention may be used to accurately calibrate line width, line height, and trench width measurements and may be used to precisely characterize both scanning probe microscope tips and electron microscope beams.
摘要翻译：本发明提供了用于校准纳米测量装置的系统，方法和标准。本发明的校准标准包括碳纳米管，本发明的方法涉及使用纳米级测量装置扫描碳纳米管。碳纳米管校准标准品的宽度以高精度已知。考虑到可能影响纳米尺度测量的许多系统误差以及在所有这些系统误差中，本发明允许校准各种各样的纳米尺度的测量装置。本发明可以用于精确校准线宽，线高度和沟槽宽度测量，并且可以用于精确地表征扫描探针显微镜尖端和电子显微镜束。

14. 发明授权

US06326231B1 Use of silicon oxynitride ARC for metal layers 有权
标题翻译：氧氮化硅ARC用于金属层
公开(公告)号：US06326231B1
公开(公告)日：2001-12-04
申请号：US09207562
申请日：1998-12-08
申请人： Ramkumar Subramanian , Bhanwar Singh , Sanjay K. Yedur , Marina V. Plat , Christopher F. Lyons , Bharath Rangarajan , Michael K. Templeton
发明人： Ramkumar Subramanian , Bhanwar Singh , Sanjay K. Yedur , Marina V. Plat , Christopher F. Lyons , Bharath Rangarajan , Michael K. Templeton
IPC分类号： H01L2100
CPC分类号： H01L21/32139 , H01L21/0276 , H01L21/3143 , H01L21/3145
摘要： In one embodiment, the present invention relates to a method of forming a silicon oxynitride antireflection coating over a metal layer, involving the steps of providing a semiconductor substrate comprising the metal layer over at least part of the semiconductor substrate; depositing a silicon oxynitride layer over the metal layer having a thickness from about 100 Å to about 150 Å; and forming an oxide layer having a thickness from about 5 Å to about 50 Å over the silicon oxynitride layer to provide the silicon oxynitride antireflection coating. In another embodiment, the present invention relates to a method of reducing an apparent reflectivity of a metal layer having a first reflectivity in a semiconductor structure, involing forming a silicon oxynitride antireflection coating over the metal layer; wherein the silicon oxynitride antireflection coating formed over the metal layer has a second reflectivity and is formed by depositing silicon oxynitride on the metal layer by chemical vapor deposition and forming an oxide layer over the oxynitride, and the difference between the first reflectivity and the second reflectivity is at least about 60%.
摘要翻译：在一个实施方案中，本发明涉及在金属层上形成氮氧化硅抗反射涂层的方法，包括以下步骤：在半导体衬底的至少一部分上提供包括金属层的半导体衬底; 在所述金属层上沉积厚度为约至约的氧氮化硅层; 并在氮氧化硅层上形成厚度约为5-20埃的氧化物层，以提供氮氧化硅抗反射涂层。在另一个实施方案中，本发明涉及一种在半导体结构中减少具有第一反射率的金属层的表观反射率的方法，包括在金属层上形成氮氧化硅抗反射涂层; 其中形成在所述金属层上的所述氧氮化硅抗反射涂层具有第二反射率，并且通过化学气相沉积在所述金属层上沉积氧氮化硅并在所述氧氮化物上形成氧化物层，并且所述第一反射率和所述第二反射率之间的差异至少约60％。

15. 发明授权

US06828162B1 System and method for active control of BPSG deposition 有权
标题翻译：用于主动控制BPSG沉积的系统和方法
公开(公告)号：US06828162B1
公开(公告)日：2004-12-07
申请号：US09894434
申请日：2001-06-28
申请人： Arvind Halliyal , Bhanwar Singh , Michael K. Templeton , Ramkumar Subramanian
发明人： Arvind Halliyal , Bhanwar Singh , Michael K. Templeton , Ramkumar Subramanian
IPC分类号： H01L2100
CPC分类号： H01L21/67253 , G01N21/4738 , H01L21/02129 , H01L21/31625
摘要： A system for monitoring and controlling a boron phosphorous doped silicon oxide (BPSG) deposition and reflow process is provided. The system includes one or more light sources, each light source directing light to one or more portions of a wafer upon which BPSG is deposited. Light reflected from the BPSG is collected by a measuring system, which processes the collected light. Light passing through the BPSG may similarly be collected by the measuring system, which processes the collected light. The collected light is indicative of the conformality of the BPSG deposition of the respective portions of the wafer. The measuring system provides BPSG deposition related data to a processor that determines the BPSG deposition of the respective portions of the wafer. The system also includes a plurality of reflow controlling devices, each such device corresponding to a respective portion of the wafer and providing for the heating and/or cooling thereof. The processor selectively controls the reflow controlling devices so as to regulate temperature of the respective portions of the wafer.
摘要翻译：提供了一种用于监测和控制硼磷掺杂氧化硅（BPSG）沉积和回流工艺的系统。该系统包括一个或多个光源，每个光源将光引导到沉积BPSG的晶片的一个或多个部分。从BPSG反射的光被测量系统收集，该系统处理收集的光。通过BPSG的光可以类似地由处理所收集的光的测量系统收集。所收集的光表示晶片的各个部分的BPSG沉积的一致性。测量系统将BPSG沉积相关数据提供给确定晶片各部分的BPSG沉积的处理器。该系统还包括多个回流控制装置，每个这样的装置对应于晶片的相应部分并提供加热和/或冷却。处理器选择性地控制回流控制装置，以便调节晶片各部分的温度。

16. 发明授权

US06771374B1 Scatterometry based measurements of a rotating substrate 有权
标题翻译：旋转基板的基于散射法的测量
公开(公告)号：US06771374B1
公开(公告)日：2004-08-03
申请号：US10050758
申请日：2002-01-16
申请人： Bharath Rangarajan , Bhanwar Singh , Michael K. Templeton , Ramkumar Subramanian
发明人： Bharath Rangarajan , Bhanwar Singh , Michael K. Templeton , Ramkumar Subramanian
IPC分类号： G01N2155
CPC分类号： G01N21/211 , G01B11/0675 , G01N21/4738 , G01N21/9501 , Y10T428/21
摘要： A system and method are disclosed for monitoring characteristics of a rotating substrate. As the substrate rotates in an environment, an incident light beam is emitted onto the substrate near an axis about which the substrate rotates. The emission of the incident beam is controlled as a function of the angular orientation of the substrate, so that the incident beam selectively interrogates a central region of the substrate to facilitate measuring and/or inspecting characteristics of the substrate.
摘要翻译：公开了一种用于监测旋转衬底的特性的系统和方法。当衬底在环境中旋转时，入射光束在衬底旋转的轴附近被发射到衬底上。入射光束的发射被控制为衬底的角度取向的函数，使得入射光束选择性地询问衬底的中心区域以便于测量和/或检查衬底的特性。

17. 发明授权

US06562248B1 Active control of phase shift mask etching process 有权
标题翻译：主动控制相移掩模蚀刻工艺
公开(公告)号：US06562248B1
公开(公告)日：2003-05-13
申请号：US09817518
申请日：2001-03-26
申请人： Ramkumar Subramanian , Bhanwar Singh , Michael K. Templeton
发明人： Ramkumar Subramanian , Bhanwar Singh , Michael K. Templeton
IPC分类号： G01N2100
CPC分类号： G03F1/84 , G03F1/26
摘要： A system for monitoring and controlling aperture etching in a complimentary phase shift mask is provided. The system includes one or more light sources, each light source directing light to one or more apertures etched on a mask. Light reflected from the apertures is collected by a measuring system, which processes the collected light. Light passing through the apertures may similarly be collected by the measuring system, which processes the collected light. The collected light is indicative of the depth and/or width of the openings on the mask. The measuring system provides depth and/or width related data to a processor that determines the acceptability of the aperture depth and/or width. The system also includes a plurality of etching devices associated with etching apertures in the mask. The processor selectively controls the etching devices so as to regulate aperture etching.
摘要翻译：提供了一种用于在补偿相移掩模中监测和控制孔蚀刻的系统。该系统包括一个或多个光源，每个光源将光引导到在掩模上蚀刻的一个或多个孔。从孔径反射的光由测量系统收集，该系统处理所收集的光。通过孔的光可以类似地由处理收集的光的测量系统收集。收集的光指示掩模上的开口的深度和/或宽度。测量系统向确定孔径深度和/或宽度的可接受性的处理器提供深度和/或宽度相关数据。该系统还包括与掩模中的孔蚀刻相关联的多个蚀刻装置。处理器选择性地控制蚀刻装置以调节孔径蚀刻。

18. 发明授权

US06670271B1 Growing a dual damascene structure using a copper seed layer and a damascene resist structure 有权
标题翻译：使用铜籽晶层和镶嵌抗蚀剂结构生长双镶嵌结构
公开(公告)号：US06670271B1
公开(公告)日：2003-12-30
申请号：US10052146
申请日：2002-01-17
申请人： Ramkumar Subramanian , Michael K. Templeton , Bhanwar Singh , Bharath Rangarajan
发明人： Ramkumar Subramanian , Michael K. Templeton , Bhanwar Singh , Bharath Rangarajan
IPC分类号： H01L2144
CPC分类号： H01L21/76885 , H01L21/288 , H01L21/2885 , H01L21/76807 , H01L2221/1026
摘要： The present invention involves a method for fabricating interconnecting lines and vias. According to the invention, copper is grown from a seed layer to substantially fill openings in a two layer structure wherein the two layers are independently either dielectric or resist layers. According to one aspect of the invention, first and second resist layers are formed into a dual damascene structure. Copper is grown by plating from the copper seed layer to form copper features that fill the pattern gaps.
摘要翻译：本发明涉及制造互连线和通孔的方法。根据本发明，铜从种子层生长以基本上填充两层结构的开口，其中两层独立地是电介质层或抗蚀剂层。根据本发明的一个方面，第一和第二抗蚀剂层形成为双镶嵌结构。通过从铜种子层电镀生长铜以形成填充图案间隙的铜特征。

19. 发明授权

US06541184B1 Nozzle arm movement for resist development 有权
标题翻译：喷嘴臂运动用于抗蚀剂开发
公开(公告)号：US06541184B1
公开(公告)日：2003-04-01
申请号：US09655979
申请日：2000-09-06
申请人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Michael K. Templeton , Sanjay K. Yedur
发明人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Michael K. Templeton , Sanjay K. Yedur
IPC分类号： G03C556
CPC分类号： H01L21/6715 , G03F7/3028
摘要： A system and method is provided that facilitates the application of a uniform layer of developer material on a photoresist material layer. The system includes a multiple tip nozzle and a movement system that moves the nozzle to an operating position above a central region of a photoresist material layer located on a substrate, and applies a volume of developer as the nozzle scan moves across a predetermined path. The movement system moves the nozzle in two dimensions by providing an arm that has a first arm member that is pivotable about a first rotational axis and a second arm member that is pivotable about a second rotational axis or is movable along a translational axis. The system also provides a measurement system that measures the thickness uniformity of the developed photoresist material layer disposed on a test wafer. The thickness uniformity data is used to reconfigure the predetermined path of the nozzle as the developer is applied. The thickness uniformity data can also be used to adjust the volume of developer applied along the path and/or the volume flow rate.
摘要翻译：提供了一种有助于在光致抗蚀剂材料层上施加均匀的显影剂材料层的系统和方法。该系统包括多个尖端喷嘴和运动系统，该运动系统将喷嘴移动到位于基板上的光致抗蚀剂材料层的中心区域上方的操作位置，并且当喷嘴扫描移动穿过预定路径时施加一定体积的显影剂。移动系统通过提供具有第一臂构件的臂来移动喷嘴，该臂具有可围绕第一旋转轴线枢转的第一臂构件和可围绕第二旋转轴线枢转或可沿着平移轴线移动的第二臂构件。该系统还提供了测量设置在测试晶片上的显影的光致抗蚀剂材料层的厚度均匀性的测量系统。当施加显影剂时，厚度均匀性数据用于重新配置喷嘴的预定路径。厚度均匀性数据也可用于调节沿路径施加的显影剂的体积和/或体积流量。

20. 发明授权

US06513996B1 Integrated equipment to drain water-hexane developer for pattern collapse 失效
标题翻译：集成设备排出水 - 己烷显影剂，用于图案塌陷
公开(公告)号：US06513996B1
公开(公告)日：2003-02-04
申请号：US10050436
申请日：2002-01-16
申请人： Ramkumar Subramanian , Michael K. Templeton , Bhanwar Singh
发明人： Ramkumar Subramanian , Michael K. Templeton , Bhanwar Singh
IPC分类号： G03B500
CPC分类号： G03F7/3021
摘要： One aspect of the present invention relates to a method and an apparatus for rinsing a substrate during a development process to mitigate pattern collapse. The apparatus includes a bath chamber; a substrate holder disposed in the bath chamber for holding the substrate having a resist pattern formed thereon; a first nozzle for dispensing a first rinsing solution having a first density and first surface tension into the bath chamber; a second nozzle for dispensing a second rinsing solution having a second density and second surface tension, which is less than the first rinsing solution, into the bath chamber; a drain disposed in a bottom portion of the bath chamber; and a controlling system operatively coupled to the first nozzle, the second nozzle and the drain designed to regulate and coordinate the operation of the first nozzle, the second nozzle and the drain.
摘要翻译：本发明的一个方面涉及一种用于在显影过程中漂洗衬底以减轻图案崩溃的方法和装置。该装置包括浴室; 设置在所述浴室中用于保持形成有抗蚀剂图案的所述基板的基板保持架; 用于将具有第一密度和第一表面张力的第一冲洗溶液分配到所述浴室中的第一喷嘴; 第二喷嘴，用于将具有小于第一冲洗溶液的第二密度和第二表面张力的第二冲洗溶液分配到浴室中; 排水口，其设置在所述浴室的底部; 以及可操作地联接到第一喷嘴，第二喷嘴和排水口的设计用于调节和协调第一喷嘴，第二喷嘴和排水管的操作的控制系统。

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